JP4747876B2 - イオンビーム照射装置 - Google Patents
イオンビーム照射装置 Download PDFInfo
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- JP4747876B2 JP4747876B2 JP2006040782A JP2006040782A JP4747876B2 JP 4747876 B2 JP4747876 B2 JP 4747876B2 JP 2006040782 A JP2006040782 A JP 2006040782A JP 2006040782 A JP2006040782 A JP 2006040782A JP 4747876 B2 JP4747876 B2 JP 4747876B2
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- ion beam
- electrode
- electric field
- field lens
- intermediate electrode
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- 238000010884 ion-beam technique Methods 0.000 title claims description 114
- 230000005684 electric field Effects 0.000 claims description 66
- 238000011144 upstream manufacturing Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- -1 arsenic ions Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Description
4 イオンビーム
8 ターゲット
20a、20b 電界レンズ
22 入口電極
24 中間電極
26 出口電極
52 直流電源
Claims (3)
- 進行方向と交差する面内におけるY方向の寸法が当該Y方向と直交するX方向の寸法よりも大きい形状をしている正のイオンビームをターゲットに照射する構成のイオンビーム照射装置であって、
前記ターゲットよりも上流側の位置に設けられていて、そこを通過する前記イオンビームをY方向において曲げる作用を奏するものであって、イオンビーム進行方向に互いに隙間をあけて並べられた入口電極、中間電極および出口電極を有する電界レンズを備えており、
前記電界レンズの中間電極は、イオンビーム進行方向の上流側および下流側の面に、Y方向において湾曲した凹表面をそれぞれ有しており、
前記電界レンズの入口電極および出口電極は、当該中間電極の凹表面に対向する面に当該凹表面にそれぞれ沿う凸表面をそれぞれ有しており、
前記電界レンズの入口電極および出口電極は接地電位に保たれ、中間電極は負電位であって、前記電界レンズから導出されるイオンビームのY方向における軌道状態を所望のものにする電位に保たれる、ことを特徴とするイオンビーム照射装置。 - 前記電界レンズの入口電極、中間電極および出口電極は、それぞれ、前記イオンビームが通過する隙間をあけてX方向に並べられていて互いに電気的に導通している一対の電極から成る請求項1記載のイオンビーム照射装置。
- 前記電界レンズの中間電極を前記負電位に保つ直流電源を備えている請求項1または2記載のイオンビーム照射装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006040782A JP4747876B2 (ja) | 2006-02-17 | 2006-02-17 | イオンビーム照射装置 |
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JP2006040782A JP4747876B2 (ja) | 2006-02-17 | 2006-02-17 | イオンビーム照射装置 |
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JP2007220522A JP2007220522A (ja) | 2007-08-30 |
JP4747876B2 true JP4747876B2 (ja) | 2011-08-17 |
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JP2006040782A Active JP4747876B2 (ja) | 2006-02-17 | 2006-02-17 | イオンビーム照射装置 |
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JP (1) | JP4747876B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010245053A (ja) * | 2006-06-26 | 2010-10-28 | Nissin Ion Equipment Co Ltd | イオン注入装置 |
US9336992B2 (en) | 2014-06-23 | 2016-05-10 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Ion implantation apparatus |
US9373481B2 (en) | 2014-02-10 | 2016-06-21 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | High-energy ion implanter, beam collimator, and beam collimation method |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090010067A (ko) * | 2006-04-26 | 2009-01-28 | 액셀리스 테크놀러지스, 인크. | 이온 빔 미립자들의 포획 및 이온 빔 포커싱을 위한 방법 및 시스템 |
JP4600426B2 (ja) * | 2006-06-26 | 2010-12-15 | 日新イオン機器株式会社 | イオン注入装置およびイオンビームの偏差角補正方法 |
US7705328B2 (en) * | 2007-10-31 | 2010-04-27 | Axcelis Technologies, Inc. | Broad ribbon beam ion implanter architecture with high mass-energy capability |
JP5331342B2 (ja) * | 2008-01-11 | 2013-10-30 | 株式会社日立ハイテクノロジーズ | イオンミリング装置 |
JP5194975B2 (ja) * | 2008-04-10 | 2013-05-08 | 日新イオン機器株式会社 | イオン注入装置 |
US9865422B2 (en) | 2013-03-15 | 2018-01-09 | Nissin Ion Equipment Co., Ltd. | Plasma generator with at least one non-metallic component |
US8994272B2 (en) * | 2013-03-15 | 2015-03-31 | Nissin Ion Equipment Co., Ltd. | Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereof |
US9275819B2 (en) | 2013-03-15 | 2016-03-01 | Nissin Ion Equipment Co., Ltd. | Magnetic field sources for an ion source |
JP6076834B2 (ja) * | 2013-05-28 | 2017-02-08 | 住友重機械イオンテクノロジー株式会社 | 高エネルギーイオン注入装置 |
US20150144810A1 (en) * | 2013-11-27 | 2015-05-28 | Varian Semiconductor Equipment Associates, Inc. | Triple mode electrostatic collimator |
TWI618110B (zh) * | 2015-08-20 | 2018-03-11 | 日新離子機器股份有限公司 | 離子植入系統 |
US9679745B2 (en) * | 2015-10-14 | 2017-06-13 | Varian Semiconductor Equipment Associates, Inc. | Controlling an ion beam in a wide beam current operation range |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5780863A (en) * | 1997-04-29 | 1998-07-14 | Eaton Corporation | Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter |
US20060043316A1 (en) * | 2003-06-10 | 2006-03-02 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter having enhanced low energy ion beam transport |
US6774377B1 (en) * | 2003-06-26 | 2004-08-10 | Axcelis Technologies, Inc. | Electrostatic parallelizing lens for ion beams |
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2006
- 2006-02-17 JP JP2006040782A patent/JP4747876B2/ja active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010245053A (ja) * | 2006-06-26 | 2010-10-28 | Nissin Ion Equipment Co Ltd | イオン注入装置 |
US9373481B2 (en) | 2014-02-10 | 2016-06-21 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | High-energy ion implanter, beam collimator, and beam collimation method |
US9336992B2 (en) | 2014-06-23 | 2016-05-10 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Ion implantation apparatus |
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JP2007220522A (ja) | 2007-08-30 |
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