TWI557769B - 電子束晶圓檢查系統及其操作方法 - Google Patents
電子束晶圓檢查系統及其操作方法 Download PDFInfo
- Publication number
- TWI557769B TWI557769B TW103115845A TW103115845A TWI557769B TW I557769 B TWI557769 B TW I557769B TW 103115845 A TW103115845 A TW 103115845A TW 103115845 A TW103115845 A TW 103115845A TW I557769 B TWI557769 B TW I557769B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- electron beam
- wafer
- potential
- emitter
- Prior art date
Links
- 238000010894 electron beam technology Methods 0.000 title claims description 111
- 238000000034 method Methods 0.000 title claims description 26
- 238000007689 inspection Methods 0.000 title description 14
- 230000003287 optical effect Effects 0.000 claims description 24
- 230000005686 electrostatic field Effects 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 8
- 239000000523 sample Substances 0.000 description 66
- 235000012431 wafers Nutrition 0.000 description 40
- 239000002245 particle Substances 0.000 description 26
- 230000001133 acceleration Effects 0.000 description 9
- 238000007654 immersion Methods 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 239000011859 microparticle Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 208000004160 Rasmussen subacute encephalitis Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/145—Combinations of electrostatic and magnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP13166694.3A EP2801997B1 (en) | 2013-05-06 | 2013-05-06 | Electron beam wafer inspection system and method for operation thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201503210A TW201503210A (zh) | 2015-01-16 |
| TWI557769B true TWI557769B (zh) | 2016-11-11 |
Family
ID=48227062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103115845A TWI557769B (zh) | 2013-05-06 | 2014-05-02 | 電子束晶圓檢查系統及其操作方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8785879B1 (enExample) |
| EP (1) | EP2801997B1 (enExample) |
| JP (1) | JP5791060B2 (enExample) |
| TW (1) | TWI557769B (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI649820B (zh) * | 2017-01-26 | 2019-02-01 | Fasford Technology Co., Ltd. | 半導體製造裝置及半導體裝置的製造方法 |
| TWI748478B (zh) * | 2019-07-02 | 2021-12-01 | 日商日立全球先端科技股份有限公司 | 荷電粒子束裝置 |
| TWI852591B (zh) * | 2020-02-21 | 2024-08-11 | 荷蘭商Ａｓｍｌ荷蘭公司 | 帶電粒子評估工具及檢測方法 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9601303B2 (en) * | 2015-08-12 | 2017-03-21 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device and method for inspecting and/or imaging a sample |
| JP6746422B2 (ja) * | 2016-08-01 | 2020-08-26 | 株式会社日立製作所 | 荷電粒子線装置 |
| WO2018096610A1 (ja) * | 2016-11-24 | 2018-05-31 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| US10840056B2 (en) * | 2017-02-03 | 2020-11-17 | Kla Corporation | Multi-column scanning electron microscopy system |
| US10096447B1 (en) | 2017-08-02 | 2018-10-09 | Kla-Tencor Corporation | Electron beam apparatus with high resolutions |
| CN107452578B (zh) * | 2017-09-04 | 2018-06-22 | 国家纳米科学中心 | 一种灯丝定位系统及灯丝定位方法 |
| WO2019100600A1 (en) * | 2017-11-21 | 2019-05-31 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Low voltage scanning electron microscope and method for specimen observation |
| US11133152B2 (en) | 2019-03-21 | 2021-09-28 | Applied Materials, Inc. | Methods and apparatus for performing profile metrology on semiconductor structures |
| US11239043B2 (en) * | 2020-05-19 | 2022-02-01 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device and method for inspecting and/or imaging a sample |
| US11183361B1 (en) * | 2020-05-19 | 2021-11-23 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device and method for inspecting and/or imaging a sample |
| US12451319B2 (en) * | 2020-10-05 | 2025-10-21 | Kla Corporation | Electron source with magnetic suppressor electrode |
| CN114256043B (zh) | 2020-12-02 | 2024-04-05 | 聚束科技（北京）有限公司 | 一种电子束系统 |
| CN114220725B (zh) | 2020-12-02 | 2024-05-07 | 聚束科技（北京）有限公司 | 一种电子显微镜 |
| US12494339B2 (en) | 2021-08-25 | 2025-12-09 | Kla Corporation | High resolution, multi-electron beam apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040211913A1 (en) * | 2003-04-25 | 2004-10-28 | Applied Materials Israel Ltd | Objective lens arrangement for use in a charged particle beam column |
| CN1952785A (zh) * | 2005-05-16 | 2007-04-25 | 台湾积体电路制造股份有限公司 | 浸润式微影系统及其制程 |
| US20080121810A1 (en) * | 2006-10-25 | 2008-05-29 | Hermes-Microvision, Inc. | System and method for a charged particle beam |
| TW201241865A (en) * | 2011-02-16 | 2012-10-16 | Kla Tencor Corp | Multiple-pole electrostatic deflector for improving throughput of focused electron beam instruments |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8401578D0 (en) * | 1984-01-19 | 1984-02-22 | Cleaver J R A | Ion and electron beam electrostatic and magnetic lens systems |
| EP1777728A1 (en) * | 2005-10-20 | 2007-04-25 | Carl Zeiss SMS GmbH | Lithography system |
| JP5615489B2 (ja) * | 2008-08-08 | 2014-10-29 | 株式会社荏原製作所 | 基板表面の検査方法及び検査装置 |
-
2013
- 2013-05-06 EP EP13166694.3A patent/EP2801997B1/en active Active
- 2013-07-18 US US13/945,299 patent/US8785879B1/en active Active
-
2014
- 2014-05-01 JP JP2014094547A patent/JP5791060B2/ja active Active
- 2014-05-02 TW TW103115845A patent/TWI557769B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040211913A1 (en) * | 2003-04-25 | 2004-10-28 | Applied Materials Israel Ltd | Objective lens arrangement for use in a charged particle beam column |
| CN1952785A (zh) * | 2005-05-16 | 2007-04-25 | 台湾积体电路制造股份有限公司 | 浸润式微影系统及其制程 |
| US20080121810A1 (en) * | 2006-10-25 | 2008-05-29 | Hermes-Microvision, Inc. | System and method for a charged particle beam |
| TW201241865A (en) * | 2011-02-16 | 2012-10-16 | Kla Tencor Corp | Multiple-pole electrostatic deflector for improving throughput of focused electron beam instruments |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI649820B (zh) * | 2017-01-26 | 2019-02-01 | Fasford Technology Co., Ltd. | 半導體製造裝置及半導體裝置的製造方法 |
| TWI748478B (zh) * | 2019-07-02 | 2021-12-01 | 日商日立全球先端科技股份有限公司 | 荷電粒子束裝置 |
| US12394586B2 (en) | 2019-07-02 | 2025-08-19 | Hitachi High-Tech Corporation | Charged particle beam device |
| TWI852591B (zh) * | 2020-02-21 | 2024-08-11 | 荷蘭商Ａｓｍｌ荷蘭公司 | 帶電粒子評估工具及檢測方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2801997A1 (en) | 2014-11-12 |
| TW201503210A (zh) | 2015-01-16 |
| JP5791060B2 (ja) | 2015-10-07 |
| EP2801997B1 (en) | 2016-03-09 |
| JP2014220241A (ja) | 2014-11-20 |
| US8785879B1 (en) | 2014-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI557769B (zh) | 電子束晶圓檢查系統及其操作方法 | |
| US10522327B2 (en) | Method of operating a charged particle beam specimen inspection system | |
| US10541112B2 (en) | Charged particle beam system and method of operating the same | |
| CN112567493B (zh) | 用于多个带电粒子束的装置 | |
| JP6728498B2 (ja) | 試験片を検査する方法および荷電粒子マルチビーム装置 | |
| TWI588862B (zh) | 減速電場掃描電子顯微鏡及使樣品成像之方法 | |
| JP6099113B2 (ja) | ツインビーム荷電粒子ビームコラム及びその作動方法 | |
| JP2014220241A5 (enExample) | ||
| EP2511939B1 (en) | Arrangement and method for the contrast improvement in a charged particle beam device for inspecting a specimen | |
| TW201527745A (zh) | 用於高產量電子束檢測（ｅｂｉ）的多射束系統 | |
| US8759761B2 (en) | Charged corpuscular particle beam irradiating method, and charged corpuscular particle beam apparatus | |
| US7034297B2 (en) | Method and system for use in the monitoring of samples with a charged particle beam | |
| KR20240055162A (ko) | 전자기 복합 렌즈 및 이러한 렌즈를 갖는 하전 입자 광학 시스템 | |
| KR20200119839A (ko) | 신호 전자들의 개선된 검출 성능을 갖는 멀티-빔 검사 장치 | |
| WO2015183734A1 (en) | Electron beam imaging with dual wien-filter monochromator | |
| JP2024536793A (ja) | 荷電粒子装置及び方法 | |
| US9595417B2 (en) | High resolution charged particle beam device and method of operating the same | |
| US9245709B1 (en) | Charged particle beam specimen inspection system and method for operation thereof | |
| US20240029995A1 (en) | Electron-optical system and method of operating an electron-optical system | |
| TWI860520B (zh) | 帶電粒子裝置及方法 | |
| KR20230157977A (ko) | 플러드 컬럼 및 하전 입자 장치 |