JP4798693B2 - Yttria ceramic parts for plasma processing apparatus and method for manufacturing the same - Google Patents
Yttria ceramic parts for plasma processing apparatus and method for manufacturing the same Download PDFInfo
- Publication number
- JP4798693B2 JP4798693B2 JP2005163378A JP2005163378A JP4798693B2 JP 4798693 B2 JP4798693 B2 JP 4798693B2 JP 2005163378 A JP2005163378 A JP 2005163378A JP 2005163378 A JP2005163378 A JP 2005163378A JP 4798693 B2 JP4798693 B2 JP 4798693B2
- Authority
- JP
- Japan
- Prior art keywords
- yttria
- processing apparatus
- plasma processing
- raw material
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 title claims description 50
- 239000000919 ceramic Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title description 4
- 239000013078 crystal Substances 0.000 claims description 28
- 239000002994 raw material Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 9
- 239000011164 primary particle Substances 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000000428 dust Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000011575 calcium Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001354 calcination Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000009694 cold isostatic pressing Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
本発明は、半導体の製造に使用されるプラズマ処理装置のフォーカスリング、サセプター、クランプリング等として用いられるイットリア（酸化イットリウム：Ｙ2Ｏ3）セラミックス部品及びその製造方法に関する。 The present invention relates to a yttria (yttrium oxide: Y 2 O 3 ) ceramic part used as a focus ring, a susceptor, a clamp ring or the like of a plasma processing apparatus used for manufacturing a semiconductor and a method for manufacturing the same.
従来、この種のプラズマ処理装置用イットリアセラミックス部品としては、腐食ガスまたはそのプラズマを用いるウエハ処理プロセスにおいてウエハを保持するウエハ保持具であって、少なくともウエハ接触面が、金属微量成分の含有量が、重量基準で、Ｓｉ：２００ｐｐｍ以下、Ａｌ：１００ｐｐｍ以下、Ｎａ、Ｋ、Ｔｉ、Ｃｒ、Ｆｅ、Ｎｉの総量：２００ｐｐｍ以下であり、かつ表面粗さがＲａで０．５μｍ以下の酸化イットリウム焼結体で構成されているウエハ保持具が知られている（特許文献１参照）。 Conventionally, this type of yttria ceramic component for a plasma processing apparatus is a wafer holder for holding a wafer in a wafer processing process using a corrosive gas or plasma thereof, and at least the wafer contact surface has a trace amount of metal content. Sintered yttrium oxide with Si: 200 ppm or less, Al: 100 ppm or less, total amount of Na, K, Ti, Cr, Fe, Ni: 200 ppm or less and surface roughness Ra of 0.5 μm or less A wafer holder composed of a body is known (see Patent Document 1).
上記ウエハ保持具は、所定の原料粉末をポリエチレンポット中に、イオン交換水、有機分散剤、有機バインダーおよび鉄芯入りナイロンボールとともに装入して２４時間混合し、得られたスラリーをスプレードライヤーで乾燥し顆粒を作成して顆粒をＣＩＰ成形後、所定温度で焼成して、円盤状の焼結体を作製し、しかる後に、円盤状焼結体の上面を鏡面研磨して製造されている。 The wafer holder is prepared by charging predetermined raw material powder into a polyethylene pot together with ion-exchanged water, an organic dispersant, an organic binder and a nylon ball containing iron core for 24 hours and mixing the resulting slurry with a spray dryer. The granules are dried, and the granules are CIP-molded. Then, the granules are fired at a predetermined temperature to produce a disk-shaped sintered body, and then the upper surface of the disk-shaped sintered body is mirror-polished.
上述したウエハ保持具は、半導体製造工程等に用いられるハロゲン含有ガスプラズマ等の腐食雰囲気に対する耐食性が高く、金属による汚染が生じ難いと共に、パーティクルが生じ難い、というものである。 The wafer holder described above has high corrosion resistance against a corrosive atmosphere such as a halogen-containing gas plasma used in a semiconductor manufacturing process and the like, and is less likely to be contaminated with metal and less likely to generate particles.
しかし、従来のプラズマ処理装置用イットリアセラミックス部品及びその製造方法では、プラズマ処理装置で使用する場合、例えば、フッ素系、塩素系ガスを導入してプラズマを発生させ、シリコンウエーハをエッチングする際、高い耐プラズマ性を有すると共に、金属による汚染が生じ難い利点があるものの、イットリアセラミックス部品からダストが発生し、処理すべきシリコンウエーハに付着してパーティクル汚染を生じる不具合がある。 However, in the conventional yttria ceramic parts for plasma processing apparatus and the manufacturing method thereof, when used in the plasma processing apparatus, for example, when fluorine or chlorine gas is introduced to generate plasma and the silicon wafer is etched, it is expensive. In addition to being resistant to plasma and having the advantage that metal contamination is less likely to occur, dust is generated from the yttria ceramic parts and has the disadvantage of causing particle contamination by adhering to the silicon wafer to be processed.
イットリアセラミックス部品に微量の金属成分が含有していると、微量の金属成分は、イットリア結晶の結晶粒界に偏析し易い。
このような微量の金属成分を含有するイットリアセラミックス部品をプラズマ雰囲気に曝すと、金属成分は、プラズマ雰囲気においてイットリア結晶よりも腐食され易いため、結晶粒界から腐食が進行していく。そして、表面付近のイットリア結晶の粒界が腐食すると、イットリア結晶が脱落し、ダストとしてシリコンウエーハに付着するものである。
When yttria ceramic parts containing such a small amount of metal components are exposed to a plasma atmosphere, the metal components are more easily corroded than yttria crystals in the plasma atmosphere, and therefore corrosion proceeds from the crystal grain boundaries. When the grain boundary of the yttria crystal near the surface is corroded, the yttria crystal falls off and adheres to the silicon wafer as dust.
本発明は、ダストの発生を抑制して、処理すべき半導体のパーティクル汚染を格段に低減し得るプラズマ処理装置用イットリアセラミックス部品及びその製造方法の提供を課題とする。 It is an object of the present invention to provide an yttria ceramic component for a plasma processing apparatus and a method for manufacturing the same that can suppress the generation of dust and significantly reduce particle contamination of a semiconductor to be processed.
本発明のプラズマ処理装置用イットリアセラミックス部品は、純度が９９．９ｗｔ％以上のイットリア原料を用いて焼成された焼結体であり、かつ、結晶粒径の分布がＤ１０：３〜１０μｍ、Ｄ９０：１３〜３０μｍであり、金属微量成分の含有量が重量基準でＳｉ：１００ｐｐｍ以下、Ｃａ：２０ｐｐｍ以下であることを特徴とする。
ここで、Ｄ１０、Ｄ９０とは、任意のイットリアの結晶粒子１００個における結晶粒径の小さい方から１０番目、９０番目ということである。
The yttria ceramic component for a plasma processing apparatus of the present invention is a sintered body fired by using a yttria raw material having a purity of 99.9 wt% or more, and has a crystal grain size distribution of D10: 3 to 10 μm, D90: It is 13-30 micrometers , Content of a metal trace component is Si: 100 ppm or less and Ca: 20 ppm or less on the basis of weight .
Here, D10 and D90 are the 10th and 90th from the smallest crystal grain size in 100 arbitrary yttria crystal grains.
前記イットリアセラミックス部品は、さらに、結晶粒径の分布がＤ５０：１０〜１５μｍであることが好ましい。
ここで、Ｄ５０とは、上記と同様に、任意のイットリアの結晶粒子１００個における結晶粒径の小さい方から５０番目ということである。
The yttria ceramic part preferably further has a crystal grain size distribution of D50: 10 to 15 μm.
Here, D50 is the 50th from the smallest crystal grain size in 100 arbitrary yttria crystal grains, as described above.
一方、嵩密度は、４．９０ｇ／ｃｍ3以上であることが好ましい。 On the other hand, the bulk density is preferably 4.90 g / cm 3 or more.
又、本発明のプラズマ処理装置用イットリアセラミックス部品の製造方法は、純度が９９．９ｗｔ％以上、一次粒子径がＤ５０：０．０１〜１μｍのイットリア原料を造粒して成形し、成形体を大気中で仮焼した後、仮焼体を水素ガス雰囲気において１７００〜１８５０℃の温度で焼成することを特徴とする。 In addition, the method for producing yttria ceramic parts for a plasma processing apparatus of the present invention comprises forming and molding a yttria raw material having a purity of 99.9 wt% or more and a primary particle diameter of D50: 0.01 to 1 μm. After calcining in the air, the calcined body is fired at a temperature of 1700 to 1850 ° C. in a hydrogen gas atmosphere.
本発明のプラズマ処理装置用イットリアセラミックス部品及びその製造方法によれば、プラズマ雰囲気におけるイットリアセラミックスの侵食は結晶粒界から進むが、イットリア結晶粒子が大きくなることにより、その結晶粒界の長さが長くなり、結晶粒子の脱落が少なくなるので、ダストの発生を大幅に抑制して、処理すべき半導体のパーティクル汚染を格段に低減することができる。 According to the yttria ceramic component for plasma processing apparatus of the present invention and the manufacturing method thereof, the erosion of yttria ceramics in the plasma atmosphere proceeds from the crystal grain boundary. Since it becomes longer and crystal grains fall off, generation of dust can be greatly suppressed, and particle contamination of the semiconductor to be processed can be significantly reduced.
イットリア原料の純度が、９９．９ｗｔ％未満であると、目的とする４．９０ｇ／ｃｍ3以上の嵩密度が得られない。
イットリア原料の純度は、９９．９５ｗｔ％以上がより好ましい。
If the purity of the yttria raw material is less than 99.9 wt%, the target bulk density of 4.90 g / cm 3 or more cannot be obtained.
The purity of the yttria raw material is more preferably 99.95 wt% or more.
イットリアの結晶粒界のＤ１０が、３μｍ未満であると、プラズマ処理装置内での使用中にダストが発生し易い。一方、１０μｍを超えると、強度が低下する。
イットリアの結晶粒径のＤ１０は、５〜７μｍがより好ましい。
又、イットリアの結晶粒径のＤ９０が、１３μｍ未満であると、プラズマ処理装置内で使用中にダストが発生し易い。一方、３０μｍを超えると、イットリアセラミックスの強度が低下する。
イットリアの結晶粒径のＤ９０は、１５〜２５μｍがより好ましい。
When D10 of the grain boundary of yttria is less than 3 μm, dust is likely to be generated during use in the plasma processing apparatus. On the other hand, when it exceeds 10 μm, the strength decreases.
As for D10 of the crystal grain diameter of yttria, 5-7 micrometers is more preferable.
In addition, when D90 of the yttria crystal grain size is less than 13 μm, dust is easily generated during use in the plasma processing apparatus. On the other hand, when it exceeds 30 μm, the strength of the yttria ceramics decreases.
D90 of the yttria crystal grain size is more preferably 15 to 25 μm.
一方、嵩密度が、４．９０ｇ／ｃｍ3未満であると、焼結体内の残留気泡が多く、プラズマ処理装置内での使用中、例えば、半導体をエッチングする際に、残留気泡に起因する結晶粒界からのエッチングが起こり易く、ダストの発生の原因となる。
嵩密度は、４．９５ｇ／ｃｍ3以上がより好ましい。
On the other hand, if the bulk density is less than 4.90 g / cm 3 , there are many residual bubbles in the sintered body, and crystals that are caused by the residual bubbles during use in the plasma processing apparatus, for example, when etching a semiconductor. Etching from the grain boundary is likely to occur, causing dust generation.
The bulk density is more preferably 4.95 g / cm 3 or more.
又、金属微量成分の含有量は、重量基準でＳｉ（シリコン）が１００ｐｐｍを超え、かつ、Ｃａ（カルシウム）が２０ｐｐｍを超えると、プラズマ処理装置内での使用中、例えば、半導体をエッチングする際に、不純物に起因するダストが発生し易くなる。
金属微量成分の含有量は、重量基準でＳｉ：５０ｐｐｍ以下、Ｃａ：１０ｐｐｍ以下がより好ましい。
In addition, when the content of the metal trace component exceeds 100 ppm for Si (silicon) and exceeds 20 ppm for Ca (calcium) on a weight basis, for example, when etching a semiconductor during use in a plasma processing apparatus. In addition, dust due to impurities is likely to be generated.
As for content of a metal trace component, Si: 50 ppm or less and Ca: 10 ppm or less are more preferable on a weight basis.
又、イットリア原料の一次粒子径のＤ５０が０．０１μｍ未満であると、製造する際に取り扱いが困難になる、焼成時の収縮量が安定しない、等の不具合が生じる。一方、１μｍを超えると、目的とする４．９０ｇ／ｃｍ3以上の嵩密度が得られない。
イットリア原料の一次粒子径のＤ５０は、０．３〜０．８μｍがより好ましい。
Further, when the primary particle diameter D50 of the yttria raw material is less than 0.01 μm, problems such as difficulty in handling during manufacture and unstable shrinkage during firing occur. On the other hand, if it exceeds 1 μm, the target bulk density of 4.90 g / cm 3 or more cannot be obtained.
The primary particle diameter D50 of the yttria raw material is more preferably 0.3 to 0.8 μm.
イットリア原料の造粒は、スプレードライヤーにより行うことが好ましい。 The yttria raw material is preferably granulated with a spray dryer.
成形は、ＣＩＰ（冷間静水圧プレス）により行うことが好ましい。 Molding is preferably performed by CIP (cold isostatic pressing).
成形体の仮焼温度は、８００〜１２００℃が好ましい。
成形体の仮焼温度が、８００℃未満であると、脱脂が不十分であったり、その後の取扱に耐えられる強度が得られない。一方、１２００℃を超えると、大気からの汚染が多くなり、仮焼体の純度が低下する。
The calcining temperature of the molded body is preferably 800 to 1200 ° C.
When the calcining temperature of the molded body is less than 800 ° C., degreasing is insufficient or the strength to withstand subsequent handling cannot be obtained. On the other hand, when it exceeds 1200 ° C., contamination from the air increases, and the purity of the calcined body is lowered.
仮焼体の焼成温度が、１７００℃未満であると、目的とする４．９０ｇ／ｃｍ3以上の嵩密度が得られない。一方、１８５０℃を超えると、焼結体の強度が低下する。
仮焼体の焼成温度は、１７５０〜１８２０℃がより好ましい。
When the calcining temperature of the calcined body is lower than 1700 ° C., the target bulk density of 4.90 g / cm 3 or more cannot be obtained. On the other hand, when the temperature exceeds 1850 ° C., the strength of the sintered body decreases.
The firing temperature of the calcined body is more preferably 1750 to 1820 ° C.
以下、本発明を実施例に基づきさらに具体的に説明するが、本発明は下記の実施例により制限されるものではない。
［実施例１］
先ず、純度が９９．９ｗｔ％のイットリア原料を粉砕して一次粒子径のＤ５０が０．７μｍのイットリア原料粉末を得、このイットリア原料粉末に２ｗｔ％のバインダー成分（ＰＶＡ：ポリビニルアルコール）を添加し、スプレードライヤーにより造粒した後、造粒粉をＣＩＰによって１５００ｋｇｆ／ｃｍ2の圧力で成形して成形体を得た。
次に、成形体を大気中において９００℃の温度で仮焼（脱脂）した後、仮焼体を水素ガス（Ｈ2）雰囲気において１８００℃の温度で焼成して焼結体とした（表１参照）。
EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example, this invention is not restrict | limited by the following Example.
[Example 1]
First, a yttria raw material having a purity of 99.9 wt% is pulverized to obtain an yttria raw material powder having a primary particle diameter D50 of 0.7 μm, and a binder component (PVA: polyvinyl alcohol) of 2 wt% is added to the yttria raw material powder. After granulating with a spray dryer, the granulated powder was molded with CIP at a pressure of 1500 kgf / cm 2 to obtain a molded body.
Next, after calcining (degreasing) the molded body in the atmosphere at a temperature of 900 ° C., the calcined body was fired at a temperature of 1800 ° C. in a hydrogen gas (H 2 ) atmosphere to obtain a sintered body (Table 1). reference).
得られた焼結体（イットリアセラミックス）の結晶粒をマイクロスコープで観察し、結晶粒径の分布を測定（任意の１００個の結晶粒の粒径を測定）したところ、Ｄ１０：７μｍ、Ｄ５０：１０μｍ、Ｄ９０：１５μｍであった（表１参照）。
又、焼結体の嵩密度は、４．９７ｇ／ｃｍ3であり、かつ、その含有金属は、Ｓｉ：２５ｐｐｍ、Ｃａ：５ｐｐｍであった（表１参照）。
When the crystal grains of the obtained sintered body (yttria ceramics) were observed with a microscope and the distribution of crystal grain size was measured (the grain size of any 100 crystal grains was measured), D10: 7 μm, D50: 10 μm and D90: 15 μm (see Table 1).
The bulk density of the sintered body was 4.97 g / cm 3 , and the contained metals were Si: 25 ppm and Ca: 5 ppm (see Table 1).
次いで、上記焼結体を用いてフォーカスリング（イットリアセラミックス部品）を作製し、このフォーカスリングを使用して直径２００ｍｍのシリコンウエーハのプラズマ処理を行った場合のシリコンウエーハ上のダスト数は、２個であった（表１参照）。 Next, a focus ring (yttria ceramic part) is manufactured using the sintered body, and the number of dusts on the silicon wafer is 2 when the focus ring is used to perform a plasma treatment on a silicon wafer having a diameter of 200 mm. (See Table 1).
［実施例２］
実施例１と同様にして成形体を得た後、成形体を大気中において９００℃の温度で仮焼（脱脂）した後、仮焼体を水素ガス（Ｈ2）雰囲気において１８１０℃の温度で焼成して焼結体とした（表１参照）。
[Example 2]
After obtaining a molded body in the same manner as in Example 1, the molded body was calcined (degreasing) at a temperature of 900 ° C. in the atmosphere, and then the calcined body was heated at a temperature of 1810 ° C. in a hydrogen gas (H 2 ) atmosphere. Firing was made into a sintered body (see Table 1).
得られた焼結体（イットリアセラミックス）の結晶粒をマイクロスコープで観察し、結晶粒径の分布を測定（任意の１００個の結晶粒の粒径を測定）したところ、Ｄ１０：７μｍ、Ｄ５０：１５μｍ、Ｄ９０：２５μｍであった（表１参照）。
又、焼結体の嵩密度は、４．９８ｇ／ｃｍ3であり、かつ、その含有金属は、Ｓｉ：２５ｐｐｍ、Ｃａ：５ｐｐｍであった（表１参照）。
When the crystal grains of the obtained sintered body (yttria ceramics) were observed with a microscope and the distribution of crystal grain size was measured (the grain size of any 100 crystal grains was measured), D10: 7 μm, D50: 15 μm and D90: 25 μm (see Table 1).
The bulk density of the sintered body was 4.98 g / cm 3 , and the contained metals were Si: 25 ppm and Ca: 5 ppm (see Table 1).
次いで、上記焼結体を用いてフォーカスリング（イットリアセラミックス部品）を作製し、このフォーカスリングを使用して直径２００ｍｍのシリコンウエーハのプラズマ処理を行った場合のシリコンウエーハ上のダスト数は、１個であった（表１参照）。 Next, a focus ring (yttria ceramic part) is produced using the sintered body, and the number of dusts on the silicon wafer is 1 when a silicon wafer having a diameter of 200 mm is subjected to plasma treatment using the focus ring. (See Table 1).
［比較例１］
純度が９９．９ｗｔ％のイットリア原料を粉砕して一次粒子径のＤ５０が１．０μｍのイットリア原料粉末を得、このイットリア原料粉末を用いる他は実施例と同一条件で焼結体を製造した（表１参照）。
[Comparative Example 1]
An yttria raw material having a purity of 99.9 wt% was pulverized to obtain an yttria raw material powder having a primary particle diameter D50 of 1.0 μm, and a sintered body was produced under the same conditions as in the examples except that this yttria raw material powder was used ( (See Table 1).
得られた焼結体は、嵩密度が４．８５ｇ／ｃｍ3であると共に、その結晶粒径の分布を実施例と同様にして測定したところ、Ｄ１０：２μｍ、Ｄ５０：４μｍ、Ｄ９０：６μｍであった（表１参照）。 The obtained sintered body had a bulk density of 4.85 g / cm 3 , and its crystal grain size distribution was measured in the same manner as in the example. As a result, D10: 2 μm, D50: 4 μm, D90: 6 μm. (See Table 1).
次に、上記焼結体を用いてフォーカスリングを作製し、このフォーカスリングを使用して直径２００ｍｍのシリコンウエーハのプラズマ処理を行った場合のシリコンウエーハ上のダスト数は、１５個であった（表１参照）。
Next, a focus ring was produced using the sintered body, and the number of dusts on the silicon wafer was 15 when the silicon wafer having a diameter of 200 mm was subjected to plasma treatment using the focus ring ( (See Table 1).
［比較例２］
実施例と同様にして仮焼体を得た後、仮焼体を大気中において１７００℃の温度で焼成して焼結体とした（表１参照）。
[Comparative Example 2]
After obtaining a calcined body in the same manner as in the examples, the calcined body was fired at 1700 ° C. in the atmosphere to obtain a sintered body (see Table 1).
得られた焼結体は、嵩密度が４．９０ｇ／ｃｍ3であると共に、その結晶粒径の分布を実施例と同様にして測定したところ、Ｄ１０：２μｍ、Ｄ５０：４μｍ、Ｄ９０：７μｍであった（表１参照）。 The obtained sintered body had a bulk density of 4.90 g / cm 3 , and its crystal grain size distribution was measured in the same manner as in the example. As a result, D10: 2 μm, D50: 4 μm, D90: 7 μm. (See Table 1).
次に、上記焼結体を用いてフォーカスリングを作製し、このフォーカスリングを使用して直径２００ｍｍのシリコンウエーハのプラズマ処理を行った場合のシリコンウエーハ上のダスト数は、２５個であった（表１参照）。 Next, a focus ring was produced using the sintered body, and the number of dusts on the silicon wafer was 25 when this focus ring was used to perform plasma treatment on a silicon wafer having a diameter of 200 mm ( (See Table 1).
［比較例３］
先ず、実施例１と同様にしてイットリア原料粉末を得、このイットリア原料粉末に２ｗｔ％のバインダー成分（ＰＶＡ）及び焼結助剤としてのＳｉ成分を重量換算で２００ｐｐｍ（Ｓｉとして）を添加した後、実施例と同様にして成形体、仮焼体及び焼結体とした（表１参照）。
[Comparative Example 3]
First, after obtaining yttria raw material powder in the same manner as in Example 1, and adding 2 wt% binder component (PVA) and Si component as a sintering aid to this yttria raw material powder in an amount of 200 ppm (as Si). In the same manner as in Examples, a molded body, a calcined body, and a sintered body were obtained (see Table 1).
得られた焼結体は、嵩密度が４．９７ｇ／ｃｍ3であると共に、その結晶粒径の分布を実施例と同様にして測定したところ、Ｄ１０：１０μｍ、Ｄ５０：１６μｍ、Ｄ９０：２５μｍであり、かつ、金属微量成分の含有量は、重量基準でＳｉ：１５０ｐｐｍであった（表１参照）。 The obtained sintered body had a bulk density of 4.97 g / cm 3 , and its crystal grain size distribution was measured in the same manner as in the example. As a result, D10: 10 μm, D50: 16 μm, D90: 25 μm. In addition, the content of the metal trace component was Si: 150 ppm on a weight basis (see Table 1).
次に、上記焼結体を用いてフォーカスリングを作製し、このフォーカスリングを使用して直径２００ｍｍのシリコンウエーハのプラズマ処理を行った場合のシリコンウエーハ上のダスト数は、１０個であった（表１参照）。 Next, a focus ring was prepared using the sintered body, and the number of dusts on the silicon wafer when the focus ring was used to perform plasma treatment on a silicon wafer having a diameter of 200 mm was 10 ( (See Table 1).
Claims (4)
純度が９９．９ｗｔ％以上、一次粒子径がＤ５０：０．３〜０．８μｍのイットリア原料を造粒して成形し、成形体を大気中で仮焼した後、仮焼体を水素ガス雰囲気において１７００〜１８５０℃の温度で焼成することを特徴とするプラズマ処理装置用イットリアセラミックス部品の製造方法。 A method for producing the yttria ceramic part for a plasma processing apparatus according to any one of claims 1 to 3,
A yttria raw material having a purity of 99.9 wt% or more and a primary particle diameter of D50: 0.3 to 0.8 μm is granulated and molded, and the molded body is calcined in the atmosphere. A method for producing a yttria ceramic component for a plasma processing apparatus, comprising firing at a temperature of 1700 to 1850 ° C. in an atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005163378A JP4798693B2 (en) | 2004-06-07 | 2005-06-03 | Yttria ceramic parts for plasma processing apparatus and method for manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004168106 | 2004-06-07 | ||
| JP2004168106 | 2004-06-07 | ||
| JP2005163378A JP4798693B2 (en) | 2004-06-07 | 2005-06-03 | Yttria ceramic parts for plasma processing apparatus and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006021990A JP2006021990A (en) | 2006-01-26 |
| JP4798693B2 true JP4798693B2 (en) | 2011-10-19 |
Family
ID=35795537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005163378A Active JP4798693B2 (en) | 2004-06-07 | 2005-06-03 | Yttria ceramic parts for plasma processing apparatus and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4798693B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007063070A (en) * | 2005-08-31 | 2007-03-15 | Toshiba Ceramics Co Ltd | Method for manufacturing plasma-resistant yttria sintered compact |
| US7964818B2 (en) | 2006-10-30 | 2011-06-21 | Applied Materials, Inc. | Method and apparatus for photomask etching |
| US7919722B2 (en) * | 2006-10-30 | 2011-04-05 | Applied Materials, Inc. | Method for fabricating plasma reactor parts |
| EP2123615A4 (en) | 2007-01-17 | 2012-05-09 | Toto Ltd | Ceramic member and corrosion-resistant member |
| JP2009215149A (en) * | 2008-02-14 | 2009-09-24 | Sumitomo Chemical Co Ltd | Sintered body and thermoelectric conversion material |
| US10655224B2 (en) * | 2016-12-20 | 2020-05-19 | Lam Research Corporation | Conical wafer centering and holding device for semiconductor processing |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4755492A (en) * | 1986-10-06 | 1988-07-05 | General Electric Company | Yttrium oxide ceramic body |
| JPH04164810A (en) * | 1990-10-26 | 1992-06-10 | Shin Etsu Chem Co Ltd | Production of rare earth element oxide |
| JPH06211573A (en) * | 1993-01-18 | 1994-08-02 | Kurosaki Refract Co Ltd | Production of transparent y2o3 sintered compact |
| JP2002068838A (en) * | 2000-08-23 | 2002-03-08 | Toshiba Ceramics Co Ltd | Plasma resistant member and method for manufacturing the same |
| JP2002255647A (en) * | 2001-02-27 | 2002-09-11 | Nihon Ceratec Co Ltd | Yttrium oxide sintered body and wafer holding tool |
| JP4033451B2 (en) * | 2001-07-05 | 2008-01-16 | 神島化学工業株式会社 | Translucent rare earth oxide sintered body and method for producing the same |
| JP2004269350A (en) * | 2003-02-17 | 2004-09-30 | Toshiba Ceramics Co Ltd | Yttrium oxide (y2o3) sintered compact and method of manufacturing the same |
| DE112004001391B4 (en) * | 2003-07-29 | 2014-07-17 | Kyocera Corp. | Corrosion resistant component and method for producing the same and a component for a semiconductor or liquid crystal generating equipment |
-
2005
- 2005-06-03 JP JP2005163378A patent/JP4798693B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006021990A (en) | 2006-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5466831B2 (en) | Yttria sintered body and member for plasma process equipment | |
| JP4987238B2 (en) | Aluminum nitride sintered body, semiconductor manufacturing member, and aluminum nitride sintered body manufacturing method | |
| JP2000001362A (en) | Corrosion resistant ceramic material | |
| JP4798693B2 (en) | Yttria ceramic parts for plasma processing apparatus and method for manufacturing the same | |
| JP2009068067A (en) | Plasma resistant ceramics sprayed coating | |
| KR20230012573A (en) | Ceramic sintered body containing magnesium aluminate spinel | |
| JP2010083729A (en) | Alumina-based sintered compact excellent in corrosion resistance, heat shock resistance, and durability | |
| JP2006069843A (en) | Ceramic member for semiconductor manufacturing apparatus | |
| JP2010064937A (en) | Ceramic for plasma treatment apparatuses | |
| JP4570195B2 (en) | BORON CARBIDE BONDED BODY, ITS MANUFACTURING METHOD, AND PLASMA RESISTANT MEMBER | |
| JP2010077017A (en) | Corrosion-resistant member and method for production thereof | |
| TWI385138B (en) | Ceramic components and corrosion resistance components | |
| JP2009234877A (en) | Member used for plasma processing apparatus | |
| JP3716386B2 (en) | Plasma-resistant alumina ceramics and method for producing the same | |
| JP3769416B2 (en) | Components for plasma processing equipment | |
| JP2007223828A (en) | Yttria ceramic sintered compact and method of manufacturing the same | |
| JP2008007350A (en) | Yttria ceramic sintered compact | |
| JP2007326744A (en) | Plasma resistant ceramic member | |
| TWI650301B (en) | Magnesium oxide ceramic film, element for semiconductor manufacturing device, and method for producing magnesium oxide ceramic film | |
| JP4376881B2 (en) | Yttria ceramic sintered body and manufacturing method thereof | |
| JP3732966B2 (en) | Corrosion resistant material | |
| JP2008195973A (en) | Ceramics for plasma treatment system, and its manufacturing method | |
| JP4771374B2 (en) | Yttria ceramic fired body | |
| JP2000247728A (en) | Alumina ceramic sintered compact having excellent corrosion resistance | |
| JP4651145B2 (en) | Corrosion resistant ceramics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20070711 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080306 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110117 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110121 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110317 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110729 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110729 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140812 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4798693 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |