JP4758648B2 - 不揮発性記憶システムにおける平均消去カウントの維持 - Google Patents
不揮発性記憶システムにおける平均消去カウントの維持 Download PDFInfo
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- JP4758648B2 JP4758648B2 JP2004548310A JP2004548310A JP4758648B2 JP 4758648 B2 JP4758648 B2 JP 4758648B2 JP 2004548310 A JP2004548310 A JP 2004548310A JP 2004548310 A JP2004548310 A JP 2004548310A JP 4758648 B2 JP4758648 B2 JP 4758648B2
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- 230000015654 memory Effects 0.000 claims abstract description 223
- 238000000034 method Methods 0.000 claims abstract description 79
- 230000004044 response Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 description 42
- 238000013507 mapping Methods 0.000 description 32
- 238000010586 diagram Methods 0.000 description 29
- 230000003068 static effect Effects 0.000 description 21
- 210000004027 cell Anatomy 0.000 description 12
- 238000007726 management method Methods 0.000 description 12
- 230000005055 memory storage Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 5
- 238000013500 data storage Methods 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000010267 cellular communication Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000012005 ligant binding assay Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7211—Wear leveling
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Tires In General (AREA)
Description
即ち、均一)に摩耗される可能性を増大させるために、摩耗一様化動作が、しばしば実施される。摩耗一様化動作は、当業者なら理解するように、一般に、特定のLBAに関連付けられた物理的位置またはブロックが、同じLBAが同じ物理的位置またはブロックに常に関連付けられるとは限らないように、変更されることが可能であるように構成される。LBAのブロック関連付けを変化させることによって、他のブロックが摩耗する前かなり前に、特定のブロックが摩耗することがある可能性が低くなる。
Claims (9)
- 不揮発性メモリ内における複数のブロックの各ブロックが消去された平均回数に従って、メモリシステムの不揮発性メモリを管理する方法であって、前記方法が、
前記複数のブロックの第1のブロックに対して、当該第1のブロック内に記憶された当該ブロックの消去回数を示す消去カウントと前記メモリシステムのシステムメモリに記憶された前記第1のブロックに対する消去カウント値とを比較するステップと、
前記第1のブロック内に記憶された消去カウントが前記システムメモリ内に記憶された前記第1のブロックに対する消去カウント値より大きいことを決定する前記比較ステップに応答して、前記システムメモリ内に記憶された前記第1のブロックに対する消去カウント値を前記第1のブロック内に記憶された消去カウントに対応するように更新するステップと、
前記第1のブロック内に記憶された消去カウントが前記消去カウント値より大きいことを決定する前記比較ステップに応答して、前記複数のブロックの各ブロックに対する消去カウントを取得するステップであって、前記複数のブロックの数が前記不揮発性メモリ内の使用可能な総数であるステップと、
前記複数のブロックに対する取得された消去カウントの合計を生成するステップであって、前記取得された消去カウントの合計が前記複数のブロックに対する複数のカウントから得られるものであるステップと、
平均消去カウントを生成するステップであって、前記平均消去カウントが前記取得された消去カウントの合計から生成されるものであるステップと、
前記メモリシステムのシステムメモリに、前記平均消去カウントのインジケータを記憶するステップであって、前記インジケータが摩耗一様化に用いられるものと、
を備える方法。 - 前記不揮発性メモリが、NANDフラッシュメモリである、請求項1に記載の方法。
- 前記複数のブロックの各ブロックに対する消去カウントを取得するステップが、
前記複数のブロックの各ブロックに対して、当該ブロック内に記憶された消去カウントを取得するステップを含み、更に、
前記複数のブロックの各ブロックに対する消去カウントを取得するステップの後に、システムメモリ内に記憶された前記複数のブロックそれぞれに対する消去カウント値を前記ブロックに対する取得された消去カウントに対応するように更新するステップを含むことを特徴とする、請求項1に記載の方法。 - 前記平均消去カウントを生成するステップが、
前記取得された消去カウントの合計を前記複数のブロックの数によって除算するステップを含むことを特徴とする、請求項3に記載の方法。 - 不揮発性メモリシステムであって、
複数のブロックを含む不揮発性メモリであって、各ブロックが当該ブロックに対する消去カウントを含むオーバーヘッドデータを記憶するための冗長領域を含むものと、
前記不揮発性メモリに関連付けられ、消去カウントブロックを含むシステムメモリと、
前記消去カウントブロックを管理する手段であって、
前記複数のブロックの第1のブロックの冗長領域内に記憶された消去カウントと前記消去カウントブロック内に記憶された前記第1のブロックに関連する消去カウント値とを比較する動作であって、前記消去カウントが前記ブロックが消去された回数を示すように構成されているものと、
前記第1のブロック内に記憶された消去カウントが前記第1のブロックに対する消去カウントブロック内に記憶された消去カウント値より大きいことを決定する前記比較動作に応答して、前記第1のブロックに対する前記消去カウントブロック内の消去カウント値を前記第1のブロック内に記憶された消去カウントに対応するように更新する動作と、
前記第1のブロックに対する冗長領域に記憶された消去カウントが前記消去カウントブロック内に記憶された前記第一のブロックに対する消去カウント値より小さいことを決定する前記比較動作に応答して、前記複数のブロックの各ブロックに対する消去カウントを各ブロックの冗長領域から取得する動作と、
前記複数のブロックの各ブロックが消去された平均回数を示す平均消去カウントを生成する動作であって、前記平均消去カウントが前記複数のブロックに対する複数の消去カウントから得られるものである動作と、
を含む動作シーケンスを実行する事によって前記消去カウントブロックを管理する手段と、
前記システムメモリに、前記平均消去カウントに対応する第1のインジケータを記憶する手段であって、前記インジケータが摩耗一様化に用いられるものと、
を備える不揮発性メモリシステム。 - 前記平均消去カウントを生成する動作が、
前記複数のブロックに対する取得された消去カウントの合計を生成する動作と、
前記合計を前記複数のブロックの数によって除算する動作と、
を含むことを特徴とする請求項5に記載の不揮発性メモリシステム。 - 前記管理手段が、
消去カウントブロック管理ソフトウエア・サブモジュールと、
前記消去カウントブロック管理ソフトウエア・サブモジュールを実行するためのマイクロプロセッサを含むことを特徴とする、請求項5に記載の不揮発性メモリシステム。 - 前記消去カウントブロック管理ソフトウエア・サブモジュールが、
前記複数のブロックの各ブロックに対する消去カウントを得るプログラムコードであって、前記複数のブロックの各ブロックに対する消去カウントが、前記複数のブロックの各ブロックが消去された回数を示すように構成され、前記複数のブロックが、前記不揮発性メモリ内の使用可能なブロックである、プログラムコードと、
前記複数のブロックに対する消去カウントの合計を生成するプログラムコードと、
前記平均消去カウントを生成するプログラムコードであって、前記平均消去カウントが、前記複数のブロックが消去された平均回数を示すように構成され、前記平均消去カウントを生成する前記プログラムコードが、前記合計を前記複数のブロック内のブロック数によって除算するプログラムコードを含む、プログラムコードと、
前記プログラムコードを記憶するメモリ領域と、
を備えることを特徴とする請求項7に記載の不揮発性メモリシステム。 - 前記不揮発性メモリが、NANDフラッシュメモリである、請求項8に記載の前記メモリシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/281,823 US7035967B2 (en) | 2002-10-28 | 2002-10-28 | Maintaining an average erase count in a non-volatile storage system |
US10/281,823 | 2002-10-28 | ||
PCT/US2003/028215 WO2004040584A1 (en) | 2002-10-28 | 2003-09-10 | Maintaining an average erase count in a non-volatile storage system |
Publications (2)
Publication Number | Publication Date |
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JP2006504220A JP2006504220A (ja) | 2006-02-02 |
JP4758648B2 true JP4758648B2 (ja) | 2011-08-31 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004548310A Expired - Lifetime JP4758648B2 (ja) | 2002-10-28 | 2003-09-10 | 不揮発性記憶システムにおける平均消去カウントの維持 |
Country Status (10)
Country | Link |
---|---|
US (2) | US7035967B2 (ja) |
EP (1) | EP1559112B1 (ja) |
JP (1) | JP4758648B2 (ja) |
KR (1) | KR20050067203A (ja) |
CN (1) | CN1701389A (ja) |
AT (1) | ATE378684T1 (ja) |
AU (1) | AU2003270449A1 (ja) |
DE (1) | DE60317551T2 (ja) |
TW (1) | TWI247292B (ja) |
WO (1) | WO2004040584A1 (ja) |
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US20040177212A1 (en) | 2004-09-09 |
EP1559112A1 (en) | 2005-08-03 |
DE60317551D1 (de) | 2007-12-27 |
US7287118B2 (en) | 2007-10-23 |
DE60317551T2 (de) | 2008-09-18 |
ATE378684T1 (de) | 2007-11-15 |
EP1559112B1 (en) | 2007-11-14 |
CN1701389A (zh) | 2005-11-23 |
TWI247292B (en) | 2006-01-11 |
JP2006504220A (ja) | 2006-02-02 |
TW200416707A (en) | 2004-09-01 |
KR20050067203A (ko) | 2005-06-30 |
WO2004040584A1 (en) | 2004-05-13 |
US20060149896A1 (en) | 2006-07-06 |
US7035967B2 (en) | 2006-04-25 |
AU2003270449A1 (en) | 2004-05-25 |
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