JP4759146B2 - 二重ビームを備えた二次電子放射顕微鏡のための装置および方法 - Google Patents

二重ビームを備えた二次電子放射顕微鏡のための装置および方法 Download PDF

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Publication number
JP4759146B2
JP4759146B2 JP2000620658A JP2000620658A JP4759146B2 JP 4759146 B2 JP4759146 B2 JP 4759146B2 JP 2000620658 A JP2000620658 A JP 2000620658A JP 2000620658 A JP2000620658 A JP 2000620658A JP 4759146 B2 JP4759146 B2 JP 4759146B2
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Prior art keywords
sample
electrons
electron
energy
range
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Expired - Fee Related
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JP2000620658A
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English (en)
Japanese (ja)
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JP2003500821A (ja
Inventor
ベネクラセン・リー
アドラー・デイビッド
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KLA Corp
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KLA Corp
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Priority claimed from US09/354,948 external-priority patent/US6087659A/en
Application filed by KLA Corp filed Critical KLA Corp
Priority claimed from PCT/US2000/014583 external-priority patent/WO2000072355A1/en
Priority claimed from US09/579,867 external-priority patent/US6586733B1/en
Publication of JP2003500821A publication Critical patent/JP2003500821A/ja
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Publication of JP4759146B2 publication Critical patent/JP4759146B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2538—Low energy electron microscopy [LEEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/262—Non-scanning techniques

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2000620658A 1999-05-25 2000-05-25 二重ビームを備えた二次電子放射顕微鏡のための装置および方法 Expired - Fee Related JP4759146B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13574299P 1999-05-25 1999-05-25
US60/135,742 1999-05-25
US09/354,948 1999-07-16
US09/354,948 US6087659A (en) 1997-11-05 1999-07-16 Apparatus and method for secondary electron emission microscope
PCT/US2000/014583 WO2000072355A1 (en) 1999-05-25 2000-05-25 Apparatus and methods for secondary electron emission microscopy with dual beam
US09/579,867 2000-05-25
US09/579,867 US6586733B1 (en) 1999-05-25 2000-05-25 Apparatus and methods for secondary electron emission microscope with dual beam

Publications (2)

Publication Number Publication Date
JP2003500821A JP2003500821A (ja) 2003-01-07
JP4759146B2 true JP4759146B2 (ja) 2011-08-31

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ID=41180684

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Application Number Title Priority Date Filing Date
JP2000620658A Expired - Fee Related JP4759146B2 (ja) 1999-05-25 2000-05-25 二重ビームを備えた二次電子放射顕微鏡のための装置および方法

Country Status (2)

Country Link
JP (1) JP4759146B2 (de)
DE (1) DE60043103D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI323783B (en) * 2003-01-27 2010-04-21 Ebara Corp Mapping projection type electron beam apparatus for sample inspection by electron emitted from the sample,sample evaluation method and semiconductor device manufacturing using same
TWI473140B (zh) * 2008-04-11 2015-02-11 Ebara Corp 試料觀察方法與裝置，及使用該方法與裝置之檢查方法與裝置
WO2011151116A1 (en) * 2010-06-03 2011-12-08 Carl Zeiss Sms Gmbh A method for determining the performance of a photolithographic mask
US10380728B2 (en) * 2015-08-31 2019-08-13 Kla-Tencor Corporation Model-based metrology using images

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05205688A (ja) * 1992-01-28 1993-08-13 Toshiba Corp 走査型電子顕微鏡
JPH06243814A (ja) * 1993-02-16 1994-09-02 Jeol Ltd 走査電子顕微鏡
JPH0714537A (ja) * 1993-06-22 1995-01-17 Hitachi Ltd 走査型電子顕微鏡による計測方法
JPH07153411A (ja) * 1993-11-29 1995-06-16 Nikon Corp 電子ビーム観察方法および装置
JPH10275583A (ja) * 1997-03-28 1998-10-13 Jeol Ltd 絶縁性物質を含む試料の分析装置
WO1999023684A1 (en) * 1997-11-05 1999-05-14 Kla-Tencor Corporation Apparatus and method for secondary electron emission microscope

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05205688A (ja) * 1992-01-28 1993-08-13 Toshiba Corp 走査型電子顕微鏡
JPH06243814A (ja) * 1993-02-16 1994-09-02 Jeol Ltd 走査電子顕微鏡
JPH0714537A (ja) * 1993-06-22 1995-01-17 Hitachi Ltd 走査型電子顕微鏡による計測方法
JPH07153411A (ja) * 1993-11-29 1995-06-16 Nikon Corp 電子ビーム観察方法および装置
JPH10275583A (ja) * 1997-03-28 1998-10-13 Jeol Ltd 絶縁性物質を含む試料の分析装置
WO1999023684A1 (en) * 1997-11-05 1999-05-14 Kla-Tencor Corporation Apparatus and method for secondary electron emission microscope

Also Published As

Publication number Publication date
DE60043103D1 (de) 2009-11-19
JP2003500821A (ja) 2003-01-07

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