JP4799402B2 - ２以上の計測された散乱計測信号間の比較によるプロセス最適化および制御の方法 - Google Patents

２以上の計測された散乱計測信号間の比較によるプロセス最適化および制御の方法 Download PDF

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JP4799402B2
JP4799402B2 JP2006501078A JP2006501078A JP4799402B2 JP 4799402 B2 JP4799402 B2 JP 4799402B2 JP 2006501078 A JP2006501078 A JP 2006501078A JP 2006501078 A JP2006501078 A JP 2006501078A JP 4799402 B2 JP4799402 B2 JP 4799402B2
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different
difference
scatterometry
process parameters
lattice
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JP2006515958A (ja
JP2006515958A5 (enExample
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ミーハー・ウォルター・ディ．
マック・クリス
ハンキンソン・マット
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8411—Application to online plant, process monitoring
    • G01N2021/8416—Application to online plant, process monitoring and process controlling, not otherwise provided for
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006501078A 2003-01-17 2004-01-20 ２以上の計測された散乱計測信号間の比較によるプロセス最適化および制御の方法 Expired - Fee Related JP4799402B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US44104803P 2003-01-17 2003-01-17
US60/441,048 2003-01-17
PCT/US2004/001570 WO2004066028A2 (en) 2003-01-17 2004-01-20 Method for process optimization and control by comparison between 2 or more measured scatterometry signals

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JP2006515958A JP2006515958A (ja) 2006-06-08
JP2006515958A5 JP2006515958A5 (enExample) 2007-03-08
JP4799402B2 true JP4799402B2 (ja) 2011-10-26

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US (1) US7352453B2 (enExample)
JP (1) JP4799402B2 (enExample)
WO (1) WO2004066028A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015525902A (ja) * 2012-07-23 2015-09-07 エーエスエムエル ネザーランズ ビー．ブイ． 検査方法及び装置、リソグラフィシステム並びにデバイス製造方法
US11402320B2 (en) * 2018-02-26 2022-08-02 Jasco Corporation Phase difference control device

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7382447B2 (en) * 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
US7119893B2 (en) * 2003-04-10 2006-10-10 Accent Optical Technologies, Inc. Determination of center of focus by parameter variability analysis
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20080144036A1 (en) 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
KR100887352B1 (ko) * 2004-11-16 2009-03-06 도쿄엘렉트론가부시키가이샤 노광 조건 설정 방법, 기판 처리 장치 및 컴퓨터 프로그램이 수록된 기록매체
US20060117293A1 (en) * 2004-11-30 2006-06-01 Nigel Smith Method for designing an overlay mark
US7519940B2 (en) * 2005-05-02 2009-04-14 Cadence Design Systems, Inc. Apparatus and method for compensating a lithography projection tool
WO2007019269A2 (en) * 2005-08-08 2007-02-15 Brion Technologies, Inc. System and method for creating a focus-exposure model of a lithography process
US7695876B2 (en) * 2005-08-31 2010-04-13 Brion Technologies, Inc. Method for identifying and using process window signature patterns for lithography process control
DE102006023196B3 (de) * 2006-05-17 2007-12-06 Qimonda Ag Verfahren und Vorrichtung zum Einstellen von gerätespezifischen Auswerteparametern
US7916284B2 (en) * 2006-07-18 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7352439B2 (en) * 2006-08-02 2008-04-01 Asml Netherlands B.V. Lithography system, control system and device manufacturing method
DE102006038643B4 (de) 2006-08-17 2009-06-10 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
US7510960B2 (en) * 2006-08-29 2009-03-31 International Business Machines Corporation Bridge for semiconductor internal node
US7505148B2 (en) * 2006-11-16 2009-03-17 Tokyo Electron Limited Matching optical metrology tools using spectra enhancement
DE102006056625B4 (de) * 2006-11-30 2014-11-20 Globalfoundries Inc. Verfahren und Teststruktur zum Bestimmen von Fokuseinstellungen in einem Lithographieprozess auf der Grundlage von CD-Messungen
US8069020B2 (en) * 2007-09-19 2011-11-29 Tokyo Electron Limited Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion
JP4897006B2 (ja) * 2008-03-04 2012-03-14 エーエスエムエル ネザーランズ ビー．ブイ． アラインメントマークを設ける方法、デバイス製造方法及びリソグラフィ装置
NL1036856A1 (nl) * 2008-04-24 2009-10-27 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP2010044101A (ja) * 2008-08-08 2010-02-25 Toshiba Corp パターン予測方法、プログラム及び装置
KR101295203B1 (ko) * 2008-10-06 2013-08-09 에이에스엠엘 네델란즈 비.브이. 2차원 타겟을 이용한 리소그래피 포커스 및 조사량 측정
NL2003654A (en) 2008-11-06 2010-05-10 Brion Tech Inc Methods and system for lithography calibration.
SG172294A1 (en) 2008-12-30 2011-07-28 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
JP2010192623A (ja) * 2009-02-17 2010-09-02 Renesas Electronics Corp 半導体装置の製造装置、その制御方法、及びその制御プログラム
EP2430498B1 (en) 2009-05-12 2018-01-31 ASML Netherlands BV Inspection method for lithography
US8313877B2 (en) * 2009-06-12 2012-11-20 Micron Technology, Inc. Photolithography monitoring mark, photolithography mask comprising an exposure monitoring mark, and phase shift mask comprising an exposure monitoring mark
WO2011003734A1 (en) * 2009-07-06 2011-01-13 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus and lithographic processing cell
NL2005162A (en) 2009-07-31 2011-02-02 Asml Netherlands Bv Methods and scatterometers, lithographic systems, and lithographic processing cells.
NL2008702A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Computational process control.
US10354929B2 (en) * 2012-05-08 2019-07-16 Kla-Tencor Corporation Measurement recipe optimization based on spectral sensitivity and process variation
US20130325395A1 (en) * 2012-06-01 2013-12-05 Globalfoundries Singapore Pte. Ltd. Co-optimization of scatterometry mark design and process monitor mark design
US9466100B2 (en) * 2012-06-06 2016-10-11 Kla-Tencor Corporation Focus monitoring method using asymmetry embedded imaging target
NL2010905A (en) 2012-06-22 2013-12-24 Asml Netherlands Bv Method of determining focus, inspection apparatus, patterning device, substrate and device manufacturing method.
KR20150087397A (ko) 2012-11-21 2015-07-29 케이엘에이-텐코 코포레이션 프로세스 호환 세그먼팅된 타겟들 및 설계 방법들
NL2011816A (en) * 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
CN104919372A (zh) * 2012-11-30 2015-09-16 Asml荷兰有限公司 用于确定结构的光刻品质的光刻方法和设备
TWI614586B (zh) * 2012-12-20 2018-02-11 Nikon Corp 評估方法及裝置、加工方法、以及曝光系統
US8782572B1 (en) 2013-03-13 2014-07-15 United Microelectronics Corp. Method of optical proximity correction
US8782569B1 (en) 2013-03-14 2014-07-15 United Microelectronics Corp. Method for inspecting photo-mask
KR101826651B1 (ko) * 2013-06-12 2018-02-07 에이에스엠엘 네델란즈 비.브이. 임계 치수 관련 특성을 결정하는 방법, 검사 장치, 및 디바이스 제조 방법
WO2015009619A1 (en) * 2013-07-15 2015-01-22 Kla-Tencor Corporation Producing resist layers using fine segmentation
US9383661B2 (en) 2013-08-10 2016-07-05 Kla-Tencor Corporation Methods and apparatus for determining focus
US10935893B2 (en) 2013-08-11 2021-03-02 Kla-Tencor Corporation Differential methods and apparatus for metrology of semiconductor targets
AT513185B1 (de) * 2013-11-13 2015-12-15 Ditest Fahrzeugdiagnose Gmbh Kalibrierelement
US9490182B2 (en) 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
US9851300B1 (en) * 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
US10576603B2 (en) * 2014-04-22 2020-03-03 Kla-Tencor Corporation Patterned wafer geometry measurements for semiconductor process controls
WO2015193904A1 (en) * 2014-06-19 2015-12-23 Nova Measuring Instruments Ltd. Test structure design for metrology measurements in patterned samples
NL2014938A (en) 2014-06-30 2016-03-31 Asml Netherlands Bv Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method.
US9841689B1 (en) * 2014-08-22 2017-12-12 Kla-Tencor Corporation Approach for model calibration used for focus and dose measurement
US9739719B2 (en) 2014-10-31 2017-08-22 Kla-Tencor Corporation Measurement systems having linked field and pupil signal detection
SG11201703585RA (en) * 2014-11-25 2017-06-29 Kla Tencor Corp Analyzing and utilizing landscapes
KR102109059B1 (ko) * 2014-11-26 2020-05-12 에이에스엠엘 네델란즈 비.브이. 계측 방법, 컴퓨터 제품 및 시스템
US10072921B2 (en) 2014-12-05 2018-09-11 Kla-Tencor Corporation Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element
US10401740B2 (en) 2015-05-15 2019-09-03 Kla-Tencor Corporation System and method for focus determination using focus-sensitive overlay targets
US9995689B2 (en) * 2015-05-22 2018-06-12 Nanometrics Incorporated Optical metrology using differential fitting
IL302339B2 (en) * 2015-06-12 2024-07-01 Asml Netherlands Bv Inspection apparatus, inspection method, lithographic apparatus, patterning device and manufacturing method
WO2017016839A1 (en) 2015-07-24 2017-02-02 Asml Netherlands B.V. Inspection apparatus, inspection method, lithographic apparatus and manufacturing method
US10216096B2 (en) 2015-08-14 2019-02-26 Kla-Tencor Corporation Process-sensitive metrology systems and methods
US10101676B2 (en) 2015-09-23 2018-10-16 KLA—Tencor Corporation Spectroscopic beam profile overlay metrology
WO2017076702A2 (de) 2015-11-05 2017-05-11 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zur charakterisierung eines durch wenigstens einen lithographieschritt strukturierten wafers
US11126092B2 (en) * 2015-11-13 2021-09-21 Asml Netherlands B.V. Methods for determining an approximate value of a processing parameter at which a characteristic of the patterning process has a target value
EP3190464B1 (en) 2015-12-14 2021-08-11 IMEC vzw Method for inspecting a pattern of features on a semiconductor die
US11313809B1 (en) * 2016-05-04 2022-04-26 Kla-Tencor Corporation Process control metrology
US10438825B2 (en) 2016-08-29 2019-10-08 Kla-Tencor Corporation Spectral reflectometry for in-situ process monitoring and control
IL265585B (en) 2016-09-27 2022-09-01 Asml Netherlands Bv Metrology recipe selection
EP3299890A1 (en) * 2016-09-27 2018-03-28 ASML Netherlands B.V. Metrology recipe selection
CN109844917B (zh) 2016-10-13 2023-07-04 科磊股份有限公司 用于过程控制的计量系统及方法
FR3061301B1 (fr) * 2016-12-26 2020-09-04 Commissariat Energie Atomique Procede d'observation d'un objet
FR3061300B1 (fr) * 2016-12-26 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'observation d'un objet
US10209627B2 (en) 2017-01-06 2019-02-19 Kla-Tencor Corporation Systems and methods for focus-sensitive metrology targets
US10732516B2 (en) * 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
EP3467589A1 (en) * 2017-10-06 2019-04-10 ASML Netherlands B.V. Determining edge roughness parameters
CN110799903B (zh) * 2017-06-20 2021-11-16 Asml荷兰有限公司 确定边缘粗糙度参数
EP3422102A1 (en) * 2017-06-26 2019-01-02 ASML Netherlands B.V. Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
WO2019029933A1 (en) 2017-08-07 2019-02-14 Asml Netherlands B.V. COMPUTER METROLOGY
US10365211B2 (en) 2017-09-26 2019-07-30 Kla-Tencor Corporation Systems and methods for metrology beam stabilization
WO2019066891A1 (en) * 2017-09-29 2019-04-04 Intel Corporation SYSTEMS, METHODS AND APPARATUSES FOR IMPLEMENTING FAULT PREDICTION AND OPTIMIZATION OF WINDOW PROCESSING IN CHROME-FREE PHASE LITHOGRAPHY
US10446563B1 (en) 2018-04-04 2019-10-15 Texas Instruments Incorporated Partially disposed gate layer into the trenches
EP3647871A1 (en) * 2018-10-31 2020-05-06 ASML Netherlands B.V. Method of determing a value of a parameter of interest of a patterning process, device manufacturing method
DE102019212520A1 (de) 2019-08-21 2021-02-25 Carl Zeiss Smt Gmbh Diffraktives optisches Element für ein Prüfinterferometer
US12216411B2 (en) * 2019-12-18 2025-02-04 Cymer, Llc Predictive apparatus in a gas discharge light source
CN115220397B (zh) * 2022-06-15 2024-07-02 华中科技大学 一种基于指令域的数控加工工艺数据标记方法及系统

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908656A (en) 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH0289305A (ja) * 1988-09-27 1990-03-29 Nikon Corp リソグラフィ装置
KR100197191B1 (ko) 1994-11-14 1999-06-15 모리시다 요이치 레지스트 패턴 형성방법
US5956715A (en) * 1994-12-13 1999-09-21 Microsoft Corporation Method and system for controlling user access to a resource in a networked computing environment
US5629772A (en) 1994-12-20 1997-05-13 International Business Machines Corporation Monitoring of minimum features on a substrate
US5790254A (en) 1994-12-20 1998-08-04 International Business Machines Corporation Monitoring of minimum features on a substrate
US5607800A (en) 1995-02-15 1997-03-04 Lucent Technologies Inc. Method and arrangement for characterizing micro-size patterns
US5902703A (en) 1997-03-27 1999-05-11 Vlsi Technology, Inc. Method for measuring dimensional anomalies in photolithographed integrated circuits using overlay metrology, and masks therefor
US5965309A (en) 1997-08-28 1999-10-12 International Business Machines Corporation Focus or exposure dose parameter control system using tone reversing patterns
US5976740A (en) 1997-08-28 1999-11-02 International Business Machines Corporation Process for controlling exposure dose or focus parameters using tone reversing pattern
US6483580B1 (en) 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
US6016684A (en) 1998-03-10 2000-01-25 Vlsi Standards, Inc. Certification of an atomic-level step-height standard and instrument calibration with such standards
US5936738A (en) 1998-08-03 1999-08-10 International Business Machines Corporation Focus monitor for alternating phase shifted masks
US6466314B1 (en) * 1998-09-17 2002-10-15 Applied Materials, Inc. Reticle design inspection system
US6063531A (en) 1998-10-06 2000-05-16 Advanced Micro Devices, Inc. Focus monitor structure and method for lithography process
US6485872B1 (en) 1999-12-03 2002-11-26 Mks Instruments, Inc. Method and apparatus for measuring the composition and other properties of thin films utilizing infrared radiation
US6559953B1 (en) * 2000-05-16 2003-05-06 Intel Corporation Point diffraction interferometric mask inspection tool and method
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6429930B1 (en) * 2000-09-06 2002-08-06 Accent Optical Technologies, Inc. Determination of center of focus by diffraction signature analysis
US6513151B1 (en) 2000-09-14 2003-01-28 Advanced Micro Devices, Inc. Full flow focus exposure matrix analysis and electrical testing for new product mask evaluation
US7099005B1 (en) * 2000-09-27 2006-08-29 Kla-Tencor Technologies Corporation System for scatterometric measurements and applications
US6304999B1 (en) 2000-10-23 2001-10-16 Advanced Micro Devices, Inc. Method and apparatus for embedded process control framework in tool systems
US6433878B1 (en) 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
JP4565248B2 (ja) * 2001-01-30 2010-10-20 株式会社ニコン 位置検出装置およびその調整方法
KR100536646B1 (ko) * 2001-03-02 2005-12-14 액센트 옵티칼 테크놀로지스 인코포레이티드 산란 측정법을 이용한 라인 프로파일 비대칭 측정
US6650422B2 (en) * 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
US6501534B1 (en) 2001-04-30 2002-12-31 Advanced Micro Devices, Inc. Automated periodic focus and exposure calibration of a lithography stepper
US7382447B2 (en) * 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
US6614540B1 (en) * 2001-06-28 2003-09-02 Advanced Micro Devices, Inc. Method and apparatus for determining feature characteristics using scatterometry
US6884552B2 (en) * 2001-11-09 2005-04-26 Kla-Tencor Technologies Corporation Focus masking structures, focus patterns and measurements thereof
US6673638B1 (en) 2001-11-14 2004-01-06 Kla-Tencor Corporation Method and apparatus for the production of process sensitive lithographic features
US6778275B2 (en) 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US6982793B1 (en) 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
SG125926A1 (en) * 2002-11-01 2006-10-30 Asml Netherlands Bv Inspection method and device manufacturing method
US6879406B1 (en) * 2003-10-01 2005-04-12 Advanced Micro Devices, Inc. Use of scatterometry as a control tool in the manufacture of extreme UV masks

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015525902A (ja) * 2012-07-23 2015-09-07 エーエスエムエル ネザーランズ ビー．ブイ． 検査方法及び装置、リソグラフィシステム並びにデバイス製造方法
KR101793565B1 (ko) * 2012-07-23 2017-11-03 에이에스엠엘 네델란즈 비.브이. 검사 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
US11402320B2 (en) * 2018-02-26 2022-08-02 Jasco Corporation Phase difference control device

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US7352453B2 (en) 2008-04-01

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