JP4829480B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4829480B2
JP4829480B2 JP2004139765A JP2004139765A JP4829480B2 JP 4829480 B2 JP4829480 B2 JP 4829480B2 JP 2004139765 A JP2004139765 A JP 2004139765A JP 2004139765 A JP2004139765 A JP 2004139765A JP 4829480 B2 JP4829480 B2 JP 4829480B2
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JP
Japan
Prior art keywords
current
region
chip
sense
current sense
Prior art date
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Expired - Fee Related
Application number
JP2004139765A
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English (en)
Japanese (ja)
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JP2005322781A (ja
JP2005322781A5 (https=
Inventor
秀樹 春口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2004139765A priority Critical patent/JP4829480B2/ja
Publication of JP2005322781A publication Critical patent/JP2005322781A/ja
Publication of JP2005322781A5 publication Critical patent/JP2005322781A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

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  • Semiconductor Integrated Circuits (AREA)
JP2004139765A 2004-05-10 2004-05-10 半導体装置 Expired - Fee Related JP4829480B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004139765A JP4829480B2 (ja) 2004-05-10 2004-05-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004139765A JP4829480B2 (ja) 2004-05-10 2004-05-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2005322781A JP2005322781A (ja) 2005-11-17
JP2005322781A5 JP2005322781A5 (https=) 2006-10-26
JP4829480B2 true JP4829480B2 (ja) 2011-12-07

Family

ID=35469827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004139765A Expired - Fee Related JP4829480B2 (ja) 2004-05-10 2004-05-10 半導体装置

Country Status (1)

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JP (1) JP4829480B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5410649B2 (ja) * 2006-04-05 2014-02-05 株式会社豊田中央研究所 Ｍｏｓ型半導体装置
WO2010109596A1 (ja) 2009-03-24 2010-09-30 トヨタ自動車株式会社 半導体装置
WO2012029652A1 (ja) 2010-09-03 2012-03-08 三菱電機株式会社 半導体装置
JP5694119B2 (ja) * 2010-11-25 2015-04-01 三菱電機株式会社 炭化珪素半導体装置
JP5649478B2 (ja) * 2011-02-16 2015-01-07 三菱電機株式会社 半導体装置及びその試験方法
JP5659897B2 (ja) * 2011-03-22 2015-01-28 トヨタ自動車株式会社 半導体装置と制御手段とを備えるシステム、及び、半導体装置を流れる電流の制御方法
JP5706251B2 (ja) 2011-06-30 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
DE102012202180A1 (de) * 2012-02-14 2013-08-14 Robert Bosch Gmbh Halbleiteranordnung für einen Stromsensor in einem Leistungshalbleiter
JP6896646B2 (ja) * 2015-12-18 2021-06-30 ローム株式会社 半導体装置
JP2023131415A (ja) * 2022-03-09 2023-09-22 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3204227B2 (ja) * 1985-11-29 2001-09-04 株式会社デンソー 半導体装置
JPH045828A (ja) * 1990-04-23 1992-01-09 Nec Corp 半導体装置
JP3338185B2 (ja) * 1994-08-02 2002-10-28 株式会社東芝 半導体装置
EP0892435A1 (en) * 1997-07-14 1999-01-20 STMicroelectronics S.r.l. Integrated semiconductor transistor with current sensing
GB9818044D0 (en) * 1998-08-20 1998-10-14 Koninkl Philips Electronics Nv Power transistor device
JP5014534B2 (ja) * 2001-04-13 2012-08-29 オンセミコンダクター・トレーディング・リミテッド Ｍｏｓｆｅｔ

Also Published As

Publication number Publication date
JP2005322781A (ja) 2005-11-17

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