JP4836339B2 - 半導体表示装置及びその作製方法 - Google Patents

半導体表示装置及びその作製方法 Download PDF

Info

Publication number
JP4836339B2
JP4836339B2 JP2001059927A JP2001059927A JP4836339B2 JP 4836339 B2 JP4836339 B2 JP 4836339B2 JP 2001059927 A JP2001059927 A JP 2001059927A JP 2001059927 A JP2001059927 A JP 2001059927A JP 4836339 B2 JP4836339 B2 JP 4836339B2
Authority
JP
Japan
Prior art keywords
gate electrode
region
insulating film
contact
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001059927A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001326362A (ja
JP2001326362A5 (enExample
Inventor
舜平 山崎
潤 小山
英臣 須沢
幸治 小野
達也 荒尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001059927A priority Critical patent/JP4836339B2/ja
Publication of JP2001326362A publication Critical patent/JP2001326362A/ja
Publication of JP2001326362A5 publication Critical patent/JP2001326362A5/ja
Application granted granted Critical
Publication of JP4836339B2 publication Critical patent/JP4836339B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001059927A 2000-03-06 2001-03-05 半導体表示装置及びその作製方法 Expired - Fee Related JP4836339B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001059927A JP4836339B2 (ja) 2000-03-06 2001-03-05 半導体表示装置及びその作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000060206 2000-03-06
JP2000-60206 2000-03-06
JP2000060206 2000-03-06
JP2001059927A JP4836339B2 (ja) 2000-03-06 2001-03-05 半導体表示装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2001326362A JP2001326362A (ja) 2001-11-22
JP2001326362A5 JP2001326362A5 (enExample) 2008-04-03
JP4836339B2 true JP4836339B2 (ja) 2011-12-14

Family

ID=26586832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001059927A Expired - Fee Related JP4836339B2 (ja) 2000-03-06 2001-03-05 半導体表示装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP4836339B2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1209662C (zh) * 2001-12-17 2005-07-06 精工爱普生株式会社 显示装置及电子机器
JP4265210B2 (ja) * 2001-12-17 2009-05-20 セイコーエプソン株式会社 有機ｅｌ装置及び電子機器
SG126714A1 (en) * 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
KR20030086166A (ko) * 2002-05-03 2003-11-07 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
TWI272556B (en) 2002-05-13 2007-02-01 Semiconductor Energy Lab Display device
JP4689155B2 (ja) * 2002-08-29 2011-05-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4689188B2 (ja) * 2003-04-25 2011-05-25 株式会社半導体エネルギー研究所 表示装置
US7250720B2 (en) 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device
KR100601370B1 (ko) 2004-04-28 2006-07-13 삼성에스디아이 주식회사 박막 트랜지스터 및 그를 이용한 유기 전계 발광 표시 장치
KR100611652B1 (ko) * 2004-06-28 2006-08-11 삼성에스디아이 주식회사 유기 전계 발광 표시 소자 및 그 제조방법
JP5238125B2 (ja) * 2004-11-04 2013-07-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20060104531A (ko) 2005-03-30 2006-10-09 삼성에스디아이 주식회사 발광표시장치의 제조방법
JP5408856B2 (ja) * 2007-08-30 2014-02-05 キヤノン株式会社 有機ｅｌ表示装置
CN102509736B (zh) 2008-10-24 2015-08-19 株式会社半导体能源研究所 半导体器件和用于制造该半导体器件的方法
WO2011001728A1 (ja) * 2009-07-01 2011-01-06 シャープ株式会社 アクティブマトリクス基板及び有機ｅｌ表示装置
JP2012014868A (ja) 2010-06-29 2012-01-19 Sony Corp 表示装置
KR101737865B1 (ko) * 2014-07-30 2017-05-22 엘지디스플레이 주식회사 유기발광표시패널
US9472605B2 (en) * 2014-11-17 2016-10-18 Apple Inc. Organic light-emitting diode display with enhanced aperture ratio
CN111092106B (zh) * 2019-11-28 2022-07-08 云谷（固安）科技有限公司 一种显示面板及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274336A (ja) * 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JP4030193B2 (ja) * 1998-07-16 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2001326362A (ja) 2001-11-22

Similar Documents

Publication Publication Date Title
KR100767612B1 (ko) 반도체 장치 및 제조 방법
JP6345837B2 (ja) Ｅｌ表示装置
JP4836339B2 (ja) 半導体表示装置及びその作製方法
JP4550162B2 (ja) 発光装置の作製方法
JP4993826B2 (ja) 半導体装置の作製方法
JP5577384B2 (ja) 半導体装置の作製方法
JP3983625B2 (ja) 発光装置
JP4817535B2 (ja) トランジスタの作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080218

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110428

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110510

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110524

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110920

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110927

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141007

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141007

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees