JP4838609B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4838609B2 JP4838609B2 JP2006079062A JP2006079062A JP4838609B2 JP 4838609 B2 JP4838609 B2 JP 4838609B2 JP 2006079062 A JP2006079062 A JP 2006079062A JP 2006079062 A JP2006079062 A JP 2006079062A JP 4838609 B2 JP4838609 B2 JP 4838609B2
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Description
[半導体装置]
本発明による半導体装置の例として、固体撮像装置を掲げて説明する。
本発明の第1の実施形態に係る固体撮像装置について、図4乃至図6を参照して説明する。ここで、図4は、本発明の第1の実施形態に係る固体撮像装置の断面図であり、図5は、図4に示す固体撮像装置の平面図である。図4は、図5の線X−Xにおける断面図である。また、図6は、図4に示す固体撮像装置において、透明部材のクラックの進行が溝部により阻害されている状態を示す断面図である。
次に、本発明の第2の実施形態に係る固体撮像装置について、図7及び図8を参照して説明する。ここで、図7は、本発明の第2の実施形態に係る固体撮像装置の断面図であり、図8は、図7に示す固体撮像装置において、透明部材のクラックの進行が溝部により阻害されている状態を示す断面図である。なお、以下の説明に於いて、図4乃至図6を参照して説明した部分と同じ部分には同じ符号を付し、その説明を省略する。
次に、本発明の第3の実施形態に係る固体撮像装置について、図9及び図10を参照して説明する。ここで、図9は、本発明の第3の実施形態に係る固体撮像装置の断面図であり、図10は、図9に示す固体撮像装置において、透明部材のクラックの進行が溝部により阻害されている状態を示す断面図である。なお、以下の説明に於いて、図4乃至図6を参照して説明した部分と同じ部分には同じ符号を付し、その説明を省略する。
[半導体装置の製造方法]
次に、上述の固体撮像装置の製造方法を説明する。
上述の固体撮像装置20、30及び40の製造方法の第1例について、図11乃至図14を参照して説明する。ここで、図11乃至図14は、本発明の実施の形態に係る固体撮像装置の製造方法の第1の例を説明するための図(その1)乃至(その4)である。以下では、固体撮像装置20の製造方法の例を説明する。
上述の固体撮像装置20、30及び40の製造方法の第1の例では、切削ブレード50を用いて透明基板210に溝部26を形成していたが、第2の例ではエッチングにより溝部26を形成する。これについて、図15を参照して説明する。ここで、図15は、本発明の実施の形態に係る固体撮像装置の製造方法の第2の例を説明するための図である。
(付記1) 上面に撮像領域が形成された半導体素子と、
前記半導体素子から所定長さ離間して対向して設けられた透明部材と、
前記半導体素子の端部と前記透明部材の端面を封止する封止部材と、
を備えた半導体装置において、
前記透明部材の、前記半導体素子の前記撮像領域の外縁に対応する箇所よりも端面側の箇所に、溝部が形成されていることを特徴とする半導体装置。
(付記2) 付記1記載の半導体装置であって、
前記溝部の断面は、底面が平面で側面が前記底面から略垂直の方向に形成された形状であることを特徴とする半導体装置。
(付記3) 付記2記載の半導体装置であって、
前記溝部の、前記透明部材の中心側に位置する側面が、前記半導体素子の前記撮像領域の外縁と同じ位置又は外側に位置していることを特徴とする半導体装置。
(付記4) 付記2又は3記載の半導体装置であって、
前記溝部の幅は、約0.05乃至0.2mmであることを特徴とする半導体装置。
(付記5) 付記1記載の半導体装置であって、
前記溝部の断面は、略V字形状を有することを特徴とする半導体装置。
(付記6) 付記5記載の半導体装置であって、
前記V字形状の断面を形成する前記溝部の側面のうち前記透明部材の中心側に位置する側面と前記透明部材の主面とが接している部分が、前記半導体素子の前記撮像領域の外縁と同じ位置又は外側に位置していることを特徴とする半導体装置。
(付記7) 付記1記載の半導体装置であって
前記溝部の断面は、底面部分が湾曲面を有し、側面が前記底面から略垂直の方向に形成された略U字形状を有することを特徴とする半導体装置。
(付記8) 付記7記載の半導体装置であって、
前記略U字形状の断面を形成する前記溝部の側面のうち前記透明部材の中心側に位置する側面と前記透明部材の主面とが接している部分が、前記半導体素子の前記撮像領域の外縁と同じ位置又は外側に位置していることを特徴とする半導体装置。
(付記9) 付記1乃至8いずれか一項記載の半導体装置であって、
前記溝部の深さは、前記透明部材の厚さの略50乃至90%であることを特徴とする半導体装置。
(付記10) 付記1乃至9いずれか一項記載の半導体装置であって、
前記溝部は、前記透明部材の主面の四辺近傍において、当該四辺に沿って1本ずつ形成されていることを特徴とする半導体装置。
(付記11) 付記1乃至9いずれか一項記載の半導体装置であって、
前記溝部は、前記透明部材の主面の四辺近傍において、当該四辺に沿って複数形成されていることを特徴とする半導体装置。
(付記12) 付記1乃至11いずれか一項記載の半導体装置であって、
前記溝部は切削ブレードを用いた切り込みにより形成され、前記溝部の断面は前記切削ブレードの断面形状に対応した形状であることを特徴とする半導体装置。
(付記13) 付記1乃至11いずれか一項記載の半導体装置であって、
前記溝部は、前記透明部材のエッチングにより形成されることを特徴とする半導体装置。
21、31、41 透明部材
25 封止樹脂
26、36、46 溝部
26−1、36−1、46−1 溝部の側面
28 固体撮像素子
29 撮像領域
50 切削ブレード
60 レジスト
61 エッチング液
Claims (10)
- 上面に撮像領域が形成された半導体素子と、
前記半導体素子から所定長さ離間して対向して設けられた透明部材と、
前記半導体素子の端部と前記透明部材の端面を封止する封止樹脂と、
を備えた半導体装置において、
前記透明部材の、前記半導体素子の前記撮像領域の外縁に対応する箇所よりも端面側の箇所に、溝部が形成されていることを特徴とする半導体装置。 - 請求項1記載の半導体装置であって、
前記溝部の断面は、底面が平面で側面が前記底面から略垂直の方向に形成された形状であることを特徴とする半導体装置。 - 請求項2記載の半導体装置であって、
前記溝部の、前記透明部材の中心側に位置する側面が、前記半導体素子の前記撮像領域の外縁と同じ位置又は外側に位置していることを特徴とする半導体装置。 - 請求項2又は3記載の半導体装置であって、
前記溝部の幅は、約0.05乃至0.2mmであることを特徴とする半導体装置。 - 請求項1記載の半導体装置であって、
前記溝部の断面は、略V字形状を有することを特徴とする半導体装置。 - 請求項5記載の半導体装置であって、
前記V字形状の断面を形成する前記溝部の側面のうち前記透明部材の中心側に位置する側面と前記透明部材の主面とが接している部分が、前記半導体素子の前記撮像領域の外縁と同じ位置又は外側に位置していることを特徴とする半導体装置。 - 請求項1記載の半導体装置であって
前記溝部の断面は、底面部分が湾曲面を有し、側面が前記底面から略垂直の方向に形成された略U字形状を有することを特徴とする半導体装置。 - 請求項7記載の半導体装置であって、
前記略U字形状の断面を形成する前記溝部の側面のうち前記透明部材の中心側に位置する側面と前記透明部材の主面とが接している部分が、前記半導体素子の前記撮像領域の外縁と同じ位置又は外側に位置していることを特徴とする半導体装置。 - 請求項1乃至8いずれか一項記載の半導体装置であって、
前記溝部の深さは、前記透明部材の厚さの略50乃至90%であることを特徴とする半導体装置。 - 請求項1乃至9いずれか一項記載の半導体装置であって、
前記溝部は、前記透明部材の主面の四辺近傍において、当該四辺に沿って1本ずつ形成されていることを特徴とする半導体装置。
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JP2006079062A JP4838609B2 (ja) | 2006-03-22 | 2006-03-22 | 半導体装置 |
US11/500,439 US20070222875A1 (en) | 2006-03-22 | 2006-08-08 | Semiconductor device |
TW095129196A TWI340462B (en) | 2006-03-22 | 2006-08-09 | Semiconductor device |
CN2006101257314A CN101043042B (zh) | 2006-03-22 | 2006-08-29 | 半导体装置 |
KR1020060085022A KR100824514B1 (ko) | 2006-03-22 | 2006-09-05 | 반도체 장치 |
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US7873760B2 (en) * | 2005-11-11 | 2011-01-18 | Versteeg William C | Expedited digital signal decoding |
JP2013055160A (ja) * | 2011-09-01 | 2013-03-21 | Canon Inc | 光透過性部材、光学装置およびそれらの製造方法 |
JP2013143520A (ja) * | 2012-01-12 | 2013-07-22 | Sony Corp | 撮像装置および撮像装置の製造方法 |
JP2014045142A (ja) * | 2012-08-28 | 2014-03-13 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
US9608029B2 (en) * | 2013-06-28 | 2017-03-28 | Stmicroelectronics Pte Ltd. | Optical package with recess in transparent cover |
US10976205B2 (en) * | 2015-09-30 | 2021-04-13 | Hitachi Automotive Systems, Ltd. | Dynamic quantity measuring apparatus having a strain sensor disposed in a groove |
KR102334464B1 (ko) * | 2017-04-12 | 2021-12-02 | 닝보 써니 오포테크 코., 엘티디. | 카메라 모듈, 이의 성형된 감광성 어셈블리 및 제조 방법, 그리고 전자 장치 |
CN107968908A (zh) * | 2017-12-19 | 2018-04-27 | 广东欧珀移动通信有限公司 | 摄像头及具有其的电子设备 |
US11011576B2 (en) * | 2018-06-28 | 2021-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Resistive random access memory device |
WO2020055511A1 (en) * | 2018-09-14 | 2020-03-19 | Gopro, Inc. | Electrical connectivity between detachable components |
CN111131663B (zh) * | 2018-10-31 | 2021-12-24 | 中芯集成电路(宁波)有限公司 | 感光组件及其形成方法、镜头模组、电子设备 |
CN110797450A (zh) * | 2019-10-29 | 2020-02-14 | 长春希龙显示技术有限公司 | 基于模压技术的表面一致性封装led显示单元 |
JP2022189647A (ja) * | 2021-06-11 | 2022-12-22 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
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US6492699B1 (en) * | 2000-05-22 | 2002-12-10 | Amkor Technology, Inc. | Image sensor package having sealed cavity over active area |
JP4313503B2 (ja) * | 2000-06-29 | 2009-08-12 | 京セラ株式会社 | 半導体装置 |
US8629346B2 (en) * | 2002-10-03 | 2014-01-14 | Fujikura Ltd. | Electrode substrate, photoelectric conversion element, conductive glass substrate and production method thereof, and pigment sensitizing solar cell |
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US7476955B2 (en) * | 2004-01-06 | 2009-01-13 | Micron Technology, Inc. | Die package having an adhesive flow restriction area |
US7129149B1 (en) * | 2004-06-07 | 2006-10-31 | Integrated Device Technology, Inc. | Method for forming shallow trench isolation structure with anti-reflective liner |
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TWI340462B (en) | 2011-04-11 |
KR20070095742A (ko) | 2007-10-01 |
TW200737504A (en) | 2007-10-01 |
JP2007258936A (ja) | 2007-10-04 |
KR100824514B1 (ko) | 2008-04-22 |
CN101043042A (zh) | 2007-09-26 |
CN101043042B (zh) | 2012-08-22 |
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