JP4886285B2 - 表示デバイス - Google Patents
表示デバイス Download PDFInfo
- Publication number
- JP4886285B2 JP4886285B2 JP2005350595A JP2005350595A JP4886285B2 JP 4886285 B2 JP4886285 B2 JP 4886285B2 JP 2005350595 A JP2005350595 A JP 2005350595A JP 2005350595 A JP2005350595 A JP 2005350595A JP 4886285 B2 JP4886285 B2 JP 4886285B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum alloy
- film
- pixel electrode
- alloy film
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010408 film Substances 0.000 claims description 245
- 229910000838 Al alloy Inorganic materials 0.000 claims description 175
- 239000000758 substrate Substances 0.000 claims description 92
- 239000002244 precipitate Substances 0.000 claims description 73
- 229910045601 alloy Inorganic materials 0.000 claims description 41
- 239000000956 alloy Substances 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 40
- 239000011701 zinc Substances 0.000 claims description 32
- 229910052709 silver Inorganic materials 0.000 claims description 26
- 229910052725 zinc Inorganic materials 0.000 claims description 25
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- 229910052779 Neodymium Inorganic materials 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 229910052727 yttrium Inorganic materials 0.000 claims description 19
- 229910052742 iron Inorganic materials 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 13
- 230000006870 function Effects 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 239000003870 refractory metal Substances 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 49
- 239000004973 liquid crystal related substance Substances 0.000 description 45
- 239000010410 layer Substances 0.000 description 44
- 239000000203 mixture Substances 0.000 description 44
- 238000004519 manufacturing process Methods 0.000 description 36
- 229910052782 aluminium Inorganic materials 0.000 description 30
- 238000010438 heat treatment Methods 0.000 description 29
- 238000000034 method Methods 0.000 description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 27
- 229910000765 intermetallic Inorganic materials 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 239000006104 solid solution Substances 0.000 description 22
- 239000000243 solution Substances 0.000 description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 15
- 229910004205 SiNX Inorganic materials 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 230000007423 decrease Effects 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 229910001316 Ag alloy Inorganic materials 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052772 Samarium Inorganic materials 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910018137 Al-Zn Inorganic materials 0.000 description 3
- 229910018573 Al—Zn Inorganic materials 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 150000001722 carbon compounds Chemical class 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000013507 mapping Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910002701 Ag-Co Inorganic materials 0.000 description 2
- -1 Al 4 C 3 or NiC Chemical class 0.000 description 2
- 229910001151 AlNi Inorganic materials 0.000 description 2
- 229910018507 Al—Ni Inorganic materials 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000612 Sm alloy Inorganic materials 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910016943 AlZn Inorganic materials 0.000 description 1
- 229910018170 Al—Au Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018459 Al—Ge Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002530 Cu-Y Inorganic materials 0.000 description 1
- 229910017816 Cu—Co Inorganic materials 0.000 description 1
- 229910017827 Cu—Fe Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001278 Sr alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910007564 Zn—Co Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005350595A JP4886285B2 (ja) | 2002-12-19 | 2005-12-05 | 表示デバイス |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002368786 | 2002-12-19 | ||
| JP2002368786 | 2002-12-19 | ||
| JP2005350595A JP4886285B2 (ja) | 2002-12-19 | 2005-12-05 | 表示デバイス |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003274288A Division JP3940385B2 (ja) | 2002-12-19 | 2003-07-14 | 表示デバイスおよびその製法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006194468A Division JP2006339666A (ja) | 2002-12-19 | 2006-07-14 | アルミニウム合金膜形成用スパッタリングターゲット |
| JP2011149596A Division JP2011209756A (ja) | 2002-12-19 | 2011-07-05 | 表示デバイスおよびその製法、ならびにスパッタリングターゲット |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006100856A JP2006100856A (ja) | 2006-04-13 |
| JP2006100856A5 JP2006100856A5 (enExample) | 2006-08-31 |
| JP4886285B2 true JP4886285B2 (ja) | 2012-02-29 |
Family
ID=36240303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005350595A Expired - Fee Related JP4886285B2 (ja) | 2002-12-19 | 2005-12-05 | 表示デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4886285B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4728170B2 (ja) | 2006-05-26 | 2011-07-20 | 三菱電機株式会社 | 半導体デバイスおよびアクティブマトリクス型表示装置 |
| US20090001373A1 (en) * | 2007-06-26 | 2009-01-01 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) | Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit |
| JP5215620B2 (ja) * | 2007-09-12 | 2013-06-19 | 三菱電機株式会社 | 半導体デバイス、表示装置及び半導体デバイスの製造方法 |
| JP5159558B2 (ja) * | 2008-10-28 | 2013-03-06 | 株式会社神戸製鋼所 | 表示装置の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2733006B2 (ja) * | 1993-07-27 | 1998-03-30 | 株式会社神戸製鋼所 | 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット |
| JP3365954B2 (ja) * | 1997-04-14 | 2003-01-14 | 株式会社神戸製鋼所 | 半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜および半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜形成用スパッタリングターゲット |
| JP4458563B2 (ja) * | 1998-03-31 | 2010-04-28 | 三菱電機株式会社 | 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法 |
| JP2000294556A (ja) * | 1999-04-05 | 2000-10-20 | Hitachi Metals Ltd | ドライエッチング性に優れたＡｌ合金配線膜およびＡｌ合金配線膜形成用ターゲット |
| JP2001350159A (ja) * | 2000-06-06 | 2001-12-21 | Hitachi Ltd | 液晶表示装置及びその製造方法 |
| JP2003089864A (ja) * | 2001-09-18 | 2003-03-28 | Mitsui Mining & Smelting Co Ltd | アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材 |
-
2005
- 2005-12-05 JP JP2005350595A patent/JP4886285B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006100856A (ja) | 2006-04-13 |
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