JP4810057B2 - 集束イオンビームと走査型電子顕微鏡との同軸鏡筒を備えた装置並びに像形成及び処理方法 - Google Patents

集束イオンビームと走査型電子顕微鏡との同軸鏡筒を備えた装置並びに像形成及び処理方法 Download PDF

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JP4810057B2
JP4810057B2 JP2003288887A JP2003288887A JP4810057B2 JP 4810057 B2 JP4810057 B2 JP 4810057B2 JP 2003288887 A JP2003288887 A JP 2003288887A JP 2003288887 A JP2003288887 A JP 2003288887A JP 4810057 B2 JP4810057 B2 JP 4810057B2
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sample piece
lens
electron beam
lens element
electron
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JP2004071573A (ja
JP2004071573A5 (enExample
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ロバート・エル・ゲーラック
マーク・ダブリュー・ウトラウト
マイク・シャインファイン
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エフ・イ−・アイ・カンパニー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Measurement Of Radiation (AREA)
JP2003288887A 2002-08-07 2003-08-07 集束イオンビームと走査型電子顕微鏡との同軸鏡筒を備えた装置並びに像形成及び処理方法 Expired - Fee Related JP4810057B2 (ja)

Applications Claiming Priority (2)

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US40171802P 2002-08-07 2002-08-07
US60/401,718 2002-08-07

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JP2004071573A JP2004071573A (ja) 2004-03-04
JP2004071573A5 JP2004071573A5 (enExample) 2006-09-21
JP4810057B2 true JP4810057B2 (ja) 2011-11-09

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JP2003288887A Expired - Fee Related JP4810057B2 (ja) 2002-08-07 2003-08-07 集束イオンビームと走査型電子顕微鏡との同軸鏡筒を備えた装置並びに像形成及び処理方法

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US (1) US6900447B2 (enExample)
EP (1) EP1388883B1 (enExample)
JP (1) JP4810057B2 (enExample)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001059806A1 (en) * 2000-02-09 2001-08-16 Fei Company Through-the-lens collection of secondary particles for a focused ion beam system
EP1501115B1 (en) * 2003-07-14 2009-07-01 FEI Company Dual beam system
US20050181624A1 (en) * 2004-02-13 2005-08-18 International Business Machines Corporation Method of forming quantum dots at predetermined positions on a substrate
KR100973337B1 (ko) * 2005-06-03 2010-07-30 전자빔기술센터 주식회사 단순 구조의 초소형 전자칼럼
JP4230968B2 (ja) * 2004-07-20 2009-02-25 株式会社日立ハイテクノロジーズ 荷電粒子線装置
CN100576414C (zh) * 2004-07-22 2009-12-30 株式会社理光 电子束施加装置和描画装置
JP2006059513A (ja) * 2004-07-22 2006-03-02 Kuresutetsuku:Kk 電子ビーム照射装置および描画装置
US7791290B2 (en) 2005-09-30 2010-09-07 Virgin Islands Microsystems, Inc. Ultra-small resonating charged particle beam modulator
US7586097B2 (en) 2006-01-05 2009-09-08 Virgin Islands Microsystems, Inc. Switching micro-resonant structures using at least one director
US7626179B2 (en) 2005-09-30 2009-12-01 Virgin Island Microsystems, Inc. Electron beam induced resonance
US20070034518A1 (en) * 2005-08-15 2007-02-15 Virgin Islands Microsystems, Inc. Method of patterning ultra-small structures
KR20070101204A (ko) * 2004-08-24 2007-10-16 셀라 세미컨덕터 엔지니어링 라보라토리스 리미티드 워크피스를 밀링하기 위해 이온빔을 가하고 다수회편향시키고, 그 정도를 결정 및 제어하기 위한 방법, 장치및 시스템
US7388218B2 (en) * 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
WO2007064358A2 (en) 2005-09-30 2007-06-07 Virgin Islands Microsystems, Inc. Structures and methods for coupling energy from an electromagnetic wave
US7893397B2 (en) * 2005-11-07 2011-02-22 Fibics Incorporated Apparatus and method for surface modification using charged particle beams
US7579609B2 (en) 2005-12-14 2009-08-25 Virgin Islands Microsystems, Inc. Coupling light of light emitting resonator to waveguide
US7619373B2 (en) * 2006-01-05 2009-11-17 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US20070190794A1 (en) * 2006-02-10 2007-08-16 Virgin Islands Microsystems, Inc. Conductive polymers for the electroplating
JP2007212398A (ja) * 2006-02-13 2007-08-23 Toshiba Corp 基板検査装置および基板検査方法
US7605835B2 (en) 2006-02-28 2009-10-20 Virgin Islands Microsystems, Inc. Electro-photographic devices incorporating ultra-small resonant structures
US7443358B2 (en) 2006-02-28 2008-10-28 Virgin Island Microsystems, Inc. Integrated filter in antenna-based detector
US20070200646A1 (en) * 2006-02-28 2007-08-30 Virgin Island Microsystems, Inc. Method for coupling out of a magnetic device
US7558490B2 (en) 2006-04-10 2009-07-07 Virgin Islands Microsystems, Inc. Resonant detector for optical signals
US7876793B2 (en) 2006-04-26 2011-01-25 Virgin Islands Microsystems, Inc. Micro free electron laser (FEL)
US7646991B2 (en) 2006-04-26 2010-01-12 Virgin Island Microsystems, Inc. Selectable frequency EMR emitter
US20070252089A1 (en) * 2006-04-26 2007-11-01 Virgin Islands Microsystems, Inc. Charged particle acceleration apparatus and method
US7656094B2 (en) 2006-05-05 2010-02-02 Virgin Islands Microsystems, Inc. Electron accelerator for ultra-small resonant structures
US7569836B2 (en) 2006-05-05 2009-08-04 Virgin Islands Microsystems, Inc. Transmission of data between microchips using a particle beam
US7554083B2 (en) * 2006-05-05 2009-06-30 Virgin Islands Microsystems, Inc. Integration of electromagnetic detector on integrated chip
US7586167B2 (en) 2006-05-05 2009-09-08 Virgin Islands Microsystems, Inc. Detecting plasmons using a metallurgical junction
US7741934B2 (en) 2006-05-05 2010-06-22 Virgin Islands Microsystems, Inc. Coupling a signal through a window
US7728397B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Coupled nano-resonating energy emitting structures
US7718977B2 (en) 2006-05-05 2010-05-18 Virgin Island Microsystems, Inc. Stray charged particle removal device
US7557647B2 (en) * 2006-05-05 2009-07-07 Virgin Islands Microsystems, Inc. Heterodyne receiver using resonant structures
US8188431B2 (en) 2006-05-05 2012-05-29 Jonathan Gorrell Integration of vacuum microelectronic device with integrated circuit
US7732786B2 (en) 2006-05-05 2010-06-08 Virgin Islands Microsystems, Inc. Coupling energy in a plasmon wave to an electron beam
US7723698B2 (en) 2006-05-05 2010-05-25 Virgin Islands Microsystems, Inc. Top metal layer shield for ultra-small resonant structures
US7746532B2 (en) * 2006-05-05 2010-06-29 Virgin Island Microsystems, Inc. Electro-optical switching system and method
US7710040B2 (en) 2006-05-05 2010-05-04 Virgin Islands Microsystems, Inc. Single layer construction for ultra small devices
US7728702B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Shielding of integrated circuit package with high-permeability magnetic material
US7583370B2 (en) 2006-05-05 2009-09-01 Virgin Islands Microsystems, Inc. Resonant structures and methods for encoding signals into surface plasmons
US7986113B2 (en) 2006-05-05 2011-07-26 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7573045B2 (en) 2006-05-15 2009-08-11 Virgin Islands Microsystems, Inc. Plasmon wave propagation devices and methods
US7679067B2 (en) 2006-05-26 2010-03-16 Virgin Island Microsystems, Inc. Receiver array using shared electron beam
US7655934B2 (en) 2006-06-28 2010-02-02 Virgin Island Microsystems, Inc. Data on light bulb
US7560716B2 (en) * 2006-09-22 2009-07-14 Virgin Islands Microsystems, Inc. Free electron oscillator
US7659513B2 (en) 2006-12-20 2010-02-09 Virgin Islands Microsystems, Inc. Low terahertz source and detector
US7781733B2 (en) * 2007-05-16 2010-08-24 International Business Machines Corporation In-situ high-resolution light-optical channel for optical viewing and surface processing in parallel with charged particle (FIB and SEM) techniques
US7990336B2 (en) 2007-06-19 2011-08-02 Virgin Islands Microsystems, Inc. Microwave coupled excitation of solid state resonant arrays
US7791053B2 (en) 2007-10-10 2010-09-07 Virgin Islands Microsystems, Inc. Depressed anode with plasmon-enabled devices such as ultra-small resonant structures
US20110163068A1 (en) * 2008-01-09 2011-07-07 Mark Utlaut Multibeam System
JP4965481B2 (ja) * 2008-02-15 2012-07-04 エスアイアイ・ナノテクノロジー株式会社 複合荷電粒子ビーム装置、それを用いた試料加工方法及び透過電子顕微鏡用試料作製方法
US20110127428A1 (en) * 2008-06-02 2011-06-02 Carl Zeiss Nts, Llc. Electron detection systems and methods
US10493559B2 (en) * 2008-07-09 2019-12-03 Fei Company Method and apparatus for laser machining
DE102008041815A1 (de) * 2008-09-04 2010-04-15 Carl Zeiss Nts Gmbh Verfahren zur Analyse einer Probe
US20100252514A1 (en) * 2009-04-03 2010-10-07 Min-Ju Chung Foldable baseball equipment rack
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
US8524139B2 (en) * 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
CN105390358B (zh) 2010-04-07 2018-09-04 Fei 公司 组合激光器和带电粒子束系统
JP5603421B2 (ja) * 2010-05-31 2014-10-08 株式会社日立ハイテクノロジーズ 自動収差補正法を備えた荷電粒子線装置
EP3528276A3 (en) 2011-05-13 2019-09-04 Fibics Incorporated Microscopy imaging method
JP5542749B2 (ja) * 2011-06-30 2014-07-09 株式会社日立ハイテクノロジーズ 試料の作製装置，作製方法、及びそれを用いた荷電粒子線装置
JP2013101918A (ja) * 2011-10-13 2013-05-23 Canon Inc 質量分析装置
JP2013101929A (ja) 2011-11-07 2013-05-23 Fei Co 荷電粒子ビーム・システムの絞り
TWI489222B (zh) * 2012-02-16 2015-06-21 Nuflare Technology Inc Electron beam rendering device and electron beam rendering method
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
CN107359101B (zh) 2012-05-14 2019-07-12 Asml荷兰有限公司 带电粒子射束产生器中的高电压屏蔽和冷却
US9733164B2 (en) 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
US8759764B2 (en) 2012-06-29 2014-06-24 Fei Company On-axis detector for charged particle beam system
EP2872669A4 (en) * 2012-07-13 2016-03-23 Omniprobe Inc GAS INJECTION SYSTEM FOR INSTRUMENTS WITH ENERGETIC RAY
US9991090B2 (en) 2012-11-15 2018-06-05 Fei Company Dual laser beam system used with an electron microscope and FIB
US20160032281A1 (en) * 2014-07-31 2016-02-04 Fei Company Functionalized grids for locating and imaging biological specimens and methods of using the same
US9673019B2 (en) 2014-09-22 2017-06-06 El-Mul Technologies Ltd. Electron detection system
DE102016208689B4 (de) 2016-05-20 2018-07-26 Carl Zeiss Microscopy Gmbh Verfahren zum Erzeugen eines Bildes eines Objekts und/oder einer Darstellung von Daten über das Objekt sowie Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens
US10141156B2 (en) * 2016-09-27 2018-11-27 Kla-Tencor Corporation Measurement of overlay and edge placement errors with an electron beam column array
US10446369B1 (en) 2017-06-14 2019-10-15 National Technology & Engineering Solutions Of Sandia, Llc Systems and methods for interferometric end point detection for a focused ion beam fabrication tool
KR102798517B1 (ko) * 2020-04-28 2025-04-23 주식회사 히타치하이테크 하전 입자선 장치
DE102021112503B4 (de) * 2021-05-12 2025-03-27 Carl Zeiss Microscopy Gmbh Teilchenstrahlvorrichtung mit einer Ablenkeinheit

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1937482C3 (de) * 1969-07-23 1974-10-10 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen Mikrostrahlsonde
DE2223367C3 (de) * 1972-05-12 1978-11-30 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen Mikrostrahlsonde zur quantitativen Erfassung von geladenen Sekundärteilchen
US4426582A (en) 1980-01-21 1984-01-17 Oregon Graduate Center Charged particle beam apparatus and method utilizing liquid metal field ionization source and asymmetric three element lens system
US4629898A (en) * 1981-10-02 1986-12-16 Oregon Graduate Center Electron and ion beam apparatus and passivation milling
JPS6062045A (ja) * 1983-09-14 1985-04-10 Hitachi Ltd イオンマイクロビ−ム打込み装置
GB8401578D0 (en) * 1984-01-19 1984-02-22 Cleaver J R A Ion and electron beam electrostatic and magnetic lens systems
JPS60154442A (ja) * 1984-01-23 1985-08-14 Nippon Telegr & Teleph Corp <Ntt> 複数荷電ビ−ム用光学鏡体
JPS63236251A (ja) * 1987-03-23 1988-10-03 Jeol Ltd 電子ビ−ム−イオンビ−ム複合装置
US4818872A (en) * 1987-05-11 1989-04-04 Microbeam Inc. Integrated charge neutralization and imaging system
JPH0636346B2 (ja) * 1988-03-09 1994-05-11 セイコー電子工業株式会社 荷電粒子線装置及びこれによる試料観察方法
JPH02121252A (ja) * 1988-10-28 1990-05-09 Jeol Ltd 荷電粒子ビーム複合装置
JP3085390B2 (ja) * 1990-05-30 2000-09-04 株式会社日立製作所 荷電ビーム局所処理装置
EP1057203B1 (en) * 1998-12-17 2004-09-15 Fei Company Particle-optical apparatus involving detection of auger electrons
WO2001003155A1 (en) * 1999-07-02 2001-01-11 Michael Mauck Method and apparatus for simultaneously depositing and observing materials on a target
WO2001059805A1 (en) * 2000-02-09 2001-08-16 Fei Company Multi-column fib for nanofabrication applications
WO2001059806A1 (en) * 2000-02-09 2001-08-16 Fei Company Through-the-lens collection of secondary particles for a focused ion beam system
JP5501545B2 (ja) * 2000-05-18 2014-05-21 エフ イー アイ カンパニ 集束イオンビーム系に関するレンズを通じた試料を中和する電子ビーム
US6683320B2 (en) 2000-05-18 2004-01-27 Fei Company Through-the-lens neutralization for charged particle beam system
JP2002050306A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd カラー陰極線管

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JP2004071573A (ja) 2004-03-04
US20040108458A1 (en) 2004-06-10
EP1388883A3 (en) 2004-10-20
EP1388883A2 (en) 2004-02-11
EP1388883B1 (en) 2013-06-05
US6900447B2 (en) 2005-05-31

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