JP2014220241A5 - - Google Patents

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Publication number
JP2014220241A5
JP2014220241A5 JP2014094547A JP2014094547A JP2014220241A5 JP 2014220241 A5 JP2014220241 A5 JP 2014220241A5 JP 2014094547 A JP2014094547 A JP 2014094547A JP 2014094547 A JP2014094547 A JP 2014094547A JP 2014220241 A5 JP2014220241 A5 JP 2014220241A5
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Japan
Prior art keywords
electrode
potential
sample
energy
column
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JP2014094547A
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English (en)
Japanese (ja)
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JP5791060B2 (ja
JP2014220241A (ja
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Priority claimed from EP13166694.3A external-priority patent/EP2801997B1/en
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Publication of JP2014220241A5 publication Critical patent/JP2014220241A5/ja
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JP2014094547A 2013-05-06 2014-05-01 電子ビームウェーハ検査システム及びその作動方法 Active JP5791060B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13166694.3 2013-05-06
EP13166694.3A EP2801997B1 (en) 2013-05-06 2013-05-06 Electron beam wafer inspection system and method for operation thereof

Publications (3)

Publication Number Publication Date
JP2014220241A JP2014220241A (ja) 2014-11-20
JP2014220241A5 true JP2014220241A5 (enExample) 2015-03-05
JP5791060B2 JP5791060B2 (ja) 2015-10-07

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JP2014094547A Active JP5791060B2 (ja) 2013-05-06 2014-05-01 電子ビームウェーハ検査システム及びその作動方法

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US (1) US8785879B1 (enExample)
EP (1) EP2801997B1 (enExample)
JP (1) JP5791060B2 (enExample)
TW (1) TWI557769B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9601303B2 (en) * 2015-08-12 2017-03-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample
JP6746422B2 (ja) * 2016-08-01 2020-08-26 株式会社日立製作所 荷電粒子線装置
US10872742B2 (en) * 2016-11-24 2020-12-22 Hitachi High-Tech Corporation Charged particle beam device
JP6653273B2 (ja) * 2017-01-26 2020-02-26 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
US10840056B2 (en) * 2017-02-03 2020-11-17 Kla Corporation Multi-column scanning electron microscopy system
US10096447B1 (en) 2017-08-02 2018-10-09 Kla-Tencor Corporation Electron beam apparatus with high resolutions
CN107452578B (zh) * 2017-09-04 2018-06-22 国家纳米科学中心 一种灯丝定位系统及灯丝定位方法
US10777382B2 (en) * 2017-11-21 2020-09-15 Focus-Ebeam Technology (Beijing) Co., Ltd. Low voltage scanning electron microscope and method for specimen observation
US11133152B2 (en) 2019-03-21 2021-09-28 Applied Materials, Inc. Methods and apparatus for performing profile metrology on semiconductor structures
WO2021001919A1 (ja) * 2019-07-02 2021-01-07 株式会社日立ハイテク 荷電粒子線装置
EP4107774A1 (en) * 2020-02-21 2022-12-28 ASML Netherlands B.V. Charged particle inspection tool, inspection method
US11183361B1 (en) * 2020-05-19 2021-11-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample
US11239043B2 (en) * 2020-05-19 2022-02-01 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample
US12451319B2 (en) * 2020-10-05 2025-10-21 Kla Corporation Electron source with magnetic suppressor electrode
CN114256043B (zh) 2020-12-02 2024-04-05 聚束科技（北京）有限公司 一种电子束系统
CN114220725B (zh) 2020-12-02 2024-05-07 聚束科技（北京）有限公司 一种电子显微镜
US12494339B2 (en) 2021-08-25 2025-12-09 Kla Corporation High resolution, multi-electron beam apparatus
CN120660166A (zh) 2023-04-20 2025-09-16 株式会社日立高新技术 带电粒子束装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8401578D0 (en) * 1984-01-19 1984-02-22 Cleaver J R A Ion and electron beam electrostatic and magnetic lens systems
US6897442B2 (en) * 2003-04-25 2005-05-24 Applied Materials Israel, Ltd. Objective lens arrangement for use in a charged particle beam column
US7268357B2 (en) * 2005-05-16 2007-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and method
EP1777728A1 (en) * 2005-10-20 2007-04-25 Carl Zeiss SMS GmbH Lithography system
US7825386B2 (en) * 2006-10-25 2010-11-02 Hermes-Microvision, Inc. System and method for a charged particle beam
JP5615489B2 (ja) * 2008-08-08 2014-10-29 株式会社荏原製作所 基板表面の検査方法及び検査装置
US8536538B2 (en) * 2011-02-16 2013-09-17 Kla-Tencor Corporation Multiple-pole electrostatic deflector for improving throughput of focused electron beam instruments

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