JP4860428B2 - フォトレジスト組成物及びそれを用いた薄膜トランジスタ基板の製造方法 - Google Patents

フォトレジスト組成物及びそれを用いた薄膜トランジスタ基板の製造方法 Download PDF

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Publication number
JP4860428B2
JP4860428B2 JP2006286899A JP2006286899A JP4860428B2 JP 4860428 B2 JP4860428 B2 JP 4860428B2 JP 2006286899 A JP2006286899 A JP 2006286899A JP 2006286899 A JP2006286899 A JP 2006286899A JP 4860428 B2 JP4860428 B2 JP 4860428B2
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Japan
Prior art keywords
photoresist
film transistor
thin film
transistor substrate
photoresist pattern
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JP2006286899A
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English (en)
Japanese (ja)
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JP2007128067A5 (enExample
JP2007128067A (ja
Inventor
羲 国 李
祐 ▼爽▲ 全
斗 喜 鄭
廷 敏 朴
▼徳▲ 萬 姜
時 永 鄭
宰 榮 崔
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2007128067A5 publication Critical patent/JP2007128067A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2006286899A 2005-10-31 2006-10-20 フォトレジスト組成物及びそれを用いた薄膜トランジスタ基板の製造方法 Active JP4860428B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050102942A KR101268424B1 (ko) 2005-10-31 2005-10-31 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
KR10-2005-0102942 2005-10-31

Publications (3)

Publication Number Publication Date
JP2007128067A JP2007128067A (ja) 2007-05-24
JP2007128067A5 JP2007128067A5 (enExample) 2009-06-25
JP4860428B2 true JP4860428B2 (ja) 2012-01-25

Family

ID=38150729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006286899A Active JP4860428B2 (ja) 2005-10-31 2006-10-20 フォトレジスト組成物及びそれを用いた薄膜トランジスタ基板の製造方法

Country Status (4)

Country Link
US (1) US7955784B2 (enExample)
JP (1) JP4860428B2 (enExample)
KR (1) KR101268424B1 (enExample)
TW (1) TWI410746B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103091987B (zh) * 2008-12-26 2016-11-23 日立化成株式会社 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件
KR20110045418A (ko) * 2009-10-27 2011-05-04 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법
TWI485521B (zh) * 2010-06-28 2015-05-21 Everlight Chem Ind Corp 正型感光樹脂組成物
JP6217230B2 (ja) * 2013-08-19 2017-10-25 Jsr株式会社 感光性樹脂組成物および樹脂組成物、ならびに樹脂膜の製造方法
KR102219109B1 (ko) 2014-01-22 2021-02-24 삼성디스플레이 주식회사 포토레지스트 조성물, 이를 이용한 패턴의 형성 방법 및 박막 트랜지스터 기판의 제조 방법
KR102756671B1 (ko) * 2019-02-21 2025-01-17 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법
KR102854252B1 (ko) * 2022-12-16 2025-09-04 (재)한국나노기술원 고출력 발광소자의 제조방법 및 그에 의해 제조된 고출력 발광소자

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08248631A (ja) * 1995-01-12 1996-09-27 Fuji Photo Film Co Ltd 感光性平版印刷版
JP3347530B2 (ja) * 1995-06-27 2002-11-20 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP4150834B2 (ja) * 1999-03-04 2008-09-17 Ｊｓｒ株式会社 感光性樹脂組成物、感光性樹脂膜およびこれらを用いたバンプ形成方法
JP3615981B2 (ja) 1999-11-24 2005-02-02 クラリアント インターナショナル リミテッド 感光性樹脂組成物
JP3710717B2 (ja) * 2001-03-06 2005-10-26 東京応化工業株式会社 厚膜用ポジ型ホトレジスト組成物、ホトレジスト膜およびこれを用いたバンプ形成方法
JP2004219536A (ja) * 2003-01-10 2004-08-05 Hitachi Chem Co Ltd 感光性樹脂組成物、回路形成用基板、レジストパターンの製造法、プリント配線板の製造法
JP4156400B2 (ja) * 2003-02-24 2008-09-24 東京応化工業株式会社 ポジ型ホトレジスト組成物及びレジストパターンの形成方法
JP2005037712A (ja) * 2003-07-15 2005-02-10 Hitachi Chem Co Ltd パターン化されたレジスト膜の製造方法、レジスト膜形成済回路形成用基板、及びプリント配線板の製造方法
CN100573833C (zh) * 2004-03-25 2009-12-23 株式会社半导体能源研究所 用于制造薄膜晶体管的方法
EP1624333B1 (en) * 2004-08-03 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method thereof, and television set
KR101050619B1 (ko) * 2005-02-18 2011-07-19 삼성전자주식회사 포토레지스트용 노르보넨 중합체 및 그를 포함하는 포토레지스트 조성물
KR101240643B1 (ko) * 2005-07-08 2013-03-08 삼성디스플레이 주식회사 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법

Also Published As

Publication number Publication date
US7955784B2 (en) 2011-06-07
US20070259272A1 (en) 2007-11-08
KR101268424B1 (ko) 2013-05-28
TW200722914A (en) 2007-06-16
KR20070046346A (ko) 2007-05-03
JP2007128067A (ja) 2007-05-24
TWI410746B (zh) 2013-10-01

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