JP4823566B2 - 発光素子、表示装置及びテレビ受像器 - Google Patents
発光素子、表示装置及びテレビ受像器 Download PDFInfo
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- JP4823566B2 JP4823566B2 JP2005147829A JP2005147829A JP4823566B2 JP 4823566 B2 JP4823566 B2 JP 4823566B2 JP 2005147829 A JP2005147829 A JP 2005147829A JP 2005147829 A JP2005147829 A JP 2005147829A JP 4823566 B2 JP4823566 B2 JP 4823566B2
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
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Description
C.W.タンら、アプライド フィジクス レターズ、Vol.51,No.12,913−915(1987)
C.W.タンら、ジャーナル オブ アプライド フィジクス、Vol.65,No.9,3710−3716(1989)
その他の構成として、電極間に少なくとも電子輸送層、発光物質を含む発光層、第1の領域、及び第2の領域を有しており、前記電子輸送層は、前記発光層と前記第1の領域との間に前記第2の領域を有している。そして、前記第1の領域の多環縮合環を有する物質の濃度は前記第2の領域よりも高いことを特徴とする。
その他の構成として、電極間に少なくとも電子輸送層、発光物質を含む発光層、第1の領域、及び第2の領域を有しており、前記電子輸送層は、前記発光層と前記第1の領域との間に前記第2の領域を有している。そして、前記第1の領域に選択的に多環縮合環を有する物質を添加することを特徴とする。
図1(A)は本発明の薄膜発光素子の構成一例を示したものである。本実施の形態における薄膜発光素子は基板100などの絶縁表面上に形成された陽極電極101、正孔輸送層102、発光物質107を有する発光層103、電子輸送層10、陰極電極106よりなっている。電子輸送層10は層状の二つの領域に分けられるが、二つの領域には少なくとも一種類の共通する電子輸送性材料が用いられている。二つの領域のうち、より陰極電極106に近い第1の領域105には、前記した電子輸送性材料にさらに電子輸送性、電子注入性もしくはその両方を高める為の添加物108がドーピングされており、より発光層103に近い第2の領域104には添加物108はドーピングされていない。
本実施の形態では、本発明の表示装置の作製方法について図3、図4を参照しながら説明する。なお、本実施の形態ではアクティブマトリクス型の表示装置を作成する例を示したが、パッシブマトリクス型の表示装置であっても本発明の薄膜発光素子を適用することができるのはもちろんである。
本実施の形態では、本発明の一形態に相当する発光装置のパネルの外観について図6を用いて説明する。図6は基板上に形成されたトランジスタおよび発光素子を対向基板4006との間に形成したシール材によって封止したパネルの上面図であり、図6(B)は図6(A)の断面図に相応する。また、このパネルに搭載されている発光素子の構造は陽極電極、正孔輸送層、発光物質を有する発光層、電子輸送層、陰極電極よりなっており、電子輸送層は層状の二つの領域に分けられ、より陰極に近い第1の領域には多環縮合環よりなる添加物がドーピングされており、より発光層に近い第2の領域には多環縮合環よりなる添加物はドーピングされていない構成となっている。
実施の形態3にその一例を示したようなモジュールを搭載した本発明の電子機器として、ビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオコンポ等)、コンピュータ、ゲーム機器、携帯情報端末(モバイルコンピュータ、携帯電話、携帯型ゲーム機または電子書籍等)、記録媒体を備えた画像再生装置(具体的にはDigital Versatile Disc(DVD)等の記録媒体を再生し、その画像を表示しうるディスプレイを備えた装置)などが挙げられる。それらの電子機器の具体例を図7に示す。
(実施の形態5)
(実施の形態6)
本合成例は、下記構造式(1)で表されるビス{2,3−ビス(4−フルオロフェニル)キノキサリナト}アセチルアセトネート イリジウム(III)〔略称:Ir(Fdpq)2(acac)〕の合成例である。
まず、4,4’―ジフルオロベンジル3.71gとo―フェニレンジアミン1.71gを溶媒クロロホルム200mL中で6時間、加熱攪拌した。反応溶液を室温に戻し、1NHClと飽和食塩水で洗浄し、硫酸マグネシウムで乾燥した。溶媒を留去することにより、配位子HFdpq〔2,3−ビス(4−フルオロフェニル)キノキサリン〕を得た(淡黄色粉末、収率99%)。合成スキームおよび配位子HFdpqの構造式を下記式(2)に示す。
まず、2−エトキシエタノール30mlと水10mlとの混合液を溶媒として、配位子HFdpq(2,3−ビス−(4−フルオロフェニル)キノキサリン)を3.61g、塩化イリジウム(IrCl3・HCl・H2O)を1.35g混合し、窒素雰囲気下17時間還流することにより、複核錯体〔Ir(Fdpq)2Cl〕2 を得た(褐色粉末、収率99%)。合成スキームおよび複核錯体〔Ir(Fdpq)2Cl〕2の構造式を下記式(3)に示す。
さらに、2−エトキシエタノール30mlを溶媒として、上記ステップ2で得られた複核錯体〔Ir(Fdpq)2Cl〕2 を2.00g、アセチルアセトン(Hacac)を0.44ml、炭酸ナトリウムを1.23g混合し、窒素雰囲気下にて20時間還流することにより、前記構造式(16)で表される本発明の有機金属錯体Ir(Fdpq)2(acac)を得た(赤色粉末、収率44%)。合成スキームを下記式(4)に示す。
Claims (7)
- 陰極と、
前記陰極上に接して形成された電子輸送層と、
前記電子輸送層上に形成された発光物質を含む発光層と、
前記発光層上に形成された陽極と、
を有する発光素子において、
前記電子輸送層は、前記陰極に接する第1の領域と、前記発光層に近い第2の領域を有し、
前記第2の領域は10nm以上(10nmを除く)の厚さを有し、
前記第1の領域はルブレン、9,10−ジフェニルアントラセン、ペンタセン、ペリレンのうちの一つが含まれており、
前記第2の領域には前記ルブレン、前記9,10−ジフェニルアントラセン、前記ペンタセン及び前記ペリレンが含まれていないことを特徴とする発光素子。 - 陽極と、
前記陽極上に形成された発光物質を含む発光層と、
前記発光層上に形成された電子輸送層と、
前記電子輸送層上に接して形成された陰極と、
を有する発光素子において、
前記電子輸送層は、前記陰極に接する第1の領域と、前記発光層に近い第2の領域を有し、
前記第2の領域は10nm以上(10nmを除く)の厚さを有し、
前記第1の領域はルブレン、9,10−ジフェニルアントラセン、ペンタセン、ペリレンのうちの一つが含まれており、
前記第2の領域には前記ルブレン、前記9,10−ジフェニルアントラセン、前記ペンタセン及び前記ペリレンが含まれていないことを特徴とする発光素子。 - 請求項1または請求項2において、
前記第1の領域と前記第2の領域は同じ電子輸送性の材料が含まれていることを特徴とする発光素子。 - 請求項1乃至請求項3のいずれか一において、
前記第1の領域、前記第2の領域及び前記発光層は同じ電子輸送性の材料が含まれていることを特徴とする発光素子。 - 請求項1乃至請求項4のいずれか一において、
前記発光物質は燐光を発する材料であること特徴とする発光素子。 - 請求項1乃至請求項5のいずれか一に記載の発光素子を用いたことを特徴とする表示装置。
- 請求項6に記載の表示装置を用いたことを特徴とするテレビ受像器。
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US8242489B2 (en) * | 2009-12-17 | 2012-08-14 | Global Oled Technology, Llc. | OLED with high efficiency blue light-emitting layer |
KR101642117B1 (ko) * | 2010-04-22 | 2016-07-25 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
KR102430794B1 (ko) * | 2017-11-30 | 2022-08-08 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
US20230380206A1 (en) * | 2020-09-28 | 2023-11-23 | Sharp Kabushiki Kaisha | Photoelectric conversion element, display device, and method of manufacturing photoelectric conversion element |
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