JP4845749B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP4845749B2 JP4845749B2 JP2007007535A JP2007007535A JP4845749B2 JP 4845749 B2 JP4845749 B2 JP 4845749B2 JP 2007007535 A JP2007007535 A JP 2007007535A JP 2007007535 A JP2007007535 A JP 2007007535A JP 4845749 B2 JP4845749 B2 JP 4845749B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- wiring
- active matrix
- matrix substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 238
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010408 film Substances 0.000 description 111
- 239000011159 matrix material Substances 0.000 description 106
- 239000004973 liquid crystal related substance Substances 0.000 description 63
- 238000000034 method Methods 0.000 description 41
- 239000000463 material Substances 0.000 description 40
- 239000004065 semiconductor Substances 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000000565 sealant Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007007535A JP4845749B2 (ja) | 2006-01-31 | 2007-01-17 | 表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006021722 | 2006-01-31 | ||
| JP2006021722 | 2006-01-31 | ||
| JP2007007535A JP4845749B2 (ja) | 2006-01-31 | 2007-01-17 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007233349A JP2007233349A (ja) | 2007-09-13 |
| JP2007233349A5 JP2007233349A5 (enExample) | 2009-12-24 |
| JP4845749B2 true JP4845749B2 (ja) | 2011-12-28 |
Family
ID=38553947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007007535A Expired - Fee Related JP4845749B2 (ja) | 2006-01-31 | 2007-01-17 | 表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4845749B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9501960B2 (en) | 2012-09-19 | 2016-11-22 | Samsung Display Co., Ltd. | Display panel |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5577646B2 (ja) * | 2009-01-09 | 2014-08-27 | セイコーエプソン株式会社 | 電気泳動表示装置、電子機器、電気泳動表示装置の製造方法 |
| JP2011048012A (ja) * | 2009-08-25 | 2011-03-10 | Citizen Finetech Miyota Co Ltd | 液晶表示素子 |
| US9894781B2 (en) | 2012-06-06 | 2018-02-13 | Apple Inc. | Notched display layers |
| CN104916252B (zh) * | 2015-07-13 | 2017-08-25 | 京东方科技集团股份有限公司 | 圆形显示面板及其制作方法、显示装置 |
| KR102525521B1 (ko) | 2016-03-18 | 2023-04-25 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
| KR102369938B1 (ko) * | 2017-08-22 | 2022-03-03 | 삼성디스플레이 주식회사 | 표시 장치 |
| TWI727813B (zh) * | 2020-05-27 | 2021-05-11 | 富元精密科技股份有限公司 | 發光二極體玻璃基板結構 |
| JP7135029B2 (ja) * | 2020-06-30 | 2022-09-12 | キヤノン株式会社 | 表示装置、モジュールおよび機器 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4408192B2 (ja) * | 2002-07-26 | 2010-02-03 | シャープ株式会社 | 液晶表示装置用基板及びそれを備えた液晶表示装置及びその製造方法 |
-
2007
- 2007-01-17 JP JP2007007535A patent/JP4845749B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9501960B2 (en) | 2012-09-19 | 2016-11-22 | Samsung Display Co., Ltd. | Display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007233349A (ja) | 2007-09-13 |
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