JP2014220241A5 - - Google Patents
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- JP2014220241A5 JP2014220241A5 JP2014094547A JP2014094547A JP2014220241A5 JP 2014220241 A5 JP2014220241 A5 JP 2014220241A5 JP 2014094547 A JP2014094547 A JP 2014094547A JP 2014094547 A JP2014094547 A JP 2014094547A JP 2014220241 A5 JP2014220241 A5 JP 2014220241A5
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- 239000000523 sample Substances 0.000 description 63
- 238000010894 electron beam technology Methods 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 45
- 239000002245 particle Substances 0.000 description 30
- 238000003384 imaging method Methods 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 230000001133 acceleration Effects 0.000 description 14
- 238000000605 extraction Methods 0.000 description 14
- 238000007689 inspection Methods 0.000 description 14
- 238000007654 immersion Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000005686 electrostatic field Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
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- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 230000002441 reversible effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP13166694.3A EP2801997B1 (en) | 2013-05-06 | 2013-05-06 | Electron beam wafer inspection system and method for operation thereof |
| EP13166694.3 | 2013-05-06 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014220241A JP2014220241A (ja) | 2014-11-20 |
| JP2014220241A5 true JP2014220241A5 (enExample) | 2015-03-05 |
| JP5791060B2 JP5791060B2 (ja) | 2015-10-07 |
Family
ID=48227062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014094547A Active JP5791060B2 (ja) | 2013-05-06 | 2014-05-01 | 電子ビームウェーハ検査システム及びその作動方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8785879B1 (enExample) |
| EP (1) | EP2801997B1 (enExample) |
| JP (1) | JP5791060B2 (enExample) |
| TW (1) | TWI557769B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9601303B2 (en) * | 2015-08-12 | 2017-03-21 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device and method for inspecting and/or imaging a sample |
| JP6746422B2 (ja) * | 2016-08-01 | 2020-08-26 | 株式会社日立製作所 | 荷電粒子線装置 |
| WO2018096610A1 (ja) * | 2016-11-24 | 2018-05-31 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP6653273B2 (ja) * | 2017-01-26 | 2020-02-26 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
| US10840056B2 (en) * | 2017-02-03 | 2020-11-17 | Kla Corporation | Multi-column scanning electron microscopy system |
| US10096447B1 (en) | 2017-08-02 | 2018-10-09 | Kla-Tencor Corporation | Electron beam apparatus with high resolutions |
| CN107452578B (zh) * | 2017-09-04 | 2018-06-22 | 国家纳米科学中心 | 一种灯丝定位系统及灯丝定位方法 |
| WO2019100600A1 (en) * | 2017-11-21 | 2019-05-31 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Low voltage scanning electron microscope and method for specimen observation |
| US11133152B2 (en) | 2019-03-21 | 2021-09-28 | Applied Materials, Inc. | Methods and apparatus for performing profile metrology on semiconductor structures |
| DE112019007399T5 (de) * | 2019-07-02 | 2022-02-24 | Hitachi High-Tech Corporation | Ladungsteilchenstrahleinrichtung |
| CN115152000A (zh) * | 2020-02-21 | 2022-10-04 | Asml荷兰有限公司 | 带电粒子评估工具及检查方法 |
| US11239043B2 (en) * | 2020-05-19 | 2022-02-01 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device and method for inspecting and/or imaging a sample |
| US11183361B1 (en) * | 2020-05-19 | 2021-11-23 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device and method for inspecting and/or imaging a sample |
| US12451319B2 (en) * | 2020-10-05 | 2025-10-21 | Kla Corporation | Electron source with magnetic suppressor electrode |
| CN114256043B (zh) | 2020-12-02 | 2024-04-05 | 聚束科技（北京）有限公司 | 一种电子束系统 |
| CN114220725B (zh) | 2020-12-02 | 2024-05-07 | 聚束科技（北京）有限公司 | 一种电子显微镜 |
| US12494339B2 (en) | 2021-08-25 | 2025-12-09 | Kla Corporation | High resolution, multi-electron beam apparatus |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8401578D0 (en) * | 1984-01-19 | 1984-02-22 | Cleaver J R A | Ion and electron beam electrostatic and magnetic lens systems |
| US6897442B2 (en) * | 2003-04-25 | 2005-05-24 | Applied Materials Israel, Ltd. | Objective lens arrangement for use in a charged particle beam column |
| US7268357B2 (en) * | 2005-05-16 | 2007-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and method |
| EP1777728A1 (en) * | 2005-10-20 | 2007-04-25 | Carl Zeiss SMS GmbH | Lithography system |
| US7825386B2 (en) * | 2006-10-25 | 2010-11-02 | Hermes-Microvision, Inc. | System and method for a charged particle beam |
| JP5615489B2 (ja) * | 2008-08-08 | 2014-10-29 | 株式会社荏原製作所 | 基板表面の検査方法及び検査装置 |
| US8536538B2 (en) * | 2011-02-16 | 2013-09-17 | Kla-Tencor Corporation | Multiple-pole electrostatic deflector for improving throughput of focused electron beam instruments |
-
2013
- 2013-05-06 EP EP13166694.3A patent/EP2801997B1/en active Active
- 2013-07-18 US US13/945,299 patent/US8785879B1/en active Active
-
2014
- 2014-05-01 JP JP2014094547A patent/JP5791060B2/ja active Active
- 2014-05-02 TW TW103115845A patent/TWI557769B/zh active
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