JP4843716B2 - 適応サブバンド先行歪み器を使ったrf電力増幅器の線形化 - Google Patents
適応サブバンド先行歪み器を使ったrf電力増幅器の線形化 Download PDFInfo
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- JP4843716B2 JP4843716B2 JP2009551021A JP2009551021A JP4843716B2 JP 4843716 B2 JP4843716 B2 JP 4843716B2 JP 2009551021 A JP2009551021 A JP 2009551021A JP 2009551021 A JP2009551021 A JP 2009551021A JP 4843716 B2 JP4843716 B2 JP 4843716B2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
- H03F1/3247—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using feedback acting on predistortion circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
- H03F1/3294—Acting on the real and imaginary components of the input signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
Description
ここで図1Bを参照すると、RF電力増幅器システム100のもう少し詳細なブロック図が示されている。RF電力増幅器システム100は、しばしばデジタル・プロセスとともに使用される普通のIQ変調技法を使う。IQ変調方式が使われるとき、「I」項は波形の「同相(in-phase)」成分を指し、「Q」項は直交(quadrature)成分を表す。IQ変調は当技術分野においてよく知られているので、ここで詳細に述べることはしない。
(t)および位相角Φ(t)の値とは若干異なるであろうことは認識されるであろう。振幅A′(t)および位相角Φ′(t)は振幅/位相‐I/Q(極‐直交)変換器214に伝えられる。A/P‐I/Q変換器214はその振幅および位相情報を使って、対応するI′およびQ′の値を計算する。A/P‐I/Q変換器は当技術分野においてよく知られており、したがってここで詳細に述べることはしない。あるいはまた、I/Q信号が、直交混合器および局部発振器の使用によって直接的に構築されてもよかった。こうして、本発明はA/P‐I/Q変換器214、振幅検出器210または位相検出器212の使用に限定されるものではないことは理解しておくべきである。
Claims (5)
- RF電力増幅器における増幅に先立って入力信号を事前に歪ませる方法であって:
複数のサブバンド信号を単離するステップであって、各サブバンド信号は、前記入力信号の帯域幅内の異なる所定の周波数帯域内に含まれる前記入力信号の部分を含む、ステップと;
閉ループ重み摂動式勾配追跡アルゴリズムを含む適応的プロセスにおいて、適応的に、各サブバンド信号の線形補正のために第一の組の重みを計算し、各サブバンド信号の非線形補正のために第二の組の重みを計算するステップと;
前記複数のサブバンド信号のそれぞれの振幅および位相のうちの少なくとも一つを、前記第一および第二の組の重みを使って独立して修正するステップと;
前記修正するステップののち、前記サブバンド信号のそれぞれを合計して事前に歪まされた入力信号を得るステップとを有する、
方法。 - 前記非線形補正を、振幅変調‐振幅変調(AM‐AM)型の増幅器歪みおよび振幅変調‐位相変調(AM‐PM)型の歪みうちの少なくとも一つを補償する先行歪みを含むよう選択することをさらに含む、請求項1記載の方法。
- 前記修正するステップが、前記複数のサブバンド信号のそれぞれの前記振幅および前記位相を修正することを含む、請求項1記載の方法。
- 前記単離するステップが、各サブバンド信号の中心周波数をフィルタの通過帯域と一致するよう選択的にシフトさせることを含む、請求項1記載の方法。
- RF電力増幅器において入力信号を増幅に先立って事前に歪ませるシステムであって:
複数のサブバンド・チャネルをもつサブバンド単離器を有し、各サブバンド・チャネルは複数のサブバンド信号の一つを単離するよう構成されており、各サブバンド信号は、前記入力信号の帯域幅の範囲内の異なる所定の周波数帯域に含まれる前記入力信号の一部を含み;
前記サブバンド・チャネルのそれぞれはさらに、少なくとも一つの信号重み付け装置を有し、各信号重み付け装置は、前記複数のサブバンド信号のそれぞれの、振幅および位相のうちの少なくとも一つを独立して修正するための割り当てられた重みに応答し;
当該システムはさらに:
閉ループ重み摂動式勾配追跡アルゴリズムを含む適応的プロセスを使って前記重みを計算するために誤差信号に応答する適応的コントローラと;
各サブバンド信号の線形補正のために前記重みのうちの第一の組を計算し、各サブバンド信号の非線形補正のために前記重みのうちの第二の組を計算するよう構成された適応的プロセッサと;
修正するステップ後に各サブバンド信号を合計して事前に歪まされた入力信号を得る合計手段とを有する、
システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/678,847 US8019015B2 (en) | 2007-02-26 | 2007-02-26 | Linearization of RF power amplifiers using an adaptive subband predistorter |
US11/678,847 | 2007-02-26 | ||
PCT/US2008/054637 WO2008106364A1 (en) | 2007-02-26 | 2008-02-22 | Linearization of rf power amplifiers using an adaptive subband predistorter |
Publications (2)
Publication Number | Publication Date |
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JP2010519862A JP2010519862A (ja) | 2010-06-03 |
JP4843716B2 true JP4843716B2 (ja) | 2011-12-21 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009551021A Expired - Fee Related JP4843716B2 (ja) | 2007-02-26 | 2008-02-22 | 適応サブバンド先行歪み器を使ったrf電力増幅器の線形化 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8019015B2 (ja) |
EP (1) | EP2130296B1 (ja) |
JP (1) | JP4843716B2 (ja) |
KR (1) | KR101077349B1 (ja) |
CA (1) | CA2679114C (ja) |
TW (1) | TWI353107B (ja) |
WO (1) | WO2008106364A1 (ja) |
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2007
- 2007-02-26 US US11/678,847 patent/US8019015B2/en active Active
-
2008
- 2008-02-22 KR KR1020097019767A patent/KR101077349B1/ko active IP Right Grant
- 2008-02-22 JP JP2009551021A patent/JP4843716B2/ja not_active Expired - Fee Related
- 2008-02-22 WO PCT/US2008/054637 patent/WO2008106364A1/en active Application Filing
- 2008-02-22 CA CA2679114A patent/CA2679114C/en not_active Expired - Fee Related
- 2008-02-22 EP EP08730442.4A patent/EP2130296B1/en active Active
- 2008-02-25 TW TW097106474A patent/TWI353107B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8436708B2 (en) | 2007-12-25 | 2013-05-07 | Hitachi Metals, Ltd. | Multilayer inductor and power converter comprising it |
Also Published As
Publication number | Publication date |
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KR101077349B1 (ko) | 2011-10-26 |
CA2679114C (en) | 2012-10-30 |
JP2010519862A (ja) | 2010-06-03 |
US8019015B2 (en) | 2011-09-13 |
EP2130296A1 (en) | 2009-12-09 |
CA2679114A1 (en) | 2008-09-04 |
TWI353107B (en) | 2011-11-21 |
KR20090112767A (ko) | 2009-10-28 |
WO2008106364A1 (en) | 2008-09-04 |
TW200901618A (en) | 2009-01-01 |
US20080211576A1 (en) | 2008-09-04 |
EP2130296B1 (en) | 2013-11-06 |
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