JP4817946B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4817946B2
JP4817946B2 JP2006110404A JP2006110404A JP4817946B2 JP 4817946 B2 JP4817946 B2 JP 4817946B2 JP 2006110404 A JP2006110404 A JP 2006110404A JP 2006110404 A JP2006110404 A JP 2006110404A JP 4817946 B2 JP4817946 B2 JP 4817946B2
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Japan
Prior art keywords
layer
electrode layer
conductive layer
conductive
impurity region
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Expired - Fee Related
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JP2006110404A
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English (en)
Japanese (ja)
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JP2006317926A (ja
JP2006317926A5 (https=
Inventor
健吾 秋元
久 大谷
美佐子 廣末
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006110404A priority Critical patent/JP4817946B2/ja
Publication of JP2006317926A publication Critical patent/JP2006317926A/ja
Publication of JP2006317926A5 publication Critical patent/JP2006317926A5/ja
Application granted granted Critical
Publication of JP4817946B2 publication Critical patent/JP4817946B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2006110404A 2005-04-15 2006-04-13 表示装置の作製方法 Expired - Fee Related JP4817946B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006110404A JP4817946B2 (ja) 2005-04-15 2006-04-13 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005117723 2005-04-15
JP2005117723 2005-04-15
JP2006110404A JP4817946B2 (ja) 2005-04-15 2006-04-13 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006317926A JP2006317926A (ja) 2006-11-24
JP2006317926A5 JP2006317926A5 (https=) 2009-03-19
JP4817946B2 true JP4817946B2 (ja) 2011-11-16

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JP2006110404A Expired - Fee Related JP4817946B2 (ja) 2005-04-15 2006-04-13 表示装置の作製方法

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JP (1) JP4817946B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7369111B2 (en) 2003-04-29 2008-05-06 Samsung Electronics Co., Ltd. Gate driving circuit and display apparatus having the same
KR101376073B1 (ko) * 2007-06-14 2014-03-21 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 어레이 기판 및 이의 제조방법
JP2009037100A (ja) * 2007-08-03 2009-02-19 Sony Corp 表示装置
CN103208528B (zh) 2008-04-02 2015-09-30 Nlt科技股份有限公司 半导体器件、半导体器件制造方法、液晶显示装置和电子设备
KR101629347B1 (ko) 2008-12-23 2016-06-13 삼성디스플레이 주식회사 어레이 기판 및 이를 갖는 표시장치
KR101540327B1 (ko) 2009-02-16 2015-07-30 삼성디스플레이 주식회사 어레이 기판 및 이를 갖는 표시장치
WO2011046025A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR101701779B1 (ko) 2010-11-19 2017-02-03 삼성디스플레이 주식회사 입체 영상 표시 방법 및 이를 수행하는 표시 장치
KR102008687B1 (ko) 2012-08-22 2019-08-09 삼성디스플레이 주식회사 커브드 액정표시패널 및 이를 갖는 커브드 표시장치
KR102175441B1 (ko) 2014-01-07 2020-11-09 삼성디스플레이 주식회사 게이트 회로의 보호 방법 및 이를 수행하는 표시 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2717234B2 (ja) * 1991-05-11 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
JP2717233B2 (ja) * 1991-03-06 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
JP3641342B2 (ja) * 1997-03-07 2005-04-20 Ｔｄｋ株式会社 半導体装置及び有機ｅｌディスプレイ装置
JP2002134756A (ja) * 2000-10-26 2002-05-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP4739510B2 (ja) * 2000-12-15 2011-08-03 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4338934B2 (ja) * 2001-03-27 2009-10-07 株式会社半導体エネルギー研究所 配線の作製方法
TWI221340B (en) * 2003-05-30 2004-09-21 Ind Tech Res Inst Thin film transistor and method for fabricating thereof
JP2006250985A (ja) * 2005-03-08 2006-09-21 Sanyo Epson Imaging Devices Corp 電気光学装置及び電子機器

Also Published As

Publication number Publication date
JP2006317926A (ja) 2006-11-24

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