JP4777203B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4777203B2 JP4777203B2 JP2006260304A JP2006260304A JP4777203B2 JP 4777203 B2 JP4777203 B2 JP 4777203B2 JP 2006260304 A JP2006260304 A JP 2006260304A JP 2006260304 A JP2006260304 A JP 2006260304A JP 4777203 B2 JP4777203 B2 JP 4777203B2
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- electrode layer
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- drain electrode
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| TWI626744B (zh) * | 2008-07-31 | 2018-06-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| JP2010056541A (ja) | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US9666719B2 (en) | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5480554B2 (ja) * | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5608347B2 (ja) * | 2008-08-08 | 2014-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| KR101634411B1 (ko) | 2008-10-31 | 2016-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 표시 장치 및 전자 장치 |
| US8841661B2 (en) * | 2009-02-25 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof |
| KR101107158B1 (ko) * | 2009-07-10 | 2012-01-25 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR102009813B1 (ko) | 2009-09-16 | 2019-08-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 이의 제조 방법 |
| KR102106817B1 (ko) * | 2018-10-30 | 2020-05-14 | 재단법인대구경북과학기술원 | 색순도 조절 다층 구조 필터 및 이의 제조 방법 |
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| JP2002100621A (ja) * | 2000-09-20 | 2002-04-05 | Seiko Epson Corp | 成膜装置、成膜方法、これにより成膜された基板及びこの基板を用いた液晶装置 |
| JP2003133691A (ja) * | 2001-10-22 | 2003-05-09 | Seiko Epson Corp | 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体 |
| JP4566578B2 (ja) * | 2003-02-24 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 薄膜集積回路の作製方法 |
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