JP4810587B2 - 発光表示装置及びその製造方法 - Google Patents
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- JP4810587B2 JP4810587B2 JP2009123404A JP2009123404A JP4810587B2 JP 4810587 B2 JP4810587 B2 JP 4810587B2 JP 2009123404 A JP2009123404 A JP 2009123404A JP 2009123404 A JP2009123404 A JP 2009123404A JP 4810587 B2 JP4810587 B2 JP 4810587B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims description 132
- 239000003566 sealing material Substances 0.000 claims description 55
- 238000007789 sealing Methods 0.000 claims description 44
- 239000000945 filler Substances 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005304 joining Methods 0.000 claims description 2
- 150000003623 transition metal compounds Chemical class 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 230000009965 odorless effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 150000003682 vanadium compounds Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
110 薄膜トランジスタ
120 画素領域
130 発光素子
140 非画素領域
160 駆動回路
200 封止基板
210 無機密封材
220 ダム部材
222 反射膜
300 不活性液体充填材
Claims (17)
- 複数の発光素子が形成された第1基板と、
該第1基板に対向するように配置された第2基板と、
前記複数の発光素子を囲むように前記第1基板と前記第2基板との間に備えられ、表面に、レーザまたは赤外線を反射させる反射膜が形成されかつ無機物であるダム部材と、
該ダム部材の外側における前記第1基板と前記第2基板との間に備えられ、前記第1基板と前記第2基板とを接合させる無機密封材と、
前記ダム部材の内側における前記第1基板と前記第2基板との間に備えられ、ペルフルオロカーボン及びフロリナートからなる群より選択される少なくとも1つの不活性液体からなる充填材とを含むことを特徴とする発光表示装置。 - 前記発光素子は、第1電極、有機発光層、及び第2電極を含むことを特徴とする請求項1に記載の発光表示装置。
- 前記充填材は、前記第2電極と接触するように前記第1基板と前記第2基板との間に備えられることを特徴とする請求項2に記載の発光表示装置。
- 前記無機物は、フリットであることを特徴とする請求項1に記載の発光表示装置。
- 前記反射膜は、金(Au)、銀(Ag)、白金(Pt)、及びアルミニウム(Al)からなる群より選択される少なくとも1つの物質を含むことを特徴とする請求項1に記載の発光表示装置。
- 前記ダム部材は、前記無機密封材と接触するように配置されることを特徴とする請求項1に記載の発光表示装置。
- 前記無機密封材は、フリットであることを特徴とする請求項1に記載の発光表示装置。
- 前記フリットは、レーザまたは赤外線によって溶融することを特徴とする請求項7に記載の発光表示装置。
- 前記フリットは、遷移金属化合物を含むことを特徴とする請求項8に記載の発光表示装置。
- 複数の発光素子が形成された第1基板を提供するステップと、
第2基板を提供するステップと、
前記第2基板の外郭に沿って無機密封材を形成するステップと、
前記無機密封材の内側の前記第2基板に前記複数の発光素子を囲むように、表面に、レーザまたは赤外線を反射させる反射膜が形成されかつ無機物であるダム部材を形成するステップと、
前記ダム部材の内側にペルフルオロカーボン及びフロリナートからなる群より選択される少なくとも1つの不活性液体からなる充填材を滴下するステップと、
前記第1基板と前記第2基板とを対向するように配置するステップと、
前記無機密封材を前記第1基板及び前記第2基板に接合させて前記複数の発光素子を封止するステップとを含むことを特徴とする発光表示装置の製造方法。 - 前記無機密封材を形成するステップは、
フリットペーストを塗布するステップと、
前記塗布されたフリットペーストを乾燥または焼成させるステップとを含むことを特徴とする請求項10に記載の発光表示装置の製造方法。 - 前記ダム部材を形成するステップは、
フリットペーストを塗布するステップと、
前記塗布されたフリットペーストを乾燥または焼成させ、硬化させるステップとを含むことを特徴とする請求項10に記載の発光表示装置の製造方法。 - 前記ダム部材は、前記無機密封材と接触するように形成することを特徴とする請求項10に記載の発光表示装置の製造方法。
- 前記第1基板と前記第2基板とを対向するように配置するステップは、大気圧より低い圧力条件下で行われることを特徴とする請求項10に記載の発光表示装置の製造方法。
- 前記充填材が前記ダム部材の内側の前記第1基板と前記第2基板との間の空間に満たされるように、前記第1基板と前記第2基板とを加圧するステップをさらに含むことを特徴とする請求項10に記載の発光表示装置の製造方法。
- 前記発光素子を封止するステップは、前記無機密封材を溶融させて前記第1基板と前記第2基板とに接合させるステップを含むことを特徴とする請求項10に記載の発光表示装置の製造方法。
- 前記無機密封材をレーザまたは赤外線によって溶融させることを特徴とする請求項16に記載の発光表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2008-0106221 | 2008-10-29 | ||
KR1020080106221A KR101056260B1 (ko) | 2008-10-29 | 2008-10-29 | 발광 표시 장치 및 그의 제조 방법 |
Publications (2)
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JP2010108905A JP2010108905A (ja) | 2010-05-13 |
JP4810587B2 true JP4810587B2 (ja) | 2011-11-09 |
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Country Status (4)
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EP (1) | EP2182565B1 (ja) |
JP (1) | JP4810587B2 (ja) |
KR (1) | KR101056260B1 (ja) |
CN (1) | CN101728413B (ja) |
Cited By (1)
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KR101763616B1 (ko) | 2015-07-29 | 2017-08-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
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KR100993415B1 (ko) | 2009-03-24 | 2010-11-09 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 |
JP5627370B2 (ja) * | 2010-09-27 | 2014-11-19 | キヤノン株式会社 | 減圧気密容器及び画像表示装置の製造方法 |
KR101953724B1 (ko) * | 2011-08-26 | 2019-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 모듈, 발광 장치, 발광 모듈의 제작 방법, 발광 장치의 제작 방법 |
JP6142353B2 (ja) * | 2012-05-18 | 2017-06-07 | 株式会社Joled | 表示パネルの製造方法 |
JP6098090B2 (ja) * | 2012-09-26 | 2017-03-22 | 凸版印刷株式会社 | 有機エレクトロルミネッセンスパネルの製造方法 |
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WO2014166038A1 (zh) * | 2013-04-07 | 2014-10-16 | Liu Tajo | 有机半导体装置 |
KR102457248B1 (ko) | 2016-01-12 | 2022-10-21 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
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2008
- 2008-10-29 KR KR1020080106221A patent/KR101056260B1/ko active IP Right Grant
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2009
- 2009-04-15 CN CN2009101320472A patent/CN101728413B/zh active Active
- 2009-05-21 JP JP2009123404A patent/JP4810587B2/ja active Active
- 2009-10-27 EP EP09252487.5A patent/EP2182565B1/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101763616B1 (ko) | 2015-07-29 | 2017-08-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US9954200B2 (en) | 2015-07-29 | 2018-04-24 | Samsung Display Co., Ltd. | Organic light-emitting diode display |
US10468628B2 (en) | 2015-07-29 | 2019-11-05 | Samsung Display Co., Ltd. | Organic light-emitting diode display |
US11258039B2 (en) | 2015-07-29 | 2022-02-22 | Samsung Display Co., Ltd. | Organic light-emitting diode display |
US11925055B2 (en) | 2015-07-29 | 2024-03-05 | Samsung Display Co., Ltd. | Organic light-emitting diode display |
Also Published As
Publication number | Publication date |
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KR20100047366A (ko) | 2010-05-10 |
KR101056260B1 (ko) | 2011-08-11 |
JP2010108905A (ja) | 2010-05-13 |
CN101728413A (zh) | 2010-06-09 |
CN101728413B (zh) | 2013-01-23 |
EP2182565B1 (en) | 2017-12-06 |
EP2182565A1 (en) | 2010-05-05 |
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