JP4853316B2 - Manufacturing method of electronic parts - Google Patents

Description

  The present invention relates to an electronic component manufacturing method, and more particularly to a manufacturing method including a step of screening an electronic component.

As a method for manufacturing an electronic component comprising an element including a dielectric material and a terminal electrode disposed on the outer surface of the element, the measurement probe is energized with the measurement probe in contact with the terminal electrode. There is known a device including a step of measuring electrical characteristics and determining (screening) the quality of an electronic component based on the measured electrical characteristics (see, for example, Patent Document 1).
JP-A-8-227826

  By the way, this kind of dielectric material is accompanied by an electrostriction phenomenon at room temperature. For this reason, when measuring the electrical characteristics of electronic components at room temperature, depending on the magnitude of the voltage applied to the electronic components, the above-mentioned electrostriction phenomenon may cause cracks and the like to good quality electronic components without internal structural defects. There is a drowning.

  An object of the present invention is to provide a method of manufacturing an electronic component capable of simply performing screening without generating cracks or the like in a high-quality electronic component.

  An electronic component manufacturing method according to the present invention includes an element body including a first and second internal electrodes and a dielectric material, and electrically connected to the first internal electrode and external to the element body. An electronic component having a plurality of first terminal electrodes arranged on the surface, and at least one second terminal electrode electrically connected to the second internal electrode and arranged on the outer surface of the element body The first internal electrode is made to be a dielectric by bringing the current-carrying probes into contact with at least two first terminal electrodes of the plurality of first terminal electrodes, respectively, and energizing the current-carrying probes. At least one first terminal electrode of the plurality of first terminal electrodes in a state in which heat is generated to a temperature equal to or higher than the Curie temperature of the material and the first internal electrode is set to a temperature equal to or higher than the Curie temperature of the dielectric material. And at least one second terminal Measuring the electrical characteristics of the electronic component by bringing the measuring probe into contact with the electrodes and energizing between the measuring probes, and determining the quality of the electronic component based on the electrical characteristic. It is characterized by.

  In the method of manufacturing an electronic component according to the present invention, the first internal electrode is made use of the electric resistance of the first internal electrode by energizing the first internal electrode through the energization probe and the first terminal electrode. Is heated to a temperature equal to or higher than the Curie temperature of the dielectric material. At this time, the element body also has a temperature equal to or higher than the substantially Curie temperature. Then, in a state where the first internal electrode is at a temperature equal to or higher than the Curie temperature of the dielectric material, that is, in a state where the element body is at a temperature equal to or higher than the Curie temperature, the electrical characteristics of the electronic component are energized between the measurement probes. Measure. For this reason, the electrostriction phenomenon hardly occurs in the dielectric material included in the element body, and when the electrical characteristics of the electronic component are measured by energizing between the measurement probes, a crack or the like is generated even to a high-quality electronic component. There is nothing.

  By the way, using a furnace, a thermostat, etc. as a method of heating an element | base_body (electronic component) is considered. When heating an element body using a furnace, a thermostat, or the like, the equipment becomes larger and it is difficult to efficiently heat the element body. In contrast, in the present invention, the first internal electrode is heated by energizing the first internal electrode through the first terminal electrode to heat the element body from the inside. Therefore, it is possible to efficiently heat the element body and to easily measure the electrical characteristics in a state where the element body is heated as compared with the case where the electronic component is heated using a furnace, a thermostat, or the like. it can. In the present invention, the equipment for screening does not increase in size.

  Preferably, the energization probe is brought into contact with at least two first terminal electrodes and the measurement probe is brought into contact with at least one first terminal electrode and at least one second terminal electrode while energizing between the energization probes. By doing so, the internal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material, the energization probe is brought into contact with at least two first terminal electrodes, and the measurement probe is connected to at least one first terminal electrode and at least one one. The electrical characteristics of the electronic component are measured by energizing between the measurement probes in contact with the second terminal electrode. In this case, it is not necessary to alternately contact the energization probe and the measurement probe, and the measurement of the heat generation and electrical characteristics of the first internal electrode can be performed more easily.

  A method for manufacturing an electronic component according to the present invention is a method for manufacturing an electronic component having an element including a dielectric material, and an internal electrode disposed in the element, and by energizing the internal electrode. The step of heating the internal electrode to a temperature equal to or higher than the Curie temperature of the dielectric material, and the measurement of the electrical characteristics of the electronic component with the internal electrode set to a temperature equal to or higher than the Curie temperature of the dielectric material And determining whether the electronic component is good or bad based on the above.

  In the method for manufacturing an electronic component according to the present invention, by energizing the internal electrode, the internal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material using the electrical resistance of the internal electrode. At this time, the element body also has a temperature equal to or higher than the substantially Curie temperature. Then, the electrical characteristics of the electronic component are measured in a state where the internal electrode is at a temperature equal to or higher than the Curie temperature of the dielectric material, that is, in a state where the element body is at a temperature equal to or higher than the substantially Curie temperature. For this reason, an electrostriction phenomenon hardly occurs in the dielectric material included in the element body, and cracks or the like are not generated even in a high-quality electronic component when measuring the electrical characteristics of the electronic component.

  In the present invention, the internal electrode is heated by energizing the internal electrode, and the element body in which the internal electrode is arranged is heated from the inside. Therefore, it is possible to efficiently heat the element body and to easily measure the electrical characteristics in a state where the element body is heated as compared with the case where the electronic component is heated using a furnace, a thermostat, or the like. it can. In the present invention, the equipment for screening does not increase in size.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the electronic component which can perform a screening simply without generating a crack etc. in a good quality electronic component can be provided.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

  FIG. 1 is a perspective view of a multilayer ceramic capacitor to which the manufacturing method according to this embodiment is applied. FIG. 2 is a cross-sectional view of the multilayer ceramic capacitor shown in FIG.

  The multilayer ceramic capacitor 1 is a so-called multilayer feedthrough capacitor, and as shown in FIG. 1, a substantially rectangular parallelepiped element body 2, a signal terminal electrode 3 disposed on the outer surface of the element body 2, and an element body 2 and a grounding terminal electrode 5 disposed on the outer surface. The signal terminal electrode 3 and the ground terminal electrode 5 are formed on the surface of the element body 2 so as to be electrically insulated from each other. Each of the terminal electrodes 3 and 5 is multi-layered. For example, Cu, Ni, Ag—Pd, or the like is used at a portion in contact with the element body 2, and Ni—Sn or the like is plated on the outside.

  As shown in FIG. 2, the element body 2 has a plurality of dielectric layers 7. A plurality of signal internal electrodes 8 and ground internal electrodes 9 are arranged on the element body 2 so as to face each other with one dielectric layer 7 interposed therebetween.

The dielectric layer 7 is made of a dielectric material having electrostrictive characteristics, such as a BaTiO ₃ system, a Ba (Ti, Zr) O ₃ system, or a (Ba, Ca) TiO ₃ system. The thickness of the dielectric layer 7 sandwiched between the signal internal electrode 8 and the ground internal electrode 9 is reduced to, for example, 18.5 μm.

  The signal internal electrode 8 and the ground internal electrode 9 are made of a base metal material such as Ni or Cu, or a noble metal material such as Pt or Ag, depending on the type of dielectric material. The signal internal electrode 8 and the ground internal electrode 9 are drawn out to the respective separate side surfaces and electrically connected to the corresponding terminal electrodes 3 and 5. That is, the signal internal electrode 8 is electrically connected to the signal terminal electrode 3, and the ground internal electrode 9 is electrically connected to the ground terminal electrode 5.

  Next, with reference to FIG. 3, a method for manufacturing the multilayer ceramic capacitor according to the present embodiment will be described. FIG. 3 is a diagram showing a flow of a method for manufacturing a multilayer ceramic capacitor according to the present embodiment.

  In the manufacture of the multilayer ceramic capacitor 1, first, a ceramic paste for forming the dielectric layer 7 and an internal electrode paste for forming the internal electrodes 8 and 9 are prepared.

  The ceramic paste can be obtained by mixing and kneading an organic vehicle or the like with the raw material of the dielectric material constituting the dielectric layer 7. As a raw material of the dielectric material, for example, when the dielectric material is various composite oxide materials as described above, oxides, carbonates, nitrates, water of each metal atom contained in the composite oxide Combinations of oxides, organometallic compounds, and the like can be given.

  The organic vehicle includes a binder and a solvent. Examples of the binder include ethyl cellulose, polyvinyl butyral, acrylic resin, and the like. Examples of the solvent include organic solvents such as terpineol, butyl carbitol, acetone, toluene, xylene, ethanol, and methyl ethyl ketone.

  In addition to the above, the ceramic paste may contain various dispersants, plasticizers, dielectrics, glass frit, insulators and the like as necessary.

  The internal electrode paste is obtained by mixing and kneading a conductive material for forming the internal electrodes 8 and 9 and an organic vehicle. As the conductive material, a metal material as described above is used, and various shapes such as a spherical shape and a flake shape can be applied. Moreover, it is preferable to contain an appropriate amount of an inorganic compound in the internal electrode paste as required. Thereby, at the time of baking mentioned later, the difference of the volume change of a ceramic green sheet and an internal electrode paste layer can be made small, and generation | occurrence | production of the stress resulting from this can be reduced. As a result, it is possible to suppress problems such as cracks and warpage due to this stress.

  The organic vehicle includes a binder and a solvent. Examples of the binder include ethyl cellulose, acrylic resin, polyvinyl butyral, polyvinyl acetal, polyvinyl alcohol, polyolefin, polyurethane, polystyrene, and copolymers thereof. Examples of the solvent include terpineol, butyl carbitol, kerosene, acetone and the like.

  A plasticizer may be appropriately contained in the internal electrode paste. As the plasticizer, for example, phthalic acid esters such as benzylbutyl phthalate (BBP), adipic acid, phosphoric acid esters, glycols, and the like can be applied.

  Subsequently, after preparing the above-described ceramic paste and internal electrode paste, first, a ceramic green sheet is formed on the carrier sheet made of PET or the like by a known method such as a doctor blade method (step S1: Sheet forming process). Then, a plurality of internal electrode patterns are formed on the ceramic green sheet by a known method such as a screen printing method (step S3: internal electrode formation step).

  Subsequently, the ceramic green sheets on which the internal electrode patterns are formed are stacked in a predetermined size and stacked in a predetermined number, and pressed from the stacking direction to obtain a green stacked body (step S5: stacking / pressing step). Then, the green laminate is cut into chips of a predetermined size with a cutting machine to obtain green chips (step S7: cutting step).

Subsequently, after removing the binder contained in each part from the green chip (debinding), the green chip is fired (step S9: firing process). By this firing, the element body 2 in which the dielectric layer 7 is formed from the ceramic green sheet and the internal electrodes 8 and 9 are formed from the internal electrode paste layer is obtained. The binder removal can be performed by heating the green chip to about 200 to 600 ° C. in air or in a reducing atmosphere such as a mixed gas of N ₂ and H ₂ . Moreover, baking can be performed by heating the green chip after binder removal to about 1100-1300 degreeC in a reducing atmosphere, for example. And after baking of this green chip, the annealing treatment which hold | maintains at 800-1100 degreeC for 2 to 10 hours is given to the obtained baked product as needed.

  Subsequently, a conductive paste is applied to each side surface of the element body 2 and baked, and further plated to form terminal electrodes 3 and 5 (step S11: terminal electrode forming step). As the conductive paste, a metal powder mainly composed of Cu mixed with glass frit and an organic vehicle can be used. The metal powder may contain Ni, Ag—Pd, or Ag as a main component. For the plating, metal plating such as Ni, Sn, Ni—Sn alloy, Sn—Ag alloy, Sn—Bi alloy or the like can be performed. Further, the metal plating may be a multilayer structure in which two or more layers of Ni and Sn are formed, for example. As described above, a plurality of multilayer ceramic capacitors 1 having the configuration as shown in FIGS. 1 and 2 are obtained.

  Subsequently, the electrical characteristics of the obtained multilayer ceramic capacitor 1 (inspected object) are inspected (step S13: electrical characteristics (insulation resistance) inspection step). The inspection of electrical characteristics is to inspect whether or not the obtained object to be inspected has a predetermined electrical characteristic. The electrical characteristics of the object to be inspected are measured, and based on the measured electrical characteristics. The quality of the object to be inspected is determined. Inspected objects determined to have poor electrical characteristics are excluded, and only the inspected objects screened by the inspection are transferred to another inspection process. The inspection of electrical characteristics includes, for example, withstand voltage inspection, insulation resistance inspection, capacitance inspection, electrostatic tangent inspection, and the like based on the standard (such as JIS standard) of multilayer ceramic capacitors.

  Hereinafter, the insulation resistance inspection process will be described in detail with reference to FIGS. Since each process other than the insulation resistance test is known, detailed description thereof is omitted. 4 and 5 are diagrams showing an outline of the measuring apparatus in the insulation resistance inspection process.

  First, the internal electrode of the device under test 11 (in this embodiment, the grounding internal electrode 9) is heated to a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 7. Here, as shown in FIG. 4, a pair of energizing probes 13 connected to the DC power source 12 are brought into contact with the grounding terminal electrodes 5 to energize the energizing probes 13. As a result, each grounding internal electrode 9 is energized through each grounding terminal electrode 5, and each grounding internal electrode 9 generates heat due to its own electrical resistance.

  Energization of each grounding internal electrode 9 is performed until each grounding internal electrode 9 reaches a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 7. The heat of each grounding internal electrode 9 is directly transmitted to the dielectric layer 7, and the dielectric layer 7 is also heated to a temperature equal to or higher than the Curie temperature. The grounding internal electrode 9 has a narrow lead portion connected to the grounding terminal electrode 5, has a higher electric resistance than the signal internal electrode 8, and generates heat more easily than the signal internal electrode 8. . The Curie temperature of the dielectric material can be measured by differential scanning calorimetry or the like.

  Whether the temperature of the grounding internal electrode 9 is equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 7 is confirmed by measuring the temperature of the grounding internal electrode 9 using a temperature measuring device. Can do. In addition, the power for causing the grounding internal electrode 9 to generate heat from the electrical resistance of the grounding internal electrode 9 to a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 7 is obtained in advance. The temperature of the grounding internal electrode 9 may be equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 7 by supplying the electric power previously obtained from the above.

  Then, the insulation resistance IR of the device under test 11 is measured with each grounding internal electrode 9 of the device under test 11 set to a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 7. As shown in FIG. 5, the insulation resistance IR is obtained by bringing the measurement probe 15 into contact with the signal terminal electrode 3 and the ground terminal electrode 5 and applying a DC voltage from the DC power sources 17 and 19 between the measurement probes 15. Then, electricity is applied between the measurement probes 15, that is, between the signal terminal electrode 3 and the ground terminal electrode 5, and measurement is performed by the measuring instrument 21.

  The step of applying the DC voltage includes a first step and a second step. In the first step, a DC voltage V1 (V / μm) about 10 times the rated voltage is applied. Next, in the second step, a DC voltage V2 (V) that is about 3 to 5 times the rated voltage is applied after the first step.

  In the present embodiment, an example is shown in which DC power supplies 17 and 19 are provided as power supply devices, and the first step and the second step are executed by switching the DC power supplies 17 and 19 by a switching circuit 23. In the first step, the movable contact piece 23a of the switching circuit 23 is brought into contact with the contact 23b, and the DC voltage V1 of the DC power supply 17 is applied between the signal terminal electrode 3 and the ground terminal electrode 5. The application time can be set, for example, in the range of 10 msec to 1.0 sec (preferably in the range of 10 msec to 20 msec).

  In the second step, after completion of the first step, the movable contact piece 23a of the switching circuit 23 is brought into contact with the contact 23c, and the DC voltage V2 of the DC power source 19 is applied to the signal terminal electrode 3 and the ground terminal electrode 5. Apply between. The application time can be set, for example, in the range of 10 msec to 1.0 sec (preferably in the range of 10 msec to 20 msec).

  As described above, the DC voltage V1 applied in the first step is about 10 times the rated voltage (for example, a voltage in the range of 20 to 40 (V / μm)). If the voltage is such a level, if there is a defect in the dielectric layer 7 sandwiched between the adjacent signal internal electrode 8 and the ground internal electrode 9, this defect becomes apparent and the insulation resistance IR is thereby reduced. Therefore, it can be screened as a defective product.

  If the DC voltage V1 applied in the first step is too low (for example, less than 20 (V / μm)), sufficient screening is not performed, and cracks and defective products are generated in thermal evaluation and reliability evaluation. If the DC voltage V1 applied in the first step is too high (for example, higher than 40 (V / μm)), it becomes an overvoltage and damage such as internal cracks remains in the product, and in thermal evaluation and reliability evaluation. Cracks and defective products occur.

  As described above, the DC voltage V2 applied in the second step is about 3 to 5 times the rated voltage. When the DC voltage V2 is less than three times the rated voltage, the reliability evaluation by the second step is insufficient. When the DC voltage V2 exceeds 5 times the rated voltage, it becomes overvoltage. As a result, it is possible to select and remove in advance the inspected object 11 whose life may be deteriorated during the period of use, thereby assuring reliability.

  Subsequently, the appearance of the inspection object screened in the electrical property (insulation resistance) inspection process is inspected (step S15: appearance inspection process). The appearance inspection is to confirm whether or not there is a portion lacking in the appearance of the object to be inspected by a camera or visual inspection. A non-defective product inspected by visual inspection is shipped as a multilayer ceramic capacitor.

  As described above, in the present embodiment, the dielectric layer 7 is formed by utilizing the electric resistance of the grounding internal electrode 9 by energizing the grounding internal electrode 9 through the energization probe 13 and the grounding terminal electrode 5. The grounding internal electrode 9 is caused to generate heat at a temperature equal to or higher than the Curie temperature of the dielectric material. At this time, the dielectric layer 7 also has a temperature that is approximately equal to or higher than the Curie temperature. Then, in a state where the grounding internal electrode 9 is set to a temperature equal to or higher than the Curie temperature of the dielectric material, that is, in a state where the dielectric layer 7 is a temperature equal to or higher than the Curie temperature, a current is passed between the measurement probes 15 to be inspected. The insulation resistance IR of the body 11 (multilayer ceramic capacitor 1) is measured. For this reason, the electrostriction phenomenon hardly occurs in the dielectric material constituting the dielectric layer 7, and when the insulation resistance IR is measured by energizing the measurement probe 15, a crack or the like is generated to the high-quality inspected object 11. There is no end to it.

  By the way, it is conceivable to use a furnace, a thermostatic bath, or the like as a method for heating the device under test 11. When the inspection object 11 is heated using a furnace, a thermostat, or the like, the equipment is increased in size and it is difficult to efficiently heat the inspection object 11. On the other hand, in this embodiment, the grounding internal electrode 9 is heated by energizing the grounding internal electrode 9 through the grounding terminal electrode 5, and the dielectric layer 7 (element body 2) is heated from the inside. ing. Therefore, the dielectric layer 7 can be efficiently heated as compared with the case where the device under test 11 is heated using a furnace, a thermostat, or the like, and the dielectric layer 7 can be easily and electrically heated. Characteristics can be measured. In the present embodiment, the equipment for screening does not increase in size.

  Next, a modification of the present embodiment will be described with reference to FIG. FIG. 6 is a diagram showing an outline of a measuring apparatus in the insulation resistance inspection process.

  In the modification shown in FIG. 6, in the insulation resistance inspection process, the energization probe 13 is brought into contact with the ground terminal electrode 5 and the measurement probe 15 is brought into contact with the signal terminal electrode 3 and the ground terminal electrode 5. By energizing the energizing probe 13 while the energizing probe 13 is in contact with the grounding terminal electrode 5 and the measurement probe 15 is in contact with the signal terminal electrode 3 and the grounding terminal electrode 5, The measurement probe 15 is heated in a state where the temperature is equal to or higher than the Curie temperature of the dielectric material, the energization probe 13 is in contact with the ground terminal electrode 5 and the measurement probe 15 is in contact with the signal terminal electrode 3 and the ground terminal electrode 5. The insulation resistance IR of the device under test 11 is measured by energizing it. Thereby, it is not necessary to make the energization probe 13 and the measurement probe 15 contact alternately, and the heat generation and the insulation resistance IR of the grounding internal electrode 9 can be measured more easily.

  The preferred embodiments of the present invention have been described above. However, the present invention is not necessarily limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention.

  In the present embodiment, a method for manufacturing a multilayer ceramic capacitor has been described as an example of an electronic component. However, the method is not particularly limited as long as the electronic component uses a dielectric material having an electrostrictive effect. This method can also be applied.

  In the present embodiment, the grounding internal electrode 9 is caused to generate heat in the insulation resistance test process, and the grounding internal electrode 9 is set to a temperature equal to or higher than the Curie temperature of the dielectric material. In the voltage inspection step), the grounding internal electrode 9 may be heated to inspect the grounding internal electrode 9 at a temperature equal to or higher than the Curie temperature of the dielectric material.

  In the present embodiment, the grounding internal electrode 9 is energized to cause the grounding internal electrode 9 to generate heat. However, the present invention is not limited to this, and the signal internal electrode 8 is energized to cause the signal internal electrode 8 to generate heat. Alternatively, the signal internal electrode 8 and the ground internal electrode 9 may be energized to cause the internal electrodes 8 and 9 to generate heat.

It is a perspective view of the multilayer ceramic capacitor to which the manufacturing method concerning this embodiment is applied. It is sectional drawing of the multilayer ceramic capacitor shown by FIG. It is a figure which shows the flow of the manufacturing method of the multilayer ceramic capacitor which concerns on this embodiment. It is a figure which shows the outline of the measuring apparatus in the insulation resistance test process in the manufacturing method of the multilayer ceramic capacitor which concerns on this embodiment. It is a figure which shows the outline of the measuring apparatus in the insulation resistance test process in the manufacturing method of the multilayer ceramic capacitor which concerns on this embodiment. It is a figure which shows the outline of the measuring apparatus in the insulation resistance test process in the modification of the manufacturing method of the multilayer ceramic capacitor which concerns on this embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Multilayer ceramic capacitor, 2 ... Element, 3 ... Signal terminal electrode, 5 ... Ground terminal electrode, 7 ... Dielectric layer, 8 ... Signal internal electrode, 9 ... Ground internal electrode, 11 ... Inspected object , 12, 17, 19 ... DC power supply, 13 ... energization probe, 15 ... measurement probe, 21 ... measuring instrument.

Claims (4)

An element body including first and second internal electrodes and including a dielectric material, and a plurality of first elements electrically connected to the first internal electrode and disposed on an outer surface of the element body A terminal electrode and at least one second terminal electrode electrically connected to the second internal electrode and disposed on the outer surface of the element body,
A current probe connected to a DC power source is brought into contact with at least two first terminal electrodes of the plurality of first terminal electrodes, and the first internal electrode is energized between the current probes. Generating heat to a temperature equal to or higher than the Curie temperature of the dielectric material by the electric resistance of the first internal electrode ;
At least one first terminal electrode and at least one second terminal electrode among the plurality of first terminal electrodes in a state where the first internal electrode is set to a temperature equal to or higher than the Curie temperature of the dielectric material. Measuring the electrical characteristics of the electronic components by contacting each of the measurement probes and energizing between the measurement probes, and determining the quality of the electronic components based on the electrical characteristics. A method of manufacturing an electronic component, comprising: The energization probe is brought into contact with the at least two first terminal electrodes and the measurement probe is brought into contact with the at least one first terminal electrode and the at least one second terminal electrode. a by energizing, by heating said first internal electrodes to the Curie temperature or higher temperature of the dielectric material by the electric resistance possessed by the first internal electrode,
The current-carrying probe is brought into contact with the at least two first terminal electrodes and the measurement probe is brought into contact with the at least one first terminal electrode and the at least one second terminal electrode. 2. The method of manufacturing an electronic component according to claim 1, wherein an electrical characteristic of the electronic component is measured by energizing the electronic component.   The method of manufacturing an electronic component according to claim 1, wherein an insulation resistance is measured as the electrical characteristic. 4. The manufacturing of an electronic component according to claim 1, wherein the first internal electrode has a narrow lead portion connected to the first terminal electrode. 5. Method.

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