JP4889045B2 - Catalyst for electroless plating on printed wiring board having through hole, and printed wiring board having through hole processed using the catalyst - Google Patents
Catalyst for electroless plating on printed wiring board having through hole, and printed wiring board having through hole processed using the catalyst Download PDFInfo
- Publication number
- JP4889045B2 JP4889045B2 JP2007535424A JP2007535424A JP4889045B2 JP 4889045 B2 JP4889045 B2 JP 4889045B2 JP 2007535424 A JP2007535424 A JP 2007535424A JP 2007535424 A JP2007535424 A JP 2007535424A JP 4889045 B2 JP4889045 B2 JP 4889045B2
- Authority
- JP
- Japan
- Prior art keywords
- catalyst
- hole
- compound
- electroless plating
- printed wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 239000003054 catalyst Substances 0.000 title claims description 41
- 238000007772 electroless plating Methods 0.000 title claims description 29
- 229910000510 noble metal Inorganic materials 0.000 claims description 34
- 150000001875 compounds Chemical class 0.000 claims description 21
- -1 amine compound Chemical class 0.000 claims description 19
- 125000000524 functional group Chemical group 0.000 claims description 17
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 11
- 150000002736 metal compounds Chemical class 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 150000002941 palladium compounds Chemical class 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 3
- 150000003536 tetrazoles Chemical class 0.000 claims description 3
- 229940126062 Compound A Drugs 0.000 claims 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 238000007747 plating Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 5
- 229910002855 Sn-Pd Inorganic materials 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000012190 activator Substances 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- KRAHLZAGPKKBSW-UHFFFAOYSA-N tetrasodium;dioxidophosphanyl phosphite Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])OP([O-])[O-] KRAHLZAGPKKBSW-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ODIRBFFBCSTPTO-UHFFFAOYSA-N 1,3-selenazole Chemical compound C1=C[se]C=N1 ODIRBFFBCSTPTO-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 1H-imidazole silane Chemical compound [SiH4].N1C=NC=C1 ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 0.000 description 1
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- DLLMWYLJLBBEBF-UHFFFAOYSA-N [SiH3]N.CCO[Si](OCC)(OCC)CCCN Chemical compound [SiH3]N.CCO[Si](OCC)(OCC)CCCN DLLMWYLJLBBEBF-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 239000002635 aromatic organic solvent Substances 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical compound NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical compound C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- CQDAMYNQINDRQC-UHFFFAOYSA-N oxatriazole Chemical compound C1=NN=NO1 CQDAMYNQINDRQC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 150000003455 sulfinic acids Chemical class 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- YGNGABUJMXJPIJ-UHFFFAOYSA-N thiatriazole Chemical compound C1=NN=NS1 YGNGABUJMXJPIJ-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
- B01J31/12—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing organo-metallic compounds or metal hydrides
- B01J31/123—Organometallic polymers, e.g. comprising C-Si bonds in the main chain or in subunits grafted to the main chain
- B01J31/124—Silicones or siloxanes or comprising such units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/16—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes
- B01J31/18—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes containing nitrogen, phosphorus, arsenic or antimony as complexing atoms, e.g. in pyridine ligands, or in resonance therewith, e.g. in isocyanide ligands C=N-R or as complexed central atoms
- B01J31/1805—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes containing nitrogen, phosphorus, arsenic or antimony as complexing atoms, e.g. in pyridine ligands, or in resonance therewith, e.g. in isocyanide ligands C=N-R or as complexed central atoms the ligands containing nitrogen
- B01J31/181—Cyclic ligands, including e.g. non-condensed polycyclic ligands, comprising at least one complexing nitrogen atom as ring member, e.g. pyridine
- B01J31/1815—Cyclic ligands, including e.g. non-condensed polycyclic ligands, comprising at least one complexing nitrogen atom as ring member, e.g. pyridine with more than one complexing nitrogen atom, e.g. bipyridyl, 2-aminopyridine
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2531/00—Additional information regarding catalytic systems classified in B01J31/00
- B01J2531/80—Complexes comprising metals of Group VIII as the central metal
- B01J2531/82—Metals of the platinum group
- B01J2531/824—Palladium
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0716—Metallic plating catalysts, e.g. for direct electroplating of through holes; Sensitising or activating metallic plating catalysts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Catalysts (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Description
本発明は、スルーホールを有するプリント配線基板に用いられる無電解めっき用触媒、およびその触媒を用いて処理されたスルーホールを有するプリント配線基板に関する。 The present invention relates to a catalyst for electroless plating used in a printed wiring board having a through hole, and a printed wiring board having a through hole processed using the catalyst.
プリント配線基板の基材に、銅、ニッケル等の無電解めっきを施し、金属層を形成する際に、基材にめっき層を均一に形成させるために、無電解めっきを施す前に、基材の表面にパラジウム等の触媒を付与する前処理方法が知られている。例えば、Ｓｎ−Ｐｄコロイド溶液中に基材を浸漬させる方法、蒸着またはスパッタリングで触媒を添着させる方法等が用いられている。接続用のスルーホールを有するプリント配線基板においても、スルーホールを形成した後、同様に前処理し、無電解めっきにより、金属層を形成することが知られている（特許文献１、特許文献２参照）。 When performing electroless plating such as copper and nickel on the base material of the printed wiring board and forming a metal layer, the base material is applied before electroless plating to form a uniform plating layer on the base material. There is known a pretreatment method for imparting a catalyst such as palladium to the surface. For example, a method of immersing a substrate in a Sn—Pd colloid solution, a method of attaching a catalyst by vapor deposition or sputtering, and the like are used. Also in a printed wiring board having a through hole for connection, it is known that after forming a through hole, pretreatment is performed in the same manner, and a metal layer is formed by electroless plating (Patent Documents 1 and 2). reference).
近年、電子機器の小型化、軽量化、高速化の要求に対応して、プリント配線基板の高密度化が進んでいる。プリント配線基板の高密度化に伴い、スルーホールを有するプリント配線基板においては、スルーホールの直径が従来の２００μｍ超から細径化し、２００μｍ以下となっている。スルーホールを有するプリント配線基板においては、スルーホール側壁にもめっき層が均一に形成されることが望まれるが、スルーホールの細径化により、無電解めっきを行った際に、スルーホールの側壁にボイド（微小無めっき部分）が発生することが問題になっている。これは、上記前処理で触媒を付与する際に、細径化したスルーホールの側壁に触媒が均一に付与されなかったため生じたものと考えられる。 In recent years, printed circuit boards have been increased in density in response to demands for smaller, lighter, and faster electronic devices. With the increase in the density of printed wiring boards, in the printed wiring board having through holes, the diameter of the through holes has been reduced from the conventional over 200 μm to 200 μm or less. In a printed wiring board having a through hole, it is desirable that a plating layer be uniformly formed on the side wall of the through hole. However, when the electroless plating is performed by reducing the diameter of the through hole, the side wall of the through hole is desired. It is a problem that voids (micro unplated portions) are generated in the surface. This is considered to have occurred because the catalyst was not uniformly applied to the side wall of the narrowed through hole when the catalyst was applied in the pretreatment.
触媒を付与する方法として、上記Ｓｎ−Ｐｄコロイド溶液中に基材を浸漬させる方法においては、直径が２００μｍ以下のスルーホールを有するプリント配線基板では、Ｓｎ−Ｐｄコロイドは大きい（粒径０.１〜１.０μｍ）ため、微小部分へ回り込みにくく、スルーホール側壁においては、触媒がまばらについてボイド発生しやすい。また、Ｓｎ−Ｐｄコロイドを用いためっきプロセスは、触媒付与工程＋めっき工程を複数行うことでボイド発生を防いでいるので、工程が複雑になり、コストもかかる。また、蒸着やスパッタリング法では、スルーホール側壁に均一に触媒を付与することは難しく、コストもかかる。
本発明は、プリント配線基板の高密度化により、直径が２００μｍ以下であるスルーホールを有するプリント配線基板においても、スルーホール側壁にボイド発生がなく、均一に無電解めっきが可能な無電解めっき用触媒を提供することを目的とする。 The present invention is for electroless plating capable of uniform electroless plating without causing voids on the side wall of the through hole even in a printed wiring board having a through hole having a diameter of 200 μm or less by increasing the density of the printed wiring board. An object is to provide a catalyst.
本発明者等は、上記課題について鋭意検討を行った結果、分子内に貴金属を捕捉しえる官能基を有する化合物と貴金属化合物とを含有する触媒を用いて基材に触媒を付着させ、無電解めっきを行うことにより、直径が２００μｍ以下のスルーホールを有するプリント配線基板においても、スルーホールの側壁にボイド発生がなく、均一にめっきされることを見出した。 As a result of intensive studies on the above problems, the present inventors attached a catalyst to a substrate using a catalyst containing a compound having a functional group capable of capturing a noble metal in the molecule and a noble metal compound, It has been found that by plating, even in a printed wiring board having a through hole having a diameter of 200 μm or less, the side wall of the through hole has no voids and is uniformly plated.
即ち、本発明は以下のとおりである。
（１）直径２００μｍ以下の微細スルーホールを有するプリント配線基板の無電解めっきに用いる無電解めっき用触媒を含む溶液であって、該触媒が分子内に貴金属を捕捉しえる官能基を有するシランカップリング剤化合物と貴金属化合物とからなることを特徴とする前記無電解めっき用触媒を含む溶液。
（２）前記分子内に貴金属を捕捉しえる官能基を有するシランカップリング剤化合物が、アゾール系またはアミン化合物とエポキシシラン系化合物との反応により得られることを特徴とする前記（１）記載の無電解めっき用触媒を含む溶液。
（３）前記分子内に貴金属を捕捉しえる官能基を有するシランカップリング剤化合物が、アミノ基を有するシランカップリング剤であることを特徴とする前記（１）記載の無電解めっき用触媒を含む溶液。
（４）前記貴金属化合物がパラジウム化合物であることを特徴とする前記（１）〜（３）のいずれか一項に記載の無電解めっき用触媒を含む溶液。
That is, the present invention is as follows.
(1) A silane cup containing a catalyst for electroless plating used for electroless plating of a printed wiring board having a fine through-hole having a diameter of 200 μm or less, the catalyst having a functional group capable of capturing a noble metal in the molecule A solution containing a catalyst for electroless plating, which comprises a ring agent compound and a noble metal compound.
(2) a silane coupling agent compound having a functional group which can capture a noble metal in the molecule, said characterized in that it is obtained by a reaction between A tetrazole-based or amine compound with an epoxysilane compound (1) wherein A solution containing a catalyst for electroless plating.
(3) The electroless plating catalyst according to (1), wherein the silane coupling agent compound having a functional group capable of capturing a noble metal in the molecule is a silane coupling agent having an amino group. Containing solution.
(4) The solution containing the electroless plating catalyst according to any one of (1) to (3), wherein the noble metal compound is a palladium compound.
本発明の無電解めっき用触媒を用いて処理された後、無電解めっきされたスルーホールを有するプリント基板は、スルーホールの直径が２００μｍ以下であっても、スルーホールの側壁にも均一にめっきされ、ボイド発生がない。したがって、工程が簡略化でき、歩留まりを向上することができる。 After the treatment with the electroless plating catalyst of the present invention, the printed circuit board having the electroless plated through hole is uniformly plated on the side wall of the through hole even if the through hole has a diameter of 200 μm or less. There is no void generation. Therefore, the process can be simplified and the yield can be improved.
本発明は、スルーホールを有するプリント配線基板に用いる無電解めっき用触媒であって、分子内に貴金属を捕捉しえる官能基を有する化合物と貴金属化合物を含むことを特徴とする。 The present invention is a catalyst for electroless plating used for a printed wiring board having a through hole, and includes a compound having a functional group capable of capturing a noble metal in a molecule and a noble metal compound.
分子内に貴金属を捕捉しえる官能基を有する化合物と貴金属化合物を含む触媒により、被めっき面に対して分子内に貴金属を捕捉しえる官能基を有する化合物を介して貴金属触媒をより均一に、より確実に固着することができる。また、この触媒は分子サイズが小さいため、容易に細径スルーホール内へ回り、スルーホール側壁においても均一に、より確実に固着することができる。そのため、この触媒付着後に無電解めっきをするとボイド発生がなく、均一にめっきすることができる。 With a compound having a functional group capable of capturing a noble metal in the molecule and a catalyst containing the noble metal compound, the noble metal catalyst can be more uniformly distributed through the compound having a functional group capable of capturing the noble metal in the molecule with respect to the surface to be plated. It can be more securely fixed. In addition, since the catalyst has a small molecular size, it can easily go into the small-diameter through-hole, and can be fixed evenly and reliably on the side wall of the through-hole. Therefore, when electroless plating is performed after the catalyst is adhered, voids are not generated and uniform plating can be performed.
前記分子内に貴金属を捕捉しえる官能基を有する化合物として好ましいものは、シランカップリング剤であり、アゾール系化合物またはアミン化合物とエポキシ系化合物との反応により得られるものが挙げられる。
アゾール系化合物としては、イミダゾール、オキサゾール、チアゾール、セレナゾール、ピラゾール、イソオキサゾール、イソチアゾール、トリアゾール、オキサジアゾール、チアジアゾール、テトラゾール、オキサトリアゾール、チアトリアゾール、ベンダゾール、インダゾール、ベンズイミダゾール、ベンゾトリアゾールなどが挙げられる。これらに制限されるものではないが、イミダゾールが特に好ましい。A preferable compound having a functional group capable of capturing a noble metal in the molecule is a silane coupling agent, and examples thereof include those obtained by a reaction between an azole compound or an amine compound and an epoxy compound.
Examples of azole compounds include imidazole, oxazole, thiazole, selenazole, pyrazole, isoxazole, isothiazole, triazole, oxadiazole, thiadiazole, tetrazole, oxatriazole, thiatriazole, benzazole, indazole, benzimidazole, and benzotriazole. It is done. Although not limited thereto, imidazole is particularly preferable.
また、アミン化合物としては、例えばプロピルアミン等の飽和炭化水素アミン、ビニルアミン等の不飽和炭化水素アミン、フェニルアミン等の芳香族アミン等を挙げることができる。 Examples of the amine compound include saturated hydrocarbon amines such as propylamine, unsaturated hydrocarbon amines such as vinylamine, and aromatic amines such as phenylamine.
また前記シランカップリング剤とは、前記アゾール系化合物またはアミン化合物由来の貴金属捕捉基の他に、−ＳｉＸ１Ｘ２Ｘ３基を有する化合物であり、Ｘ１、Ｘ２、Ｘ３はアルキル基、ハロゲンやアルコキシ基などを意味し、被めっき物への固定が可能な官能基であれば良い。Ｘ１、Ｘ２、Ｘ３は同一でもまた異なっていても良い。Also, the a silane coupling agent, in addition to the noble metal capture group derived from the azole compound or amine compound is a compound having a -SiX 1 X 2 X 3 group, X 1, X 2, X 3 is an alkyl group It means a halogen, an alkoxy group or the like, and any functional group that can be fixed to an object to be plated. X 1 , X 2 and X 3 may be the same or different.
前記シランカップリング剤は、前記アゾール系化合物またはアミン化合物とエポキシシラン化合物を反応させることにより得ることができる。
このようなエポキシシラン化合物としては、
で示されるエポキシカップリング剤が好ましい。The silane coupling agent can be obtained by reacting the azole compound or amine compound with an epoxy silane compound.
As such an epoxy silane compound,
The epoxy coupling agent shown by these is preferable.
前記アゾール系化合物と前記エポキシ基含有シラン化合物との反応は、例えば特開平６−２５６３５８号公報に記載されている条件で行うことができる。
例えば、８０〜２００℃でアゾール系化合物１モルに対して０．１〜１０モルのエポキシ基含有シラン化合物を滴下して５分〜２時間反応させることにより得ることができる。その際、溶媒は特に不要であるが、クロロホルム、ジオキサン、メタノール、エタノール等の有機溶媒を用いてもよい。The reaction between the azole compound and the epoxy group-containing silane compound can be performed under the conditions described in, for example, JP-A-6-256358.
For example, it can be obtained by dropping 0.1 to 10 moles of an epoxy group-containing silane compound at 80 to 200 ° C. with respect to 1 mole of an azole compound and reacting them for 5 minutes to 2 hours. At that time, a solvent is not particularly required, but an organic solvent such as chloroform, dioxane, methanol, ethanol or the like may be used.
特に好ましい例としてイミダゾール化合物とエポキシシラン系化合物の反応を下記に示す。
本発明に使用する分子内に貴金属を捕捉しえる官能基を有する化合物のその他の例としては、例えば貴金属を捕捉しえる官能基として、アミノ基、メルカプト基等を有するシランカップリング剤である、γ−アミノプロピルトリメトキシシラン、γ−アミノプロピルトリエトキシシラン、Ｎ−β（アミノエチル）γ−アミノプロピルトリメトキシシラン、Ｎ−β（アミノエチル）γ−アミノプロピルトリエトキシシラン、γ−メルカプトプロピルトリメトキシシラン等が挙げられる。 Other examples of the compound having a functional group capable of capturing a noble metal in the molecule used in the present invention include, for example, a silane coupling agent having an amino group, a mercapto group, etc. as a functional group capable of capturing a noble metal. γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-mercaptopropyl Examples include trimethoxysilane.
貴金属化合物としては、パラジウム、銀、白金、金等の貴金属化合物、例えば、それらのハロゲン化物、水酸化物、硫酸塩、炭酸塩、カルボン酸、スルホン酸、スルフィン酸等の有機酸との塩、貴金属石鹸等を挙げることができる。特にパラジウム化合物が好ましい。パラジウム化合物としては、パラジウムイオンが供給されればよく、特に限定されるものではないが、ハロゲン化物、硫酸塩、カルボン酸塩等が好ましく用いられ、例えば、塩化パラジウム、硫酸パラジウム、酢酸パラジウム等を挙げることができる。また、従来の塩化スズなどの触媒も本発明の目的の範囲内において含有させることができる。 As the noble metal compounds, noble metal compounds such as palladium, silver, platinum, gold, for example, their halides, hydroxides, sulfates, carbonates, salts with organic acids such as carboxylic acids, sulfonic acids, sulfinic acids, A noble metal soap etc. can be mentioned. A palladium compound is particularly preferable. The palladium compound is not particularly limited as long as palladium ions are supplied, but halides, sulfates, carboxylates and the like are preferably used. For example, palladium chloride, palladium sulfate, palladium acetate and the like are used. Can be mentioned. Conventional catalysts such as tin chloride can also be included within the scope of the object of the present invention.
本発明の触媒は、上記分子内に貴金属を捕捉しえる官能基を有する化合物、貴金属化合物の溶液として使用されるが、その溶剤は、分子内に貴金属を捕捉しえる官能基を有する化合物や貴金属化合物の溶解性の点および安全性の点から水溶液が好ましい。溶解性によってはメタノール、エタノール、イソプロパノール、オクチルアルコールなどのアルコール系有機溶剤や、トルエン、キシレンなどの芳香族系有機溶剤などを適宜用いても構わない。 The catalyst of the present invention is used as a solution of a compound having a functional group capable of capturing a noble metal in the molecule or a solution of a noble metal compound, but the solvent is a compound having a functional group capable of capturing a noble metal in the molecule or a noble metal. An aqueous solution is preferable from the viewpoint of the solubility and safety of the compound. Depending on the solubility, alcohol-based organic solvents such as methanol, ethanol, isopropanol, and octyl alcohol, and aromatic organic solvents such as toluene and xylene may be used as appropriate.
触媒中の分子内に貴金属を捕捉しえる官能基を有する化合物の濃度はこれに限ったものではないが、０．００１〜１０重量％が好ましい。０．００１重量％未満の場合、基材の表面に付着する化合物量が低くなりやすく、効果が得にくい。また、１０重量％を超えると付着量が多すぎて乾燥しにくかったり、捕捉貴金属とのバランスが崩れて触媒活性発現に時間がかかり、効果が得にくくなる。 The concentration of the compound having a functional group capable of capturing a noble metal in the molecule in the catalyst is not limited to this, but is preferably 0.001 to 10% by weight. If it is less than 0.001% by weight, the amount of the compound adhering to the surface of the substrate tends to be low, and the effect is difficult to obtain. On the other hand, if the amount exceeds 10% by weight, it is difficult to dry because the amount of adhesion is too large, or the balance with the trapped noble metal is lost and it takes time to develop catalytic activity, making it difficult to obtain the effect.
また、貴金属化合物は、触媒中において、１〜１０００ｍｇ／Ｌ（貴金属換算）、好ましくは１０〜３００ｍｇ／Ｌ（貴金属換算）の濃度で使用することができる。この範囲外でも効果は見られるが、後処理の影響から上記範囲が好ましい。 The noble metal compound can be used in the catalyst at a concentration of 1 to 1000 mg / L (in terms of noble metal), preferably 10 to 300 mg / L (in terms of noble metal). Although the effect can be seen even outside this range, the above range is preferable from the influence of post-treatment.
基材を触媒で処理する方法としては、スルーホール側壁にも均一に付与されるには、浸漬が好ましい。
本発明のスルーホールを有するプリント配線基板としては、例えば、基材にスルーホールを形成した後、定法の脱脂工程、ソフトエッチング工程を行い、次にこれまで述べてきた触媒を浸漬により付与し、常法により、銅、ニッケル等の無電解めっき層を形成したものである。触媒を付与した後は、水洗を行い、例えば１０％硫酸、５％次亜リン酸ナトリウム等で、室温から７０℃で１分から１５分程度触媒を活性化することが好ましい。As a method of treating the substrate with a catalyst, dipping is preferable so that the substrate is uniformly applied to the side wall of the through hole.
As a printed wiring board having a through hole of the present invention, for example, after forming a through hole in a base material, a regular degreasing step and a soft etching step are performed, and then the catalyst described so far is applied by immersion, An electroless plating layer of copper, nickel or the like is formed by a conventional method. After applying the catalyst, it is preferably washed with water and activated with, for example, 10% sulfuric acid, 5% sodium hypophosphite, etc. at room temperature to 70 ° C. for about 1 to 15 minutes.
本発明によるスルーホールを有する配線基板は、そのスルーホールが直径２００μｍ以下、例えば直径１５０μｍの微細スルーホール側壁においても、ボイド発生がなく、均一にめっきされたプリント配線基板となる。 The wiring board having a through hole according to the present invention is a printed wiring board that is uniformly plated without voids even on the side wall of a through hole having a diameter of 200 μm or less, for example, 150 μm.
以下、実施例により本発明を更に詳細に説明するが、本発明は実施例により限定されるものではない。 EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited by an Example.
実施例１
１５０μｍ径のスルーホールを有するプリント配線基板用積層基板を、イミダゾールシラン（イミダゾールと３−グリシドキシプロピルトリメトキシシランの反応生成物）１００ｍｇ／Ｌと、塩化パラジウム５０ｍｇ／Ｌ（Ｐｄ換算３０ｍｇ／Ｌ）とを含んだ水溶液に４０℃で５分浸漬した。これを活性化剤（５％ジ亜リン酸ナトリウム）で４０℃で５分処理することでＰｄを無電解めっき活性にした。無電解銅めっき（キューポジット３２８、Ｒ＆Ｈ製）を室温で２０分行い、銅層を０．５μｍ膜厚つけた。１０００穴のスルーホール内部を観察すると、すべてめっきされていた（図１参照）。Example 1
A laminated substrate for a printed wiring board having a through hole with a diameter of 150 μm is prepared by adding 100 mg / L of imidazole silane (reaction product of imidazole and 3-glycidoxypropyltrimethoxysilane) and 50 mg / L of palladium chloride (30 mg / L in terms of Pd). And 5) for 4 minutes at 40 ° C. This was treated with an activator (5% sodium diphosphite) at 40 ° C. for 5 minutes to make Pd electroless plating activity. Electroless copper plating (Cuposit 328, manufactured by R & H) was performed at room temperature for 20 minutes, and a copper layer was formed to a thickness of 0.5 μm. When the inside of the 1000-hole through hole was observed, it was all plated (see FIG. 1).
実施例２
１５０μｍ径のスルーホールを有するプリント配線基板用積層基板を、アミノシラン（γ−アミノプロピルトリエトキシシラン）１００ｍｇ／Ｌと、酢酸パラジウム１００ｍｇ／Ｌ（Ｐｄ換算４７ｍｇ／Ｌ）とを含んだ水溶液に４０℃で５分浸漬した。これを活性化剤（５％ジ亜リン酸ナトリウム）で４０℃で５分で処理することでＰｄを無電解めっき活性にした。無電解銅めっき（キューポジット３２８、Ｒ＆Ｈ製）を室温で２０分行い、銅層を０．５μｍ膜厚つけた。１０００穴のスルーホール内部を観察すると、すべてめっきされていた。Example 2
A laminated substrate for a printed wiring board having a 150 μm diameter through-hole is placed in an aqueous solution containing 100 mg / L of aminosilane (γ-aminopropyltriethoxysilane) and 100 mg / L of palladium acetate (47 mg / L in terms of Pd) at 40 ° C. Soaked for 5 minutes. This was treated with an activator (5% sodium diphosphite) at 40 ° C. for 5 minutes to make Pd electroless plating activity. Electroless copper plating (Cuposit 328, manufactured by R & H) was performed at room temperature for 20 minutes, and a copper layer was formed to a thickness of 0.5 μm. When the inside of the 1000-hole through hole was observed, it was all plated.
比較例１
１５０μｍ径のスルーホールを有するプリント配線基板用積層基板を、市販のＳｎ−Ｐｄコロイドプロセス（プレディップ液としてキャタプリップ４０４（Ｒ＆Ｈ製）に浸漬、その後キャタリスト液としてキャタプリップ４４（Ｐｄ換算２００ｍｇ／Ｌ、Ｒ＆Ｈ製）に浸漬、水洗後アクチベータ液としてアクセラレータ１９Ｅ（Ｒ＆Ｈ製）に浸漬）で１回処理して、無電解めっき活性にした。その後、実施例１と同様に無電解銅めっきを行った。１０００穴のスルーホール内部を観察すると、１００穴にボイドが見られた。図２にボイドが見られたスルーホールの断面図を示す。スルーホール中で黒く見えるところ（暗部）が無めっき部分（ボイド）である。図１で示す実施例１のスルーホール内には暗部は見当たらず無めっき部分がないが、図２で示す比較例１では、図２におけるスルーホールの上から１／４まではめっきされている（暗部は見当たらない）が、１／４を過ぎると黒い部分が次第に濃くなり、下１／４程度は黒く、ほとんど無めっき部分であることがわかる。Comparative Example 1
A laminated substrate for a printed wiring board having a 150 μm diameter through-hole is immersed in a commercially available Sn-Pd colloid process (catliplip 404 (manufactured by R & H) as a pre-dip solution), and then cataplip 44 (200 mg / L in terms of Pd) as a catalyst solution. R & H) was immersed in accelerator 19E (made by R & H) as an activator solution after being immersed in R & H) and washed once with water to make electroless plating activity. Thereafter, electroless copper plating was performed in the same manner as in Example 1. When the inside of the 1000-hole through hole was observed, voids were seen in 100 holes. FIG. 2 shows a cross-sectional view of a through hole in which a void is seen. The portion (dark part) that appears black in the through hole is the non-plated part (void). In the through hole of Example 1 shown in FIG. 1, no dark portion is found and there is no unplated portion, but in Comparative Example 1 shown in FIG. 2, up to 1/4 of the through hole in FIG. 2 is plated. (The dark part is not found) However, when 1/4 is passed, the black part gradually becomes darker, and the lower 1/4 is black and it can be seen that the part is almost unplated.
Claims (4)
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| JP2007535424A JP4889045B2 (en) | 2005-09-15 | 2006-09-04 | Catalyst for electroless plating on printed wiring board having through hole, and printed wiring board having through hole processed using the catalyst |
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| JP2005268167 | 2005-09-15 | ||
| JP2005268167 | 2005-09-15 | ||
| JP2007535424A JP4889045B2 (en) | 2005-09-15 | 2006-09-04 | Catalyst for electroless plating on printed wiring board having through hole, and printed wiring board having through hole processed using the catalyst |
| PCT/JP2006/317461 WO2007032222A1 (en) | 2005-09-15 | 2006-09-04 | Electroless plating catalyst for printed wiring board having through hole, and printed wiring board having through hole processed by using such catalyst |
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| JP2010282574A Division JP2011091427A (en) | 2005-09-15 | 2010-12-20 | Printed circuit board having fine through hole and method of manufacturing the same |
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| JP2010282574A Pending JP2011091427A (en) | 2005-09-15 | 2010-12-20 | Printed circuit board having fine through hole and method of manufacturing the same |
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| KR (1) | KR100970067B1 (en) |
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| US20110168430A1 (en) * | 2008-09-11 | 2011-07-14 | Takuya Hata | Method of forming metal wiring and electronic part including metal wiring |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01279764A (en) * | 1988-05-06 | 1989-11-10 | Hitachi Chem Co Ltd | Catalyst for electroless plating |
| WO2001081652A1 (en) * | 2000-04-25 | 2001-11-01 | Nikko Materials Co., Ltd. | Pretreating agent for metal plating |
| JP2005213576A (en) * | 2004-01-29 | 2005-08-11 | Nikko Materials Co Ltd | Electroless plating pretreatment agent, electroless plating method using the same, and electroless plated object |
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| JP2988624B2 (en) * | 1997-10-21 | 1999-12-13 | 日本テクノ株式会社 | Plating method |
| JPH11204943A (en) * | 1998-01-08 | 1999-07-30 | Hitachi Ltd | Electronic circuit board and manufacture thereof |
| JP2000212754A (en) * | 1999-01-22 | 2000-08-02 | Sony Corp | Plating method, its device and plated structure |
| JP2001073157A (en) * | 1999-09-08 | 2001-03-21 | Sony Corp | Electroless plating method and device therefor |
| CN1174118C (en) * | 2000-01-07 | 2004-11-03 | 株式会社日矿材料 | Method for metal plating, pretreating agent, and semiconductor wafer and semiconductor device using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01279764A (en) * | 1988-05-06 | 1989-11-10 | Hitachi Chem Co Ltd | Catalyst for electroless plating |
| WO2001081652A1 (en) * | 2000-04-25 | 2001-11-01 | Nikko Materials Co., Ltd. | Pretreating agent for metal plating |
| JP2005213576A (en) * | 2004-01-29 | 2005-08-11 | Nikko Materials Co Ltd | Electroless plating pretreatment agent, electroless plating method using the same, and electroless plated object |
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| JP2011091427A (en) | 2011-05-06 |
| TW200714745A (en) | 2007-04-16 |
| TWI331173B (en) | 2010-10-01 |
| KR20080048043A (en) | 2008-05-30 |
| JPWO2007032222A1 (en) | 2009-03-19 |
| WO2007032222A1 (en) | 2007-03-22 |
| KR100970067B1 (en) | 2010-07-16 |
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