JP4912586B2 - 薄膜集積回路装置の作製方法 - Google Patents

薄膜集積回路装置の作製方法 Download PDF

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Publication number
JP4912586B2
JP4912586B2 JP2004352242A JP2004352242A JP4912586B2 JP 4912586 B2 JP4912586 B2 JP 4912586B2 JP 2004352242 A JP2004352242 A JP 2004352242A JP 2004352242 A JP2004352242 A JP 2004352242A JP 4912586 B2 JP4912586 B2 JP 4912586B2
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Japan
Prior art keywords
thin film
integrated circuit
film integrated
circuit device
substrate
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Expired - Fee Related
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JP2004352242A
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Japanese (ja)
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JP2005203751A (ja
JP2005203751A5 (enExample
Inventor
舜平 山崎
徹 高山
洋平 神野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004352242A priority Critical patent/JP4912586B2/ja
Publication of JP2005203751A publication Critical patent/JP2005203751A/ja
Publication of JP2005203751A5 publication Critical patent/JP2005203751A5/ja
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Publication of JP4912586B2 publication Critical patent/JP4912586B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]

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  • Credit Cards Or The Like (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2004352242A 2003-12-19 2004-12-06 薄膜集積回路装置の作製方法 Expired - Fee Related JP4912586B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004352242A JP4912586B2 (ja) 2003-12-19 2004-12-06 薄膜集積回路装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003423888 2003-12-19
JP2003423888 2003-12-19
JP2004352242A JP4912586B2 (ja) 2003-12-19 2004-12-06 薄膜集積回路装置の作製方法

Publications (3)

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JP2005203751A JP2005203751A (ja) 2005-07-28
JP2005203751A5 JP2005203751A5 (enExample) 2008-01-24
JP4912586B2 true JP4912586B2 (ja) 2012-04-11

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JP2004352242A Expired - Fee Related JP4912586B2 (ja) 2003-12-19 2004-12-06 薄膜集積回路装置の作製方法

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JP (1) JP4912586B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007128433A (ja) * 2005-11-07 2007-05-24 Philtech Inc Ｒｆパウダーとその製造方法
ATE519223T1 (de) * 2005-11-11 2011-08-15 Koninkl Philips Electronics Nv Verfahren zur herstellung mehrerer halbleiteranordnungen und trägersubstrat
JP2008109116A (ja) * 2006-09-26 2008-05-08 Dainippon Printing Co Ltd 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
JP2008113632A (ja) * 2006-11-07 2008-05-22 Hitachi Ltd 生体植込用ｒｆｉｄタグおよびその挿入冶具体
US8154456B2 (en) 2008-05-22 2012-04-10 Philtech Inc. RF powder-containing base
US8188924B2 (en) 2008-05-22 2012-05-29 Philtech Inc. RF powder and method for manufacturing the same
US9490179B2 (en) 2010-05-21 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device
US11050144B1 (en) * 2020-05-08 2021-06-29 W. L. Gore & Associates, Inc. Assembly with at least one antenna and a thermal insulation component
JP2025125771A (ja) * 2024-02-16 2025-08-28 浜松ホトニクス株式会社 接合体の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000020665A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 半導体装置
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
EP1455394B1 (en) * 2001-07-24 2018-04-11 Samsung Electronics Co., Ltd. Transfer method

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JP2005203751A (ja) 2005-07-28

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