JP4769056B2 - Wiring board and method of manufacturing the same - Google Patents

Wiring board and method of manufacturing the same Download PDF

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JP4769056B2
JP4769056B2 JP2005295477A JP2005295477A JP4769056B2 JP 4769056 B2 JP4769056 B2 JP 4769056B2 JP 2005295477 A JP2005295477 A JP 2005295477A JP 2005295477 A JP2005295477 A JP 2005295477A JP 4769056 B2 JP4769056 B2 JP 4769056B2
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conductor
opening
plating
wiring board
insulating layer
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JP2007103878A (en
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聖二 森
達也 伊藤
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NGK Spark Plug Co Ltd
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NGK Spark Plug Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Manufacturing Of Printed Wiring (AREA)
  • Wire Bonding (AREA)

Description

本発明は、基板表面に外部接続端子としての導体バンプを有する配線基板及びその製法方法に関する。   The present invention relates to a wiring board having conductor bumps as external connection terminals on the surface of the board and a method for manufacturing the same.

従来より、半導体集積回路素子(以下「ICチップ」という)が搭載される配線基板は、ICチップ接続用の外部接続端子として、基板表面から盛り上がった形状の半田からなる導体バンプを有する。   2. Description of the Related Art Conventionally, a wiring board on which a semiconductor integrated circuit element (hereinafter referred to as “IC chip”) is mounted has a conductor bump made of solder having a shape rising from the surface of the board as an external connection terminal for connecting an IC chip.

特開2005−26491JP 2005-26491 A

上記のような導体バンプは、バンプ径に対応した開口を有する塗布用マスクを用いて半田ペーストを印刷形成し、リフローすることによって得ることができる。しかしながら、このように導体バンプをペースト印刷により得る手法では、導体バンプの間隔や径などを微細化しようにも限度があり、近年、配線基板に求められている高密度配線化に対応することが困難である。   The conductor bump as described above can be obtained by printing and reflowing a solder paste using a coating mask having an opening corresponding to the bump diameter. However, in the method of obtaining the conductor bumps by paste printing in this way, there is a limit to miniaturizing the interval and the diameter of the conductor bumps, and in recent years, it can cope with the high density wiring required for the wiring board. Have difficulty.

本発明は、上記問題を鑑みて為されたものであり、導体バンプの間隔や径などの微細化が可能な配線基板の製造方法を提供することを目的とする。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a method of manufacturing a wiring board capable of miniaturizing the interval and diameter of conductor bumps.

課題を解決するための手段及び発明の効果Means for Solving the Problems and Effects of the Invention

上記課題を解決するため、本発明の配線基板の製造方法は、基板表面に外部接続端子としての導体バンプを有する配線基板の製造方法であって、基板表面をなし、無機フィラーを含有し、層間絶縁層と同じ樹脂材料を主体として構成されてなる表層絶縁層に開口を穿設して、当該開口の底面に導体パッドを露出させる開口穿設工程と、開口内を含む基板表面に無電解Cuメッキを施すことにより無電解Cuメッキ層を形成する無電解Cuメッキ層形成工程と、開口内およびその周縁を露出させるようパターンニングされたメッキレジストをマスクとして、その露出部分に無電解Cuメッキ層を下地として電解Cuメッキを施すことにより電解Cuメッキ層を形成し、該無電解Cuメッキ層と電解Cuメッキ層とからなるCuバンプを形成するバンプ形成工程と、を備えることを特徴とする。 To solve the above problems, a method of manufacturing the wiring board of the present invention is a manufacturing method of a wiring substrate having a conductive bump as an external connection terminal on the substrate surface, to name a substrate surface, containing an inorganic filler, An opening is formed in the surface insulating layer composed mainly of the same resin material as that of the interlayer insulating layer, and the conductive pad is exposed on the bottom surface of the opening, and the substrate surface including the inside of the opening is electrolessly formed. and electroless Cu plating layer forming step of forming an electroless Cu plating layer by performing Cu plating, patterned by plating resist so as to expose the opening and its periphery as a mask, electroless Cu plating on the exposed portion the layers forming the electroless Cu plating layer by performing electrolytic Cu plating as a base to form a Cu bump consisting of the electroless Cu plating layer and the electrolytic Cu plated layer Characterized in that it comprises a lamp forming step.

これによれば、フォトリソグラフィーを代表とする周知のリソグラフィー技術を用いて微細にパターンニングされたメッキレジストによって、配線基板の内部配線を得るが如く、メッキの微細なパターンとして導体バンプを得ることが可能となるため、ペースト印刷の場合と比較して、微細な間隔や径の導体バンプを形成することができる。また、かかる製造方法によって得られる本発明の配線基板は、以下の特徴を有する。   According to this, it is possible to obtain a conductor bump as a fine pattern of plating, as in the case of obtaining an internal wiring of a wiring board by a plating resist finely patterned by using a well-known lithography technique typified by photolithography. Therefore, it is possible to form conductor bumps with finer intervals and diameters than in the case of paste printing. Moreover, the wiring board of the present invention obtained by such a manufacturing method has the following characteristics.

すなわち、本発明の配線基板は、基板表面に外部接続端子としての導体バンプを有する配線基板であって、基板表面をなす表層絶縁層に開口が設けられ、当該開口の底面をなす導体パッドに接続された導体バンプが、メッキによって開口の内壁および周縁に密着して形成され、導体パッドとそれに接続された導体バンプとがCuメッキにより形成され、導体バンプは、下地である無電解Cuメッキ層と電解Cuメッキ層とからなるCuバンプで形成され、表層絶縁層は、無機フィラーを含有し、層間絶縁層と同じ樹脂材料を主体として構成されてなることを特徴とする。この場合、表層絶縁層における、導体バンプが密着する開口の内壁および周縁には、例えば、粗化処理が施されていると好適である。また、導体バンプにおける、基板表面上に表れた部分の高さは、例えば、開口の径に対して1/10以上1/2以下に設定されていることが好ましい。 That is, the wiring board of the present invention is a wiring board having conductor bumps as external connection terminals on the substrate surface, and an opening is provided in the surface insulating layer forming the substrate surface and connected to the conductor pad forming the bottom surface of the opening. The conductive bumps are formed in close contact with the inner wall and peripheral edge of the opening by plating, and the conductive pads and the conductive bumps connected thereto are formed by Cu plating. The conductive bumps are formed of an electroless Cu plating layer as a base. It is formed of Cu bumps made of an electrolytic Cu plating layer, and the surface insulating layer contains an inorganic filler and is mainly composed of the same resin material as the interlayer insulating layer . In this case, it is preferable that, for example, a roughening process is performed on the inner wall and the periphery of the opening in the surface insulating layer where the conductor bumps are in close contact. Moreover, it is preferable that the height of the part which appeared on the board | substrate surface in a conductor bump is set to 1/10 or more and 1/2 or less with respect to the diameter of opening, for example.

これによれば、導体バンプがメッキにより形成されていることから、導体パッドのみならず、鉤型に形成されて開口の内壁および周縁にも密着しており、導体バンプの密着面積が大きく、密着性が向上したものとなっている。すなわち、表層絶縁層には粗化処理が施されていることから、開口の内壁および周縁へのメッキの密着性が強固なものとなる。そのため、配線基板を構成する樹脂材料とそれに搭載されるICチップとの熱膨張差によって、その間の導体バンプに剪断応力が加わっても、導体バンプの密着性が向上していることにより、その剪断応力を吸収し、接合部分におけるクラックの発生が防止されるため、良好な接続信頼性が得られる。これに対し、従来のペースト印刷では、ペーストを開口内に印刷により流し込むことにより導体バンプを形成しているため、導体バンプは、開口の内壁に密着するというよりは接触しているに過ぎず、本発明における導体バンプよりも密着性が劣るものとなっている。   According to this, since the conductor bump is formed by plating, it is formed not only in the conductor pad but also in a bowl shape and is in close contact with the inner wall and the peripheral edge of the opening, and the contact area of the conductor bump is large, and the contact It has become improved. That is, since the surface insulating layer is roughened, the adhesion of the plating to the inner wall and peripheral edge of the opening becomes strong. Therefore, even if shear stress is applied to the conductor bump between the resin material constituting the wiring board and the IC chip mounted on the resin material, the adhesion of the conductor bump is improved. Since the stress is absorbed and the occurrence of cracks at the joint is prevented, good connection reliability can be obtained. On the other hand, in conventional paste printing, since the conductor bump is formed by pouring the paste into the opening by printing, the conductor bump is only in contact rather than in close contact with the inner wall of the opening, Adhesiveness is inferior to the conductor bump in this invention.

次に、本発明の配線基板では、導体パッドとそれに接続された導体バンプとをCuメッキにより形成することができる。これによれば、導体パッドと導体バンプとが同じCuメッキにより形成されるため、両者の密着性が向上し、良好な接続信頼性が得られる。これに対し、従来の半田ペーストを用いた導体バンプは、通常、Cuメッキからなる導体パッド上にNi−Auメッキを介して設置されるが、この場合、無電解Niメッキ浴に含まれるリン酸化合物によって、半田からなる導体バンプとの界面にリン濃化層が形成されてしまい、この層でクラックが発生し易いことから、本発明における導体バンプよりも接続信頼性が劣る。   Next, in the wiring board of the present invention, the conductor pads and the conductor bumps connected thereto can be formed by Cu plating. According to this, since the conductor pads and the conductor bumps are formed by the same Cu plating, the adhesion between them is improved, and good connection reliability is obtained. On the other hand, a conductor bump using a conventional solder paste is usually installed on a conductor pad made of Cu plating via Ni-Au plating. In this case, phosphoric acid contained in an electroless Ni plating bath is used. The compound forms a phosphorus-enriched layer at the interface with the conductor bump made of solder, and cracks are likely to occur in this layer, so the connection reliability is inferior to the conductor bump in the present invention.

次に、本発明の配線基板では、導体バンプの頂面を凹面とすることができる。すなわち、本発明の配線基板では、基板表面に外部接続端子としての導体バンプを有する配線基板であって、基板表面をなす表層絶縁層に開口が設けられ、当該開口の底面をなす導体パッドに接続された導体バンプは、その頂面が凹面とされてなることを特徴とする。これによれば、配線基板に搭載されるICチップがフリップチップ接続される場合、導体バンプの凹面状の頂面に、それよりも径小のICチップの端子が嵌ることから(図2参照)、ICチップが位置ズレを起こし難いという利点がある。また、導体バンプは、開口の内壁および周縁に密着する形状(鉤型)となっており、基板表面上に表れた部分が開口径よりも径大であることから、頂面を凹面状に形成しやすい。また、開口径に捕われることなく、基板表面上に表れた部分(ひいては導体バンプの頂面)をICチップの端子よりも径大に形成することができる。   Next, in the wiring board of the present invention, the top surface of the conductor bump can be a concave surface. That is, the wiring board of the present invention is a wiring board having conductor bumps as external connection terminals on the surface of the board, and an opening is provided in the surface insulating layer forming the surface of the board and connected to the conductor pad forming the bottom surface of the opening. The formed conductor bump is characterized in that its top surface is a concave surface. According to this, when the IC chip mounted on the wiring board is flip-chip connected, the terminal of the IC chip having a smaller diameter is fitted on the concave top surface of the conductor bump (see FIG. 2). There is an advantage that the IC chip is not easily displaced. In addition, the conductor bump has a shape that fits closely to the inner wall and the periphery of the opening (saddle shape), and the top surface is formed in a concave shape because the portion that appears on the substrate surface is larger than the opening diameter. It's easy to do. Further, the portion appearing on the substrate surface (and the top surface of the conductor bump) can be formed larger in diameter than the terminal of the IC chip without being caught by the opening diameter.

次に、本発明の配線基板では、表層絶縁層を、層間絶縁層と同じ樹脂材料で構成することができる。従来の半田ペーストを印刷する手法では、印刷後にリフローを行う必要があるため、基板表面をなす表層絶縁層は半田の溶融温度にも耐えうる特性(半田耐熱性)を有している必要がある。しかしながら、本発明のようにメッキにより導体バンプを形成する手法によれば、表層絶縁層に半田耐熱性が必要とされないため、層間絶縁層と同じ樹脂材料を用いることができる。   Next, in the wiring board of the present invention, the surface insulating layer can be made of the same resin material as the interlayer insulating layer. In the conventional method of printing a solder paste, since reflow needs to be performed after printing, the surface insulating layer forming the substrate surface needs to have characteristics (solder heat resistance) that can withstand the melting temperature of the solder. . However, according to the method of forming the conductor bumps by plating as in the present invention, the surface insulating layer does not require solder heat resistance, and therefore, the same resin material as that of the interlayer insulating layer can be used.

<配線基板>
本発明の配線基板の実施形態を、図面を参照しながら説明する。図1は、本発明の第1実施形態に係る配線基板1の断面構造を概略的に表す図である。なお、配線基板1は、図中で上側に表れている面を第1表面MP1とし、下側に表れている面を第2表面MP2とする。配線基板1は、ICチップと主基板(マザーボード等)との間に配置されるものであり、第1表面MP1側に形成されたCuバンプ7には、図2に示すように、ICチップがフリップチップ接続される。他方、第2表面MP2側に形成された導体パッド57は、図示しないリードピンや半田ボール等が設置され、これを介して主基板が接続される。
<Wiring board>
An embodiment of a wiring board of the present invention will be described with reference to the drawings. FIG. 1 is a diagram schematically showing a cross-sectional structure of a wiring board 1 according to the first embodiment of the present invention. In the wiring board 1, a surface appearing on the upper side in the drawing is a first surface MP1, and a surface appearing on the lower side is a second surface MP2. The wiring board 1 is disposed between the IC chip and the main board (motherboard or the like). The Cu bump 7 formed on the first surface MP1 side has an IC chip as shown in FIG. Flip chip connected. On the other hand, the conductor pads 57 formed on the second surface MP2 side are provided with lead pins, solder balls, etc. (not shown), and the main board is connected thereto.

基板コア部CBは、繊維強化樹脂板(例えばガラス繊維強化エポキシ樹脂)等の樹脂板2で主に構成されており、樹脂板2には板厚方向に貫通する貫通孔21Aが形成され、その内壁には配線積層部L1,L2間の導通を図る貫通導体21がCuメッキにより形成されている。また、貫通導体21の内側には、無機フィラー(例えばシリカフィラー)を含むエポキシ系の樹脂からなる樹脂製穴埋め材23が充填されており、貫通導体21の端部にはCuメッキからなる蓋導体52が形成されている。   The substrate core portion CB is mainly composed of a resin plate 2 such as a fiber reinforced resin plate (for example, a glass fiber reinforced epoxy resin), and the resin plate 2 is formed with a through hole 21A penetrating in the plate thickness direction. A through conductor 21 is formed on the inner wall by Cu plating for conducting electrical connection between the wiring laminated portions L1 and L2. The inside of the through conductor 21 is filled with a resin filler 23 made of an epoxy resin containing an inorganic filler (for example, silica filler), and the end of the through conductor 21 is a lid conductor made of Cu plating. 52 is formed.

基板コア部CBの両面上に設けられた配線積層部L1,L2は、樹脂絶縁層(B11〜B13,SR1,B21〜B23,SR2)と導体層(M11〜M14,M21〜M24)とが交互に積層された構造を有する。導体層M11〜M14,M21〜M24は、Cuメッキからなる配線53や導体パッド55,56,57やベタ導体51,54等を含むものであり、その層間はビア導体5によって層間接続がなされている。ここで、導体層M11〜M13,M21〜M23における導体パッド55は、ビア導体5の受け皿となる導体部分である。導体層M14における導体パッド56は、Cuバンプ7の受け皿となる導体部分である。導体層M24における導体パッド57は、リードピンや半田ボール(図示せず)を形成するためのものであり、その表面にはNi−Auメッキが施されている。   In the wiring laminated portions L1 and L2 provided on both surfaces of the substrate core portion CB, resin insulating layers (B11 to B13, SR1, B21 to B23, SR2) and conductor layers (M11 to M14, M21 to M24) are alternately arranged. Have a laminated structure. The conductor layers M11 to M14 and M21 to M24 include wiring 53 made of Cu plating, conductor pads 55, 56, 57, solid conductors 51, 54, and the like, and interlayer connection is made between the layers by via conductors 5. Yes. Here, the conductor pads 55 in the conductor layers M <b> 11 to M <b> 13 and M <b> 21 to M <b> 23 are conductor portions that serve as receptacles for the via conductor 5. The conductor pad 56 in the conductor layer M <b> 14 is a conductor portion that serves as a tray for the Cu bump 7. The conductor pads 57 in the conductor layer M24 are for forming lead pins and solder balls (not shown), and the surface thereof is Ni-Au plated.

樹脂絶縁層(層間絶縁層)B11〜B13,B21〜B23は、シリカ粉末等の無機フィラーを適宜含んだエポキシ樹脂等の熱硬化性の樹脂材料3からなり、導体層M11〜M14,M21〜M24間を絶縁するとともに、層間接続のためのビア導体5が貫通形成されている。また、導体層M14,M24上には、シリカ粉末等の無機フィラーを適宜含み、更にリン化合物等の難燃剤などを含んだエポキシ樹脂等の感光性の樹脂材料4からなるソルダーレジスト層(表層絶縁層)SR1,SR2が形成され、導体パッド56,57を露出させるための開口6A,8Aが穿設されている。   The resin insulating layers (interlayer insulating layers) B11 to B13, B21 to B23 are made of a thermosetting resin material 3 such as an epoxy resin appropriately including an inorganic filler such as silica powder, and the conductor layers M11 to M14 and M21 to M24. A via conductor 5 is formed through the insulating layer for interlayer connection. Further, on the conductor layers M14 and M24, a solder resist layer (surface layer insulation) made of a photosensitive resin material 4 such as an epoxy resin containing an inorganic filler such as silica powder as appropriate and further containing a flame retardant such as a phosphorus compound. Layers) SR1 and SR2 are formed, and openings 6A and 8A for exposing the conductor pads 56 and 57 are formed.

Cuバンプ7は、Cuメッキからなり、導体パッド56に接続されてなるとともに、ソルダーレジスト層SR1の開口6Aの内壁61および周縁62に密着する鉤型の形状とされている。すなわち、Cuバンプ7は、層間接続のためのビア導体5と同様の形状を為しており、導体パッド56に接続された開口6A内に存在する部分75と、当該部分75よりも径大の第1表面MP1上に表れた部分73とを有する。また、Cuバンプ7は、その間隔(中心間隔)が例えば150μm以下とされている。   The Cu bump 7 is made of Cu plating, is connected to the conductor pad 56, and has a bowl shape that is in close contact with the inner wall 61 and the peripheral edge 62 of the opening 6A of the solder resist layer SR1. That is, the Cu bump 7 has the same shape as the via conductor 5 for interlayer connection, and has a portion 75 present in the opening 6A connected to the conductor pad 56 and a diameter larger than that of the portion 75. And a portion 73 appearing on the first surface MP1. Further, the Cu bump 7 has an interval (center interval) of, for example, 150 μm or less.

また、Cuバンプ7は、図2に示すように、ICチップをフリップチップ接続しやすいよう、第1表面MP1上に表れた部分73(Cuバンプ7の頂面71)がICチップの端子Tよりも径大に形成されている。さらに、この頂面71は凹曲面とされ、ICチップがフリップチップ接続されると、凹面状の頂面71に端子Tが嵌って位置ズレが防止される。なお、Cuバンプ7の頂面71は、図1および2に示したような凹曲面に限らず、図3の(C)に示した平坦面や(D)に示した凸曲面とすることもでき、これにより端子Tとの接触面積を向上させることができる。   Further, as shown in FIG. 2, the Cu bump 7 has a portion 73 (the top surface 71 of the Cu bump 7) appearing on the first surface MP1 from the terminal T of the IC chip so that the IC chip can be easily flip-chip connected. Is also formed in a large diameter. Further, the top surface 71 is a concave curved surface, and when the IC chip is flip-chip connected, the terminal T fits into the concave top surface 71 to prevent displacement. The top surface 71 of the Cu bump 7 is not limited to the concave curved surface as shown in FIGS. 1 and 2, but may be a flat surface shown in FIG. 3C or a convex curved surface shown in FIG. Thus, the contact area with the terminal T can be improved.

また、Cuバンプ7は、第1表面MP1上に表れた部分73の高さが開口6Aの径に対して1/10以上1/2以下程度とすることができる。例えば、開口6Aの径を80〜100μm、第1表面MP1上に表れた部分73の高さを10〜50μmとすることができる。この範囲とすることで、上述の如く、良好にICチップをフリップチップ接続することができる。   Further, in the Cu bump 7, the height of the portion 73 appearing on the first surface MP1 can be set to about 1/10 or more and 1/2 or less with respect to the diameter of the opening 6A. For example, the diameter of the opening 6A can be set to 80 to 100 μm, and the height of the portion 73 appearing on the first surface MP1 can be set to 10 to 50 μm. By setting this range, the IC chip can be flip-chip connected satisfactorily as described above.

また、Cuバンプ7は、第1表面MP1上に表れた部分73の開口6A端からの張り出し長さを、近接する開口間隔の1/3以下、より好ましくは1/4以下とすることができる。また、隣接するCuバンプ7の間隔は、隣接する開口6Aの間隔の半分以上とすることができる。これらを越えると、隣接するCuバンプ7同士が短絡を起こす惧れがある。   Further, the Cu bump 7 can have a protruding length from the end of the opening 6A of the portion 73 appearing on the first surface MP1 to be 1/3 or less, more preferably 1/4 or less of the adjacent opening interval. . Further, the interval between the adjacent Cu bumps 7 can be set to half or more of the interval between the adjacent openings 6A. Exceeding these may cause a short circuit between adjacent Cu bumps 7.

<配線基板の製造方法>
本発明の配線基板の製造方法の実施形態を、図面を参照しながら説明する。
配線基板1は、基板コア部CBの両面上に、樹脂絶縁層(B11〜B13,SR1,B21〜B23,SR2)と、導体層(M11〜M14,M21〜M24)とを交互に積層して配線積層部L1,L2を形成することによって得られる。これは、公知のビルドアップ工程(セミアディティブ法,フィルム状樹脂材料のラミネート形成技術,フォトリソグラフィー技術などを組み合わせた工程)を用いることで実現できる。また、基板コア部CBは、ガラス繊維28により強化されたエポキシ樹脂からなる樹脂板2に、ドリル加工により板厚方向に貫通する貫通孔21Aを形成し、その内壁を覆う貫通導体21をCuメッキにより形成し、その内側に穴埋め材23を充填することで得られる。
<Manufacturing method of wiring board>
An embodiment of a method for manufacturing a wiring board according to the present invention will be described with reference to the drawings.
The wiring board 1 is formed by alternately laminating resin insulating layers (B11 to B13, SR1, B21 to B23, SR2) and conductor layers (M11 to M14, M21 to M24) on both surfaces of the substrate core portion CB. It is obtained by forming the wiring laminated portions L1 and L2. This can be realized by using a known build-up process (a process in which a semi-additive method, a film-form resin material laminate formation technique, a photolithography technique, or the like is combined). Further, the substrate core portion CB is formed with a through hole 21A penetrating in the thickness direction by drilling in the resin plate 2 made of epoxy resin reinforced by the glass fiber 28, and the through conductor 21 covering the inner wall is plated with Cu. It is obtained by filling the hole filling material 23 inside.

図7および図8は、配線基板1のうち配線積層部L1,L2を製造する際の最終段階、すなわちソルダーレジスト層SR1を形成してCuバンプ7を形成する工程の工程図である。工程1の前において、層間絶縁層B13上には導体パッド56が形成されている。   7 and 8 are process diagrams of the final stage when manufacturing the wiring laminated portions L1 and L2 of the wiring substrate 1, that is, the process of forming the Cu bumps 7 by forming the solder resist layer SR1. Prior to step 1, a conductor pad 56 is formed on the interlayer insulating layer B13.

まず、工程1(Cu粗化工程)では、導体パッド56に対し、後に形成する樹脂材料4との密着性を向上させるため、Cu粗化処理(公知のマイクロエッチング法や黒化処理等)を施す。工程2(表層絶縁層形成工程)では、導体パッド56を覆うようにソルダーレジスト層SR1(樹脂材料4からなる層)をラミネート形成する。この際、導体パッド56の表面は、Cu粗化処理が施されているので、ソルダーレジスト層SR1との密着性が良好である。なお、後述するように、CuメッキによってCuバンプ7が形成されることから、第1表面MP1をなす表層絶縁層には、従来の半田リフローを必要とするペースト印刷の手法の場合に必要とされていた半田耐熱性が要求されない。しかし、第2表面MP2側の表層絶縁層には、開口8Aに露出する導体パッド57にリードピン(半田で固着)や半田ボールを設置するため、半田耐熱性が要求される。このため、第2表面MP2をなす表層絶縁層を、半田耐熱性を有する樹脂材料4からなるソルダーレジスト層SR2とし、これと併せて、第1表面MP1をなす表層絶縁層も同じ樹脂材料4からなるソルダーレジスト層SR1として構成すれば、両者SR1,SR2を一括して形成することができるので、工程が簡易となる。   First, in Step 1 (Cu roughening step), Cu roughening treatment (a known microetching method, blackening treatment, etc.) is performed on the conductor pad 56 in order to improve adhesion to the resin material 4 to be formed later. Apply. In step 2 (surface insulating layer forming step), a solder resist layer SR1 (a layer made of the resin material 4) is laminated so as to cover the conductor pads 56. At this time, since the surface of the conductor pad 56 has been subjected to Cu roughening treatment, the adhesiveness with the solder resist layer SR1 is good. As will be described later, since the Cu bumps 7 are formed by Cu plating, the surface insulating layer forming the first surface MP1 is required in the case of a conventional paste printing method that requires solder reflow. The required solder heat resistance is not required. However, the surface insulating layer on the second surface MP2 side is required to have solder heat resistance because lead pins (fixed with solder) and solder balls are placed on the conductor pads 57 exposed in the openings 8A. For this reason, the surface insulating layer forming the second surface MP2 is a solder resist layer SR2 made of the resin material 4 having solder heat resistance, and the surface insulating layer forming the first surface MP1 is also made of the same resin material 4 together with this. If the solder resist layer SR1 is formed, both SR1 and SR2 can be formed at a time, so that the process becomes simple.

次に、工程3(開口穿設工程)では、いわゆるフォトビアプロセスによる加工によって、ソルダーレジスト層SR1に開口6Aを穿設する。これにより、開口6Aの底面には導体パッド56が露出する。工程4(樹脂粗化工程)では、後にメッキにより形成されるCuバンプ7との密着性を向上させるために、過マンガン酸カリウム等を用いて、開口6Aの内壁61や周縁62を含むソルダーレジスト層SR1の表面に粗化処理を施す。   Next, in step 3 (opening drilling step), the opening 6A is drilled in the solder resist layer SR1 by processing by a so-called photo via process. As a result, the conductor pad 56 is exposed on the bottom surface of the opening 6A. In step 4 (resin roughening step), a solder resist including the inner wall 61 and the peripheral edge 62 of the opening 6A is used by using potassium permanganate or the like in order to improve the adhesion to the Cu bump 7 formed later by plating. A roughening process is performed on the surface of the layer SR1.

次に、工程5(バンプ形成工程)では、開口6A内(導体バンプ56,内壁61)およびその周縁62を露出させるようパターンニングされたメッキレジストMSをマスクとして、その露出部分にCuメッキを施してCuバンプ7を形成する。具体的には、5−1(無電解メッキ),5−2(マスク形成),5−3(電解メッキ)等の手順によってCuバンプ7を形成する。まず5−1(無電解メッキ)では、開口6A内(導体バンプ56,内壁61)も含むソルダーレジスト層SR1の表面全体に対し、Pd触媒の付与後、硫酸銅系の無電解Cuメッキ液を用いて無電解Cuメッキを施すことにより、無電解Cuメッキ層77を形成する。5−2(マスク形成)では、開口6Aおよびその周縁62を除く位置にメッキレジストMSを形成する。これは、感光性レジストを露光・現像し、開口6Aおよびその周縁62上に当たる部分を除去することによって、これらを露出させるようなパターンを得ることができる。   Next, in step 5 (bump formation step), the exposed portion is subjected to Cu plating using the plating resist MS patterned to expose the inside of the opening 6A (conductor bump 56, inner wall 61) and its peripheral edge 62 as a mask. Cu bumps 7 are formed. Specifically, the Cu bumps 7 are formed by procedures such as 5-1 (electroless plating), 5-2 (mask formation), and 5-3 (electrolytic plating). First, in 5-1 (electroless plating), a copper sulfate-based electroless Cu plating solution is applied to the entire surface of the solder resist layer SR1 including the inside of the opening 6A (conductor bump 56, inner wall 61) after applying a Pd catalyst. The electroless Cu plating layer 77 is formed by applying electroless Cu plating. In 5-2 (mask formation), a plating resist MS is formed at a position excluding the opening 6A and the peripheral edge 62 thereof. This can be obtained by exposing and developing the photosensitive resist and removing the portions of the openings 6A and the peripheral edge 62 that are exposed, thereby exposing the patterns.

続いて、5−3(電解メッキ)では、無電解Cuメッキ層77を下地として電解Cuメッキを施して電解Cuメッキ層78を形成し、無電解Cuメッキ層77と電解Cuメッキ層78からなるCuバンプ7を露出部分(開口6Aおよびその周縁62)に形成する。ここで、Cuバンプ7の頂面71は、電解Cuメッキ層78の形成時においてその形状を制御することができる。例えば、図3(A)に示すように、メッキレジストMSの厚さや電解Cuメッキ層78の形成厚さ等の関係によって、Cuバンプ7の頂面71は、凹面状(図3(B)),平坦状(図3(C)),凸面状(図3(D))と変化する。例えば、電解Cuメッキ層78の形成厚さがメッキレジストMSの厚さよりも不足する場合には、Cuバンプ7の頂面71は開口6Aの形状に倣って凹面状となり易く、他方、電解Cuメッキ層78の形成厚さが増加すると、かかる凹面状の部分が埋まり、平坦状や凸面状となり易い。   Subsequently, in 5-3 (electrolytic plating), electrolytic Cu plating is performed using the electroless Cu plating layer 77 as a base to form an electrolytic Cu plating layer 78, and the electroless Cu plating layer 77 and the electrolytic Cu plating layer 78 are formed. A Cu bump 7 is formed on the exposed portion (opening 6A and its peripheral edge 62). Here, the shape of the top surface 71 of the Cu bump 7 can be controlled when the electrolytic Cu plating layer 78 is formed. For example, as shown in FIG. 3A, the top surface 71 of the Cu bump 7 has a concave shape (FIG. 3B) depending on the thickness of the plating resist MS, the formation thickness of the electrolytic Cu plating layer 78, and the like. , Flat shape (FIG. 3C), convex shape (FIG. 3D). For example, when the formation thickness of the electrolytic Cu plating layer 78 is less than the thickness of the plating resist MS, the top surface 71 of the Cu bump 7 tends to be concave following the shape of the opening 6A, while the electrolytic Cu plating is performed. When the formation thickness of the layer 78 is increased, such a concave portion is filled, and the layer 78 is likely to be flat or convex.

電解Cuメッキ層78の形成後は、メッキレジストMSを除去し、クイックエッチングによりメッキレジストMSの下部に存在していた無電解Cuメッキ層77を除去することでCuバンプ7が得られる。その後、電気的検査,外観検査等の所定の検査を経て、配線基板1が完成する。   After the formation of the electrolytic Cu plating layer 78, the plating resist MS is removed, and the Cu bump 7 is obtained by removing the electroless Cu plating layer 77 existing under the plating resist MS by quick etching. Thereafter, the wiring board 1 is completed through predetermined inspections such as electrical inspection and appearance inspection.

<他の実施形態>
以下、本発明の他の実施形態を、図面を参照しながら説明する。なお、上述の第1実施形態と重複する箇所については、同番号を付して説明を省略する。
<Other embodiments>
Hereinafter, other embodiments of the present invention will be described with reference to the drawings. In addition, about the location which overlaps with the above-mentioned 1st Embodiment, the same number is attached | subjected and description is abbreviate | omitted.

図4は、第2実施形態の配線基板1Bの断面構造を概略的に表す図である。配線基板1Bは、第1表面MP1をなす表層絶縁層に、層間絶縁層B11〜B13,B21〜23と同じ樹脂材料3を用いた絶縁層B14を用いている。これは、CuメッキによってCuバンプ7が形成されることから、第1表面MP1をなす表層絶縁層には、従来の半田リフローを必要とするペースト印刷の手法の場合に必要とされていた半田耐熱性が要求されないことによる。なお、本実施形態では、第2表面MP2をなす表層絶縁層も、樹脂材料3を用いた絶縁層B24とされている。この場合、絶縁層B14,B24を一括して形成することができるので、工程が簡易である。   FIG. 4 is a diagram schematically showing a cross-sectional structure of the wiring board 1B of the second embodiment. In the wiring board 1B, an insulating layer B14 using the same resin material 3 as the interlayer insulating layers B11 to B13 and B21 to 23 is used for the surface insulating layer forming the first surface MP1. This is because the Cu bumps 7 are formed by Cu plating, so that the surface heat insulating layer forming the first surface MP1 has a solder heat resistance that has been required in the case of a conventional paste printing method that requires solder reflow. This is because sex is not required. In the present embodiment, the surface insulating layer forming the second surface MP2 is also the insulating layer B24 using the resin material 3. In this case, since the insulating layers B14 and B24 can be formed at once, the process is simple.

図5は、第3実施形態の配線基板1Cの断面構造を概略的に表す図である。配線基板1Cは、第1表面MP1をなす表層絶縁層に、層間絶縁層B11〜B13,B21〜23と同じ樹脂材料3を用いた絶縁層B14を用いる一方で、第2表面MP2をなす表層絶縁層に、半田耐熱性を有する樹脂材料4からなるソルダーレジスト層SR2を用いている。これは、絶縁層B14とソルダーレジスト層SR2を順に形成することで得られる。これによれば、第1表面MP1をなす表層絶縁層を、層間絶縁層B11〜B13,B21〜23と同じ樹脂材料3を用いることができる一方で、第2表面MP2をなす表層絶縁層に半田耐熱性を有する樹脂材料4を用いるため、リードピン(半田で固着)や半田ボールを良好に設置できる。   FIG. 5 is a diagram schematically illustrating a cross-sectional structure of the wiring board 1 </ b> C of the third embodiment. The wiring substrate 1C uses the insulating layer B14 using the same resin material 3 as the interlayer insulating layers B11 to B13 and B21 to 23 as the surface insulating layer that forms the first surface MP1, while the surface insulating layer that forms the second surface MP2. The solder resist layer SR2 made of the resin material 4 having solder heat resistance is used for the layer. This is obtained by sequentially forming the insulating layer B14 and the solder resist layer SR2. According to this, the surface layer insulating layer forming the first surface MP1 can be made of the same resin material 3 as the interlayer insulating layers B11 to B13 and B21 to 23, while being soldered to the surface layer insulating layer forming the second surface MP2. Since the resin material 4 having heat resistance is used, lead pins (fixed with solder) and solder balls can be satisfactorily installed.

図6は、上記Cuバンプ7に代えて半田メッキバンプ7Hを形成した第4実施形態の配線基板1Dの要部拡大図である。半田メッキバンプ7Hを形成する場合も同様に、半田ペーストの印刷による場合と比較して、バンプの微小化が実現する。これに限らず、他の金属メッキも同様に導体バンプとして適用できる。また、半田メッキバンプ7Hと導体パッド56との間には、Niメッキ層79が介挿されており、両者の密着性を向上させている。   FIG. 6 is an enlarged view of a main part of a wiring board 1D of the fourth embodiment in which solder plating bumps 7H are formed instead of the Cu bumps 7. Similarly, when the solder plating bump 7H is formed, the size of the bump can be reduced as compared with the case where the solder paste is printed. Not only this but other metal plating can be similarly applied as a conductor bump. Further, a Ni plating layer 79 is interposed between the solder plating bump 7H and the conductor pad 56, thereby improving the adhesion between them.

以上、本発明の実施形態について説明したが、本発明はこれらの形式に限定されるものではなく、これらに具現された発明と同一性の範囲内において適宜変更して実施し得る。   As mentioned above, although embodiment of this invention was described, this invention is not limited to these forms, In the range of the same identity as the invention embodied in these, it can change suitably and can implement.

本発明の配線基板(第1実施形態)の断面構造を概略的に表す図The figure which represents roughly the cross-section of the wiring board (1st Embodiment) of this invention 導体バンプにICチップがフリップ接続された状態を表す図The figure showing the state where the IC chip is flip-connected to the conductor bump 導体バンプの形状についての説明図Illustration of conductor bump shape 本発明の配線基板(第2実施形態)の断面構造を概略的に表す図The figure which represents roughly the cross-section of the wiring board (2nd Embodiment) of this invention 本発明の配線基板(第3実施形態)の断面構造を概略的に表す図The figure which represents roughly the cross-section of the wiring board (3rd Embodiment) of this invention 導体バンプの第1変形例First modification of conductor bump 本発明の配線基板の製造方法を表す工程図Process drawing showing the manufacturing method of the wiring board of this invention 図8に続く図Figure following Figure 8

符号の説明Explanation of symbols

1 配線基板
56 導体パッド
6A 開口
61 開口の内壁
62 開口の周縁
7 導体バンプ
71 導体バンプの頂面
SR 表層絶縁層
B 層間絶縁層
MP 基板表面
MS メッキレジスト
DESCRIPTION OF SYMBOLS 1 Wiring board 56 Conductor pad 6A Opening 61 Opening inner wall 62 Opening periphery 7 Conductive bump 71 Conductive bump top surface SR Surface insulating layer B Interlayer insulating layer MP Substrate surface MS Plating resist

Claims (7)

基板表面に外部接続端子としての導体バンプを有する配線基板であって、基板表面をなす表層絶縁層に開口が設けられ、当該開口の底面をなす導体パッドに接続された前記導体バンプが、メッキによって前記開口の内壁および周縁に密着して形成され、前記導体パッドとそれに接続された前記導体バンプとがCuメッキにより形成され、前記導体バンプは、下地である無電解Cuメッキ層と電解Cuメッキ層とからなるCuバンプで形成され、前記表層絶縁層は、無機フィラーを含有し、層間絶縁層と同じ樹脂材料を主体として構成されてなることを特徴とする配線基板。 A wiring board having conductor bumps as external connection terminals on the substrate surface, wherein an opening is provided in a surface insulating layer forming the substrate surface, and the conductor bump connected to the conductor pad forming the bottom surface of the opening is formed by plating. The conductive pads and the conductive bumps connected to the conductive pads are formed by Cu plating in close contact with the inner wall and the peripheral edge of the opening, and the conductive bumps are an electroless Cu plating layer and an electrolytic Cu plating layer as a base. A wiring board , wherein the surface insulating layer contains an inorganic filler and is mainly composed of the same resin material as the interlayer insulating layer . 前記表層絶縁層における、前記導体バンプが密着する前記開口の内壁および周縁には、粗化処理が施されている請求項1に記載の配線基板。The wiring board according to claim 1, wherein a roughening process is performed on an inner wall and a peripheral edge of the opening in the surface insulating layer where the conductor bumps are in close contact. 前記導体バンプは、その頂面が凹面とされてなる請求項1または2に記載の配線基板。   The wiring board according to claim 1, wherein a top surface of the conductor bump is a concave surface. 前記表層絶縁層は、前記層間絶縁層と同じ樹脂材料で構成されてなる請求項1ないし3のいずれか1項に記載の配線基板。 The surface insulating layer, a wiring board according to any one of the interlayer insulating layer to become formed of the same resin material according to claim 1 to 3. 前記導体バンプは、前記導体パッドに接続された前記開口内に存在する部分と、前記基板表面上に表れた部分とを有し、該基板表面上に表れた部分が柱状に形成されてなる請求項1ないし4のいずれか1項に記載の配線基板。 The conductor bump, wherein the has a portion present in the connected the opening to the conductor pad, and appears portion on the substrate surface, the portion appearing on the substrate surface is formed in a columnar shape according Item 5. The wiring board according to any one of Items 1 to 4. 前記導体バンプにおける、前記基板表面上に表れた部分の高さは、前記開口の径に対して1/10以上1/2以下に設定されている請求項5に記載の配線基板。The wiring board according to claim 5, wherein a height of a portion of the conductor bump that appears on the surface of the board is set to 1/10 or more and 1/2 or less with respect to a diameter of the opening. 基板表面に外部接続端子としての導体バンプを有する配線基板の製造方法であって、
基板表面をなし、無機フィラーを含有し、層間絶縁層と同じ樹脂材料を主体として構成されてなる表層絶縁層に開口を穿設して、当該開口の底面に導体パッドを露出させる開口穿設工程と、前記開口内を含む前記基板表面に無電解Cuメッキを施すことにより無電解Cuメッキ層を形成する無電解Cuメッキ層形成工程と、前記開口内およびその周縁を露出させるようパターンニングされたメッキレジストをマスクとして、その露出部分に前記無電解Cuメッキ層を下地として電解Cuメッキを施すことにより電解Cuメッキ層を形成し、該無電解Cuメッキ層と電解Cuメッキ層とからなるCuバンプを形成するバンプ形成工程と、を備えることを特徴とする配線基板の製造方法。
A method of manufacturing a wiring board having conductor bumps as external connection terminals on a substrate surface,
It name the substrate surface, containing an inorganic filler, an opening bored which bored an opening in the surface insulating layer formed is composed of the same resin material as the interlayer insulating layer mainly, to expose the contact pads on the bottom of the opening And an electroless Cu plating layer forming step of forming an electroless Cu plating layer by performing electroless Cu plating on the substrate surface including the inside of the opening; and patterning to expose the inside of the opening and the periphery thereof. Using the plated resist as a mask, an electrolytic Cu plating layer is formed by applying electrolytic Cu plating to the exposed portion of the electroless Cu plating layer as a base, and a Cu made of the electroless Cu plating layer and the electrolytic Cu plating layer. And a bump forming step of forming a bump.
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