JP4787230B2 - 高真空、大流量バブリング容器用の撥ねよけおよび導入部拡散器 - Google Patents
高真空、大流量バブリング容器用の撥ねよけおよび導入部拡散器 Download PDFInfo
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- JP4787230B2 JP4787230B2 JP2007319061A JP2007319061A JP4787230B2 JP 4787230 B2 JP4787230 B2 JP 4787230B2 JP 2007319061 A JP2007319061 A JP 2007319061A JP 2007319061 A JP2007319061 A JP 2007319061A JP 4787230 B2 JP4787230 B2 JP 4787230B2
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- 230000005587 bubbling Effects 0.000 title claims description 91
- 239000005871 repellent Substances 0.000 title description 4
- 239000007788 liquid Substances 0.000 claims description 46
- 239000000126 substance Substances 0.000 claims description 36
- 239000012159 carrier gas Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 239000013064 chemical raw material Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims 2
- 239000012707 chemical precursor Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000000443 aerosol Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000012263 liquid product Substances 0.000 description 4
- 238000005470 impregnation Methods 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- Chemical & Material Sciences (AREA)
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Description
Claims (20)
- 気泡サイズを低減する出口であり、バブリング装置の床面に隣接した出口を末端とする浸漬管導入部、および浸漬管の出口とバブリング装置の排出口の間に位置する少なくとも1つのバッフルディスクを有するバブリング装置であって、ディスクは、バッフルディスクとバブリング装置の内壁との間に狭い環状の空間を与えるように構成されていて、バブリング装置の排出口に液滴が入ることを最小化することが出来、バッフルディスクは下向きの凹形の形状である、バブリング装置。
- 気泡サイズを低減する出口を末端とする浸漬管が、長手に延在した円筒形の拡散器であることを特徴とする請求項1記載のバブリング装置。
- 拡散器が多孔性の金属フリットで構成されている請求項2記載のバブリング装置。
- 多孔性の金属フリットが1μm以上の粒子をろ過する開孔度であることを特徴とする請求項3記載のバブリング装置。
- 多孔性の金属フリットが1μm以上の粒子を90%を超えてろ過する開孔度であることを特徴とする請求項4記載のバブリング装置。
- 拡散器がバブリング容器の床面の液だめに位置しており、気泡が拡散器の外側を抜け出ることと液体が液だめ中で拡散器を取り囲んで存在することを可能にするに十分なほど、該液だめが拡散器の外側寸法よりも大きな形状を有することを特徴とする請求項2から5のいずれか1項記載のバブリング装置。
- 液だめが、拡散器よりも大きい、部分的に長手に延在した円筒形であることを特徴とする請求項6記載のバブリング装置。
- バブリング装置の排出口への入口が、バブリング装置の排出口へ液体が入ることを最小化する多孔性のフリットを有することを特徴とする請求項1から7のいずれか1項記載のバブリング装置。
- バブリング装置の排出口への入口が、バブリング装置の排出口へ液体が入ることを最小化するエルボー構造を有しており、かつエルボー構造の末端は、バッフルディスクの外側の円周または周囲の縁から離れて半径方向に内側に、そして容器の側壁によって形成される円筒の中心軸の方向に向いていることを特徴とする請求項1から7のいずれか1項記載のバブリング装置。
- バブリング装置の排出口への入口が、バブリング装置の排出口へ液体が入ることを最小化するT形構造を有しており、かつT形構造は、バッフルディスクの半径方向に向いていることを特徴とする請求項1から7のいずれか1項記載のバブリング装置。
- 上側のバッフルディスクと下側のバッフルディスクを含む少なくとも2つのバッフルディスクを有するバブリング装置であって、下側のバッフルディスクが穿孔をその中に有することを特徴とする請求項1から10のいずれか1項記載のバブリング装置。
- 上側のバッフルディスクと下側のバッフルディスクを含む少なくとも2つのバッフルディスクを有するバブリング装置であって、上側のバッフルディスクが多孔性の金属フリットで作られていることを特徴とする請求項1から11のいずれか1項記載のバブリング装置。
- バブリング装置が円筒形の形状を有することを特徴とする請求項1から12のいずれか1項記載のバブリング装置。
- バッフルディスクが円形であることを特徴とする請求項13記載のバブリング装置。
- 担体ガスをバブリング容器中へと供給するための、気泡サイズを低減する多孔性の金属フリットの拡散器出口を末端とする浸漬管導入部、および円形で下側に凹形の形状を有する2つのバッフルディスクを有する円筒形の蒸気発生バブリング容器であって、2つのバッフルディスクは上側のバッフルディスクおよび下側のバッフルディスクを含み、それらは浸漬管導入部の出口とバブリング容器の出口の間に位置しており、バッフルディスクの円周の周囲の外側の縁とバブリング容器の内壁との間に狭い環状の空間を提供するように構成されており、担体ガスがバブリング容器の液体内容物を通してバブリングされ、バブリング容器から蒸気として液体を供給するときに、液滴がバブリング容器の排出口に入ることを最小化することができ、またバブリング容器の排出口の入口がエルボーおよびT形構造からなる群から選ばれる形状を有しており、かつエルボー構造の末端は、バッフルディスクの外側の円周または周囲の縁から離れて半径方向に内側に、そして容器の側壁によって形成される円筒の中心軸の方向に向いており、そしてT形構造は、バッフルディスクの半径方向に向いているバブリング容器。
- バブリング装置から化学物質原料蒸気を供給する方法であって、担体ガスをバブリング装置の浸漬管を通して通過させ、そしてさらに気泡サイズを低減する出口を通して通過させること、バブリング装置から液体化学物質原料を担体ガスに同伴させること、同伴された化学物質原料および担体ガスを、バッフルディスクの外周とバブリング装置側壁の内面との狭い環状の空間において、少なくとも1つのバッフルディスクを過ぎて通過させることを含み、バッフルディスクは下向きの凹形の形状である、方法。
- 担体ガスが、長手に延在した円筒形の形状の多孔性の金属フリット拡散器を、気泡サイズを低減する出口として、これを通して通過することを特徴とする請求項16記載の方法。
- 拡散器がバブリング装置の底面の液だめの中に位置していることを特徴とする請求項17記載の方法。
- 液体化学物質原料を同伴した担体ガスがバブリング装置からエルボー形状の排出口中へ供給され、かつエルボー構造の末端は、バッフルディスクの外側の円周または周囲の縁から離れて半径方向に内側に、そして容器の側壁によって形成される円筒の中心軸の方向に向いていることを特徴とする請求項16から18のいずれか1項記載の方法。
- 液体化学物質原料を同伴した担体ガスがバブリング装置からT形構造の排出口中へ供給され、かつT形構造は、バッフルディスクの半径方向に向いていることを特徴とする請求項16から18のいずれか1項記載の方法。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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US87520006P | 2006-12-15 | 2006-12-15 | |
US60/875,200 | 2006-12-15 | ||
US90837607P | 2007-03-27 | 2007-03-27 | |
US60/908,376 | 2007-03-27 | ||
US11/939,109 | 2007-11-13 | ||
US11/939,109 US8708320B2 (en) | 2006-12-15 | 2007-11-13 | Splashguard and inlet diffuser for high vacuum, high flow bubbler vessel |
Publications (2)
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JP2008150709A JP2008150709A (ja) | 2008-07-03 |
JP4787230B2 true JP4787230B2 (ja) | 2011-10-05 |
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JP2007319061A Active JP4787230B2 (ja) | 2006-12-15 | 2007-12-11 | 高真空、大流量バブリング容器用の撥ねよけおよび導入部拡散器 |
Country Status (6)
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US (3) | US8708320B2 (ja) |
EP (1) | EP1932942B1 (ja) |
JP (1) | JP4787230B2 (ja) |
KR (1) | KR100996344B1 (ja) |
CN (1) | CN101205604B (ja) |
TW (1) | TWI369414B (ja) |
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TWI480418B (zh) * | 2012-01-16 | 2015-04-11 | Air Prod & Chem | 用於高流量真空氣泡器容器的防濺器 |
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-
2007
- 2007-11-13 US US11/939,109 patent/US8708320B2/en active Active
- 2007-12-10 KR KR1020070127377A patent/KR100996344B1/ko active IP Right Grant
- 2007-12-11 TW TW096147313A patent/TWI369414B/zh active
- 2007-12-11 JP JP2007319061A patent/JP4787230B2/ja active Active
- 2007-12-14 CN CN2007103009366A patent/CN101205604B/zh active Active
- 2007-12-14 EP EP07123198.9A patent/EP1932942B1/en active Active
-
2014
- 2014-03-12 US US14/205,786 patent/US9435027B2/en active Active
- 2014-03-12 US US14/205,601 patent/US20140193578A1/en not_active Abandoned
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EP1932942B1 (en) | 2018-05-16 |
EP1932942A3 (en) | 2011-05-11 |
US20140191423A1 (en) | 2014-07-10 |
TWI369414B (en) | 2012-08-01 |
KR20080055644A (ko) | 2008-06-19 |
US20140193578A1 (en) | 2014-07-10 |
US8708320B2 (en) | 2014-04-29 |
CN101205604A (zh) | 2008-06-25 |
JP2008150709A (ja) | 2008-07-03 |
CN101205604B (zh) | 2012-07-04 |
TW200829715A (en) | 2008-07-16 |
EP1932942A2 (en) | 2008-06-18 |
US20080143002A1 (en) | 2008-06-19 |
US9435027B2 (en) | 2016-09-06 |
KR100996344B1 (ko) | 2010-11-25 |
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