JP4836339B2 - 半導体表示装置及びその作製方法 - Google Patents

半導体表示装置及びその作製方法 Download PDF

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Publication number
JP4836339B2
JP4836339B2 JP2001059927A JP2001059927A JP4836339B2 JP 4836339 B2 JP4836339 B2 JP 4836339B2 JP 2001059927 A JP2001059927 A JP 2001059927A JP 2001059927 A JP2001059927 A JP 2001059927A JP 4836339 B2 JP4836339 B2 JP 4836339B2
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gate electrode
region
insulating film
contact
semiconductor layer
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JP2001059927A
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Japanese (ja)
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JP2001326362A5 (https=
JP2001326362A (ja
Inventor
舜平 山崎
潤 小山
英臣 須沢
幸治 小野
達也 荒尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2001326362A5 publication Critical patent/JP2001326362A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001059927A 2000-03-06 2001-03-05 半導体表示装置及びその作製方法 Expired - Fee Related JP4836339B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001059927A JP4836339B2 (ja) 2000-03-06 2001-03-05 半導体表示装置及びその作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000060206 2000-03-06
JP2000060206 2000-03-06
JP2000-60206 2000-03-06
JP2001059927A JP4836339B2 (ja) 2000-03-06 2001-03-05 半導体表示装置及びその作製方法

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JP2001326362A JP2001326362A (ja) 2001-11-22
JP2001326362A5 JP2001326362A5 (https=) 2008-04-03
JP4836339B2 true JP4836339B2 (ja) 2011-12-14

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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4265210B2 (ja) * 2001-12-17 2009-05-20 セイコーエプソン株式会社 有機ｅｌ装置及び電子機器
CN1209662C (zh) * 2001-12-17 2005-07-06 精工爱普生株式会社 显示装置及电子机器
SG126714A1 (en) * 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
KR20030086166A (ko) 2002-05-03 2003-11-07 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
TWI272556B (en) 2002-05-13 2007-02-01 Semiconductor Energy Lab Display device
JP4689155B2 (ja) * 2002-08-29 2011-05-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4689188B2 (ja) * 2003-04-25 2011-05-25 株式会社半導体エネルギー研究所 表示装置
US7250720B2 (en) 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device
KR100601370B1 (ko) 2004-04-28 2006-07-13 삼성에스디아이 주식회사 박막 트랜지스터 및 그를 이용한 유기 전계 발광 표시 장치
KR100611652B1 (ko) * 2004-06-28 2006-08-11 삼성에스디아이 주식회사 유기 전계 발광 표시 소자 및 그 제조방법
JP5238125B2 (ja) * 2004-11-04 2013-07-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20060104531A (ko) 2005-03-30 2006-10-09 삼성에스디아이 주식회사 발광표시장치의 제조방법
JP5408856B2 (ja) * 2007-08-30 2014-02-05 キヤノン株式会社 有機ｅｌ表示装置
KR101259727B1 (ko) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2450869B1 (en) 2009-07-01 2018-11-28 Sharp Kabushiki Kaisha Active matrix substrate and organic el display device
JP2012014868A (ja) 2010-06-29 2012-01-19 Sony Corp 表示装置
KR101737865B1 (ko) * 2014-07-30 2017-05-22 엘지디스플레이 주식회사 유기발광표시패널
US9472605B2 (en) * 2014-11-17 2016-10-18 Apple Inc. Organic light-emitting diode display with enhanced aperture ratio
CN111092106B (zh) * 2019-11-28 2022-07-08 云谷（固安）科技有限公司 一种显示面板及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274336A (ja) * 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JP4030193B2 (ja) * 1998-07-16 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法

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