JP2008192994A - Method of manufacturing electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an electronic component with which screening is simply carried out without generating cracks or the like in good-quality electronic components. <P>SOLUTION: Terminal electrodes 5, 6 of an object 7 to be inspected are heated to a temperature equal to or higher than the Curie temperature of the dielectric material for constituting a dielectric layer 2, by touching each pair of current-carrying probes 13, which are connected to a DC power source 11, to each of the terminal electrodes 5, 6 to feed a current between the current-carrying probes 13. Thereby, an electric current is fed to each of the terminal electrodes 5, 6, to heat themselves by their own electric resistances. The insulation resistance IR of the object 7 to be inspected is measured under the condition in which the temperature of the terminal electrodes 5, 6 of the object 7 to be inspected is equal to or higher than the Curie temperature of the dielectric material for constituting the dielectric layer 2. The insulation resistance IR is measured by a measurement apparatus by respectively making measurement probes contact the terminal electrodes 5, 6, and applying a DC voltage between the measurement probes from a DC power source to pass a current between the terminal electrodes 5 and 6. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electronic component manufacturing method, and more particularly to a manufacturing method including a step of screening an electronic component.

As a method for manufacturing an electronic component comprising an element including a dielectric material and a terminal electrode disposed on the outer surface of the element, the measurement probe is energized with the measurement probe in contact with the terminal electrode. There is known a device including a step of measuring electrical characteristics and determining (screening) the quality of an electronic component based on the measured electrical characteristics (see, for example, Patent Document 1).
JP-A-8-227826

  By the way, this kind of dielectric material is accompanied by an electrostriction phenomenon at room temperature. For this reason, when measuring the electrical characteristics of electronic components at room temperature, depending on the magnitude of the voltage applied to the electronic components, the above-mentioned electrostriction phenomenon may cause cracks and the like to good quality electronic components without internal structural defects. There is a drowning.

  An object of the present invention is to provide a method of manufacturing an electronic component capable of simply performing screening without generating cracks or the like in a high-quality electronic component.

  A method of manufacturing an electronic component according to the present invention is a method of manufacturing an electronic component having an element body including a dielectric material and a terminal electrode disposed on the outer surface of the element body. The terminal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material, and the terminal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material. A step of contacting the measurement probe and energizing the measurement probe to measure the electrical characteristics of the electronic component, and determining the quality of the electronic component based on the electrical characteristic.

  In the method of manufacturing an electronic component according to the present invention, the terminal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material by using the electric resistance of the terminal electrode by energizing the terminal electrode through the energization probe. At this time, the element body also has a temperature that is approximately equal to or higher than the Curie temperature. Then, in a state where the terminal electrode is at a temperature equal to or higher than the Curie temperature of the dielectric material, that is, in a state where the element body is at a temperature equal to or higher than the Curie temperature, the measurement probe is energized to measure the electrical characteristics of the electronic component. For this reason, the electrostriction phenomenon is unlikely to occur in the dielectric material contained in the element body, and when the electrical characteristics of the electronic component are measured by energizing the measurement probe, a crack or the like is generated even to a high-quality electronic component. There is no.

  By the way, using a furnace, a thermostat, etc. as a method of heating an element | base_body (electronic component) is considered. When heating an element body using a furnace, a thermostat, or the like, the equipment becomes larger and it is difficult to efficiently heat the element body. On the other hand, in the present invention, the terminal electrode is heated by energizing the terminal electrode, and the element body in which the terminal electrode is arranged is heated. Therefore, it is possible to efficiently heat the element body and to easily measure the electrical characteristics in a state where the element body is heated as compared with the case where the electronic component is heated using a furnace, a thermostat, or the like. it can. In the present invention, the equipment for screening does not increase in size.

  Preferably, by energizing the energizing probe with the energizing probe and the measurement probe in contact with the terminal electrode, the terminal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material, and the energizing probe and the measuring probe are connected to the terminal. The electrical characteristics of the electronic component are measured by energizing the measurement probe in contact with the electrodes. In this case, it is not necessary to alternately contact the energization probe and the measurement probe, and the measurement of the heat generation and electrical characteristics of the terminal electrode can be performed more simply.

  Preferably, the terminal electrode includes a first electrode layer and a second electrode layer having an electric resistance higher than that of the first electrode layer. In this case, the presence of the second electrode layer allows the terminal electrode to generate heat efficiently. As a result, the element body can be heated quickly and more efficiently.

  The electronic component manufacturing method according to the present invention is a method of manufacturing an electronic component having an element body including a dielectric material and a terminal electrode disposed on the outer surface of the element body, and the terminal electrode generates heat. A step of heating the terminal electrode to a temperature equal to or higher than the Curie temperature of the dielectric material by bringing the body into contact; And measuring the electrical characteristics of the electronic component by energizing the measurement probe and determining the quality of the electronic component based on the electrical characteristics.

  In the method of manufacturing an electronic component according to the present invention, the terminal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material by bringing the heating element into contact with the terminal electrode. At this time, the element body also has a temperature that is approximately equal to or higher than the Curie temperature. Then, in a state where the terminal electrode is at a temperature equal to or higher than the Curie temperature of the dielectric material, that is, in a state where the element body is at a temperature equal to or higher than the Curie temperature, the measurement probe is energized to measure the electrical characteristics of the electronic component. For this reason, the electrostriction phenomenon is unlikely to occur in the dielectric material contained in the element body, and when the electrical characteristics of the electronic component are measured by energizing the measurement probe, a crack or the like is generated even to a high-quality electronic component. There is no.

  Moreover, in this invention, a terminal electrode is heated by making a heat generating body contact, and the element body in which the terminal electrode is arrange | positioned is heated. Therefore, it is possible to efficiently heat the element body and to easily measure the electrical characteristics in a state where the element body is heated as compared with the case where the electronic component is heated using a furnace, a thermostat, or the like. it can. In the present invention, the equipment for screening does not increase in size.

  Preferably, the terminal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material while the heating element and the measurement probe are in contact with the terminal electrode, and the measurement is performed with the energization probe and the measurement probe in contact with the terminal electrode. Energize the probe and measure the electrical characteristics of the electronic components. In this case, it is not necessary to alternately contact the heating element and the measurement probe, and the heating of the terminal electrode and the measurement of the electrical characteristics can be performed more simply.

  An electronic component manufacturing method according to the present invention is a method for manufacturing an electronic component having an element body including a dielectric material and a terminal electrode disposed on an outer surface of the element body, and the terminal electrode is energized. Measuring the electrical characteristics of the electronic component in a state where the terminal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material, and the terminal electrode is set to a temperature equal to or higher than the Curie temperature of the dielectric material, And a step of determining the quality of the electronic component based on the electrical characteristics.

  In the method for manufacturing an electronic component according to the present invention, by energizing the terminal electrode, the terminal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material using the electrical resistance of the terminal electrode. At this time, the element body also has a temperature that is approximately equal to or higher than the Curie temperature. Then, in a state where the terminal electrode is at a temperature equal to or higher than the Curie temperature of the dielectric material, that is, in a state where the element body is at a temperature equal to or higher than the Curie temperature, the measurement probe is energized to measure the electrical characteristics of the electronic component. For this reason, the electrostriction phenomenon is unlikely to occur in the dielectric material contained in the element body, and when the electrical characteristics of the electronic component are measured by energizing the measurement probe, a crack or the like is generated even to a high-quality electronic component. There is no.

  In the present invention, the terminal electrode is heated by energizing the terminal electrode to heat the element body on which the terminal electrode is arranged. Therefore, it is possible to efficiently heat the element body and to easily measure the electrical characteristics in a state where the element body is heated as compared with the case where the electronic component is heated using a furnace, a thermostat, or the like. it can. In the present invention, the equipment for screening does not increase in size.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the electronic component which can perform a screening simply without generating a crack etc. in a good quality electronic component can be provided.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

(First embodiment)
FIG. 1 is a cross-sectional view of a multilayer ceramic capacitor to which the manufacturing method according to the first embodiment is applied. The multilayer ceramic capacitor 1 is formed on a substantially rectangular parallelepiped element body 4 (stacked body) in which a plurality of dielectric layers 2 and internal electrodes 3 are alternately laminated, and on both end faces in a direction intersecting the lamination direction of the element body 4. Terminal electrodes 5 and 6 are provided.

The dielectric layer 2 is made of a dielectric material having electrostrictive characteristics, such as a BaTiO ₃ system, a Ba (Ti, Zr) O ₃ system, or a (Ba, Ca) TiO ₃ system, and is a dielectric sandwiched between the internal electrodes 3. The thickness of the body layer 2 is reduced to, for example, 18.5 μm. The internal electrode 3 is made of a base metal material such as Ni or Cu, or a noble metal material such as Pt or Ag, and is disposed to face the dielectric layer 2 while being different depending on the type of dielectric material. The internal electrodes 3 arranged to face each other are drawn out to separate side surfaces and are electrically connected to the terminal electrodes 5 and 6. Each of the terminal electrodes 5 and 6 is multi-layered. For example, Cu, Ni, Ag—Pd, or the like is used at a portion in contact with the element body 4, and Ni—Sn or the like is plated on the outside thereof.

  Then, with reference to FIG. 2, the manufacturing method of the multilayer ceramic capacitor which concerns on 1st Embodiment is demonstrated. FIG. 2 is a diagram illustrating a flow of the method for manufacturing the multilayer ceramic capacitor according to the first embodiment.

  In manufacturing the multilayer ceramic capacitor 1, first, a ceramic paste for forming the dielectric layer 2 and an internal electrode paste for forming the internal electrode 3 are respectively prepared.

  The ceramic paste can be obtained by mixing and kneading an organic vehicle or the like with the raw material of the dielectric material constituting the dielectric layer 2. As a raw material of the dielectric material, for example, when the dielectric material is various composite oxide materials as described above, oxides, carbonates, nitrates, water of each metal atom contained in the composite oxide Combinations of oxides, organometallic compounds, and the like can be given.

  The organic vehicle includes a binder and a solvent. Examples of the binder include ethyl cellulose, polyvinyl butyral, acrylic resin, and the like. Examples of the solvent include organic solvents such as terpineol, butyl carbitol, acetone, toluene, xylene, ethanol, and methyl ethyl ketone.

  In addition to the above, the ceramic paste may contain various dispersants, plasticizers, dielectrics, glass frit, insulators and the like as necessary.

  The internal electrode paste is obtained by mixing and kneading a conductive material for forming the internal electrode 3 and an organic vehicle. As the conductive material, a metal material as described above is used, and various shapes such as a spherical shape and a flake shape can be applied. Moreover, it is preferable to contain an appropriate amount of an inorganic compound in the internal electrode paste as required. Thereby, at the time of baking mentioned later, the difference of the volume change of a ceramic green sheet and an internal electrode paste layer can be made small, and generation | occurrence | production of the stress resulting from this can be reduced. As a result, it is possible to suppress problems such as cracks and warpage due to this stress.

  The organic vehicle includes a binder and a solvent. Examples of the binder include ethyl cellulose, acrylic resin, polyvinyl butyral, polyvinyl acetal, polyvinyl alcohol, polyolefin, polyurethane, polystyrene, and copolymers thereof. Examples of the solvent include terpineol, butyl carbitol, kerosene, acetone and the like.

  A plasticizer may be appropriately contained in the internal electrode paste. As the plasticizer, for example, phthalic acid esters such as benzylbutyl phthalate (BBP), adipic acid, phosphoric acid esters, glycols, and the like can be applied.

  Subsequently, after preparing the above-described ceramic paste and internal electrode paste, first, a ceramic green sheet is formed on the carrier sheet made of PET or the like by a known method such as a doctor blade method (step S1: Sheet forming process). Then, a plurality of internal electrode patterns are formed on the ceramic green sheet by a known method such as a screen printing method (step S3: internal electrode formation step).

  Subsequently, the ceramic green sheets on which the internal electrode patterns are formed are stacked in a predetermined size and stacked in a predetermined number, and pressed from the stacking direction to obtain a green stacked body (step S5: stacking / pressing step). Then, the green laminate is cut into chips of a predetermined size with a cutting machine to obtain green chips (step S7: cutting step).

Subsequently, after removing the binder contained in each part from the green chip (debinding), the green chip is fired (step S9: firing process). By this firing, an element body 4 in which the dielectric layer 2 is formed from the ceramic green sheet and the internal electrode 3 is formed from the internal electrode paste layer is obtained. The binder removal can be performed by heating the green chip to about 200 to 600 ° C. in air or in a reducing atmosphere such as a mixed gas of N ₂ and H ₂ . Moreover, baking can be performed by heating the green chip after binder removal to about 1100-1300 degreeC in a reducing atmosphere, for example. And after baking of this green chip, the annealing treatment which hold | maintains at 800-1100 degreeC for 2 to 10 hours is given to the obtained baked product as needed.

  Subsequently, a conductive paste is applied to both ends of the element body 4 and baked, and further plated to form terminal electrodes 5 and 6 (step S11: terminal electrode forming step). As the conductive paste, a metal powder mainly composed of Cu mixed with glass frit and an organic vehicle can be used. The metal powder may contain Ni, Ag—Pd, or Ag as a main component. For the plating, metal plating such as Ni, Sn, Ni—Sn alloy, Sn—Ag alloy, Sn—Bi alloy or the like can be performed. Further, the metal plating may be a multilayer structure in which two or more layers of Ni and Sn are formed, for example. As described above, a plurality of multilayer ceramic capacitors 1 having the configuration as shown in FIG. 1 are obtained.

  Subsequently, the electrical characteristics of the obtained multilayer ceramic capacitor 1 (inspected object) are inspected (step S13: electrical characteristics (insulation resistance) inspection step). The inspection of electrical characteristics is to inspect whether or not the obtained object to be inspected has a predetermined electrical characteristic. The electrical characteristics of the object to be inspected are measured, and based on the measured electrical characteristics. The quality of the object to be inspected is determined. Inspected objects determined to have poor electrical characteristics are excluded, and only the inspected objects screened by the inspection are transferred to another inspection process. The inspection of electrical characteristics includes, for example, withstand voltage inspection, insulation resistance inspection, capacitance inspection, electrostatic tangent inspection, and the like based on the standard (such as JIS standard) of multilayer ceramic capacitors.

  Hereinafter, the insulation resistance inspection process will be described in detail with reference to FIGS. 3 and 4. Since each process other than the insulation resistance test is known, detailed description thereof is omitted. 3 and 4 are diagrams showing an outline of the measuring apparatus in the insulation resistance inspection process.

  First, the terminal electrodes 5 and 6 of the device under test 7 are heated to a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2. Here, as shown in FIG. 3, the energization probe 13 connected to the DC power source 11 is brought into contact with the terminal electrodes 5 and 6 to energize the energization probe 13. As a result, the terminal electrodes 5 and 6 are also energized, and the terminal electrodes 5 and 6 generate heat due to their own electrical resistance.

  The terminal electrodes 5 and 6 are energized until the terminal electrodes 5 and 6 reach a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2. The heat of the terminal electrodes 5 and 6 is transmitted directly to the dielectric layer 2 or indirectly through the internal electrode 3, and the dielectric layer 2 is also heated to a temperature equal to or higher than the Curie temperature. The Curie temperature of the dielectric material can be measured by differential scanning calorimetry or the like.

  Whether or not the temperature of the terminal electrodes 5 and 6 is equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2 is confirmed by measuring the temperature of the terminal electrodes 5 and 6 using a temperature measuring device. Can do. In addition, power for causing the terminal electrodes 5 and 6 to generate heat is obtained in advance from the electrical resistance of the terminal electrodes 5 and 6 to a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2, and the DC power supply 11 The temperature of the terminal electrodes 5 and 6 may be equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2 by supplying power obtained in advance from the above.

  Then, the insulation resistance IR of the device under test 7 is measured with the terminal electrodes 5 and 6 of the device under test 7 set to a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2. As shown in FIG. 4, the insulation resistance IR is obtained by bringing the measurement probe 15 into contact with the terminal electrodes 5 and 6 and applying a DC voltage from the DC power sources 17 and 19 between the measurement probes 15, that is, between the measurement probes 15. Electricity is supplied between the terminal electrodes 5 and 6 and measurement is performed by the measuring instrument 21.

  The step of applying the DC voltage includes a first step and a second step. In the first step, a DC voltage V1 (V / μm) about 10 times the rated voltage is applied. Next, in the second step, a DC voltage V2 (V) that is about 3 to 5 times the rated voltage is applied after the first step.

  In the first embodiment, an example is shown in which DC power supplies 17 and 19 are provided as power supply devices, and the first step and the second step are executed by switching the DC power supplies 17 and 19 by a switching circuit 23. In the first step, the movable contact piece 23 a of the switching circuit 23 is brought into contact with the contact 23 b, and the DC voltage V 1 of the DC power supply 17 is applied between the terminal electrodes 5 and 6. The application time can be set, for example, in the range of 10 msec to 1.0 sec (preferably in the range of 10 msec to 20 msec).

  In the second step, after the completion of the first step, the movable contact piece 23a of the switching circuit 23 is brought into contact with the contact 23c, and the DC voltage V2 of the DC power source 19 is applied between the terminal electrodes 5 and 6. The application time can be set, for example, in the range of 10 msec to 1.0 sec (preferably in the range of 10 msec to 20 msec).

  As described above, the DC voltage V1 applied in the first step is about 10 times the rated voltage (for example, a voltage in the range of 20 to 40 (V / μm)). If the voltage is such a level, if there is a defect in the dielectric layer 2 sandwiched between the adjacent internal electrodes 3, the defect can be made apparent and the insulation resistance IR can be screened as a defective product. it can.

  If the DC voltage V1 applied in the first step is too low (for example, less than 20 (V / μm)), sufficient screening is not performed, and cracks and defective products are generated in thermal evaluation and reliability evaluation. If the DC voltage V1 applied in the first step is too high (for example, higher than 40 (V / μm)), it becomes an overvoltage and damage such as internal cracks remains in the product, and in thermal evaluation and reliability evaluation. Cracks and defective products occur.

  As described above, the DC voltage V2 applied in the second step is about 3 to 5 times the rated voltage. When the DC voltage V2 is less than three times the rated voltage, the reliability evaluation by the second step is insufficient. When the DC voltage V2 exceeds 5 times the rated voltage, it becomes overvoltage. As a result, it is possible to select and remove in advance the object to be inspected 7 whose lifetime is likely to deteriorate during the period of use, thereby assuring reliability.

  Subsequently, the appearance of the inspection object screened in the electrical property (insulation resistance) inspection process is inspected (step S15: appearance inspection process). The appearance inspection is to confirm whether or not there is a portion lacking in the appearance of the object to be inspected by a camera or visual inspection. A non-defective product inspected by visual inspection is shipped as a multilayer ceramic capacitor.

  As described above, according to the first embodiment, the dielectric material that forms the dielectric layer 2 using the electrical resistance of the terminal electrodes 5 and 6 by energizing the terminal electrodes 5 and 6 through the energization probe 13. The terminal electrodes 5 and 6 are heated to a temperature equal to or higher than the Curie temperature. At this time, the dielectric layer 2 is also at a temperature approximately equal to or higher than the Curie temperature. Then, the terminal electrodes 5 and 6 are energized between the measurement probes 15 in a state where the temperature is equal to or higher than the Curie temperature of the dielectric material, that is, in a state where the dielectric layer 2 is equal to or higher than the Curie temperature. The insulation resistance IR of the body 7 (multilayer ceramic capacitor 1) is measured. For this reason, the electrostriction phenomenon hardly occurs in the dielectric material constituting the dielectric layer 2, and when the insulation resistance IR is measured by energizing between the measurement probes 15, cracks or the like are generated up to the high-quality inspected object 7. There is no end to it.

  By the way, it is conceivable to use a furnace, a thermostatic bath, or the like as a method of heating the inspection object 7. When the inspection object 7 is heated using a furnace, a thermostat, or the like, the equipment is enlarged and it is difficult to efficiently heat the inspection object 7. In contrast, in the first embodiment, the dielectric layer 2 is heated by causing the terminal electrodes 5 and 6 to generate heat by energizing the terminal electrodes 5 and 6. Therefore, the dielectric layer 2 can be efficiently heated as compared with the case where the object to be inspected 7 is heated using a furnace, a thermostat, or the like, and the insulation resistance can be simply maintained in a state where the dielectric layer 2 is heated. IR can be measured. Moreover, in 1st Embodiment, the installation for screening does not enlarge.

  Next, a modification of the first embodiment will be described with reference to FIG. FIG. 5 is a diagram showing an outline of a measuring apparatus in the insulation resistance inspection process.

  In the modification shown in FIG. 5, the energization probe 13 and the measurement probe 15 are both brought into contact with the terminal electrodes 5 and 6 in the insulation resistance inspection process. That is, by energizing the energizing probe 13 with the energizing probe 13 and the measurement probe 15 in contact with the terminal electrodes 5 and 6, the terminal electrodes 5 and 6 are heated to a temperature equal to or higher than the Curie temperature of the dielectric material. The insulation resistance IR of the device under test 7 is measured by energizing the measurement probe 15 with the probe 13 and the measurement probe 15 in contact with the terminal electrodes 5 and 6. Thereby, it is not necessary to make the electricity supply probe 13 and the measurement probe 15 contact alternately, and the heat generation of the terminal electrodes 5 and 6 and the measurement of the insulation resistance IR can be performed more simply.

  In the first embodiment and its modification, as shown in FIG. 6, the terminal electrodes 5 and 6 are the first electrode layers 5 a and 6 a and the first electrode layers 5 a and 6 a as the device to be inspected 7 (multilayer ceramic capacitor 1). It is preferable to include the second electrode layers 5b and 6b having higher electric resistance than the electrode layers 5a and 6a. In this case, the presence of the second electrode layers 5b and 6b allows the terminal electrodes 5 and 6 to generate heat efficiently. As a result, the dielectric layer 2 can be heated quickly and more efficiently. The second electrode layers 5b and 6b can be composed of a metal oxide layer.

(Second Embodiment)
With reference to FIG. 7, the manufacturing method of the multilayer ceramic capacitor which concerns on 2nd Embodiment is demonstrated. FIG. 7 is a diagram showing an outline of a measuring apparatus in the insulation resistance inspection process. The manufacturing process according to the second embodiment is the same as the manufacturing method according to the first embodiment except for an insulation resistance inspection process described later, and the description of the overlapping processes is omitted.

  In the insulation resistance inspection step according to the second embodiment, first, the terminal electrodes 5 and 6 of the device under test 7 are heated to a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2. Here, as shown in FIG. 7, the heating element 25 is brought into contact with the terminal electrodes 5 and 6 to heat the terminal electrodes 5 and 6. The heating element 25 has an electric heater (not shown) and generates heat to a temperature equal to or higher than the Curie temperature of the dielectric material. The heating element 25 is kept in contact until the terminal electrodes 5 and 6 reach a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2. The heat of the terminal electrodes 5 and 6 is transmitted directly to the dielectric layer 2 or indirectly through the internal electrode 3, and the dielectric layer 2 is also heated to a temperature equal to or higher than the Curie temperature.

  Then, the insulation resistance IR of the device under test 7 is measured with the terminal electrodes 5 and 6 of the device under test 7 set to a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2. As in the first embodiment, the insulation resistance IR is obtained by bringing the measurement probe 15 into contact with the terminal electrodes 5 and 6 and applying a DC voltage from the DC power sources 17 and 19 between the measurement probes 15 as shown in FIG. Then, electricity is applied between the measurement probes 15, that is, between the terminal electrodes 5 and 6, and measurement is performed by the measuring device 21.

  As described above, in the second embodiment, the heating element 25 is brought into contact with the terminal electrodes 5 and 6 to heat the terminal electrodes 5 and 6 to a temperature equal to or higher than the Curie temperature of the dielectric material constituting the dielectric layer 2. To do. At this time, the dielectric layer 2 is also at a temperature approximately equal to or higher than the Curie temperature. Then, the terminal electrodes 5 and 6 are energized between the measurement probes 15 in a state where the temperature is equal to or higher than the Curie temperature of the dielectric material, that is, in a state where the dielectric layer 2 is equal to or higher than the Curie temperature. The insulation resistance IR of the body 7 (multilayer ceramic capacitor 1) is measured. For this reason, the electrostriction phenomenon hardly occurs in the dielectric material constituting the dielectric layer 2, and when the insulation resistance IR is measured by energizing between the measurement probes 15, cracks or the like are generated up to the high-quality inspected object 7. There is no end to it.

  In the second embodiment, the dielectric layer 2 is heated by heating the terminal electrodes 5 and 6 by bringing the heating element 25 into contact therewith. Therefore, the dielectric layer 2 can be efficiently heated as compared with the case where the object to be inspected 7 is heated using a furnace, a thermostat, or the like, and the insulation resistance can be simply maintained in a state where the dielectric layer 2 is heated. IR can be measured. Moreover, in 2nd Embodiment, the installation for screening does not enlarge.

  Next, a modification of the second embodiment will be described with reference to FIG. FIG. 8 is a diagram showing an outline of a measuring apparatus in the insulation resistance inspection process.

  In the modification shown in FIG. 8, both the heating element 25 and the measurement probe 15 are brought into contact with the terminal electrodes 5 and 6 in the insulation resistance inspection process. That is, with the heating element 25 and the measurement probe 15 in contact with the terminal electrodes 5 and 6, the terminal electrodes 5 and 6 are heated to a temperature equal to or higher than the Curie temperature of the dielectric material, and the heating element 25 and the measurement probe 15 are connected to the terminal electrode. The insulation resistance IR of the object to be inspected 7 is measured by energizing the measurement probe 15 while being in contact with the electrodes 5 and 6. Thereby, it is not necessary to make the heat generating body 25 and the measurement probe 15 contact alternately, and the heating of the terminal electrodes 5 and 6 and the measurement of the insulation resistance IR can be performed more simply.

  The preferred embodiments of the present invention have been described above. However, the present invention is not necessarily limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention.

  In the first and second embodiments, the method for manufacturing a multilayer ceramic capacitor has been described as an example of an electronic component. However, the method is not particularly limited as long as the electronic component uses a dielectric material having an electrostrictive effect. It can also be applied as a method for manufacturing a laminated actuator or the like.

  In 1st and 2nd embodiment, it can apply also to the manufacturing method of a multilayer feedthrough capacitor as a manufacturing method of a multilayer ceramic capacitor. In this case, the energization probe 13 is brought into contact with at least one of the signal terminal electrode and the ground terminal electrode, and the measurement probe 15 is brought into contact with the signal terminal electrode and the ground terminal electrode, respectively. The heating element 25 is brought into contact with any one of the signal terminal electrode and the ground terminal electrode.

  In the first and second embodiments, in the insulation resistance inspection process, the terminal electrodes 5 and 6 are heated or heated so that the terminal electrodes 5 and 6 have a temperature equal to or higher than the Curie temperature of the dielectric material. In the inspection step (for example, withstand voltage inspection step), the terminal electrodes 5 and 6 may be heated or heated to inspect the terminal electrodes 5 and 6 at a temperature equal to or higher than the Curie temperature of the dielectric material.

It is sectional drawing which shows an example of the multilayer ceramic capacitor to which the manufacturing method concerning 1st Embodiment is applied. It is a figure which shows the flow of the manufacturing method of the multilayer ceramic capacitor which concerns on 1st Embodiment. It is a figure which shows the outline of the measuring apparatus in the insulation resistance test process in the manufacturing method of the multilayer ceramic capacitor which concerns on 1st Embodiment. It is a figure which shows the outline of the measuring apparatus in the insulation resistance test process in the manufacturing method of the multilayer ceramic capacitor which concerns on 1st Embodiment. It is a figure which shows the outline of the measuring apparatus in the insulation resistance test process in the modification of the manufacturing method of the multilayer ceramic capacitor which concerns on 1st Embodiment. It is sectional drawing which shows an example of the multilayer ceramic capacitor to which the manufacturing method concerning 1st Embodiment is applied. It is a figure which shows the outline of the measuring apparatus in the insulation resistance test process in the manufacturing method of the multilayer ceramic capacitor which concerns on 2nd Embodiment. It is a figure which shows the outline of the measuring apparatus in the insulation resistance test process in the modification of the manufacturing method of the multilayer ceramic capacitor which concerns on 2nd Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Multilayer ceramic capacitor, 2 ... Dielectric layer, 3 ... Internal electrode layer, 4 ... Laminated body, 5, 6 ... Terminal electrode, 5a, 6a ... 1st electrode layer, 5b, 6b ... 2nd electrode layer, 7 ... object to be inspected, 11, 17, 19 ... DC power supply, 13 ... energizing probe, 15 ... measuring probe, 21 ... measuring instrument, 25 ... heating element.

Claims (7)

A method of manufacturing an electronic component comprising: an element body including a dielectric material; and a terminal electrode disposed on an outer surface of the element body,
A step of heating the terminal electrode to a temperature equal to or higher than the Curie temperature of the dielectric material by bringing an energizing probe into contact with the terminal electrode and energizing the energizing probe;
In a state where the terminal electrode is at a temperature equal to or higher than the Curie temperature of the dielectric material, the measurement probe is brought into contact with the terminal electrode, and the measurement probe is energized to measure the electrical characteristics of the electronic component, And a step of determining the quality of the electronic component based on the electrical characteristics. By energizing the energization probe in a state where the energization probe and the measurement probe are in contact with the terminal electrode, the terminal electrode is heated to a temperature equal to or higher than the Curie temperature of the dielectric material,
2. The electronic component according to claim 1, wherein electrical characteristics of the electronic component are measured by energizing the measurement probe in a state where the energization probe and the measurement probe are in contact with the terminal electrode. Manufacturing method.   3. The electronic component according to claim 1, wherein the terminal electrode includes a first electrode layer and a second electrode layer having an electric resistance higher than that of the first electrode layer. Production method. A method of manufacturing an electronic component comprising: an element body including a dielectric material; and a terminal electrode disposed on an outer surface of the element body,
Heating the terminal electrode to a temperature equal to or higher than the Curie temperature of the dielectric material by bringing a heating element into contact with the terminal electrode;
In a state where the terminal electrode is at a temperature equal to or higher than the Curie temperature of the dielectric material, the measurement probe is brought into contact with the terminal electrode, and the measurement probe is energized to measure the electrical characteristics of the electronic component, And a step of determining the quality of the electronic component based on the electrical characteristics. Heating the terminal electrode to a temperature equal to or higher than the Curie temperature of the dielectric material in a state where the heating element and the measurement probe are in contact with the terminal electrode;
5. The electronic component manufacturing method according to claim 4, wherein electrical characteristics of the electronic component are measured by energizing the measurement probe in a state where the energization probe and the measurement probe are in contact with the terminal electrode. Method.   The method for manufacturing an electronic component according to claim 1, wherein an insulation resistance is measured as the electrical characteristic. A method of manufacturing an electronic component comprising: an element body including a dielectric material; and a terminal electrode disposed on an outer surface of the element body,
Heating the terminal electrode to a temperature equal to or higher than the Curie temperature of the dielectric material by energizing the terminal electrode;
Measuring the electrical characteristics of the electronic component in a state where the terminal electrode is at a temperature equal to or higher than the Curie temperature of the dielectric material, and determining the quality of the electronic component based on the electrical characteristics. An electronic component manufacturing method characterized by the above.

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