JP4870859B2 - 液相エピタキシャル成長装置及び成長方法 - Google Patents

液相エピタキシャル成長装置及び成長方法 Download PDF

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JP4870859B2
JP4870859B2 JP21476399A JP21476399A JP4870859B2 JP 4870859 B2 JP4870859 B2 JP 4870859B2 JP 21476399 A JP21476399 A JP 21476399A JP 21476399 A JP21476399 A JP 21476399A JP 4870859 B2 JP4870859 B2 JP 4870859B2
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substrate
growth
crystal growth
melt
crystal
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JP2001039793A (ja
JP2001039793A5 (https=
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哲男 齋藤
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Fujitsu Ltd
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Fujitsu Ltd
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP21476399A 1999-07-29 1999-07-29 液相エピタキシャル成長装置及び成長方法 Expired - Fee Related JP4870859B2 (ja)

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JP21476399A JP4870859B2 (ja) 1999-07-29 1999-07-29 液相エピタキシャル成長装置及び成長方法

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JP21476399A JP4870859B2 (ja) 1999-07-29 1999-07-29 液相エピタキシャル成長装置及び成長方法

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JP2001039793A JP2001039793A (ja) 2001-02-13
JP2001039793A5 JP2001039793A5 (https=) 2006-08-24
JP4870859B2 true JP4870859B2 (ja) 2012-02-08

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4618944B2 (ja) * 2001-08-06 2011-01-26 シャープ株式会社 結晶シートの製造装置、および結晶シートの製造方法

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