JP4893490B2 - Device evaluation apparatus and device evaluation method - Google Patents

Description

  The present invention relates to a device evaluation apparatus and a device evaluation method, and more specifically to a device evaluation apparatus and a device evaluation method that can evaluate a device in a higher temperature region than in the past.

Conventionally, a power device for high withstand voltage and high power is known as one of the uses of a semiconductor device. Currently, devices using silicon (Si) are mainly used as such power devices, but devices using wide band gap semiconductors such as SiC (silicon carbide) have also been proposed as higher performance devices. (For example, refer nonpatent literature 1). Since such a power device has a relatively high temperature during use, a durability test (thermal cycle test) against a stress caused by a difference in thermal expansion coefficient between mounting materials of the device is performed.
Hisashi Kawai, “Expectations for SiC devices from the perspective of automotive electronics”, FED Review, New Functional Device Research and Development Association, Vol. 1 2002

  The above-described thermal cycle test is defined in JIS C7021. However, the thermal cycle test currently being conducted is premised on a device using Si, and is intended to guarantee the guaranteed operating temperature range (-40 to 150 ° C.) of the device using Si. .

  On the other hand, when the above-described device using SiC is used as a power device, an operation in a higher temperature range (for example, a temperature range of 200 ° C. or higher) is assumed. However, since the conventional evaluation apparatus and evaluation method for performing a thermal cycle test do not assume such a test in a high temperature range, a device (for example, using SiC) that is used in a higher temperature range than a device using Si is used. It was difficult to sufficiently conduct a thermal cycle test for verifying the durability of the device.

  The present invention has been made in order to solve the above-described problems, and an object of the present invention is to provide a device evaluation apparatus and device evaluation capable of verifying the durability of a device used in a higher temperature range than before. Is to provide a method.

The device evaluation apparatus according to the present invention includes a holding member, a cooling member, a heating member, a moving member, and a control unit. The holding member holds a measurement object including a semiconductor device to which power is supplied. The cooling member is in contact with the holding member so as to be detachable, and is for removing heat from the measurement object via the holding member. A heating member is arrange | positioned inside the groove | channel formed in the holding member, and heats a to-be-measured body. The moving member moves so that the holding member is attached to and detached from the cooling member. The control unit controls the cooling member, the heating member, and the moving member. The cooling member includes a surface portion detachably contacting the holding member, a base member connected to the surface portion via an electronic cooling element, and a refrigerant for removing heat from the base member. The control unit can control the power supplied to the electronic cooling element. The device evaluation apparatus further includes a refrigerant temperature sensor for measuring the temperature of the refrigerant.

  In this way, the holding member can be separated from the cooling member by the moving member. For this reason, when the object to be measured is heated by the heating member, the holding member that holds the object to be measured can be moved away from the cooling member by the moving member, so that heat is transmitted from the object to be measured to the cooling member to be measured. Generation | occurrence | production of the problem that the temperature increase rate of a body becomes slow or temperature increase of a to-be-measured body cannot fully be suppressed can be suppressed. Further, when cooling the measured object, the holding member that holds the measured object by the moving member can be brought into contact with the cooling member. Therefore, since heat can be reliably transmitted from the measured object to the cooling member via the holding member, the measured object can be quickly and reliably cooled.

  Further, when the measured object is heated, the measured object and the cooling member are not thermally connected, so that the cooling member is excessively heated due to the temperature rise of the measured object. Can be prevented. For this reason, for example, it is possible to suppress the occurrence of a problem that a component (for example, an electronic cooling element) used for the cooling member breaks down due to excessive heating or the life is shortened. Furthermore, since the influence by the excessive heating with respect to a cooling member can be suppressed, the heating temperature of a to-be-measured body can be set to a sufficiently high temperature range. Therefore, even when the semiconductor device of the device under test operates at a higher temperature range than a device using conventional silicon such as a device using SiC, the operating temperature range of the device under test (higher temperature range than before) The test in can be easily performed.

  Here, the semiconductor device means a device using a semiconductor such as silicon (Si) or silicon carbide (SiC) as a substrate. In addition, the object to be measured is a single semiconductor device, a semiconductor package in which the semiconductor device is incorporated, or a combination of a plurality of components to realize a predetermined function using the semiconductor device as a part of the component. It may be a module configured as described above.

  In addition, the thermoelectric cooling element is an element that can make a difference in temperature on different surfaces (both sides) of the element by applying power, or one of the different surfaces of the element that absorbs heat, and the other surface. It means an element that generates heat and can act as a heat pump as a result, and specifically includes a Peltier element.

  A device evaluation method according to the present invention is a device evaluation method using the device evaluation apparatus, and includes a step of holding a measured object by a holding member and a test step. In the test process, by driving the moving member and supplying the electric power to the heating member in a state where the holding member is isolated from the cooling member, the heating process for increasing the temperature of the measured object, and by driving the moving member With the holding member in contact with the cooling member, the cooling member, the heating member, and the movement so as to repeat the cooling process of cooling the measured object one or more times by transferring the heat of the measured object to the cooling member. The member is controlled by the control unit.

  In this way, the object to be measured is prevented from being heated excessively by heating the object to be measured by the heating member in a state where the object to be measured is not thermally connected from the cooling member. When the object to be measured is cooled, the heat of the object to be measured is transferred to the cooling member by thermally connecting the object to be measured and the cooling member via the holding member. By transmitting, the thermal cycle test for the object to be measured can be easily performed.

  As described above, according to the present invention, in the thermal cycle test of the measured object, heating and cooling of the measured object can be performed quickly and reliably while suppressing the influence of heating of the measured object on the cooling member. Therefore, even if the semiconductor device of the device under test operates at a higher temperature range than the device using conventional silicon, such as a device using SiC, the test in the operating temperature range of the device under test is easy. Can be implemented.

  Hereinafter, embodiments and examples of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
FIG. 1 is a schematic diagram of Embodiment 1 of an evaluation apparatus according to the present invention. FIG. 2 is a schematic plan view of a heat generating portion base plate on which a measurement target in the evaluation apparatus shown in FIG. 1 is mounted. 3 is a schematic cross-sectional view taken along line III-III in FIG. A first embodiment of an evaluation apparatus according to the present invention will be described with reference to FIGS.

  As shown in FIG. 1, an evaluation apparatus 30 as a device evaluation apparatus according to the present invention includes a heat generating part base plate 45 on which a device under test 1 including a semiconductor device is mounted, and a direction indicated by an arrow 47 in the heat generating part base plate 45 ( The moving member 40 moved in the vertical direction), the base plate 5 with which the heat generating portion base plate 45 can come into contact with the upper surface thereof, and the electrons arranged so as to come into contact with the back surface of the base plate 5 opposite to the upper surface. Peltier element 9 as a cooling element, radiator 11 as a base member thermally connected to Peltier element 9, power to be measured 1, moving member 40, heating part base plate 45, and electric power input to Peltier element 9 And a control device 29 as a control unit for controlling the control. More specifically, the DUT 1 is connected to the surface of the heat generating portion base plate 45 via the grease 3. A plurality of arm portions 39 are formed at the end of the heat generating portion base plate 45. The arm portion 39 is formed to extend upward (in a direction away from the base plate 5) from the end portion of the heat generating portion base plate 45. The arm portion 39 has a columnar shape, and a solenoid coil 41 constituting the moving member 40 is disposed so as to be wound around the arm portion 39. The arm portion 39 is made of a magnetic material (for example, a metal such as iron). By energizing the solenoid coil 41, the arm portion 39 receives a stress in a direction away from the base plate 5. As a result, the arm portion 39 and the heat generating portion base plate 45 can be detached from the base plate 5. Note that, by stopping the supply of power to the solenoid coil 41, the heat generating portion base plate 45 is pressed toward the base plate 5 side by its own weight.

  A heater groove 74 is formed on the upper surface of the heat generating portion base plate 45 as shown in FIGS. The planar shape of the heater groove 74 is annular. A heater 71 composed of a metal resistor 76 and an insulator 75 is disposed inside the heater groove 74. As the metal resistor 76, for example, a nichrome wire can be used. As the insulator 75, ceramics such as high thermal conductivity insulating ceramics, for example, AlN, SiN, or the like can be used. The metal resistor 76 is located substantially at the center of the heater groove 74, and its planar shape is annular. The insulator 75 is disposed so as to surround the metal resistor 76.

  Further, a thermocouple groove 73 is formed on the upper surface of the heat generating portion base plate 45. The thermocouple groove 73 is formed so as to extend from the end portion of the heat generating portion base plate 45 to the central portion. The thermocouple groove 73 extends from the end portion to the central portion of the upper surface of the heat generating portion base plate 45 (or the central portion of the region surrounded by the heater groove 74). A thermocouple 7 a is disposed inside the heater groove 74. In the central part of the heat generating part base plate 45, the DUT 1 is arranged on the heater groove 74 via the grease 3. The thermocouple 7a is for measuring the temperature of the object 1 to be measured. The DUT 1 is connected and fixed to the heat generating part base plate 45 by a fixing part 72. By forming the heater groove 74 outside the measured object 1 in this way, the degree to which heat conduction from the measured object 1 to the heat generating portion base plate 45 is hindered by the heater groove 74 or the heater 71 can be reduced.

  The base plate 5 is disposed at a position facing the lower surface of the heat generating portion base plate 45. A covering material 38 is disposed on the upper surface of the base plate 5 (surface facing the heat generating portion base plate 45). The covering material 38 preferably acts as a cushioning material for absorbing an impact when the heat generating portion base plate 45 is attached to and detached from the upper surface of the base plate 5. For example, a resin having a relatively high thermal conductivity can be used as the covering material 38. The heat generating portion base plate 45 is connected to the base plate 5 through the covering material 38.

  The size of the planar shape of the heat generating part base plate 45 is larger than the size of the planar shape of the DUT 1. Further, the size of the planar shape of the base plate 5 is larger than the size of the planar shape of the heat generating portion base plate 45. Moreover, as a material which comprises the heat-emitting part base plate 45 and the base plate 5, what kind of material may be used if it is a material which can perform heat transfer efficiently. For example, the heat generating portion base plate 45 and the base plate 5 may be made of metal such as aluminum, copper, or an alloy containing these.

  Further, a groove is formed in the lower surface of the base plate 5, and a thermocouple 7b is disposed inside the groove. The thermocouple 7 b is for measuring the temperature of the Peltier element 9 disposed under the base plate 5.

  As a method for measuring the temperature of the device under test 1, a method using a non-contact type thermometer (for example, an infrared thermometer) instead of the thermocouple 7 a, or a Vf of a diode included in the device under test 1 ( A method of measuring a forward voltage) may be used. In this case, for example, if it is a non-contact thermometer, it can be arranged at an arbitrary position facing the measured object 1. Further, as a method for measuring the loss degree of the Peltier element 9, a method using a non-contact type thermometer instead of the thermocouple 7b may be used.

  The lower surface of the base plate 5 is connected to the upper surface of the Peltier element 9 via grease (not shown). The lower surface of the Peltier element 9 is connected to the radiator 11 through the grease 3.

  The heat radiator 11 has a flat upper surface, and a plurality of heat radiating fins serving as heat radiating portions as shown in FIG. As a material constituting the radiator 11, any material may be used as long as the material can efficiently perform heat transfer. For example, the radiator 11 may be made of metal such as aluminum, copper, or an alloy containing these elements. In addition, a refrigerant flow path 13 is connected to the radiator 11 in order to supply a refrigerant 17 for contacting the radiating fin and removing heat from the radiator 11. The refrigerant flow path 13 constitutes a circulation path that connects the other end of the radiator 11 from one end of the radiator 11 via the pump 14 and the heat exchanger 15.

  By driving the pump 14, the refrigerant 17 flows from one end of the radiator 11 so as to contact the radiating fins of the radiator 11, for example. When the refrigerant 17 comes into contact with the radiating fin, the refrigerant 17 takes heat from the radiator 11. Then, after the refrigerant 17 reaches the other end of the radiator 11, the refrigerant 17 flows from the other end of the radiator 11 through the refrigerant flow path 13 and reaches the heat exchanger 15. In the heat exchanger 15, the refrigerant 17 is cooled as a result of heat exchange between the refrigerant 17 and another medium (for example, outside air). After the refrigerant 17 that has passed through the heat exchanger 15 reaches the pump 14, it is supplied again to one end of the radiator 11 by driving the pump 14. As shown in FIG. 1, a temperature sensor 16 for measuring the temperature of the refrigerant 17 is disposed in a portion of the refrigerant flow path 13 located on the downstream side of the radiator 11.

  A sealed case 28 is arranged so as to hold the device under test 1, the moving member 40, the heat generating part base plate 45, the base plate 5, the Peltier element 9, and the radiator 11. The hermetic case 28 is configured so that its inside can be isolated from the outside. As the material constituting the sealed case 28, any material may be used as long as the inside can be isolated from the outside and the material is resistant to the atmospheric gas disposed inside.

  Although not shown, an exhaust pump as a pressure adjusting member for adjusting the internal pressure may be connected to the sealed case 28 via a pipe. The sealed case 28 is used as an atmosphere gas supply member for supplying a predetermined atmosphere gas (for example, an inert gas such as argon gas or nitrogen gas, or dry air for preventing condensation) to the inside of the sealed case 28. A flow meter, a mass flow controller, etc. may be connected via piping. A flow meter, a mass flow controller, or the like may be connected to a supply source of the atmospheric gas (for example, a tank that accumulates the atmospheric gas) via another pipe.

  The evaluation device 30 is a control for controlling the power supplied to the Peltier element 9, the device under test 1, the heater 71 (see FIG. 2) of the heat generating part base plate 45, the pump 14, the heat exchanger 15, and the like. A device 29 is provided. The control device 29 includes an elevating drive power supply 35, a measured object power supply 21, a heater drive power supply 22, a Peltier element power supply 23, a cooling system power supply 24, and a controller 26 for controlling these power supplies. The control device 29 may be configured by a dedicated control board equipped with a microcomputer that operates as the controller 26, various power sources, various switches, and the like. You may comprise by the apparatus connected and mounted with various power supplies, various switches, etc.

  The power supply 21 for the measured object and the power supply 22 for driving the heater are connected to the measured object 1 and the heater 71 (see FIG. 2) via the current sensor 25 through connection lines, respectively. Further, the lifting drive power supply 35 is connected to the plurality of moving members 40 via the current sensors 25 via connection lines. The Peltier element power source 23 is connected to the Peltier element 9 via a current sensor 25 via a connection line. The cooling system power supply 24 is connected to each of the pump 14 and the heat exchanger 15 via a current sensor 25. If the heat exchanger 15 is configured not to be driven by electric current, the cooling system power supply 24 may be connected only to the pump 14. Further, the above-described power source 21 to be measured, the heater driving power source 22, the lift driving power source 35, the Peltier element power source 23, and the cooling system power source 24 are respectively for performing PWM control and voltage control, which will be described later. A drive circuit is included.

  Here, PWM control (Pulse Width Modulation control) means pulse width modulation control. Here, for example, the power to be input to the device under test 1 and the heater 71 is turned on and off repeatedly to form a pulse wave. The electric power input to the measured object and the heater 71 is controlled by changing the ratio (pulse width) of the wave ON and OFF. Here, the voltage control means, for example, control for changing the voltage value of the current input to the device under test 1 and the heater 71 with time.

  Each of the above-described power supply 21 to be measured, heater drive power supply 22, lift drive power supply 35, Peltier element power supply 23, and cooling system power supply 24 is connected to the controller 26, and is controlled by the controller 26. Is done. The controller 26 is connected to a temperature sensor 16 that measures the temperature of the refrigerant 17, a thermocouple 7 a that measures the temperature of the DUT 1, and a thermocouple 7 b that measures the temperature of the Peltier element 9. The controller 26 receives temperature measurement data from the temperature sensor 16 and the thermocouples 7a and 7b. Further, the controller 26 can detect disconnection of the thermocouples 7a and 7b based on data input from the thermocouples 7a and 7b. A sensor for detecting the disconnection of the thermocouples 7a and 7b as described above may be disposed in the middle of the connection line connecting the thermocouples 7a and 7b itself or the thermocouples 7a and 7b and the controller 26. The controller 26 uses these measurement data to control the evaluation device 30.

  Next, the operation of the evaluation apparatus 30 will be described by taking as an example a device evaluation method (thermal cycle test) of the device under test 1 using the evaluation apparatus 30 shown in FIG. FIG. 4 is a flowchart showing a device evaluation method using the evaluation apparatus shown in FIG. FIG. 5 is a flowchart showing the contents of the test process in the flowchart shown in FIG. A device evaluation method using the evaluation apparatus shown in FIG. 1 will be described with reference to FIGS.

  As shown in FIG. 4, the device evaluation method using the evaluation apparatus 30 shown in FIG. 1 includes a measured object preparation step (S100), a test step (S200), and a post-processing step (S300). In the measurement object preparation step (S100), the measurement object 1 such as a module including a semiconductor device is disposed via a grease 3 at a predetermined position on the heat generating portion base plate 45 shown in FIG. Further, by sealing the sealed case 28, the outside of the sealed case 28 and the inside of the sealed case 28 in which the measured object 1 is arranged are isolated, and the composition and pressure of the atmospheric gas inside the sealed case 28 are set. Adjust to predetermined conditions.

  Next, a test process (S200) is performed. Specific contents of this test step (S200) will be described later. And after a test process (S200) is complete | finished, a post-processing process (S300) is implemented. Specifically, the device under test 1 for which the test has been completed is taken out from the base plate 5.

  Next, specific contents of the test step (S200) will be described with reference to FIG. As shown in FIG. 5, in the test step (S200) (see FIG. 4), first, the temperature of the device under test 1 is raised to a predetermined temperature and then maintained at that temperature (maintenance temperature on the high temperature side) for a predetermined time. A temperature raising step (S210) is performed. Specifically, in the temperature raising step (S210), the heating unit base plate 45 is kept away from the base plate 5 by supplying electric power from the lifting drive power source 35 to the solenoid coil 41 of the moving member 40. In addition, by supplying electric power from the power source 21 for the measured object 21 and the power source 22 for driving the heater (see FIG. 1) to the measured object 1 and the heater 71 (see FIG. 2), respectively, The temperature of the measurement object 1 is increased by the heat generated from the heater 71. At the same time, the supply of power from the Peltier element power supply 23 is stopped for the Peltier element 9. As a result, the amount of heat generated from the device under test 1 and the heater 71 is larger than the amount of heat removed directly from the device under test 1 via the heat generating part base plate 45 or directly. For this reason, the temperature of the DUT 1 can be increased. When the temperature of the device under test 1 is kept constant at the high temperature side maintenance temperature, the power output from the device under test power supply 21 and the heater drive power supply 22 is controlled as will be described later. It becomes possible to keep the temperature of the measuring body 1 constant at the maintenance temperature.

  Next, a cooling step (S220) is performed. In the cooling step (S220), the temperature of the measurement object 1 maintained for a certain period of time at the above-described high temperature side maintenance temperature is lowered and maintained at a predetermined temperature (low temperature side maintenance temperature) for a predetermined time. Specifically, as will be described later, the heating unit base plate 45 is brought into contact with the base plate 5 by stopping the supply of power from the lifting drive power source 35 to the solenoid coil 41 of the moving member 40. Here, when the solenoid coil 41 is disconnected (when the heat generating part base plate 45 is separated from the base plate 5), a current is passed in the opposite direction (the reverse voltage is applied), whereby the heat generating part base plate 45 is attached to the base plate 5. You may make it press. In this way, the thermal connection between the heat generating portion base plate 45 and the base plate 5 can be improved (the thermal resistance of the connecting portion can be reduced). In addition, the output of power from the power supply 21 for the measured object and the power supply 22 for driving the heater is stopped, while the power output from the power supply 23 for the Peltier element is controlled, so that the temperature of the measured object 1 is reduced to the low temperature side. It can be maintained at the maintenance temperature.

  Next, a step (S230) of determining whether the temperature raising and cooling have been repeated a predetermined number of times is performed. In this step (S230), it is determined whether or not the temperature raising step (S210) and the cooling step (S220) described above have been repeated a predetermined number of times, and when it is determined that the predetermined number of times has not been repeated (when NO is determined). The temperature raising step (S210) and the cooling step (S220) are performed again. When it is determined that the above process has been repeated a predetermined number of times in the step (S230) (when YES is determined), the power supply 21 to be measured, the heater drive power supply 22, the Peltier element power supply 23, and the like A step (S240) for performing post-processing such as turning OFF is performed. In this way, the test process (S200) can be performed.

  In the temperature raising step (S210) and the cooling step (S220) described above, the temperature of the device under test 1, more specifically, the semiconductor junction temperature Tj of the semiconductor device included in the device under test 1 is set to the high temperature side or the low temperature side. In order to maintain at the maintenance temperature, for example, PWM control or voltage control can be applied to the outputs of the power supply 21 to be measured, the heater drive power supply 22 and the Peltier element power supply 23. Hereinafter, a case where PWM control or voltage control is applied in the test process (S200) will be described.

  Since the evaluation apparatus 30 shown in FIG. 1 performs a high-temperature thermal cycle test as will be described later, in the state where the semiconductor junction temperature Tj is the high-temperature side maintenance temperature Tjmax, the evaluation device 30 moves from the lifting drive power supply 35. Cooling capacity (radiation heat transfer, natural convection heat transfer, conduction heat transfer) as a system of the evaluation device 30 when power is supplied to the solenoid coil 41 of the member 40 and the power source of the Peltier element 9 is OFF. The evaluation device 30 is designed so that the total calorific value (Qgen) of the DUT 1 and the heater 71 is larger than the amount of heat dissipated from the evaluation device 30 in the above state determined by the above. Further, in order to realize a quick response in time in the high-temperature thermal cycle test, it is effective to increase the calorific value (Qgen) of the measured object 1. Note that increasing the total calorific value (Qgen) of the measured object 1 and the heater 71 in this way is supplied to the power supply voltage from the measured object power supply 21 supplied to the measured object 1 and the heater 71. This can be easily realized by increasing the power supply voltage from the heater driving power supply 22.

  It is also preferable to increase the amount of heat (Qr) removed from the DUT 1 via the heat generating part base plate 45, the base plate 5, the Peltier element 9, and the radiator 11. In particular, considering the thermal circuit of the evaluation device 30, the maintenance temperature Tjmin on the low temperature side of the semiconductor junction temperature Tj is greatly influenced by the temperature of the refrigerant 17, and the temperature of the refrigerant 17 is approximately the same as the maintenance temperature Tjmin on the low temperature side. It is preferable to set to.

(Case 1)
In order to control the amount of heat generated (Qgen) from the measured object 1 and the heater 71, PWM control is applied to the measured power supply 21 and the heater driving power supply 22, and the Peltier element power supply 23 is PWM controlled. This is a case where the amount of heat (Qr) removed from the DUT 1 is controlled through the heat generating part base plate 45, the base plate 5, the Peltier element 9, and the radiator 11 by applying the control. A specific control flow is shown in FIG. 6, and a timing chart showing ON / OFF of the power supply and transition of temperature conditions is shown in FIG. FIG. 6 is a flowchart showing a test process in an example of a device evaluation method according to the present invention. FIG. 7 is a timing chart showing the transition of power ON / OFF and temperature conditions in the test process according to the flowchart shown in FIG. In FIG. 7, the horizontal axis indicates time, and the vertical axis indicates five characteristic values. That is, the vertical axis in FIG. 7 shows the change in the semiconductor junction temperature Tj in the semiconductor device from the top, the change in the temperature of the measured object 1 (monitor temperature Tmon) measured by the thermocouple 7a in FIG. 23 (Peltier drive power supply) ON / OFF, DUT power supply 21 and heater drive power supply 22 (semiconductor and heater drive power supply) ON / OFF, and lift drive power supply 35 ON / OFF (moving member 40 The separation (cutting) / contact (connection) between the heat generating portion base plate 45 and the base plate 5 by the lift control that is drive control is shown. With reference to FIG. 6 and FIG. 7, the test process in an example (case 1) of the device evaluation method by this invention is demonstrated.

  Referring to FIGS. 6 and 7, in the test process, first, as part of the temperature raising process (S210) (see FIG. 5), the semiconductor and heater drive power is turned on, the Peltier drive power is turned off, and the heating part base plate is turned on. A step (S211) of cutting (separation of the heat generating portion base plate 45 and the base plate 5) is performed. This step (S211) is performed at time T1 in the timing chart of FIG. From this time T1, the monitor temperature Tmon and the semiconductor junction temperature Tj start to rise as shown in FIG. Further, when the current is supplied from the lifting drive power supply 35 to the solenoid coil 41 of the moving member 40, the heat generating portion base plate 45 is separated from the base plate 5. During the test process (S200), the power to be measured 1 and the heater 71 are supplied from the power supply 21 to be measured and the heater drive power supply 22 (see FIG. 1) to the temperature to be measured 1 and the heater 71.

  Then, in step (S212) of FIG. 6, it is determined whether or not the semiconductor junction temperature Tj has reached Tjmax, which is the high temperature side maintenance temperature. In this step (S212), NO is determined from the time point T1 to the time point T2 in FIG. 7, so the step (S212) is repeated until the time point T2 in FIG.

  At time T2 in FIG. 7, the semiconductor junction temperature Tj reaches Tjmax, which is the high temperature side maintenance temperature, and the monitor temperature Tmon reaches Tmax, which is the high temperature side maintenance temperature. The semiconductor junction temperature Tj is obtained from the monitor temperature Tmon by calculation. As can be seen from FIG. 7, the maintenance temperature Tmax on the high temperature side of the monitor temperature Tmon is lower than the maintenance temperature Tjmax on the high temperature side of the semiconductor junction temperature Tj. This is because the semiconductor device arranged inside the measured object 1 acts as a heating element, and from the relationship between the heater 71 and the amount of heat generated in the semiconductor device, the semiconductor measured at the semiconductor junction temperature Tj in the semiconductor device. This is because the monitor temperature Tmon that is the temperature measured outside the body 1 is lower. Note that, by changing the setting of the amount of heat generated between the heater 71 and the semiconductor device, the monitor temperature Tmon, which is the measurement temperature outside the device under test 1, is higher than the semiconductor junction temperature Tj in the semiconductor device. It may be.

  As described above, when the semiconductor junction temperature Tj reaches Tjmax at time T2, YES is determined in step (S212), and the next step (S213) is performed. In the step (S213), the PWM control of the semiconductor and the heater driving power source is disclosed. Specifically, as shown in FIG. 7, ON / OFF of the semiconductor drive power supply is repeated at a predetermined interval, whereby the output of the semiconductor drive power supply has a pulse waveform. Then, by appropriately controlling the width and interval of the pulse wave (ON time and OFF time), the total heat generation amount Qgen of the heat generation amount from the semiconductor device and the heat generation amount from the heater 71 in the measurement object 1 is obtained. It is suppressed. As a result, the total calorific value Qgen from the device under test 1 and the heater 71 is equal to the heat amount Qr removed from the device under test 1 to the heat generating part base plate 45 or directly from the device under test 1 to the outside of the apparatus. Therefore, as shown in FIG. 7, the monitor temperature Tmon and the semiconductor junction temperature Tj can be maintained at the high temperature side maintenance temperatures Tmax and Tjmax, respectively.

  Then, the state in which the monitor temperature Tmon and the semiconductor junction temperature Tj as described above are maintained constant starts at a time T2 in FIG. 7 and continues for a predetermined time. At this time, in the control flow shown in FIG. 5, whether a predetermined time has elapsed since the semiconductor junction temperature Tj became Tjmax in the step (S214) (whether the time from time T2 to time T3 has elapsed). To be judged. Until time T3 in FIG. 7 is NO in step (S214), step (S214) is repeated until time T3. For this reason, the PWM control of the semiconductor and the heater drive power supply is continued until time T3, whereby the monitor temperature Tmon and the semiconductor junction temperature Tj are maintained at the high temperature side maintenance temperatures Tmax and Tjmax, respectively.

  When time T3 is reached, YES is determined in step (S214), and therefore the cooling step (S220) in FIG. 5 is started. Specifically, at time T3 in FIG. 7, the process of turning off the semiconductor and heater drive power, turning on the Peltier drive power, and connecting the heat generating part base plate (contacting the heat generating part base plate 45 and the base plate 5) (S221) is performed. As a result, as shown in FIG. 7, when the power supplied to the solenoid coil 41 from the lifting drive power supply 35 is turned off at time T3, the heat generating portion base plate 45 comes into contact with the base plate 5, and monitoring is started from time T3. The temperature Tmon and the semiconductor junction temperature Tj begin to decrease.

  Thereafter, in the flowchart shown in FIG. 6, it is determined in step (S222) whether or not the semiconductor junction temperature Tj has become the low-temperature maintenance temperature Tjmin. Then, as shown in FIG. 7, it is determined as NO in the above step (S222) until the time T4 when the semiconductor junction temperature Tj becomes the low temperature side maintenance temperature Tjmin (that is, the monitor temperature Tmon becomes the low temperature side maintenance temperature Tmin). The Therefore, the process (S222) is repeated until the time point T4 is reached.

  Then, at time T4 shown in FIG. 7, when the semiconductor junction temperature Tj reaches the low temperature side maintenance temperature Tjmin, YES is determined in the step (S222). As a result, a step (S223) of starting PWM control of the Peltier drive power supply is performed. When this step (S223) is performed, as shown in FIG. 7, the Peltier drive power supply repeats ON / OFF at predetermined intervals. Specifically, as shown in FIG. 7, ON / OFF of the Peltier drive power supply is repeated at a predetermined interval, whereby the output of the Peltier drive power supply has a pulse waveform. The amount of heat Qr transmitted from the base plate 5 side to the radiator 11 side in the Peltier element 9 is controlled by appropriately controlling the width and interval (ON time and OFF time) of the pulse wave. As a result, the amount of heat supplied from the atmosphere at a high ambient temperature via the measured object 1 or the heat generating portion base plate 45 and the like is transmitted to the radiator 11 via the base plate 5 and the Peltier element 9 and is removed by the refrigerant 17. The amount of heat Qr becomes equal. Therefore, as shown in FIG. 7, the monitor temperature Tmon and the semiconductor junction temperature Tj can be maintained at the low temperature side maintenance temperatures Tmin and Tjmin, respectively.

  Then, the state in which the monitor temperature Tmon and the semiconductor junction temperature Tj as described above are maintained constant starts at time T4 in FIG. 7 and continues for a predetermined time. At this time, in the control flow shown in FIG. 6, whether a predetermined time has elapsed since the semiconductor junction temperature Tj became Tjmin in the step (S224) (whether the time from time T4 to time T5 has elapsed). To be judged. Until the time T5 in FIG. 7 is NO in the step (S224), the step (S224) is repeated until the time T5. For this reason, the PWM control of the Peltier drive power supply is continued until time point T5, whereby the monitor temperature Tmon and the semiconductor junction temperature Tj are maintained at the low temperature side maintenance temperatures Tmin and Tjmin, respectively.

  And when it becomes time T5, it will be judged as YES in a process (S224). As a result, the step (S230) shown in FIG. 6 is performed. In step (S230), it is determined whether the temperature raising step (step (S211) to step (S214)) and the cooling step (step (S221) to step (S224)) have been repeated a predetermined number of times. When it is determined NO in the step (S230), the steps after the step (S211) are sequentially repeated again.

  That is, the temperature raising process is started again from time T5 in FIG. The control started from time T5 is just the same as the control started from time T1. That is, at time T5, a step (S211) of turning on the semiconductor and heater drive power, turning off the Peltier drive power, and cutting the heat generating portion base plate is performed. From this time T5, as shown in FIG. 7, the monitor temperature Tmon and the semiconductor junction temperature Tj start to rise. Then, the process (S212) is repeated until time T6. Further, at time T6, as in the case of time T2, the semiconductor junction temperature Tj reaches Tjmax, which is the high temperature side maintenance temperature, and the monitor temperature Tmon reaches Tmax, which is the high temperature side maintenance temperature. Then, as in the case of time T2, at step T6, YES is determined in step (S212), and step (S213) is performed.

  Further, if it is determined YES in the step (S230), that is, if it is determined that the temperature raising step and the cooling step are repeated a predetermined number of times, the thermal cycle test is ended, so that Peltier driving as post-processing is performed. A step of turning off the power (S241) is performed. In this manner, the test process (S200) in case 1 is performed.

(Case 2)
In order to control the total calorific value (Qgen) from the measured object 1 and the heater 71, voltage control (also referred to as voltage change control) is applied to the measured power supply 21 and the heater driving power supply 22, and the Peltier When controlling the amount of heat (Qr) removed from the measured object 1 through the heat generating part base plate 45, the base plate 5, the Peltier element 9, and the radiator 11 by applying voltage control to the element power source 23 as well. It is. A specific control flow is shown in FIG. 8, and a timing chart showing changes in power ON / OFF, changes in voltage conditions, and changes in temperature conditions is shown in FIG. FIG. 8 is a flowchart showing a test process in an example of a device evaluation method according to the present invention. FIG. 9 is a timing chart showing changes in power ON / OFF, voltage conditions, and temperature conditions in the test process according to the flowchart shown in FIG. In FIG. 9, the horizontal axis indicates time, and the vertical axis indicates six characteristic values. That is, the vertical axis in FIG. 9 shows the change in the semiconductor junction temperature Tj in the semiconductor device from the top, the change in the temperature of the device under test 1 (monitor temperature Tmon) measured by the thermocouple 7a in FIG. ON / OFF of 23 (Peltier drive power supply), ON / OFF of the power supply 21 to be measured and the heater drive power supply 22 (semiconductor and heater drive power supply), change in voltage level of the semiconductor and heater drive power supply and the Peltier drive power supply In addition, ON / OFF of the lifting drive power source 35 (isolation (cutting) / contact (connection) between the heating unit base plate 45 and the base plate 5 by the lifting unit drive control which is the drive control of the moving member 40) is shown. With reference to FIG. 8 and FIG. 9, the test process in an example (case 2) of the device evaluation method according to the present invention will be described.

  Referring to FIGS. 8 and 9, in the test process, first, as part of the temperature raising process (S210) (see FIG. 3), the semiconductor and heater drive power is turned on, the Peltier drive power is turned off, and the heating part base plate is turned on. A step (S218) of cutting (separation of the heat generating portion base plate 45 and the base plate 5) is performed. This step (S218) is performed at time T1 in the timing chart of FIG. At this time, the voltage setting value of the semiconductor and heater driving power source is set to the maximum value (Vmax), and the voltage setting value of the Peltier driving power source is set to the minimum value (Vmin). From this time T1, the monitor temperature Tmon and the semiconductor junction temperature Tj start to rise as shown in FIG. During the test process (S200), the power to be measured 1 and the heater 71 are supplied from the power supply 21 to be measured and the heater drive power supply 22 (see FIG. 1) to the temperature to be measured 1 and the heater 71.

  Then, in the step (S216) of FIG. 8, the voltage setting values of the semiconductor and heater driving power supply are changed from Vmax to Vmin. Specifically, a step of determining whether or not a predetermined time from a time T1 to a specific time has elapsed from the time T1 is performed, and when it is determined that the predetermined time has elapsed from the time T1 in the step Then, a step of reducing the voltage set value from Vmax is started. Then, similarly to the step (S212) in FIG. 6, it is determined from the monitor temperature Tmon whether or not the semiconductor junction temperature Tj has reached Tjmax, which is the maintenance temperature on the high temperature side. In the same step as this step (S212), NO is determined until time T2 in FIG. 9, and therefore, this step is repeated until time T2 in FIG.

  At time T2 in FIG. 9, the semiconductor junction temperature Tj reaches Tjmax, which is the high-temperature side maintenance temperature, and the monitor temperature Tmon reaches Tmax, which is the high-temperature side maintenance temperature. The semiconductor junction temperature Tj is obtained from the monitor temperature Tmon by calculation.

  Thus, when the semiconductor junction temperature Tj reaches Tjmax at time T2, YES is determined in the above-described step similar to the step (S212), and the decrease in the voltage setting of the semiconductor drive power supply is stopped. The voltage setting values of the semiconductor and the heater driving power supply at this time are the lower limit value (Vmin) of the voltage setting. Thereafter, the voltage setting values of the semiconductor and heater drive power supply are maintained at Vmin. In this way, by changing the voltage setting values of the semiconductor and the heater drive power supply, the total heat generation amount Qgen from the measured object 1 and the heater 71 and the measured object 1 via the heat generating part base plate 45 or the measured value. The amount of heat Qr directly removed from the body 1 becomes equal. Therefore, as shown in FIG. 9, the monitor temperature Tmon and the semiconductor junction temperature Tj can be maintained at the maintenance temperatures Tmax and Tjmax on the high temperature side, respectively.

  Next, in step (S217), the voltage setting value of the Peltier drive power supply is changed from Vmin to the maximum value (Vmax). Specifically, the process of determining whether or not a predetermined time has elapsed from time T2 shown in FIG. 9 (whether or not time T3 has been reached) is performed, and it is determined that time T3 has been reached in the process. Then, a step of increasing the voltage setting value of the Peltier drive power supply from Vmin and changing it to the maximum value (Vmax) is started. After this process is started, the voltage setting value of the Peltier drive power supply is changed to the maximum value (Vmax) after a very short time has elapsed.

  Then, the state in which the monitor temperature Tmon and the semiconductor junction temperature Tj as described above are maintained constant starts at time T2 in FIG. 9 and continues for a predetermined time. At this time, in the control flow shown in FIG. 8, whether a predetermined time has elapsed since the semiconductor junction temperature Tj became Tjmax in the step (S214) (whether the time from time T2 to time T4 has elapsed). To be judged. Until time T4 in FIG. 9 is NO in step (S214), step (S214) is repeated until time T4. For this reason, the ON state of the semiconductor and heater drive power supply is continued until time T4. Further, since the voltage setting values of the semiconductor and the heater driving power supply are maintained at the minimum value (Vmin) from the time point T2, the total heat generation amount (Qgen) from the measured object 1 and the heater 71 and the measured value are measured as described above. Since the heat radiation amount (Qr) from the body 1 is balanced, the monitor temperature Tmon and the semiconductor junction temperature Tj are maintained at the high temperature side maintenance temperatures Tmax and Tjmax, respectively.

  When time T4 is reached, YES is determined in the step (S214), and the cooling step (S220) in FIG. 5 is started. Specifically, at time T4 in FIG. 9, the semiconductor and heater drive power is turned off, the Peltier drive power is turned on, and the heat generating unit base plate 45 is connected to the base plate 5 (the connection state is set by the lifting unit drive control). ) Step (S221) is performed. As a result, as shown in FIG. 9, the monitor temperature Tmon and the semiconductor junction temperature Tj start to decrease from time T4.

  Thereafter, in the flowchart shown in FIG. 8, it is determined in step (S222) whether or not the semiconductor junction temperature Tj has become the low temperature side maintenance temperature Tjmin. Then, as shown in FIG. 9, it is determined NO in the step (S222) until time T5 when the semiconductor junction temperature Tj becomes the low temperature side maintenance temperature Tjmin (that is, the monitor temperature Tmon becomes the low temperature side maintenance temperature Tmin). The Therefore, the process (S222) is repeated until the time point T5 is reached.

  Then, when the time T5 shown in FIG. 9 is reached and the semiconductor junction temperature Tj becomes the maintenance temperature Tjmin on the low temperature side, YES is determined in the step (S222). As a result, the step (S225) is performed. In step (S225), the voltage setting value of the Peltier driving power supply is changed from Vmax to Vmin, and the voltage setting values of the semiconductor and heater driving power supply are changed from Vmin to Vmax. Note that the timing for starting the change of the voltage setting value of the Peltier drive power supply from Vmax to Vmin may be before time T5. Specifically, a step of determining whether or not a predetermined time has elapsed from time T4 is performed, and when the predetermined time has elapsed in the step, the change of the voltage setting value of the Peltier drive power supply from Vmax to Vmin is started. Also good. Then, by changing the voltage setting value of the Peltier drive power source to Vmin, the amount of heat Qr transmitted from the base plate 5 side to the radiator 11 side in the Peltier element 9 is controlled. As a result, the total calorific value Qgen from the measured object 1 and the heater 71 is transmitted from the measured object 1 and the heating part base plate 45 to the radiator 11 via the base plate 5 and the Peltier element 9 and is removed by the refrigerant 17. The amount of heat Qr is in a predetermined balance. Therefore, as shown in FIG. 9, the monitor temperature Tmon and the semiconductor junction temperature Tj can be maintained at the low temperature side maintenance temperatures Tmin and Tjmin, respectively.

  Then, the state in which the monitor temperature Tmon and the semiconductor junction temperature Tj as described above are maintained constant starts at time T5 in FIG. 9 and continues for a predetermined time. At this time, in the control flow shown in FIG. 8, whether a predetermined time has passed since the semiconductor junction temperature Tj became Tjmin in the step (S224) (whether the time from time T5 to time T6 has passed). To be judged. Until time T6 in FIG. 9 is NO in step (S224), step (S224) is repeated until time T6. For this reason, the control of turning off the semiconductor drive power supply while the Peltier drive power supply is turned on while the voltage setting value of the Peltier drive power supply is set to Vmin until time T6, the monitor temperature Tmon and the semiconductor junction temperature are maintained. Tj is maintained at maintenance temperatures Tmin and Tjmin on the low temperature side, respectively.

  And when it becomes time T6, it will be judged as YES in a process (S224). As a result, the step (S230) shown in FIG. 8 is performed. In step (S230), it is determined whether the temperature increasing step (step (S218) to step (S214) in FIG. 8) and the cooling step (step (S221) to step (S224) in FIG. 8) have been repeated a predetermined number of times. When it is determined NO in the step (S230), the steps after the step (S218) are sequentially repeated again.

  That is, the temperature raising process is started again from time T6 in FIG. The control started from time T6 is just the same as the control started from time T1. That is, at time T6, the step of turning on the semiconductor and heater drive power, turning off the Peltier drive power, and cutting the heat generating part base plate (isolating the heat generating part base plate 45 and the base plate 5) (S218) is performed. At this time, the voltage setting value of the semiconductor and heater driving power source is set to the maximum value (Vmax), and the voltage setting value of the Peltier driving power source is set to the minimum value (Vmin). From this time T6, as shown in FIG. 9, the monitor temperature Tmon and the semiconductor junction temperature Tj start to rise. Then, at time T7 in FIG. 9, the step (S216) in FIG. 8 is performed. Specifically, a step of changing the voltage setting values of the semiconductor and heater driving power source from Vmax to Vmin is started. At time T8 in FIG. 9, the semiconductor junction temperature Tj reaches Tjmax, which is the high temperature side maintenance temperature, and the monitor temperature Tmon reaches Tmax, which is the high temperature side maintenance temperature.

  Further, if it is determined YES in the step (S230), that is, if it is determined that the temperature raising step and the cooling step are repeated a predetermined number of times, the thermal cycle test is ended, so that Peltier driving as post-processing is performed. A step of turning off the power (S241) is performed. In this way, the test process (S200) in case 2 is performed.

  FIG. 10 is a schematic diagram showing a modification of the first embodiment of the evaluation device shown in FIG. A modification of the evaluation apparatus shown in FIG. 1 will be described with reference to FIG.

  Referring to FIG. 10, evaluation device 30 basically has the same configuration as the evaluation device shown in FIG. 1, but has a structure for moving heat generating portion base plate 45 in the direction indicated by arrow 47. This is different from the evaluation device 30 shown in FIG. Specifically, in the evaluation apparatus 30 shown in FIG. 10, in order to move the heat generating portion base plate 45 in the upward direction (the direction away from the base plate 5) in the direction indicated by the arrow 47, FIG. Similarly, a moving member 40 including a solenoid coil 41 is used. On the other hand, a spring 51 as an elastic member is used to move (press) the heat generating portion base plate 45 in the downward direction (direction approaching the base plate 5) in the direction indicated by the arrow 47.

  One end of the spring 51 is connected and fixed to a member (for example, the sealed case 28) whose relative position is fixed to the base plate 5. The other end, which is the end opposite to the one end of the spring 51, is connected in a state where stress can be applied to the heat generating portion base plate 45. For example, the other end portion of the spring 51 may be in contact with or fixed to the upper wall portion 50 installed at the end portion of the arm portion 39 connected to the heat generating portion base plate 45 as shown in FIG. Alternatively, the other end portion of the spring 51 may be in contact with or fixed to the upper portion of the arm portion 39 (the end portion opposite to the end portion (lower end) connected to the heat generating portion base plate 45).

  Further, the number of the springs 51 may be one, but may be two or more. Even with such a configuration, the same effect as that of the evaluation apparatus shown in FIG. 1 can be obtained. Furthermore, in the evaluation apparatus 30 shown in FIG. 10, when the heat generating unit base plate 45 is brought into contact with the base plate 5, the lower surface of the heat generating unit base plate 45 is pressed against the surface of the base plate 5 by the spring 51. And the base plate 5 can be reliably contacted. Furthermore, the contact thermal resistance of the contact portion between the heat generating portion base plate 45 and the base plate 5 can be reduced. For this reason, the to-be-measured object 1 can be cooled efficiently.

(Embodiment 2)
FIG. 11 is a schematic diagram of Embodiment 2 of the evaluation apparatus according to the present invention. FIG. 12 is an enlarged schematic view showing a moving member in the evaluation apparatus shown in FIG. A second embodiment of the evaluation device according to the present invention will be described with reference to FIGS.

  As shown in FIG. 11 and FIG. 12, the evaluation apparatus 30 as the second embodiment of the device evaluation apparatus according to the present invention basically has the same configuration as the evaluation apparatus 30 shown in FIG. The structure for moving the heat generating portion base plate 45 in the direction indicated by the arrow 47 is different from the evaluation device 30 shown in FIG.

  That is, in the evaluation apparatus 30 shown in FIGS. 11 and 12, one moving member 55 is disposed via the support column 52 connected to the heat generating unit base plate 45. The moving member 55 is fixed to a member (for example, the sealed case 28) different from the heat generating portion base plate 45 whose position is fixed relative to the base plate 5. The moving member 55 detaches the heat generating portion base plate 45 from the base plate 5 by moving the column portion 52 in the direction along the arrow 47. As shown in FIG. 12, the moving member 55 moves the column portion 52 by the rotational force of the motor 56 as a drive source.

  More specifically, in the evaluation apparatus 30 shown in FIGS. 11 and 12, the arm part 39 is connected to the end of the heat generating part base plate 45, and the upper wall part 50 is connected to the upper end of the arm part 39. . A column portion 52 is connected to the upper surface of the upper wall portion 50 disposed at a position facing the heat generating portion base plate 45. A thread groove portion 60 in which a thread groove is formed along the extending direction of the pillar portion 52 is disposed on the side surface of the pillar portion 52.

  The moving member 55 includes a relay gear 59 that meshes with the screw groove of the screw groove portion 60 of the support column 52 and a motor 56 that rotates the relay gear 59. A motor side gear 58 is installed on the motor shaft 57 of the motor 56. The motor side gear 58 and the relay gear 59 are engaged with each other as shown in FIG. When the motor 56 is driven and the motor side gear 58 is rotated in the direction indicated by the arrow 61, the relay gear 59 is rotated in the direction indicated by the arrow 62. As a result, the heating portion base plate 45 is attached to and detached from the base plate 5 by moving the column portion 52 in the direction indicated by the arrow 47. Since the number of teeth of the relay gear 59 is larger than the number of teeth of the motor-side gear 58, the rotation speed of the relay gear 59 can be made slower than the rotation speed of the motor shaft 57. For this reason, it is possible to more accurately control the moving speed and the moving amount of the support column 52 in the vertical direction (the direction indicated by the arrow 47).

  Such an evaluation apparatus 30 can also obtain the same effects as those of the evaluation apparatus shown in FIG.

  11 and 12 may be installed on the upper wall portion 50 connected to the heat generating portion base plate 45 via the arm portion 39 as shown in FIGS. 11 and 12, but it is directly installed on the heat generating portion base plate 45. May be.

  FIG. 13 is an enlarged schematic diagram showing a first modification of the second embodiment of the evaluation apparatus shown in FIGS. 11 and 12. With reference to FIG. 13, a first modification of the second embodiment of the evaluation apparatus according to the present invention will be described. FIG. 13 corresponds to FIG.

  Referring to FIG. 13, the first modification of the second embodiment of the evaluation apparatus basically includes the same configuration as that of evaluation apparatus 30 shown in FIGS. 11 and 12, except that heating unit base plate 45 is provided. The mechanism for moving in the vertical direction (the direction indicated by the arrow 47) is different. Specifically, the column part 52 is connected to the upper wall part 50 so as to be rotatable at the connection part 64.

  Further, a thread groove portion 63 formed of a spiral thread groove is formed in the support column 52. Further, a motor side gear 58 is arranged so as to mesh with the screw groove 63. The motor side gear 58 is connected to the motor shaft 57 of the motor 56. The motor 56 is fixed to another member independent of the heat generating portion base plate 45 in the evaluation device 30. In addition, in a state where the contact between the motor-side gear 58 and the thread groove 63 of the support column 52 is maintained, the support column 52 is supported to be movable in the extending direction. Any conventionally known method can be used as a method of supporting the support column 52. The motor side gear 58 is rotated by the rotation of the motor shaft 57, and as a result, the support column 52 is rotated. In accordance with the rotation of the support column 52, the vertical position of the support column 52 with respect to the motor-side gear 58 changes, so that the heat generating unit base plate 45 can be moved in the vertical direction together with the support column 52. . Even with the evaluation apparatus having such a configuration, the same effects as those of the evaluation apparatus shown in FIGS. 11 and 12 can be obtained.

  14 and 15 are enlarged schematic views showing a second modification of the second embodiment of the evaluation apparatus shown in FIGS. 11 and 12. With reference to FIG. 14 and FIG. 15, the 2nd modification of Embodiment 2 of the evaluation apparatus by this invention is demonstrated. FIG. 15 corresponds to FIG. FIG. 14 shows fins formed on the support column of the evaluation apparatus shown in FIG.

  Referring to FIGS. 14 and 15, the second modification of the second embodiment of the evaluation apparatus basically has the same configuration as that of evaluation apparatus 30 shown in FIGS. The mechanism for moving the base plate 45 in the vertical direction (the direction indicated by the arrow 47) is different. Specifically, the column part 52 is connected to the upper wall part 50 so as to be rotatable at the connection part 64. In addition, the pillar 52 is formed with a flange-like fin 65 that has a disk shape in a plan view and is arranged so as to extend outward from the side wall of the pillar 52. The fins 65 are alternately arranged with portions 67 and 68 whose positions in the extending direction (axial direction) of the support column 52 are different from each other, and have a shape that undulates in the extending direction of the support column 52 as a whole. The portion of the fin 65 that connects the portion 67 and the portion 68 has a smooth curved surface.

  Further, a motor shaft 57 of a stepping motor 70 as a driving member is directly connected to the upper portion of the support column 52. As a result, the rotation of the motor shaft 57 of the stepping motor 70 can be directly transmitted to the support column 52. That is, as the motor shaft 57 rotates, the support column 52 also rotates. Note that the stepping motor 70 is movable in the vertical direction together with the support column 52. For example, the stepping motor 70 may be connected to a member independent of the heat generating portion base plate 45 so as to be movable in the vertical direction via a linear guide or the like.

  And the support part 66 is arrange | positioned so that the lower surface (surface which opposes the heat generating part baseplate 45) of the said fin 65 may be contacted. The support portion 66 is fixed to a member independent of the heat generating portion base plate 45 (for example, the sealed case 28). The fins 65 are also rotated by the rotation of the support column 52. When the portion of the fins 65 that contacts the support portion 66 is changed from the portion 67 to the portion 68 with the rotation of the fins 65, the lower surface of the portion 67 is rotated. The column portion 52 is lifted upward (on the motor 56 side) by a distance in the direction along the extending direction of the column portion 52 between the lower portion 68 and the lower surface of the portion 68. As a result, the heat generating portion base plate 45 can be detached from the base plate 5. When the motor shaft 57 is further rotated by driving the stepping motor 70, the support portion 66 and the contact portion of the fin 65 change from the portion 68 to the portion 67. As a result, the support column 52 moves downward due to its own weight. In this manner, the heat generating portion base plate 45 can be detached from the base plate 5 by the rotation of the stepping motor 70 and the contact between the fin 65 and the support portion 66. Even with the evaluation apparatus having such a configuration, the same effects as those of the evaluation apparatus shown in FIGS. 11 and 12 can be obtained.

  Even using the second embodiment of the evaluation apparatus according to the present invention described above, the device evaluation method as shown in FIGS. 4 to 9 can be performed.

  Next, although there are some overlapping with the above embodiments, examples of the present invention will be listed and described.

  An evaluation apparatus 30 as a device evaluation apparatus according to the present invention includes a holding member (heat generating part base plate 45) and a cooling member (base plate 5, Peltier element 9, radiator 11, refrigerant flow path 13, heat exchanger 15, and pump 14). , Refrigerant 17), heating member (heater 71), moving members 40 and 55, and a control unit (control device 29). The holding member (the heat generating portion base plate 45) holds the device under test 1 including a semiconductor device and supplied with electric power. The cooling member is detachably in contact with the holding member (the heat generating portion base plate 45), and is used to remove the heat of the DUT 1 via the holding member. The heating member (heater 71) heats the measurement object 1. The moving members 40 and 55 move so that the holding member (the heat generating portion base plate 45) is attached to and detached from the cooling member (specifically, the base plate 5). The control unit (control device 29) controls the cooling member, the heating member, and the moving member.

  In this way, the heat generating portion base plate 45 can be separated from the base plate 5 constituting the cooling member by the moving members 40 and 55. For this reason, when the measured object 1 is heated by the heater 71 or when the measured object 1 itself generates heat, the heating part base plate 45 that holds the measured object 1 by the moving members 40 and 55 is separated from the base plate 5. Since the heat can be transferred from the device under test 1 to the radiator 11 through the base plate 5, the temperature rise rate of the device under test 1 is slowed down, or the temperature rise of the device under test 1 cannot be sufficiently raised. Can be suppressed. Further, when the measured object 1 is cooled, the heating member base plate 45 that holds the measured object 1 can be brought into contact with the base plate 5 by the moving members 40 and 55. Therefore, heat can be reliably transmitted from the measured object 1 to the base plate 5, the Peltier element 9 and the radiator 11 via the heat generating part base plate 45, so that the measured object 1 can be quickly and reliably cooled. .

  Further, when the temperature of the device under test 1 is raised, the device under test 1, the base plate 5 and the Peltier element 9 are not thermally connected, so that the Peltier device 9 constituting the cooling member is connected to the device under test 1. It is possible to prevent excessive heating due to the temperature rise. For this reason, generation | occurrence | production of the problem that the Peltier device 9 fails by excessive heating or a lifetime becomes short can be suppressed. Furthermore, since the influence by the excessive heating with respect to the Peltier device 9 can be suppressed, the heating temperature of the to-be-measured object 1 can be set to a sufficiently high temperature range. Therefore, even when the semiconductor device of the device under test 1 operates in a higher temperature range than a device using conventional silicon, such as a device using SiC, the operating temperature range of the device under test 1 (higher than before). Can be easily performed.

  As shown in FIG. 1 and the like, the evaluation apparatus 30 further includes a sealed case 28 capable of isolating the measured object 1 thermally connected to the electronic cooling element (Peltier element 9) from at least the outside air. May be. In this case, by appropriately adjusting the composition of the atmospheric gas inside the sealed case 28, it is possible to prevent dew condensation from occurring on the surface of the measured object 1 as the temperature of the measured object 1 rises and falls. . As a result, it is possible to prevent a problem such as a failure from occurring in the measurement object 1 due to the condensation.

  Further, in the evaluation apparatus 30, the sealed case 28 includes the measured object 1, the electronic cooling element (Peltier element 9), and a part of the heat radiating member (connection portion of the heat radiator 11 and the refrigerant flow path 13 to the heat radiator 11). You may form so that it may surround. In this case, by appropriately adjusting the composition of the atmospheric gas inside the sealed case 28, the surface of the measured object 1, the electronic cooling element (Peltier element 9), the heat radiating member (heat radiator 11 or refrigerant flow path 13), etc. Condensation can be prevented from occurring. For this reason, a failure occurs in the electronic cooling element, the heat radiating member, etc. due to the condensation, or the electronic cooling element (Peltier element 9) cannot be operated normally, and as a result, the test cannot be performed normally. Can be prevented.

  The evaluation apparatus 30 may further include a temperature sensor (thermocouple 7a) that measures the temperature of the measurement target 1. In this case, since the temperature of the device under test 1 can be measured by the temperature sensor (thermocouple 7a), it is possible to accurately monitor whether the temperature change of the device under test 1 matches the temperature change planned in the test. it can. Moreover, since the temperature of the measurement object 1 can be accurately measured by the temperature sensor (thermocouple 7a), the temperature data can be fed back to the control of the evaluation device 30. As a result, accurate temperature control can be performed in the evaluation device 30.

  The evaluation device 30 may further include a current sensor for a measured object (current sensor 25 connected to the power supply for measured object 21) that measures a current supplied to the measured object 1. In this case, by measuring the value of the current supplied to the device under test 1, it is possible to quickly detect an abnormality in the evaluation device 30 or the device under test 1 that affects the value of the current.

  For example, in the current sensor 25, a Hall element or a current transformer can be used as a current detection sensor. When the current sensor 25 detects a current value higher than a predetermined current value (when an overcurrent is detected), the controller 26 cuts off the supply of power to the device under test 1. At the same time, the test is stopped by the controller 26 and an abnormality of the evaluation device 30 is notified to the user. As the notification means, for example, a display device such as an LCD or a CRT installed in the evaluation device 30 may display that the value of the current supplied to the measured object 1 has become excessive, or / and simultaneously a speaker. An alarm sound may be generated from the above.

  Further, when a current value lower than a predetermined current value is detected in the current sensor 25 (when an undercurrent is detected), similarly to the above-described case, the controller 26 supplies power to the DUT 1. Shut off the supply. At the same time, the test is stopped by the controller 26 and an abnormality of the evaluation device 30 is notified to the user. As the notification means, a display device or a speaker as described above may be used.

  The evaluation device 30 may further include a current sensor for a measured object that measures the current supplied to the moving members 40 and 55 (the current sensor 25 connected to the lifting drive power supply 35). In this case, by measuring the value of the current supplied to the moving members 40 and 55, it is possible to quickly detect an abnormality in the evaluation device 30 and the moving members 40 and 55 that affect the current value. .

  For example, in the current sensor 25, a Hall element or a current transformer can be used as a current detection sensor. When the current sensor 25 detects a current value higher than a predetermined current value (when an overcurrent is detected), the controller 26 cuts off the power supply to the moving members 40 and 55. . At the same time, the test is stopped by the controller 26 and an abnormality of the evaluation device 30 is notified to the user. As the notification means, for example, a display device such as an LCD or CRT installed in the evaluation device 30 may display that the value of the current supplied to the moving members 40 and 55 is excessive, or / and simultaneously. An alarm sound or the like may be generated from a speaker or the like.

  Also, when a current value lower than a predetermined current value is detected in the current sensor 25 (when an undercurrent is detected), similarly to the above-described case, the controller 26 supplies power to the moving members 40 and 55. Shut off the supply. At the same time, the test is stopped by the controller 26 and an abnormality of the evaluation device 30 is notified to the user. As the notification means, a display device or a speaker as described above may be used.

  The evaluation apparatus 30 may further include an electronic cooling element current sensor (current sensor 25 connected to the Peltier element power supply 23) for measuring a current supplied to the electronic cooling element (Peltier element 9). In this case, when a change occurs in the value of the current supplied to the electronic cooling element due to the failure of the electronic cooling element (Peltier element 9), the abnormality of the evaluation apparatus 30 due to the failure of the electronic cooling element is quickly detected. Can be detected.

  As a current detection sensor used in the current sensor 25, for example, a Hall element or a shunt resistor can be used. When the current sensor 25 detects a current value higher than a predetermined current value (when an overcurrent is detected), the controller 26 supplies power to the Peltier element 9 and the DUT 1. Shut off. At the same time, the test is stopped by the controller 26 and an abnormality of the evaluation device 30 is notified to the user.

  Also, when a current value lower than a predetermined current value is detected by the current sensor 25 (when an undercurrent is detected), the Peltier element 9 and the DUT 1 are measured by the controller 26 as in the above case. Shut off the power supply to At the same time, the test is stopped by the controller 26 and an abnormality of the evaluation device 30 is notified to the user. As the notification means, a display device or a speaker as described above may be used.

  In the evaluation apparatus 30, the cooling member is provided via a surface portion (upper surface portion of the base plate 5) that comes into contact with the holding member (the heat generating portion base plate 45), and the surface portion and the electronic cooling element (Peltier element 9). The base member (heat radiator 11) connected to each other and the refrigerant 17 for removing heat from the base member (heat radiator 11) may be included. The control unit (control device 29) can control the power supplied to the electronic cooling element (Peltier element 9). The evaluation device 30 may further include a refrigerant temperature sensor (the temperature sensor 16 installed in the refrigerant flow path 13) for measuring the temperature of the refrigerant 17. In this case, since the temperature of the refrigerant 17 can be monitored by the refrigerant temperature sensor 16, the cooling efficiency decreases due to an abnormality occurring in the heat radiating member (for example, the refrigerant amount decreases due to the leakage of the refrigerant 17 from the refrigerant flow path 13 or the like). Etc.) can be detected quickly.

  In addition, a thermocouple etc. can be used as the temperature sensor 16 mentioned above. When the temperature sensor 16 detects a temperature higher than the set temperature, the controller 26 cuts off the supply of power to the DUT 1 and the Peltier element 9. At the same time, the test is stopped by the controller 26 and an abnormality of the evaluation device 30 is notified to the user. As the notification means, a display device or a speaker as described above may be used.

  In the evaluation device 30, the device under test power supply 21, the heater drive power supply 22, the Peltier element power supply 23, the cooling system power supply 24, and the lift drive power supply 35 are each supplied with an excessive load on these power supplies. It is preferable to set a fuse in order to protect this. As a result, it is possible to prevent the evaluation apparatus 30 from being damaged due to overcurrent or the like.

  In the evaluation device 30, the control unit (the control device 29) may be capable of controlling the power supplied to the measured object 1 and / or the power supplied to the heater 71 by PWM control or voltage control. In this case, it is possible to finely control the amount of heat generated from the measurement object 1 and the heater 71. Therefore, the temperature of the device under test 1 can be maintained with high accuracy in a relatively high temperature state or a relatively low temperature state and a constant temperature state.

  In the evaluation device 30, the control unit (control device 29) may be capable of controlling the power supplied to the electronic cooling element (Peltier element 9) by PWM control or voltage control. In this case, the cooling capacity of the electronic cooling element (Peltier element 9) can be finely controlled. Therefore, temperature control of the DUT 1 can be performed with high accuracy.

  The evaluation apparatus 30 may further include a fixing member that connects and fixes the electronic cooling element (Peltier element 9) to the heat dissipation member (the upper surface of the radiator 11). In this case, the electronic cooling element (Peltier element 9) is radiated by a fixing member (for example, a flange portion on which the Peltier element 9 is formed and a fixing screw for connecting and fixing the flange portion and the radiator 11). 11) can be securely connected and fixed.

  In the evaluation apparatus 30, a plurality of objects to be measured 1 may be installed on the heat generating part base plate 45. In this case, an evaluation test (thermal cycle test) can be performed on a plurality of measured objects 1 simultaneously. For example, in the evaluation apparatus 30 shown in FIG. 1, a plurality of measured objects 1 may be arranged side by side on the upper surface of the heat generating part base plate 45. In this case, it is preferable to form a groove (concave portion) at a position facing the lower surface of each measured object 1 on the upper surface of the heat generating portion base plate 45 and to dispose a thermocouple in each of the grooves. In this way, an evaluation test can be performed while accurately measuring the temperature of each measured object 1.

  In the evaluation apparatus 30, the device under test 1 may be connected to an electronic cooling element (Peltier element 9) via a heating part base plate 45 and a base plate 5 as shown in FIG. The planar shape of the heat generating part base plate 45 and the base plate 5 may be larger than the planar shape of the DUT 1. In this case, the heat generated from the DUT 1 can be transmitted to the electronic cooling element (Peltier element 9) after being diffused to some extent by the heat generating part base plate 45 and the base plate 5. Therefore, when the cooling capacity per unit area is not so large in the electronic cooling element (Peltier element 9), the heat transfer area is increased by the heat generating part base plate 45 or the base plate 5 and then connected to the base plate 5. By increasing the area of the endothermic surface of the electronic cooling element (Peltier element 9), sufficient cooling capacity can be ensured.

  The device evaluation method according to the present invention is a device evaluation method using the evaluation apparatus 30 as shown in FIG. 5, in which a measurement object 1 is held by a holding member (heat generating part base plate 45) (covered object). A measuring body preparation step (S100)) and a test step (S200). In the test step (S200), by driving the moving members 40 and 55, power is supplied to the heating member (heater 71) in a state where the holding member (heat generating portion base plate 45) is isolated from the cooling member (base plate 5). Then, the holding member (heat generating part base plate 45) is brought into contact with the cooling member (base plate 5) by driving the heating member (temperature raising step (S210)) for raising the temperature of the DUT 1 and the moving members 40 and 55. The cooling process (S220) for cooling the DUT 1 by transferring the heat of the DUT 1 to the cooling members (base plate 5, Peltier element 9, radiator 11, refrigerant 17) in the state once As described above, the cooling member, the heating member, and the moving member are controlled by the control unit (control device 29).

  In this way, the temperature of the measured object 1 can be raised in a state where the measured object 1 is not thermally connected to the base plate 5 that constitutes the cooling member, so that the Peltier element 9 that constitutes the cooling member. While the temperature of the device under test 1 is efficiently raised while preventing the sample from being heated excessively, when the device under test 1 is cooled, the device under test is measured via a holding member (heat generating part base plate 45). By thermally connecting 1 and the cooling member, the heat of the body 1 to be measured is transmitted to the cooling member, whereby the thermal cycle test for the body 1 to be measured can be easily performed.

  In the device evaluation method, PWM control or voltage control may be used to control the heating member (heater 71) and the cooling member (such as the Peltier element 9 as an electronic cooling element) by the control unit (control device 29). In this case, the amount of heat generated from the measured object 1 and the amount of heat absorbed by the Peltier element 9 (that is, the amount of heat transmitted to the radiator 11) can be accurately controlled by PWM control or voltage control. Therefore, a constant temperature condition in the high temperature range and the low temperature range can be easily realized in the thermal cycle test.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The device evaluation apparatus and the device evaluation method according to the present invention perform a thermal cycle test of a device (for example, a device using SiC) that is used in a higher temperature range than a semiconductor device using a conventional silicon substrate. Is preferably used.

It is a schematic diagram of Embodiment 1 of the evaluation apparatus according to the present invention. It is a plane schematic diagram of the heat generating part base plate carrying the to-be-measured body in the evaluation apparatus shown in FIG. It is a cross-sectional schematic diagram in line segment III-III of FIG. It is a flowchart which shows the device evaluation method using the evaluation apparatus shown in FIG. It is a flowchart which shows the content of the test process in the flowchart shown in FIG. It is a flowchart which shows the test process in an example of the device evaluation method by this invention. 7 is a timing chart showing power ON / OFF and transition of temperature conditions in a test process according to the flowchart shown in FIG. 6. It is a flowchart which shows the test process in an example of the device evaluation method by this invention. FIG. 9 is a timing chart showing changes in power supply ON / OFF, voltage condition change, and temperature condition in a test process according to the flowchart shown in FIG. 8. It is a schematic diagram which shows the modification of Embodiment 1 of the evaluation apparatus shown in FIG. It is a schematic diagram of Embodiment 2 of the evaluation apparatus according to the present invention. It is an expansion schematic diagram which shows the moving member in the evaluation apparatus shown in FIG. It is an expansion schematic diagram which shows the 1st modification of Embodiment 2 of the evaluation apparatus shown in FIG. 11 and FIG. It is an expansion schematic diagram which shows the 2nd modification of Embodiment 2 of the evaluation apparatus shown in FIG. 11 and FIG. It is an expansion schematic diagram which shows the 2nd modification of Embodiment 2 of the evaluation apparatus shown in FIG. 11 and FIG.

Explanation of symbols

  1 Measurement object, 3 grease, 5 base plate, 7a, 7b thermocouple, 9 Peltier element, 10 flange, 11 radiator, 12 fixing screw, 13 refrigerant flow path, 14 pump, 15 heat exchanger, 16 temperature sensor , 17 Refrigerant, 18a, 18b Holding member, 19 Support member, 20 Fixing member, 21 Power supply for measured object, 22 Power supply for heater, 23 Peltier element power supply, 24 Cooling system power supply, 25 Current sensor, 26 Controller, 28 Sealed case, 29 Control device, 30 Evaluation device, 35 Lift drive power supply, 38 Cover material, 39 Arm part, 40, 55 Moving member, 41 Solenoid coil, 45 Heat generating part base plate, 47, 61, 62 Arrow, 50 Upper wall Part, 52 strut part, 56 motor, 57 motor shaft, 58 motor side gear, 59 relay gear, 6 0,63 screw groove, 64 connection, 65 fin, 66 support, 67, 68 part, 70 stepping motor, 71 heater, 72 fixing part, 73 thermocouple groove, 74 heater groove, 75 insulator, 76 metal Resistor.

Claims (10)

A holding member for holding a measured object including a semiconductor device to which power is supplied;
A cooling member for detachably contacting the holding member, and for removing heat of the measurement object via the holding member;
A heating member that is disposed inside a groove formed in the holding member and heats the object to be measured;
A moving member that moves so that the holding member is attached to and detached from the cooling member;
A controller that controls the cooling member, the heating member, and the moving member;
The cooling member includes a surface portion detachably contacting the holding member, a base member connected to the surface portion via an electronic cooling element, and a refrigerant for removing heat from the base member,
The control unit can control the power supplied to the electronic cooling element;
A device evaluation apparatus further comprising a refrigerant temperature sensor for measuring the temperature of the refrigerant.   The device evaluation apparatus according to claim 1, further comprising a sealed case capable of isolating the measured object from at least outside air.   The device evaluation apparatus according to claim 1, further comprising a temperature sensor that measures a temperature of the measurement object.   The device evaluation apparatus according to claim 1, further comprising a current sensor for a measured object that measures a current supplied to the measured object.   The device evaluation apparatus according to claim 1, wherein the control unit is capable of controlling electric power supplied to the measurement object by PWM control or voltage control.   The device evaluation apparatus according to claim 1, wherein the control unit is capable of controlling electric power supplied to the heating member by PWM control or voltage control. Further comprising, device evaluation apparatus according to any one of claims 1 to 6 the electronic cooling element for a current sensor for measuring the current supplied to the electronic cooling element. Wherein the control unit, the electronic is the cooling power supplied to the device can be controlled by PWM control or voltage control, device evaluation apparatus according to any one of claims 1-7. A device evaluation method using the device evaluation apparatus according to any one of claims 1 to 8 ,
Holding the object to be measured by the holding member;
By driving the moving member and supplying the electric power to the heating member in a state in which the holding member is isolated from the cooling member, a heating step for increasing the temperature of the measured object and the moving member are driven. With the holding member in contact with the cooling member, by transferring the heat of the measured object to the cooling member, the cooling step of cooling the measured object is repeated one or more times. A test step of controlling the cooling member, the heating member, and the moving member by the control unit. The device evaluation method according to claim 9 , wherein PWM control or voltage control is used for controlling the heating member and the cooling member by the control unit.

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