JP5764347B2 - Intermittent test equipment - Google Patents

Description

The present invention relates to intermittent electrical test device.

  A heat-generating electronic device (semiconductor element) such as a power transistor may increase in temperature due to thermal resistance and power loss when energized and deteriorate. For this reason, an intermittent energization test (intermittent load operation life test) called a so-called power cycle test is performed as a reliability test of the heat generating electronic device. This test intermittently energizes the heat-generating electronic device, and evaluates the resistance to deterioration of the heat-generating electronic device from the temperature change caused by repeated ON / OFF operations.

  Here, the intermittent energization test apparatus has a heat radiating member (cooling body) in order to prevent the temperature of the heat generating electronic device from exceeding a design value or to promote a temperature drop. And in the state which mounted the heat generating electronic device on this heat radiating member, electricity supply is intermittently performed to the heat generating electronic device, and the temperature of this heat generating electronic device is changed (for example, refer to patent documents 1).

Japanese Patent Laid-Open No. 11-148961

  However, in the above-described prior art, when the temperature of the heat generating electronic device is increased, the heat resistance of the heat generating electronic device itself and the heat dissipation capability of the heat dissipation member used are set so as to reach the temperature required for evaluation. It is necessary to energize the heat generating electronic device in consideration. That is, when performing the intermittent energization test, a large amount of electric power is required as compared with the case where the temperature of the heat generating electronic device alone is increased, and there is a problem that the power supply and the wire cost increase.

Accordingly, the present invention has been made in view of the above-described circumstances, and provides an intermittent energization test apparatus that can reduce power supply and wire cost and shorten the test cycle time.

In order to solve the above-described problem, an intermittent energization test apparatus according to the present invention intermittently energizes a heat-generating electronic device that generates heat when energized, and the heat generation from temperature transition due to repeated ON / OFF operations. in intermittent energization test device for evaluating the resistance of an electronic device, by contacting the heat-generating electronic device, a heat radiating member made of two members performing heat radiation of the heat generating electronic device, between two of the heat radiating member And a heat deformable member that moves at least a part of the heat dissipating member toward and away from the heat generating electronic device based on a heat generation state of the heat generating electronic device, and the heat deformable member is used for heating and cooling. It consists bimetal accordance with deformation, of the two of the heat radiating member, one of the heat radiating member is in contact with the heating device, the other of the heat radiating member Toward and spaced from the one of the heat radiating member and the by serial thermal deformation member, the two of the heat radiating member, while at least one, at a position corresponding to the thermal deformation member, can accommodate the thermal deformation member A concave portion is formed.

  The intermittent energization test apparatus according to the present invention is characterized in that grease is applied to a contact portion between the heat generating electronic device and the heat dissipation member.

In the intermittent energization test apparatus according to the present invention, the thermal deformation member is formed so that a cross-sectional shape along the approaching / separating direction is Z-shaped .

  ADVANTAGE OF THE INVENTION According to this invention, when it supplies with electricity to a heat generating electronic device and raises the temperature of this heat generating electronic device, a heat generating electronic device and a thermal radiation member can be spaced apart. For this reason, when raising the temperature of a heat-emitting electronic device, it is not necessary to consider the heat dissipation capability of a heat radiating member, and the temperature of a heat-generating electronic device can be raised efficiently. Therefore, it is possible to provide an intermittent energization test apparatus that suppresses the power supply and wire cost.

  On the other hand, when the temperature of the heat generating electronic device is lowered, the heat generating electronic device and the heat radiating member can be brought into contact with each other. That is, when the energization of the heat generating electronic device is interrupted and the temperature of the heat generating electronic device is lowered, the heat generating electronic device can be efficiently cooled using the heat dissipation member. For this reason, the cooling time of the heat generating electronic device can be shortened, and the test cycle time can be shortened.

It is a schematic block diagram of the intermittent electricity test apparatus in the 1st reference example of this invention. It is a schematic block diagram of the intermittent electricity test apparatus in the 1st reference example of this invention, Comprising: The state in which the bimetal is shrink-deforming is shown. It is a graph which shows the temperature change of the semiconductor package in the 1st reference example of this invention. It is a schematic diagram of the intermittent energizing test apparatus definitive to implementation embodiments of the present invention. It is a schematic block diagram of the intermittent electricity test apparatus in the 2nd reference example of this invention. It is a schematic block diagram of the intermittent electricity test apparatus in the 2nd reference example of this invention. It is a schematic block diagram of the intermittent electricity test apparatus in the 3rd reference example of this invention. It is a schematic block diagram of the intermittent electricity test apparatus in the 4th reference example of this invention.

(First Reference Example )
(Intermittent test equipment)
Next, a first reference example of the present invention will be described with reference to FIGS.
FIG. 1 is a schematic configuration diagram of an intermittent energization test apparatus.
As shown in FIG. 1, the intermittent energization test apparatus 1 includes a power source 3 that intermittently energizes the semiconductor package 2 and a heat radiation unit 4 that can fasten and fix the semiconductor package 2 using bolts (not shown). ing.

The heat dissipating unit 4 includes two heat dissipating plates 5 and 6 that can approach and separate from each other, and a plurality of (for example , two in the first reference example ) bimetals 7 that connect the two heat dissipating plates 5 and 6. Has been.
The two heat sinks 5 and 6 are formed in a plate shape by, for example, aluminum, and the semiconductor package 2 is fastened and fixed to one of the two heat sinks 5 and 6. Further, the mating surfaces 5a and 6a of the heat radiating plates 5 and 6 are formed flat, and the heat radiating grease 8 is applied to the mating surfaces 5a and 6a, respectively.

  The bimetal 7 is formed by bonding different kinds of metal plates having different coefficients of thermal expansion and having a substantially Z-shaped cross section, and is elastically deformed according to a temperature change. That is, the bimetal 7 expands and deforms when the temperature reaches a predetermined value or higher (for example, about 75 ° C. or higher), and contracts and deforms when the temperature falls below the predetermined value.

(Semiconductor package)
The semiconductor package 2 is obtained by mounting a substrate 10 on a plate-shaped heat sink 9 and further mounting a semiconductor chip 11 on the substrate 10 and sealing with a sealing resin 12. The semiconductor chip 11 is a semiconductor element such as a diode or a transistor, and is formed in a substantially rectangular shape in plan view. An electrode is provided on the upper surface of the electrode, and the electrode 13 and a lead 13 protruding outward from the sealing resin 12 are electrically connected via a connector 14. A harness 3 a extending from the power source 3 is connected to the lead 13.
The heat sink 9 is for efficiently transferring the heat generated in the semiconductor package 2 (semiconductor chip 11) to the heat radiating plate 5, and the heat radiating plate 5 with the heat sink 9 facing the heat radiating plate 5 side. The semiconductor package 2 is fixed to the substrate.

(Intermittent conduction test method and operation of intermittent conduction test equipment)
Next, an intermittent energization test method using the intermittent energization test apparatus 1 will be described with reference to FIGS.
FIG. 2 is a schematic configuration diagram of the intermittent energization test apparatus and shows a state where the bimetal is contracted and deformed.
Here, in the intermittent energization test method, an energized state in which current is supplied to the semiconductor package 2 and a non-energized state in which the supply of current to the semiconductor package 2 is stopped are set as one cycle, and this is performed, for example, up to 10,000 times. To do. Then, a desired temperature of the semiconductor package 2 in the energized state is set to about 110 ° C., for example.

  That is, in the intermittent energization test method, after a current is supplied to the semiconductor package 2 by the power source 3 (energized state), when the semiconductor package 2 reaches a desired temperature (for example, about 110 ° C.), the current to the semiconductor package 2 is measured. Stop supplying (non-energized state). Then, after the temperature of the semiconductor package 2 is cooled to a predetermined value (for example, about 25 ° C.), it is energized again and is repeated.

Next, the behavior of the intermittent energization test apparatus 1 in the intermittent energization test will be described.
As shown in FIG. 2, before supplying current to the semiconductor package 2, the semiconductor package 2 is cooled, and the bimetal 7 is in a contracted and deformed state. In a state where the bimetal 7 is contracted and deformed, the two heat sinks 5 and 6 are close to each other and overlapped. At this time, since the heat radiating grease 8 is applied to the mating surfaces 5a and 6a of the heat radiating plates 5 and 6, respectively, the closeness of the heat radiating plates 5 and 6 is increased. Good heat transfer.

  From this state, when a current is supplied to the semiconductor package 2 by the power supply 3, the semiconductor package 2 generates heat. Then, the temperature of the semiconductor package 2 is transmitted to the one heat sink 5 via the heat sink 9 and further transmitted to the bimetal 7. For example, the bimetal 7 is designed to stretch and deform when the temperature rises to about 75 ° C. or higher. For this reason, the two heat sinks 5 and 6 are separated from each other as shown in FIG.

If the heat radiating plates 5 and 6 are separated from each other, heat transfer between the heat radiating plates 5 and 6 is not performed. Decreasing the heat dissipation capability increases the temperature rise rate of the semiconductor package 2 attached to one of the heat sinks 5.
Thereafter, when the semiconductor package 2 reaches a desired temperature (for example, about 110 ° C.), the supply of current to the semiconductor package 2 is stopped. Then, the semiconductor package 2 is radiated through the heat sink 9 and the one heat radiating plate 5.

  Here, at the same time as the semiconductor package 2 is cooled, the bimetal 7 is also cooled. When the bimetal 7 is cooled and falls below a predetermined temperature (for example, about 75 ° C.), the bimetal 7 contracts and deforms again. As a result, as shown in FIG. 2, the two heat dissipating plates 5 and 6 approach each other and overlap each other, increasing the heat dissipating area for the semiconductor chip 11. For this reason, cooling of the semiconductor package 2 is promoted.

(effect)
Therefore, according to the first reference example described above, the heat radiating unit 4 for cooling the semiconductor package 2 is connected to the two heat radiating plates 5 and 6 that can approach and separate from each other and the two heat radiating plates 5 and 6. a plurality of (for example, the in the first reference example 2) constituted by a bimetal 7, when heating the semiconductor package 2 to the energized state, to separate the two heat radiating plates 5 and 6, the heat radiation of the heat radiating unit 4 It is possible to promote the heat generation of the semiconductor package 2 by reducing the capability. For this reason, the temperature of the semiconductor package 2 can be raised efficiently, and the intermittent energization test apparatus 1 that suppresses the cost of the power supply 3 and the cost of the wire 3 such as the harness 3a extending from the power supply 3 and the leads 13 is provided. It becomes possible.

  On the other hand, when the semiconductor package 2 is cooled in a non-energized state, the two heat sinks 5 and 6 can be overlapped to enhance the heat dissipating capability of the heat dissipating unit 4 and promote the cooling of the semiconductor package 2. For this reason, the temperature of the semiconductor package 2 can be lowered efficiently. Therefore, the cooling time of the semiconductor package 2 can be shortened, and the time of the intermittent energization test cycle can be shortened.

This will be described in more detail with reference to FIG.
FIG. 3 is a graph comparing the temperature change of the semiconductor package between the conventional example and the first reference example , where the vertical axis represents the temperature (Tj) of the semiconductor package 2 and the horizontal axis represents time.
Here, the broken lines in FIG. 3 indicate the case where the semiconductor package 2 is energized and de-energized without attaching a heat radiating member such as a heat radiating plate (hereinafter referred to as “when the heat radiating plate is not used”).
Also, in FIG. 3, a two-dot chain line indicates that two heat sinks 5 and 6 are stacked on each other without the bimetal 7 attached to the semiconductor package 2, and the semiconductor package 2 is turned on and off. (Hereinafter referred to as “when bimetal is not used”).

  As shown in the figure, it is confirmed that when the heat sink is not used, the semiconductor package 2 has only a heat dissipation capability, so that when the current is supplied to the semiconductor package 2, the temperature of the semiconductor package 2 quickly rises. it can. After the temperature of the semiconductor package 2 reaches a desired temperature (for example, about 110 ° C. or more) and the supply of current to the semiconductor package 2 is stopped, the heat dissipation capacity is low because the heat dissipation plate is not attached. It can be confirmed that it takes time to cool the semiconductor package 2 to a predetermined temperature (for example, about 25 ° C.).

  Further, when the bimetal is not used, it is possible to quickly confirm that the semiconductor package 2 is cooled because the heat dissipation capability of the two heat dissipation plates 5 and 6 is high. However, it can be confirmed that it is difficult to raise the semiconductor package 2 to a desired temperature in the energized state because the heat dissipation capability of the two heat sinks 5 and 6 is high.

On the other hand, in the first reference example , when the current starts to be supplied to the semiconductor package 2, the temperature rise of the semiconductor package 2 follows almost the same transition as when the bimetal is not used. When the temperature rises to a temperature or higher (for example, 75 ° C. or higher), the heat radiating unit 4 is reduced due to expansion and deformation, and the two heat radiating plates 5 and 6 are separated.
For this reason, when the temperature of the semiconductor package 2 reaches a predetermined value or higher (for example, 75 ° C. or higher), it can be confirmed that the temperature rise of the semiconductor package 2 is promoted thereafter as compared with the case where the bimetal is not used (FIG. (See SO1 in 3). Therefore, it is not necessary to set the size of the power source 3 to be larger than necessary, and it is not necessary to increase the wire diameter of the wire material such as the harness 3a and the lead 13 extending from the power source 3.

  Further, when the supply of current to the semiconductor package 2 is stopped and the heat dissipation of the semiconductor package 2 is started, the two heat sinks 5 and 6 remain separated from each other. The transition is almost the same as when the board is not used. However, when the bimetal 7 is cooled and falls below a predetermined temperature (for example, about 75 ° C.), the bimetal 7 contracts and deforms again, and the heat dissipation capability of the heat dissipation unit 4 increases. Then, cooling of the semiconductor package 2 is promoted (see SO2 in FIG. 3). For this reason, the cooling time of the semiconductor package 2 can be shortened compared with the case where a heat sink is not used as a result.

(Embodiment)
In the first reference example described above, the case where the mating surfaces 5a and 6a of the two heat radiating plates 5 and 6 constituting the heat radiating unit 4 are formed flat has been described. However, the present invention is not limited to this. For example, as shown in FIG. 4, the bimetal 7 can be stored in a location corresponding to the bimetal 7 of the other heat sink 6 among the two heat sinks 5 and 6. The recess 15 may be formed. By forming the recess 15, it is possible to increase the closeness of the two heat sinks 5 and 6 when the bimetal 7 contracts and deforms.

(Second reference example )
Next, a second reference example of the present invention will be described with reference to FIGS. In addition, the same code | symbol is attached | subjected and demonstrated to the same aspect as a 1st reference example .
5 and 6 are schematic configuration diagrams of the intermittent energization testing apparatus in the second reference example .
As shown in FIGS. 5 and 6, the difference from the intermittent energizing test apparatus 1 of the second first reference example intermittent current test device 21 of the aforementioned reference example, intermittent electrical test of a first reference example of the aforementioned The configuration of the heat dissipation unit 4 of the apparatus 1 is different from that of the heat dissipation unit 24 of the intermittent energization test apparatus 21 of the second reference example (the same applies to the following reference examples ).

That is, the heat radiating unit 24 includes a heat radiating plate 25 and a flat bimetal 27 provided on the heat radiating plate 25, and the semiconductor package 2 is attached on the bimetal 27. The heat radiating plate 25 is formed in a plate shape by, for example, aluminum.
As shown in FIG. 5, the bimetal 27 is curved and deformed so that most of the central portion swells when the temperature reaches a predetermined value or higher (for example, about 75 ° C. or higher). When the temperature falls below a predetermined value, it deforms so as to become flat.

  Under such a configuration, when a current is supplied to the semiconductor package 2 by the power supply 3, the semiconductor package 2 generates heat, and this heat is transmitted to the bimetal 27. When the temperature of the bimetal 27 rises to a predetermined value (for example, about 75 ° C.) or more, the bimetal 27 is curved and deformed. Then, as shown in FIG. 5, the semiconductor package 2 is separated from the heat sink 25.

On the other hand, when the semiconductor package 2 reaches a desired temperature (for example, about 110 ° C.), supply of current to the semiconductor package 2 is stopped and heat dissipation of the semiconductor package 2 is started. At this time, since the bimetal 27 is also radiated, when the temperature of the bimetal 27 falls below a predetermined value (for example, about 75 ° C.), the bimetal 27 is deformed so as to become flat again (see FIG. 6).
Here, when the bimetal 27 is deformed flat, the contact area between the bimetal 27 and the semiconductor package 2 increases, and the contact area between the bimetal 27 and the heat sink 25 increases. For this reason, the heat of the semiconductor package 2 is efficiently transmitted to the heat sink 25 through the bimetal 27.

  It is desirable to apply heat-dissipating grease (not shown) to the contact surfaces 2a and 27a between the semiconductor package 2 and the bimetal 27 and the contact surfaces 27b and 25a between the bimetal 27 and the heat sink 25, respectively. With this configuration, heat transfer from the semiconductor package 2 to the bimetal 27 and heat transfer from the bimetal 27 to the heat sink 25 can be efficiently performed.

Therefore, according to the second reference example described above, the same effects as those of the first reference example described above can be achieved. Further, the structure of the intermittent energization test apparatus 21 can be further simplified as compared with the intermittent energization test apparatus 1 of the first reference example described above. For this reason, it becomes possible to reduce the manufacturing cost of an apparatus.

In the first reference example described above, the bimetal 7 is used to bring the two heat sinks 5 and 6 closer to and away from each other. In the second reference example , the semiconductor package 2 and the heat sink 25 are brought closer to and away from each other. The case where the bimetal 27 is used has been described. However, the present invention is not limited to this, and a material that deforms according to temperature may be employed. For example, a shape memory alloy may be used in place of the bimetals 7 and 27.

(Third reference example )
Next, a third reference example of the present invention will be described with reference to FIG.
FIG. 7 is a schematic configuration diagram of the intermittent energization test apparatus in the third reference example .
As shown in the figure, the heat radiating unit 34 of the intermittent energization test apparatus 31 includes two heat radiating plates 5 and 6 that can approach and separate from each other, a drive unit 45 that connects the two heat radiating plates 5 and 6, and a semiconductor. A temperature sensor 46 that detects the temperature of the package 2 and a control unit 47 that performs drive control of the drive unit 45 based on the detection result of the temperature sensor 46 are provided.

The semiconductor package 2 is fastened and fixed to one of the two heat sinks 5 and 6. Further, the mating surfaces 5a and 6a of the heat radiating plates 5 and 6 are formed flat, and the heat radiating grease 8 is applied to the mating surfaces 5a and 6a, respectively.
The drive unit 45 includes an actuator (not shown), and when the actuator operates, the two heat radiating plates 5 and 6 approach each other and are separated from each other.

The temperature sensor 46 outputs the detected temperature of the semiconductor package 2 to the control unit 47 as a signal.
The control unit 47 includes an input unit 48 to which an output signal from the temperature sensor 46 is input, a storage unit 49 in which a threshold temperature T is stored in advance, and a threshold temperature T stored in the storage unit 49 and the input unit 48. A comparison unit 50 that compares the temperature of the input semiconductor package 2 and an output unit 51 that outputs a control signal to the drive unit 45 based on the comparison result of the comparison unit 50 are provided.

  Here, the threshold temperature T stored in the storage unit 49 is set to about 75 ° C., for example. When the temperature of the semiconductor package 2 input to the input unit 48 is equal to or higher than the threshold temperature T, a control signal for separating the two heat sinks 5 and 6 is output from the output unit 51 to the drive unit 45. Yes. On the other hand, when the temperature of the semiconductor package 2 input to the input unit 48 is lower than the threshold temperature T, a control signal for causing the two heat sinks 5 and 6 to approach the output unit 51 from the output unit 51 is output. Yes.

The operation of the intermittent energization test apparatus 31 will be described in more detail.
Here, first, before the current is supplied to the semiconductor package 2 by the power supply 3, the semiconductor package 2 is cooled, and the two heat radiation plates 5 and 6 approach the drive unit 45 from the output unit 51 of the control unit 47. As a result, a control signal is output. And it will be in the state where the two heat sinks 5 and 6 approached each other and were piled up.

  From this state, when a current is supplied to the semiconductor package 2 by the power supply 3, the semiconductor package 2 generates heat. When the comparison unit 50 determines that the temperature of the semiconductor package 2 has reached or exceeded the threshold temperature T of the storage unit 49, the control for separating the two radiator plates 5 and 6 from the output unit 51 to the drive unit 45. A signal is output. And the two heat sinks 5 and 6 are spaced apart from each other.

  Thereafter, when the semiconductor package 2 reaches a desired temperature (for example, about 110 ° C.), supply of current to the semiconductor package 2 is stopped and heat dissipation of the semiconductor package 2 is started. Then, when the semiconductor package 2 is cooled and the comparison unit 50 determines that the temperature of the semiconductor package 2 is lower than the threshold temperature T of the storage unit 49, the two heat radiation plates 5 are again sent from the output unit 51 to the drive unit 45. , 6 are output so as to approach each other. Then, the two heat radiating plates 5 and 6 approach each other and overlap each other, the heat radiating area with respect to the semiconductor chip 11 is increased, and the cooling of the semiconductor chip 11 is promoted.

Therefore, according to the third reference example described above, the same effects as those of the first reference example described above can be achieved. In addition, the intermittent energization test apparatus 31 is provided with a drive unit 45 that brings the two heat sinks 5 and 6 closer to and away from each other, and a control unit 47 that controls the drive of the drive unit 45 based on the detection result of the temperature sensor 46. This makes it possible to easily change the set temperature of the semiconductor chip 11 for determining the timing at which the two heat radiating plates 5 and 6 are approached and separated. For this reason, it is possible to finely control the time required to heat the semiconductor chip 11 and the time required to dissipate heat, and further reduce the time of the intermittent energization test cycle.

In the third reference example described above, the threshold temperature T is stored in advance in the storage unit 49 of the control unit 47. When the temperature of the semiconductor package 2 detected by the temperature sensor 46 becomes equal to or higher than the threshold temperature T, two threshold temperatures T are stored. While the radiator plates 5 and 6 are separated from each other, the case where the two radiator plates 5 and 6 approach each other when the temperature falls below the threshold temperature T has been described. However, the present invention is not limited to this, and the storage unit 49 is provided with a first threshold temperature T1 that causes the two heat sinks 5 and 6 to approach each other and a second threshold temperature T2 that separates the two heat sinks 5 and 6. You may set each separately (refer the dashed-two dotted line in FIG. 7).

  With this configuration, it is possible to more precisely control the time required to heat the semiconductor chip 11 and the time required to dissipate heat, and further reduce the time of the intermittent energization test cycle. Become.

For example, when the first threshold temperature T1 is set lower than the second threshold temperature T2, the timing at which the two heat sinks 5 and 6 are separated during the energization state in which current is supplied to the semiconductor package 2 in the intermittent energization test is as described above. Compared to the timing of the third reference example , it becomes faster. For this reason, the heat generation of the semiconductor chip 11 is further promoted, and the time for raising the semiconductor chip 11 to a desired temperature can be shortened.
On the other hand, since the second threshold temperature T2 is set to be higher than the first threshold temperature T1, in the non-energized state in which the supply of current to the semiconductor package 2 is stopped, the timing at which the two heat sinks 5 and 6 are brought closer to each other. Is faster than the timing of the third reference example described above. For this reason, the heat dissipation of the semiconductor chip 11 is promoted, and the heat dissipation time of the semiconductor chip 11 can be further shortened.

(4th reference example )
Next, a fourth reference example of the present invention will be described with reference to FIG.
FIG. 8 is a schematic configuration diagram of the intermittent energization test apparatus in the fourth reference example .
As shown in the figure, the fourth difference between the intermittent current test device 61 of Example intermittent current test device 31 of the third reference example described above, intermittent electrical test apparatus 31 of the third reference example is a semiconductor package While the two heat sinks 5 and 6 are moved closer to and away from each other based on the temperature of 2, the intermittent energization test device 61 of the fourth reference example has two heat sinks 5 and 5 based on the energization state to the semiconductor package 2. 6 is to approach and separate 6.

That is, the heat radiating unit 64 of the intermittent energization test apparatus 61 includes two heat radiating plates 5 and 6 that can approach and separate from each other, a drive unit 45 that connects the two heat radiating plates 5 and 6, and the on / off of the power source 3. And a control unit 67 that controls the drive of the drive unit 45 based on the detection result of the energization detection sensor 66.
The energization detection sensor 66 is attached to the power source 3, for example, and after detecting the on / off state of the power source 3, the detection result is output to the control unit 67 as a signal.

  The control unit 67 includes an input unit 48 to which an output signal from the energization detection sensor 66 is input, and an output unit 69 that outputs a drive signal to the drive unit 45 based on the signal input to the input unit 48. ing. The output unit 69 outputs a control signal for separating the two heat sinks 5 and 6 to the drive unit 45 when the power supply 3 is on. Further, when the power source 3 is off, a control signal for causing the two heat sinks 5 and 6 to approach each other is output.

Therefore, according to the above-described fourth reference example , the same effects as in the above-described first reference example can be achieved.
In addition, since the two heat sinks 5 and 6 are moved closer to and away from each other when the power source 3 is turned on and off, when the temperature of the semiconductor package 2 is raised in the energized state in the intermittent energization test, the heat is radiated from the start of the energized state. The heat dissipation capability of the unit 64 can be reduced. On the other hand, when the semiconductor package 2 is cooled in the non-energized state, the heat radiation capability of the heat radiation unit 64 can be increased from the start of the non-energized state.
For this reason, since the temperature of the semiconductor package 2 can be quickly raised or lowered quickly, it is possible to further shorten the time of the intermittent energization test cycle.

In the third reference example and the fourth reference example described above, the case where the drive unit 45 is provided between the two heat sinks 5 and 6 and the two heat sinks 5 and 6 are approached and separated has been described. However, the present invention is not limited to this, and a drive unit 45 is provided between the heat sink 5 of the integrated heat sinks 5 and 6 and the semiconductor package 2 so that the heat sink 5 and the semiconductor package 2 are brought closer to each other. You may comprise so that it may space apart. In this case, the semiconductor package 2 and the heat radiating plate 5 are configured to contact each other with the semiconductor package 2 approaching the heat radiating plate 5.
For example, the intermittent energization test apparatus 31 of the third reference example or the intermittent energization test apparatus 61 of the fourth reference example may be employed in the second reference example described above. That is, instead of the bimetal 27 of the second reference example shown in FIGS. 5 and 6, the drive unit 45 may be provided.

The present invention is not limited to the above-described embodiment, and includes various modifications made to the above-described embodiment without departing from the spirit of the present invention.
For example, in the above-described embodiment, the module under test for testing by the intermittent energization test apparatus 1, 21, 31, 61 is the semiconductor package 2, and the semiconductor package 2 has the substrate 10 mounted on the heat sink 9. Further, the case where the semiconductor chip 11 mounted on the substrate 10 is sealed with the sealing resin 12 has been described. However, the present invention is not limited to this, and the module under test may be any electronic device that generates heat when energized.

  Furthermore, in the above-mentioned embodiment, the case where the heat sinks 5, 6 and 25 are formed in a plate shape by aluminum, for example, has been described. However, the present invention is not limited to this, and the heat radiating plates 5, 6, and 25 may be formed of members that can radiate the heat generated by the semiconductor package 2. For example, the heat sinks 5, 6 and 25 may be formed of copper or the like instead of aluminum.

1, 21, 31, 61 Intermittent test device 2 Semiconductor package 2a, 25a, 27a, 27b Contact surface (contact part)
3 Power supply 4, 24, 34, 64 Heat radiation unit 5, 6, 25 Heat radiation plate (heat radiation member)
5a, 6a Mating surface (contact part)
7,27 Bimetal 8 Thermal grease (grease)
45 Drive unit 46 Temperature sensor (detection unit)
47 control unit 48, 68 input unit 49 storage unit 50 comparison unit 51, 69 output unit 66 energization detection sensor T threshold temperature T1 first threshold temperature (first temperature)
t2 Second threshold temperature (second temperature)

Claims (3)

In an intermittent energization test apparatus for intermittently energizing a heat generating electronic device that generates heat by being energized, and evaluating the resistance of the heat generating electronic device from a temperature change due to repeated on / off operation thereof,
A heat dissipating member consisting of two members that dissipate heat of the heat generating electronic device by contacting the heat generating electronic device;
A heat-deformable member that is disposed between the two heat-dissipating members , and that causes at least a part of the heat-dissipating member to approach or separate from the heat-generating electronic device based on the heat generation state of the heat-generating electronic device,
The thermally deformable member is made of a bimetal that deforms in response to heating and cooling,
Of the two heat dissipating members, one heat dissipating member contacts the heat generating device, and the other heat dissipating member approaches / separates the one heat dissipating member by the thermal deformation member,
An intermittent energization test apparatus characterized in that at least one of the two heat dissipating members has a recess capable of accommodating the heat deforming member at a location corresponding to the heat deforming member.   The intermittent energization test apparatus according to claim 1, wherein grease is applied to a contact portion between the heat generating electronic device and the heat dissipation member.   The intermittent energization test apparatus according to claim 1 or 2, wherein the thermal deformation member is formed so that a cross-sectional shape along the approaching / separating direction is Z-shaped.

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