JP4857027B2 - レーザ素子 - Google Patents

レーザ素子 Download PDF

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Publication number
JP4857027B2
JP4857027B2 JP2006150923A JP2006150923A JP4857027B2 JP 4857027 B2 JP4857027 B2 JP 4857027B2 JP 2006150923 A JP2006150923 A JP 2006150923A JP 2006150923 A JP2006150923 A JP 2006150923A JP 4857027 B2 JP4857027 B2 JP 4857027B2
Authority
JP
Japan
Prior art keywords
gain medium
dielectric constant
laser device
wave
clad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006150923A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007324257A (ja
JP2007324257A5 (enExample
Inventor
亮太 関口
敏彦 尾内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006150923A priority Critical patent/JP4857027B2/ja
Priority to US11/742,627 priority patent/US7693198B2/en
Priority to EP07107334A priority patent/EP1863140A1/en
Priority to CN2007101081805A priority patent/CN101083383B/zh
Publication of JP2007324257A publication Critical patent/JP2007324257A/ja
Publication of JP2007324257A5 publication Critical patent/JP2007324257A5/ja
Application granted granted Critical
Publication of JP4857027B2 publication Critical patent/JP4857027B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2006150923A 2006-05-31 2006-05-31 レーザ素子 Expired - Fee Related JP4857027B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006150923A JP4857027B2 (ja) 2006-05-31 2006-05-31 レーザ素子
US11/742,627 US7693198B2 (en) 2006-05-31 2007-05-01 Laser device
EP07107334A EP1863140A1 (en) 2006-05-31 2007-05-02 Laser device
CN2007101081805A CN101083383B (zh) 2006-05-31 2007-05-30 激光器装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006150923A JP4857027B2 (ja) 2006-05-31 2006-05-31 レーザ素子

Publications (3)

Publication Number Publication Date
JP2007324257A JP2007324257A (ja) 2007-12-13
JP2007324257A5 JP2007324257A5 (enExample) 2010-03-04
JP4857027B2 true JP4857027B2 (ja) 2012-01-18

Family

ID=38290143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006150923A Expired - Fee Related JP4857027B2 (ja) 2006-05-31 2006-05-31 レーザ素子

Country Status (4)

Country Link
US (1) US7693198B2 (enExample)
EP (1) EP1863140A1 (enExample)
JP (1) JP4857027B2 (enExample)
CN (1) CN101083383B (enExample)

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JP4881056B2 (ja) 2006-05-01 2012-02-22 キヤノン株式会社 電磁波吸収体部を含むフォトニック結晶電磁波デバイス、及びその製造方法
JP4873746B2 (ja) * 2006-12-21 2012-02-08 キヤノン株式会社 発振素子
JP4871816B2 (ja) * 2007-08-31 2012-02-08 キヤノン株式会社 レーザ素子
JP5127430B2 (ja) * 2007-12-25 2013-01-23 キヤノン株式会社 レーザ素子
JP5106260B2 (ja) * 2008-06-16 2012-12-26 キヤノン株式会社 カスケードレーザ素子
JP5328265B2 (ja) * 2008-08-25 2013-10-30 キヤノン株式会社 テラヘルツ波発生素子、及びテラヘルツ波発生装置
JP5441469B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
JP5441470B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
WO2012015990A2 (en) * 2010-07-27 2012-02-02 The Regents Of The University Of California Plasmon lasers at deep subwavelength scale
KR20120087631A (ko) * 2011-01-28 2012-08-07 삼성전자주식회사 나노 구조화된 음향광학 소자, 및 상기 음향광학 소자를 이용한 광 스캐너, 광 변조기 및 홀로그래픽 디스플레이 장치
JP6062640B2 (ja) 2011-03-18 2017-01-18 キヤノン株式会社 光伝導素子
US8805147B2 (en) 2011-05-17 2014-08-12 Canon Kabushiki Kaisha Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide
US9008983B2 (en) 2011-05-17 2015-04-14 Canon Kabushiki Kaisha Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide
JP6034616B2 (ja) * 2011-09-09 2016-11-30 キヤノン株式会社 導波路及びその製造方法、ならびに電磁波分析装置
JP2013149665A (ja) * 2012-01-17 2013-08-01 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ
US9515449B2 (en) * 2012-06-29 2016-12-06 Martin Terence Hill Metal-insulator-metal waveguide for nano-lasers and optical amplifiers
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JP2014175533A (ja) * 2013-03-11 2014-09-22 Canon Inc レーザ素子
JP2014207654A (ja) * 2013-03-16 2014-10-30 キヤノン株式会社 導波路素子
CN104134860B (zh) * 2014-07-02 2016-10-19 上海大学 毫米波段共面波导馈电的单层介质板Fabry-Perot天线
CN107251346B (zh) * 2014-12-03 2020-08-28 阿尔佩斯激光有限公司 具有电流阻挡层的量子级联激光器
JP6190407B2 (ja) * 2015-03-09 2017-08-30 株式会社東芝 半導体発光装置およびその製造方法
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JP7076937B2 (ja) 2015-06-15 2022-05-30 キヤノン株式会社 半導体素子
JP6597037B2 (ja) * 2015-08-06 2019-10-30 住友電気工業株式会社 量子カスケードレーザデバイス
JP6719882B2 (ja) * 2015-10-20 2020-07-08 キヤノン株式会社 発振素子及びそれを用いた測定装置
US10461216B2 (en) * 2016-09-23 2019-10-29 Wright State University Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures
DE102016125430A1 (de) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür
CN107181037B (zh) * 2017-06-01 2020-09-15 深圳凌波近场科技有限公司 基于表面波光子晶体的开放式法布里佩罗谐振腔
JP2017157865A (ja) * 2017-06-07 2017-09-07 株式会社東芝 半導体発光装置およびその製造方法
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Also Published As

Publication number Publication date
CN101083383B (zh) 2010-09-29
CN101083383A (zh) 2007-12-05
EP1863140A1 (en) 2007-12-05
JP2007324257A (ja) 2007-12-13
US7693198B2 (en) 2010-04-06
US20070280319A1 (en) 2007-12-06

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