JP4904737B2 - Ic一体型薄膜振動片の製造方法。 - Google Patents
Ic一体型薄膜振動片の製造方法。 Download PDFInfo
- Publication number
- JP4904737B2 JP4904737B2 JP2005216876A JP2005216876A JP4904737B2 JP 4904737 B2 JP4904737 B2 JP 4904737B2 JP 2005216876 A JP2005216876 A JP 2005216876A JP 2005216876 A JP2005216876 A JP 2005216876A JP 4904737 B2 JP4904737 B2 JP 4904737B2
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- Prior art keywords
- thin film
- electrode
- zno
- sio
- piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 278
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 25
- 238000010897 surface acoustic wave method Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 40
- 230000005284 excitation Effects 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 128
- 239000011787 zinc oxide Substances 0.000 description 62
- 229910004298 SiO 2 Inorganic materials 0.000 description 51
- 239000010410 layer Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000005336 cracking Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 244000126211 Hericium coralloides Species 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005216876A JP4904737B2 (ja) | 2005-07-27 | 2005-07-27 | Ic一体型薄膜振動片の製造方法。 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005216876A JP4904737B2 (ja) | 2005-07-27 | 2005-07-27 | Ic一体型薄膜振動片の製造方法。 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007036656A JP2007036656A (ja) | 2007-02-08 |
JP2007036656A5 JP2007036656A5 (enrdf_load_stackoverflow) | 2008-08-21 |
JP4904737B2 true JP4904737B2 (ja) | 2012-03-28 |
Family
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Family Applications (1)
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JP2005216876A Expired - Fee Related JP4904737B2 (ja) | 2005-07-27 | 2005-07-27 | Ic一体型薄膜振動片の製造方法。 |
Country Status (1)
Country | Link |
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JP (1) | JP4904737B2 (enrdf_load_stackoverflow) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105794107B (zh) | 2013-12-27 | 2018-12-25 | 株式会社村田制作所 | 弹性波装置以及其制造方法 |
DE112016002835B4 (de) * | 2015-06-25 | 2023-02-02 | Murata Manufacturing Co., Ltd. | Vorrichtung für elastische Wellen |
DE112016002901B4 (de) | 2015-06-25 | 2021-09-23 | Murata Manufacturing Co., Ltd. | Vorrichtung für elastische Wellen |
JP6432558B2 (ja) * | 2015-06-25 | 2018-12-05 | 株式会社村田製作所 | 弾性波装置 |
JP6468357B2 (ja) * | 2015-06-25 | 2019-02-13 | 株式会社村田製作所 | 弾性波装置 |
CN106841383B (zh) * | 2016-12-27 | 2019-06-18 | 华中科技大学 | 一种集成式阻抗负载声表面波气体传感器 |
CN111066244B (zh) | 2017-08-29 | 2023-03-24 | 株式会社村田制作所 | 弹性波装置、高频前端电路以及通信装置 |
JP7364196B2 (ja) * | 2021-09-24 | 2023-10-18 | 三安ジャパンテクノロジー株式会社 | 弾性波デバイス、モジュール |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2836375B2 (ja) * | 1992-04-28 | 1998-12-14 | 日本電気株式会社 | 半導体弾性表面波複合装置 |
US5838089A (en) * | 1997-02-18 | 1998-11-17 | Kobe Steel Usa Inc. | Acoustic wave devices on diamond with an interlayer |
KR100316383B1 (ko) * | 1998-10-30 | 2002-02-19 | 윤덕용 | 모노리딕직접회로위에박막또는후막단결정압전소자를집적한단일칩라디오구조및그제조방법 |
JP4385607B2 (ja) * | 2003-01-29 | 2009-12-16 | セイコーエプソン株式会社 | 表面弾性波素子、周波数フィルタ、発振器、電子回路並びに電子機器 |
JP2004297359A (ja) * | 2003-03-26 | 2004-10-21 | Seiko Epson Corp | 表面弾性波素子、周波数フィルタ、発振器、電子回路、及び電子機器 |
JP2004312309A (ja) * | 2003-04-04 | 2004-11-04 | Seiko Epson Corp | 半導体振動子複合装置、電子デバイスおよび電子機器 |
JP4428064B2 (ja) * | 2004-01-21 | 2010-03-10 | セイコーエプソン株式会社 | 薄膜弾性表面波デバイス |
-
2005
- 2005-07-27 JP JP2005216876A patent/JP4904737B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2007036656A (ja) | 2007-02-08 |
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