JP4825423B2 - プログラム可能な光選択アレイを有する暗視野検査システム - Google Patents
プログラム可能な光選択アレイを有する暗視野検査システム Download PDFInfo
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- JP4825423B2 JP4825423B2 JP2004569998A JP2004569998A JP4825423B2 JP 4825423 B2 JP4825423 B2 JP 4825423B2 JP 2004569998 A JP2004569998 A JP 2004569998A JP 2004569998 A JP2004569998 A JP 2004569998A JP 4825423 B2 JP4825423 B2 JP 4825423B2
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- 238000007689 inspection Methods 0.000 title claims description 38
- 230000007547 defect Effects 0.000 claims description 90
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- 238000012545 processing Methods 0.000 claims description 8
- 238000005211 surface analysis Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 66
- 238000003491 array Methods 0.000 description 28
- 238000000034 method Methods 0.000 description 25
- 230000003287 optical effect Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 12
- 238000005286 illumination Methods 0.000 description 10
- 238000000149 argon plasma sintering Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
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- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
ここに記載される本発明は、大きくは、表面検査および試験に関する。具体的には、本発明は、無パターン半導体ウェーハ表面の暗視野検査の装置および方法に関する。
Claims (3)
- 表面検査装置であって、全体として、
光ビームをワークピース上に導くことによって、前記ワークピースの欠陥から散乱された光、および前記ワークピースの通常の散乱パターンにしたがって散乱された光を含む、空間分布を有する散乱された光のパターンを発生する照射源、
光を受け取り、前記光の2次元画像を捕捉し、前記2次元画像を電気信号に変換する光検出要素、
前記ワークピースから散乱された光を受け取るプログラム可能な光選択アレイであって、前記ワークピースの前記通常の散乱パターンの空間分布と空間的に関係する光が前記光検出要素によって受光されるのを防ぐように選択的に作動できる制御可能な光選択要素のアレイを含み、前記散乱された光を受け取ると同時に選択的に前記制御可能な光選択要素のアレイの一部を起動して、前記ワークピースの欠陥から散乱された前記光を含む前記ワークピースからの他の散乱光を前記光検出要素で検出するプログラム可能な光選択アレイ、および
前記光検出要素からの電気信号を受け取り、前記ワークピースの表面分析を行う処理回路
を備える装置。 - 請求項1に記載の装置であって、前記プログラム可能な光選択アレイの制御可能な光選択要素のアレイは、選択的にアクティベートされることによって、前記ワークピースの欠陥から散乱された前記光を前記光検出要素に導く反射器要素のアレイを備える装置。
- 請求項1に記載の装置であって、前記プログラム可能な光選択アレイの制御可能な光選択要素のアレイは、前記ワークピースの欠陥から散乱された前記光を前記光検出要素に導き、前記ワークピースの前記通常の散乱パターンが前記光検出要素に到達することを実質的に阻止するように、選択的にアクティベートされるフィルタ要素のアレイを備える装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48962103P | 2003-07-23 | 2003-07-23 | |
US60/489,621 | 2003-07-23 | ||
US10/714,257 US7002677B2 (en) | 2003-07-23 | 2003-11-14 | Darkfield inspection system having a programmable light selection array |
US10/714,257 | 2003-11-14 | ||
PCT/US2004/011127 WO2005017952A2 (en) | 2003-07-23 | 2004-04-09 | Darkfield inspection system having a programmable light selection array |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011162369A Division JP2011221041A (ja) | 2003-07-23 | 2011-07-25 | 表面検査装置およびその方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008519245A JP2008519245A (ja) | 2008-06-05 |
JP4825423B2 true JP4825423B2 (ja) | 2011-11-30 |
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Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004569998A Expired - Lifetime JP4825423B2 (ja) | 2003-07-23 | 2004-04-09 | プログラム可能な光選択アレイを有する暗視野検査システム |
JP2011162369A Pending JP2011221041A (ja) | 2003-07-23 | 2011-07-25 | 表面検査装置およびその方法 |
JP2014063711A Expired - Lifetime JP5878198B2 (ja) | 2003-07-23 | 2014-03-26 | 表面検査装置および表面検査方法 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011162369A Pending JP2011221041A (ja) | 2003-07-23 | 2011-07-25 | 表面検査装置およびその方法 |
JP2014063711A Expired - Lifetime JP5878198B2 (ja) | 2003-07-23 | 2014-03-26 | 表面検査装置および表面検査方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7002677B2 (ja) |
JP (3) | JP4825423B2 (ja) |
WO (1) | WO2005017952A2 (ja) |
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---|---|---|---|---|
US6627863B2 (en) * | 2000-12-15 | 2003-09-30 | Mitutoyo Corporation | System and methods to determine the settings of multiple light sources in a vision system |
US6861660B2 (en) * | 2002-07-29 | 2005-03-01 | Applied Materials, Inc. | Process and assembly for non-destructive surface inspection |
US7505619B2 (en) * | 2002-09-27 | 2009-03-17 | Kla-Tencor Technologies Corporation | System and method for conducting adaptive fourier filtering to detect defects in dense logic areas of an inspection surface |
ATE368209T1 (de) * | 2003-04-03 | 2007-08-15 | Erwin Pristner | Vorrichtung zum erfassen, bestimmen und dokumentieren von schäden, insbesondere durch plötzliche ereignisse verursachte deformationen an lackierten oberflächen |
JP4536337B2 (ja) * | 2003-06-10 | 2010-09-01 | 株式会社トプコン | 表面検査方法および表面検査装置 |
US7002677B2 (en) * | 2003-07-23 | 2006-02-21 | Kla-Tencor Technologies Corporation | Darkfield inspection system having a programmable light selection array |
US7184138B1 (en) * | 2004-03-11 | 2007-02-27 | Kla Tencor Technologies Corporation | Spatial filter for sample inspection system |
EP1743384B1 (en) * | 2004-03-30 | 2015-08-05 | Phoseon Technology, Inc. | Led array having array-based led detectors |
TWI302756B (en) | 2004-04-19 | 2008-11-01 | Phoseon Technology Inc | Imaging semiconductor structures using solid state illumination |
US7327304B2 (en) * | 2005-03-24 | 2008-02-05 | Agilent Technologies, Inc. | System and method for minimizing background noise in a microwave image using a programmable reflector array |
JP2009519473A (ja) * | 2005-10-17 | 2009-05-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 集積puf |
US7651869B2 (en) * | 2006-03-14 | 2010-01-26 | Research International, Inc. | Optical assay apparatus and methods |
US7433033B2 (en) * | 2006-05-05 | 2008-10-07 | Asml Netherlands B.V. | Inspection method and apparatus using same |
US7664608B2 (en) * | 2006-07-14 | 2010-02-16 | Hitachi High-Technologies Corporation | Defect inspection method and apparatus |
JP4928862B2 (ja) | 2006-08-04 | 2012-05-09 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
US7535563B1 (en) * | 2006-08-15 | 2009-05-19 | Kla-Tencor Technologies Corporation | Systems configured to inspect a specimen |
JP4755054B2 (ja) | 2006-09-01 | 2011-08-24 | 株式会社日立ハイテクノロジーズ | 表面検査方法、及び表面検査装置 |
US8264662B2 (en) * | 2007-06-18 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-line particle detection for immersion lithography |
JP2009014510A (ja) * | 2007-07-04 | 2009-01-22 | Hitachi High-Technologies Corp | 検査方法及び検査装置 |
US7746459B2 (en) * | 2007-08-10 | 2010-06-29 | Kla-Tencor Technologies Corp. | Systems configured to inspect a wafer |
JP5341440B2 (ja) | 2008-09-10 | 2013-11-13 | 株式会社日立ハイテクノロジーズ | 検査装置 |
US7623229B1 (en) | 2008-10-07 | 2009-11-24 | Kla-Tencor Corporation | Systems and methods for inspecting wafers |
WO2012105055A1 (ja) | 2011-02-04 | 2012-08-09 | 株式会社日立製作所 | 光学フィルタリング方法とそのデバイスおよび基板上欠陥検査方法とその装置 |
JP5867736B2 (ja) * | 2011-02-04 | 2016-02-24 | 株式会社日立製作所 | 光学フィルタリングデバイス、並びに欠陥検査方法及びその装置 |
WO2016015987A1 (en) | 2014-07-28 | 2016-02-04 | Asml Netherlands B.V. | Illumination system, inspection apparatus including such an illumination system, inspection method and manufacturing method |
JP2018065209A (ja) * | 2016-10-18 | 2018-04-26 | 株式会社荏原製作所 | 研磨パッドの表面性状測定装置 |
US20230259037A1 (en) | 2020-07-14 | 2023-08-17 | Asml Netherlands B.V. | A fluid handling system, method and lithographic apparatus |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01153943A (ja) * | 1987-12-11 | 1989-06-16 | Hitachi Ltd | 異物検出方法及びその装置 |
US5046847A (en) * | 1987-10-30 | 1991-09-10 | Hitachi Ltd. | Method for detecting foreign matter and device for realizing same |
US5659390A (en) * | 1995-02-09 | 1997-08-19 | Inspex, Inc. | Method and apparatus for detecting particles on a surface of a semiconductor wafer having repetitive patterns |
US6201601B1 (en) * | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
US6366352B1 (en) * | 1999-06-10 | 2002-04-02 | Applied Materials, Inc. | Optical inspection method and apparatus utilizing a variable angle design |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0682102B2 (ja) * | 1987-02-27 | 1994-10-19 | 三菱電機株式会社 | パターン欠陥検査装置及びパターン欠陥検査方法 |
JP2002310932A (ja) * | 1991-12-11 | 2002-10-23 | Hitachi Ltd | 半導体デバイス処理装置の監視方法およびそのシステム |
JP2002188999A (ja) * | 2000-12-21 | 2002-07-05 | Hitachi Ltd | 異物・欠陥検出装置及び検出方法 |
JP4183492B2 (ja) * | 2002-11-27 | 2008-11-19 | 株式会社日立製作所 | 欠陥検査装置および欠陥検査方法 |
US7002677B2 (en) * | 2003-07-23 | 2006-02-21 | Kla-Tencor Technologies Corporation | Darkfield inspection system having a programmable light selection array |
-
2003
- 2003-11-14 US US10/714,257 patent/US7002677B2/en not_active Expired - Lifetime
-
2004
- 2004-04-09 JP JP2004569998A patent/JP4825423B2/ja not_active Expired - Lifetime
- 2004-04-09 WO PCT/US2004/011127 patent/WO2005017952A2/en active Application Filing
-
2005
- 2005-12-07 US US11/297,028 patent/US7199874B2/en not_active Expired - Lifetime
-
2011
- 2011-07-25 JP JP2011162369A patent/JP2011221041A/ja active Pending
-
2014
- 2014-03-26 JP JP2014063711A patent/JP5878198B2/ja not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5046847A (en) * | 1987-10-30 | 1991-09-10 | Hitachi Ltd. | Method for detecting foreign matter and device for realizing same |
JPH01153943A (ja) * | 1987-12-11 | 1989-06-16 | Hitachi Ltd | 異物検出方法及びその装置 |
US5659390A (en) * | 1995-02-09 | 1997-08-19 | Inspex, Inc. | Method and apparatus for detecting particles on a surface of a semiconductor wafer having repetitive patterns |
US6201601B1 (en) * | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
US6366352B1 (en) * | 1999-06-10 | 2002-04-02 | Applied Materials, Inc. | Optical inspection method and apparatus utilizing a variable angle design |
JP2003502634A (ja) * | 1999-06-10 | 2003-01-21 | アプライド マテリアルズ インコーポレイテッド | 可変角度のデザインを用いた光検査の方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5878198B2 (ja) | 2016-03-08 |
JP2014132275A (ja) | 2014-07-17 |
US20050018179A1 (en) | 2005-01-27 |
WO2005017952A2 (en) | 2005-02-24 |
US20060082767A1 (en) | 2006-04-20 |
WO2005017952B1 (en) | 2005-10-27 |
JP2011221041A (ja) | 2011-11-04 |
JP2008519245A (ja) | 2008-06-05 |
US7002677B2 (en) | 2006-02-21 |
US7199874B2 (en) | 2007-04-03 |
WO2005017952A3 (en) | 2005-09-09 |
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