JP4854716B2 - Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 - Google Patents
Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 Download PDFInfo
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- JP4854716B2 JP4854716B2 JP2008214776A JP2008214776A JP4854716B2 JP 4854716 B2 JP4854716 B2 JP 4854716B2 JP 2008214776 A JP2008214776 A JP 2008214776A JP 2008214776 A JP2008214776 A JP 2008214776A JP 4854716 B2 JP4854716 B2 JP 4854716B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Description
図1において、青色発光素子11には発光ピーク波長が460nmのSiCをサブストレートとしたInGaNに電極がP/N上下対向配置されているものを用い、赤色発光素子13には発光ピーク波長が624nmのAlGaInPに電極がP/N上下対向配置されているものを用い、緑色蛍光体16には平均粒径が8μmのSrGa2S4:Euを用いた。また、端子電極21a,21b,23a,23bはCu合金製であり表面にAgめっきを施し、ワイヤボンデイング性を向上させている。導電性接着剤14にはAgペーストを用い、ボンディングワイヤ15にはAuワイヤを用いた。光透過性樹脂18には熱硬化性のエポキシ樹脂(比重:1.2)を用いた。
実施例1において、緑色蛍光体と赤色発光素子に替えて従来のYAG系蛍光体を用いて、青色発光素子とYAG系蛍光体から構成される従来のLEDデバイスを作製し、青色発光素子を35mAで駆動させると、青色発光素子により励起されたYAG系蛍光体からの黄色光と青色発光素子からの青色光により、軸上光度0.7cd、CIE色度(0.32,0.31)の白色光が得られた。このLEDデバイスの発光スペクトルを図10に示す。
青色発光素子、赤色発光素子および緑色発光素子から構成される従来のLEDデバイスを作製した。ここで、青色発光素子および赤色発光素子には実施例1と同じ発光素子を用い、緑色発光素子には発光ピーク波長が525nmのInGaNに電極がP/N上下対向配置されているものを用いた。青色発光素子のみを35mAで駆動させると軸上光度0.34cdの青色光が得られ、赤色発光素子のみを35mAで駆動させると軸上光度1.1cdの赤色光が得られ、緑色発光素子のみを35mAで駆動させると、軸上光度1.1cdの緑色光が得られた。すべての発光素子を35mAで駆動させると、軸上光度2.6cd、CIE色度(0.32,0,28)の白色光が得られた。このLEDデバイスの発光スペクトルを図11に示す。
図2において、紫外・紫色発光素子12には、発光ピーク波長が405nmのGaNに電極がP/N上下対向配置されているものを用いた。また、赤色発光素子13、緑色蛍光体16、端子電極21a,21b,22a,22b,23a,23b、導電性接着剤14、ボンディングワイヤ15および光透過性樹脂18は、実施例1と同様のものを用いた。実施例1と同様の手順によりLEDデバイスを作製した。
緑色蛍光体16として、SrGa2S4:Euに替えてSrAl2O4:Euを用い、光透過性樹脂1gに対して緑色蛍光体0.1gを混練した以外は、実施例2と同様にしてLEDデバイスを作製した。
図2において、紫外・紫色発光素子12に替えて青色発光素子(図示せず)を用いて、2個の青色発光素子と1個の赤色発光素子と緑色蛍光体から構成されるLEDデバイスを作製した。本実施例では、緑色蛍光体としてSrGa2S4:Euを用いる。
図3に示すように、青色発光素子11、緑色蛍光体16としてSrGa2S4:Eu、および赤色蛍光体17としてSrCaS:Euから構成されるLEDデバイスを作製した。発光素子として青色発光素子16のみを端子電極21aに固定しボンディングワイヤ15によって端子電極21bに接続したこと、緑色蛍光体16とともに赤色蛍光体17を光透過性樹脂18の中に混練したこと以外は、実施例1と同様にしてLEDデバイスを作製した。ここで、光透過性樹脂1gに対して緑色蛍光体は0.02g混練し、赤色蛍光体は0.03g混練した。得られたLEDデバイスの発光スペクトルを図15に示す。
Claims (9)
- 少なくとも、発光ピーク波長が420nm〜480nmである青色発光素子と、
発光ピーク波長が360nm〜420nmである紫外・紫色発光素子と、
少なくとも前記紫外・紫色発光素子の発光により500nm〜580nmの範囲で蛍光スペクトルを有する緑色蛍光体と、
発光ピーク波長が600nm〜670nmである赤色発光素子とを具備し、
前記青色発光素子が前記緑色蛍光体を励起させないように、前記青色発光素子と前記緑色蛍光体が配置されているLEDデバイス。 - 前記緑色蛍光体の中に、少なくとも母剤がSrAlOで賦活剤にEuを用いた蛍光体SrAlO:Euを含む請求項1に記載のLEDデバイス。
- 前記緑色蛍光体の中に、少なくとも母剤がSrGaSで賦活剤にEuを用いた蛍光体SrGaS:Euを含む請求項1に記載のLEDデバイス。
- 前記緑色蛍光体が、SrGa2S4:Eu、RMg2Al16O27:Eu,Mn(Rは、SrまたはBaから選ばれる少なくとも1の元素)、RMgAl10O17:Eu,Mn(Rは、SrまたはBaから選ばれる少なくとも1の元素)、ZnS:Cu、SrAl2O4:Eu、SrAl2O4:Eu,Dy、ZnO:Zn、Zn2Ge2O4:MnおよびZn2SiO4:Mn、Q3MgSi2O8:Eu,Mn(Qは、Sr、BaまたはCaから選ばれる少なくとも1の元素)からなる蛍光体群から選ばれる少なくとも1の蛍光体からなる請求項1に記載のLEDデバイス。
- 前記緑色蛍光体が、光透過性で、かつ屈折率nがn>1であって、前記緑色蛍光体が、耐熱性、耐水性および光透過性を有するコーティング剤でコーティングされていることを特徴とする請求項1〜請求項4のいずれかに記載のLEDデバイス。
- 前記緑色蛍光体の粒径が20μm以下である請求項1〜請求項5のいずれかに記載のLEDデバイス。
- 請求項1〜6のいずれかに記載のLEDデバイスをCCDまたはCMOSカメラの補助光源として用いたデジタルカメラ。
- 請求項1〜6のいずれかに記載のLEDデバイスをCCDまたはCMOSカメラの補助光源として用いた携帯電話機器。
- 請求項1〜6のいずれかに記載のLEDデバイスをバックライト光源として用いたLCD表示装置。
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JP2008214776A JP4854716B2 (ja) | 2008-08-25 | 2008-08-25 | Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 |
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JP2008214776A JP4854716B2 (ja) | 2008-08-25 | 2008-08-25 | Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 |
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JP2003115987A Division JP4274843B2 (ja) | 2003-04-21 | 2003-04-21 | Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 |
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JP2008283221A JP2008283221A (ja) | 2008-11-20 |
JP4854716B2 true JP4854716B2 (ja) | 2012-01-18 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US8288785B2 (en) * | 2008-12-03 | 2012-10-16 | Seoul Semiconductor Co., Ltd. | Lead frame having light-reflecting layer, light emitting diode having the lead frame, and backlight unit having the light emitting diode |
KR101628836B1 (ko) * | 2009-09-30 | 2016-06-09 | 서울반도체 주식회사 | 발광소자 |
JP5980516B2 (ja) * | 2012-02-10 | 2016-08-31 | シチズン電子株式会社 | Led発光装置 |
JP2014135437A (ja) * | 2013-01-11 | 2014-07-24 | Panasonic Corp | 発光モジュール、照明装置および照明器具 |
DE102013203429B4 (de) * | 2013-02-28 | 2017-12-07 | Osram Opto Semiconductors Gmbh | Verfahren zum Beleuchten einer Umgebung, Beleuchtungsvorrichtung und Kamera mit Beleuchtungsvorrichtung |
JP2013229639A (ja) * | 2013-08-13 | 2013-11-07 | Nec Lighting Ltd | 発光装置及び発光装置の製造方法 |
KR102135626B1 (ko) * | 2013-09-13 | 2020-07-21 | 서울반도체 주식회사 | 자외선 발광 다이오드를 이용한 발광 소자 |
JP2014099625A (ja) * | 2013-12-17 | 2014-05-29 | Dexerials Corp | 発光色変換部材及びその製造方法、並びに発光素子 |
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US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
JP3968933B2 (ja) * | 1998-12-25 | 2007-08-29 | コニカミノルタホールディングス株式会社 | エレクトロルミネッセンス素子 |
JP2001144331A (ja) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | 発光装置 |
US6686691B1 (en) * | 1999-09-27 | 2004-02-03 | Lumileds Lighting, U.S., Llc | Tri-color, white light LED lamps |
DE10051242A1 (de) * | 2000-10-17 | 2002-04-25 | Philips Corp Intellectual Pty | Lichtemittierende Vorrichtung mit beschichtetem Leuchtstoff |
JP3668438B2 (ja) * | 2001-06-07 | 2005-07-06 | シャープ株式会社 | チップ発光ダイオード |
JP4254141B2 (ja) * | 2001-07-30 | 2009-04-15 | 日亜化学工業株式会社 | 発光装置 |
JP2003101078A (ja) * | 2001-09-25 | 2003-04-04 | Toyoda Gosei Co Ltd | 発光装置 |
JP4447806B2 (ja) * | 2001-09-26 | 2010-04-07 | スタンレー電気株式会社 | 発光装置 |
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