JP4747284B2 - Insulated circuit board with cooling sink - Google Patents

Insulated circuit board with cooling sink Download PDF

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JP4747284B2
JP4747284B2 JP2005268094A JP2005268094A JP4747284B2 JP 4747284 B2 JP4747284 B2 JP 4747284B2 JP 2005268094 A JP2005268094 A JP 2005268094A JP 2005268094 A JP2005268094 A JP 2005268094A JP 4747284 B2 JP4747284 B2 JP 4747284B2
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circuit board
metal plate
thickness
insulating
cooling sink
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JP2007081201A (en
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祥郎 黒光
誠 鳥海
義幸 長友
博弥 石塚
陽一郎 馬場
智之 渡邊
卓也 安井
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP2005268094A priority Critical patent/JP4747284B2/en
Priority to PCT/JP2006/318395 priority patent/WO2007032486A1/en
Priority to US11/720,658 priority patent/US20090229864A1/en
Priority to EP06798058A priority patent/EP1926142A1/en
Priority to KR1020077010834A priority patent/KR20070118065A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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Description

この発明は、大電流、高電圧を制御する半導体装置に用いられる冷却シンク部付き絶縁回路基板に関するものである。 The present invention relates to high-current, cooling sink with an insulating circuit board that is used in a semiconductor device for controlling the high voltage.

この種の冷却シンク部付き絶縁回路基板としては、例えば下記特許文献１に示されるような、セラミックス等により形成された絶縁板と、該絶縁板の一方の表面に接合された回路板と、前記絶縁板の他方の表面に接合された金属板とを備える絶縁回路基板と、前記金属板の、前記絶縁板に接合された表面と反対側の下面に設けられた冷却部とを備える概略構成とされ、前記回路板の表面にはんだ層を介して半導体チップが接合されるようになっている。   As this type of insulated circuit board with a cooling sink part, for example, as shown in Patent Document 1 below, an insulating board formed of ceramics, etc., a circuit board joined to one surface of the insulating board, A schematic configuration comprising: an insulating circuit board including a metal plate bonded to the other surface of the insulating plate; and a cooling unit provided on a lower surface of the metal plate opposite to the surface bonded to the insulating plate. A semiconductor chip is bonded to the surface of the circuit board via a solder layer.

前記冷却部は、放熱板と内部に冷媒が供給される冷却シンク部とを備え、これらの放熱板と冷却シンク部とが、これらの間に熱伝導性グリース（例えばシリコーングリース）を介してねじにより締結されて接続された構成とされている。そして、前記冷却部の放熱板が、前記金属板にはんだ層を介して接合されている。
特開平８−２６４６８０号公報 The cooling part includes a heat sink and a cooling sink part to which a refrigerant is supplied. The heat sink and the cooling sink part are screwed with a heat conductive grease (for example, silicone grease) between them. It is set as the structure fastened and connected by. And the heat sink of the said cooling part is joined to the said metal plate through the solder layer.
JP-A-8-264680

ところで、近年では、前記冷却シンク部付き絶縁回路基板の回路板の表面に半導体チップが接合されてなるパワーモジュールの高出力化に伴い、当該パワーモジュールを構成する前記各構成要素同士の接合信頼性を低減させることなく、このパワーモジュールの積層方向におけるトータル熱抵抗を低減させることに対する要求が高まっている。しかし、前記熱伝導性グリースは前記トータル熱抵抗を低減させることに対して大きな阻害要因となっていた。   By the way, in recent years, with the increase in output of a power module in which a semiconductor chip is bonded to the surface of the circuit board of the insulating circuit board with the cooling sink portion, the bonding reliability of the components constituting the power module is increased. There is an increasing demand for reducing the total thermal resistance in the stacking direction of the power modules without reducing the power. However, the thermally conductive grease has been a major obstacle to reducing the total thermal resistance.

この発明はこのような事情を考慮してなされたもので、各構成要素同士の接合信頼性を低減させることなく、積層方向におけるトータル熱抵抗を低減させることができる冷却シンク部付き絶縁回路基板を提供することを目的とする。 The present invention has been made in view of such circumstances, the components without reducing the bonding reliability between, cooling sink with an insulating circuit that can be reduced the total thermal resistance in the stacking direction An object is to provide a substrate.

このような課題を解決して、前記目的を達成するために、本発明の冷却シンク部付き絶縁回路基板は、ＡｌＮからなる絶縁板と、該絶縁板の一方の表面に接合された回路板と、前記絶縁板の他方の表面に接合された金属板とを備えた絶縁回路基板と、前記金属板の下面に接合された冷却シンク部とを備えた冷却シンク部付き絶縁回路基板であって、前記回路板の表面に第１はんだ層を介して半導体チップが接合される構成とされ、前記冷却シンク部は、純Ａｌ若しくはＡｌ合金により形成され、冷媒が循環する内部空間を有し、前記金属板と前記冷却シンク部とは、厚さ０．０５ｍｍ〜０．５ｍｍからなるＳｎを主成分とする第２はんだ層を介して接合されており、前記回路板および金属板は、純Ａｌ若しくはＡｌ合金により形成されるとともに、前記回路板の厚さ（ａ）が０．２ｍｍ以上０．８ｍｍ以下、前記金属板の厚さ（ｂ）が０．６ｍｍ以上１．５ｍｍ以下で、ａ／ｂ＜１であることを特徴とする。
In order to solve the above problems and achieve the above object, an insulating circuit board with a cooling sink portion of the present invention includes an insulating plate made of AlN , and a circuit board bonded to one surface of the insulating plate. An insulating circuit board comprising a metal plate joined to the other surface of the insulating plate, and an insulating circuit board with a cooling sink part comprising a cooling sink part joined to the lower surface of the metal plate, A semiconductor chip is joined to the surface of the circuit board via a first solder layer, the cooling sink portion is formed of pure Al or an Al alloy, has an internal space in which a coolant circulates, and the metal The plate and the cooling sink portion are bonded via a second solder layer mainly composed of Sn having a thickness of 0.05 mm to 0.5 mm, and the circuit plate and the metal plate are made of pure Al or Al When formed from an alloy Furthermore, the thickness (a) of the circuit board is 0.2 mm or more and 0.8 mm or less, the thickness (b) of the metal board is 0.6 mm or more and 1.5 mm or less, and a / b <1. It is characterized by.

この発明では、前記回路板および金属板が、純Ａｌ若しくはＡｌ合金により形成されるとともに、前記回路板の厚さ（ａ）が０．２ｍｍ以上０．８ｍｍ以下、前記金属板の厚さ（ｂ）が０．６ｍｍ以上１．５ｍｍ以下で、ａ／ｂ＜１とされているので、前記金属板を前記冷却シンク部に直接接合することにより、熱伝導性グリースを介在させず、しかも接合界面数を低減させて、積層方向におけるトータル熱抵抗の低減されたパワーモジュールを形成しても、前記半導体チップと回路板との接合部ならびに前記金属板と冷却シンク部との接合部に発生する応力を緩和させることが可能になる。 In the present invention, the circuit board and the metal plate are made of pure Al or Al alloy, and the thickness (a) of the circuit board is 0.2 mm or more and 0.8 mm or less, and the thickness (b ) Is not less than 0.6 mm and not more than 1.5 mm, and a / b <1 , so that the metal plate is directly joined to the cooling sink portion, so that no thermally conductive grease is interposed, and the joining interface Even when a power module with a reduced total thermal resistance in the stacking direction is formed by reducing the number, the stress generated at the junction between the semiconductor chip and the circuit board and at the junction between the metal plate and the cooling sink Can be relaxed.

すなわち、前記金属板の厚さ（ｂ）が０．６ｍｍ以上１．５ｍｍ以下で、かつａ／ｂ＜１とされて、その厚さが厚くされているので、金属板の上面に熱膨張係数の小さい絶縁板が接合されて、この絶縁板により金属板の上面側における熱変形が拘束されたとしても、金属板の下面側における熱変形が絶縁板により拘束されることを抑制することが可能になる。また、前記回路板の厚さ（ａ）が０．２ｍｍ以上０．８ｍｍ以下で、かつａ／ｂ＜１とされて、その厚さが薄くされているので、この回路板の上下面に、熱膨張係数が小さい半導体チップおよび絶縁板がそれぞれ接合されることにより、この回路板の熱変形を偏りなく均等に拘束することが可能になる。 That is, since the thickness (b) of the metal plate is 0.6 mm or more and 1.5 mm or less and a / b <1, and the thickness is increased, the thermal expansion coefficient is applied to the upper surface of the metal plate. Even if a small insulating plate is joined and thermal deformation on the upper surface side of the metal plate is constrained by this insulating plate, it is possible to suppress thermal deformation on the lower surface side of the metal plate from being constrained by the insulating plate. become. Further, since the thickness (a) of the circuit board is 0.2 mm or more and 0.8 mm or less and a / b <1, and the thickness thereof is reduced, By joining the semiconductor chip and the insulating plate each having a small thermal expansion coefficient, it becomes possible to evenly restrain the thermal deformation of the circuit board evenly.

以上により、パワーモジュールを構成する前記各構成要素同士の接合信頼性を低減させることなく、このパワーモジュールの積層方向におけるトータル熱抵抗を低減させることが可能になる絶縁回路基板を提供することができる。   As described above, it is possible to provide an insulated circuit board capable of reducing the total thermal resistance in the stacking direction of the power modules without reducing the bonding reliability between the components constituting the power module. .

ここで、前記回路板の厚さが０．２ｍｍより小さいと、該回路板に流せる電流量が制限され、また、この厚さが０．８ｍｍより大きいと、絶縁板により回路板の熱変形を偏りなく均等に拘束させることが困難になり、前記第１はんだ層における熱サイクル時の亀裂進展速度が大きくなって、接合信頼性を低下させるおそれがある。   Here, if the thickness of the circuit board is less than 0.2 mm, the amount of current that can be passed through the circuit board is limited. If the thickness is greater than 0.8 mm, the insulating board causes thermal deformation of the circuit board. It becomes difficult to restrain evenly without bias, and the crack growth rate during the thermal cycle in the first solder layer increases, which may reduce the bonding reliability.

前記金属板の厚さが０．６ｍｍより小さいと、この金属板の熱変形が、その上面側のみならず下面側も絶縁板により拘束されることになり、前記第２はんだ層における熱サイクル時の亀裂進展速度が大きくなって、接合信頼性が低下するおそれがあり、また、この厚さが１．５ｍｍより大きいと、金属板の熱変形により、絶縁板および回路板が変形させられることによって、前記第１はんだ層における熱サイクル時の亀裂進展速度が大きくなり、接合信頼性を低下させるおそれがある。   If the thickness of the metal plate is less than 0.6 mm, thermal deformation of the metal plate is restricted not only on the upper surface side but also on the lower surface side by the insulating plate, and during the thermal cycle in the second solder layer The crack growth rate of the metal plate increases and the bonding reliability may decrease. If the thickness exceeds 1.5 mm, the insulating plate and the circuit board are deformed due to thermal deformation of the metal plate. The crack growth rate during the thermal cycle in the first solder layer is increased, and there is a possibility that the joint reliability is lowered.

この発明によれば、前記金属板と冷却シンク部とがＳｎを主成分とする第２はんだ層により接合されているので、冷却シンク部および絶縁板の熱膨張係数が異なることによって、接合界面に応力が生じようとした場合においても、この応力を前記第２はんだ層により吸収させることが可能になり、パワーモジュールの接合信頼性をさらに向上させることができる。   According to the present invention, since the metal plate and the cooling sink portion are joined by the second solder layer containing Sn as a main component, the thermal expansion coefficients of the cooling sink portion and the insulating plate are different, so that Even when a stress is about to occur, this stress can be absorbed by the second solder layer, and the joining reliability of the power module can be further improved.

この発明によれば、各構成要素同士の接合信頼性を低減させることなく、積層方向におけるトータル熱抵抗を低減させることが可能になる冷却シンク部付き絶縁回路基板を提供することができる。 According to the present invention, it is possible to provide a bonding reliability without reducing, cooling sink with an insulating circuit board ing to be possible to reduce the total thermal resistance in the stacking direction between the components.

以下、図面を参照し、この発明の実施の形態について説明する。
本実施形態のパワーモジュール１０は、絶縁回路基板２０と、該絶縁回路基板２０の一方の表面側に設けられた半導体チップ（発熱体）３０と、絶縁回路基板２０の他方の表面側に設けられた冷却シンク部３１とを備えている。言い換えると、パワーモジュール１０は、絶縁回路基板２０および冷却シンク部３１からなる冷却シンク部付き絶縁回路基板１０ａと半導体チップ３０とを備えている。 Embodiments of the present invention will be described below with reference to the drawings.
The power module 10 of the present embodiment is provided on the insulating circuit board 20, the semiconductor chip (heating element) 30 provided on one surface side of the insulating circuit board 20, and the other surface side of the insulating circuit board 20. The cooling sink portion 31 is provided. In other words, the power module 10 includes an insulating circuit board 10 a with a cooling sink part, which includes the insulating circuit board 20 and the cooling sink part 31, and the semiconductor chip 30.

絶縁回路基板２０は、絶縁板１１と、該絶縁板１１の一方の表面に接合された回路板１２と、絶縁板１１の他方の表面に接合された金属板１３とを備えている。そして、回路板１２の表面に第１はんだ層１４を介して半導体チップ３０が接合され、金属板１３の、絶縁板１１に接合された表面と反対側の下面に冷却シンク部３１が設けられている。   The insulating circuit board 20 includes an insulating plate 11, a circuit plate 12 bonded to one surface of the insulating plate 11, and a metal plate 13 bonded to the other surface of the insulating plate 11. The semiconductor chip 30 is bonded to the surface of the circuit board 12 via the first solder layer 14, and the cooling sink portion 31 is provided on the lower surface of the metal plate 13 opposite to the surface bonded to the insulating plate 11. Yes.

ここで、回路板１２および金属板１３の表面にはそれぞれ、図示されない厚さ約２μｍのＮｉメッキ層が形成されており、このＮｉメッキ層の形成された回路板１２の表面に、第１はんだ層１４を介して半導体チップ３０が接合され、また、Ｎｉメッキ層の形成された回路板１２および金属板１３の各表面と絶縁板１１とがろう付けにより接合されている。   Here, a Ni plating layer having a thickness of about 2 μm (not shown) is formed on the surfaces of the circuit board 12 and the metal plate 13, respectively, and the first solder is formed on the surface of the circuit board 12 on which the Ni plating layer is formed. The semiconductor chip 30 is bonded via the layer 14, and each surface of the circuit board 12 and the metal plate 13 on which the Ni plating layer is formed and the insulating plate 11 are bonded by brazing.

なお、絶縁板１１が、ＡｌＮ、Ｓｉ３Ｎ４等の窒化物系セラミックス、若しくはＡｌ２Ｏ３等の酸化物系セラミックスにより形成され、回路板１２および金属板１３が、純Ａｌ若しくはＡｌ合金により形成された構成において、絶縁板１１と回路板１２および金属板１３とを接合するろう材は、Ａｌ−Ｓｉ系、Ａｌ−Ｇｅ系、Ａｌ−Ｃｕ系、Ａｌ−Ｍｇ系またはＡｌ−Ｍｎ系のろう材から選ばれる１または２以上のろう材とされる。ここで、回路板１２および金属板１３は、熱伝達等の観点から、純Ａｌ若しくは純度９８％以上のＡｌ合金により形成されるのが望ましい。 The insulating plate 11 is made of nitride ceramics such as AlN, Si 3 N 4 or oxide ceramics such as Al 2 O 3 , and the circuit board 12 and the metal plate 13 are made of pure Al or Al alloy. In the formed structure, the brazing material that joins the insulating plate 11 to the circuit board 12 and the metal plate 13 is Al—Si, Al—Ge, Al—Cu, Al—Mg, or Al—Mn. One or more brazing materials selected from brazing materials are used. Here, the circuit board 12 and the metal plate 13 are preferably formed of pure Al or an Al alloy having a purity of 98% or more from the viewpoint of heat transfer or the like.

冷却シンク部３１は、純Ａｌ、Ａｌ合金、純Ｃｕ若しくはＣｕ合金等の金属若しくはＡｌＳｉＣ等の金属セラミック複合材により形成されるとともに、表面に金属板１３が設けられる本体部３１ａと、表面に内部空間３１ｂと連通する開口部が形成された箱体３１ｃとを備えている。ここで、本体部３１ａは、製造上、純Ａｌ、Ａｌ合金、純Ｃｕ若しくはＣｕ合金等の金属若しくはＡｌＳｉＣ等の金属セラミック複合材のいずれか１つの材料から構成されるのが望ましいが、複数の材料を積層した複合体とすることもできる。例えば、本体部３１ａの内部空間３１ｂ側の部分を純Ａｌとし、金属板１３側の部分に純Ｃｕ板を設けた複合体とすることができる。この場合、純Ｃｕ板は、前記純Ａｌの熱膨張係数とＡｌＮ（絶縁板１１）の熱膨張係数の中間の熱膨張係数を有することから、応力緩衝部材として機能する。本体部３１ａの、前記表面と反対側の下面には、下方に向けて延在し、かつこの本体部３１ａの幅方向（図１の紙面に奥行き方向）に延在する冷却フィン３１ｄがその長さ方向（図１の紙面の左右方向）に複数所定の間隔をあけて形成されている。なお、本体部３１ａは、熱伝達および加工性等の観点から、純Ａｌ若しくはＡｌ合金が望ましく、Ａｌ合金では特に純度９８％以上が良い。   The cooling sink portion 31 is formed of a metal such as pure Al, Al alloy, pure Cu or Cu alloy, or a metal ceramic composite material such as AlSiC, and has a body portion 31a provided with a metal plate 13 on the surface, and an internal surface on the surface. And a box 31c having an opening communicating with the space 31b. Here, it is preferable that the main body 31a is made of any one material of a metal such as pure Al, Al alloy, pure Cu or Cu alloy, or a metal ceramic composite material such as AlSiC. A composite in which materials are laminated can also be used. For example, a composite body in which a portion of the main body portion 31a on the inner space 31b side is made of pure Al and a portion of the metal plate 13 side is provided with a pure Cu plate can be obtained. In this case, since the pure Cu plate has a thermal expansion coefficient intermediate between the thermal expansion coefficient of pure Al and the thermal expansion coefficient of AlN (insulating plate 11), it functions as a stress buffer member. A cooling fin 31d extending downward and extending in the width direction of the main body 31a (in the depth direction on the paper surface of FIG. 1) is provided on the lower surface of the main body 31a opposite to the surface. A plurality of predetermined intervals are formed in the vertical direction (left and right direction in FIG. 1). The main body 31a is preferably pure Al or an Al alloy from the viewpoints of heat transfer, workability, and the like, and the purity of the Al alloy is preferably 98% or more.

この冷却シンク部３１は、本体部３１ａの冷却フィン３１ｄが、箱体３１ｃの内部空間３１ｂに突出した状態で、本体部３１ａの前記下面が、箱体３１ｃの前記開口部を閉塞する構成とされている。さらに、本体部３１ａの前記下面と、箱体３１ｃの表面における前記開口部の周縁部との間には、熱伝導グリースが介在されておらず、本体部３１ａの前記下面と、箱体３１ｃの表面における前記開口部の周縁部とは、直接接触した構成とされている。   The cooling sink 31 is configured such that the lower surface of the main body 31a closes the opening of the box 31c in a state where the cooling fins 31d of the main body 31a protrude into the internal space 31b of the box 31c. ing. Further, no thermal conductive grease is interposed between the lower surface of the main body 31a and the peripheral edge of the opening on the surface of the box 31c, and the lower surface of the main body 31a and the box 31c It is set as the structure which contacted the peripheral part of the said opening part in the surface directly.

そして、この閉塞された前記内部空間３１ｂに冷却液や冷却空気などの冷媒を供給および回収する図示されない冷媒循環手段が設けられ、該手段により前記冷媒が、本体部３１ａの前記下面および冷却フィン３１ｄの全域に接触するようになっている。
すなわち、前記内部空間３１ｂに供給された冷媒により、半導体チップ３０から冷却シンク部３１に伝導された熱を回収することによって、半導体チップ３０からの熱をパワーモジュール１０から放散させるようになっている。なお、冷却シンク部３１の本体部３１ａの熱伝達係数は約６０００Ｗ／℃・ｍ２〜約１５０００Ｗ／℃・ｍ２とされている。 The closed internal space 31b is provided with a refrigerant circulation means (not shown) for supplying and collecting a refrigerant such as a coolant and cooling air, and the refrigerant is supplied to the lower surface of the main body 31a and the cooling fins 31d by the means. It comes to contact the whole area.
That is, heat from the semiconductor chip 30 is dissipated from the power module 10 by recovering the heat conducted from the semiconductor chip 30 to the cooling sink portion 31 by the coolant supplied to the internal space 31b. . The heat transfer coefficient of the body portion 31a of the cooling sink 31 is approximately 6000W / ℃ · m 2 ~ about 15000W / ℃ · m 2.

さらに本実施形態では、金属板１３と本体部３１ａとは、ヤング率が３５ＧＰａ以上、０．２％耐力が４０ＭＰａ以上、引張強度が４０ＭＰａ以上のＳｎを主成分とする第２はんだ層１５により接合されている。金属板１３、および本体部３１ａの互いに対向する表面には、図示されないＮｉメッキ層（金属板１３では厚さ約２μｍ、本体部３１ａでは厚さ約５μｍ）が形成されており、これらの各Ｎｉメッキ層と第２はんだ層１５とが接合されている。図示の例では、金属板１３の下面の略全域が、第２はんだ層１５により接合されている。また、第２はんだ層１５は、Ｓｎ８５ｗｔ％以上、Ａｇ０．５ｗｔ％以上、Ｃｕ０．１ｗｔ％以上である３元以上の多元系合金からなるはんだにより形成されている。
なお、第１はんだ層１４の材質は特に限定されるものではないが、Ｓｎを主成分とするはんだにより形成されるのが望ましい。 Furthermore, in the present embodiment, the metal plate 13 and the main body 31a are joined by the second solder layer 15 mainly composed of Sn having a Young's modulus of 35 GPa or more, a 0.2% proof stress of 40 MPa or more, and a tensile strength of 40 MPa or more. Has been. Ni plating layers (not shown) (thickness of about 2 μm for the metal plate 13 and thickness of about 5 μm for the main body 31a) are formed on the surfaces of the metal plate 13 and the main body 31a facing each other. The plating layer and the second solder layer 15 are joined. In the illustrated example, substantially the entire lower surface of the metal plate 13 is joined by the second solder layer 15. Further, the second solder layer 15 is formed of a solder made of a ternary or higher multicomponent alloy of Sn 85 wt% or more, Ag 0.5 wt% or more, and Cu 0.1 wt% or more.
The material of the first solder layer 14 is not particularly limited, but is preferably formed of solder containing Sn as a main component.

また、絶縁板１１の縦、横および厚さがそれぞれ１０ｍｍ〜１００ｍｍ、１０ｍｍ〜１００ｍｍおよび０．２ｍｍ〜１．０ｍｍとされ、回路板１２の縦、横および厚さがそれぞれ１０ｍｍ〜１００ｍｍ、１０ｍｍ〜１００ｍｍおよび０．２ｍｍ以上０．８ｍｍ以下とされ、金属板１３の縦、横および厚さがそれぞれ１０ｍｍ〜１００ｍｍ、１０ｍｍ〜１００ｍｍおよび０．６ｍｍ以上１．５ｍｍ以下とされたパワーモジュール１０が、−４０℃〜１０５℃の温度範囲で使用される場合において、第１はんだ層１４および第２はんだ層１５の厚さは０．０５ｍｍ〜０．５ｍｍとされている。   The length, width, and thickness of the insulating plate 11 are 10 mm to 100 mm, 10 mm to 100 mm, and 0.2 mm to 1.0 mm, respectively, and the length, width, and thickness of the circuit board 12 are 10 mm to 100 mm, 10 mm to 10 mm, respectively. The power module 10 in which the length, width, and thickness of the metal plate 13 are 10 mm to 100 mm, 10 mm to 100 mm, and 0.6 mm to 1.5 mm, respectively, is 100 mm and 0.2 mm to 0.8 mm. When used in a temperature range of 40 ° C. to 105 ° C., the thicknesses of the first solder layer 14 and the second solder layer 15 are 0.05 mm to 0.5 mm.

また、前記の数値範囲において、回路板１２の厚さは金属板１３の厚さより小さくされており、回路板１２の厚さをａ、金属板１３の厚さをｂとすると、ａ／ｂ＜１の関係を満たしている。 In the above numerical range, the thickness of the circuit board 12 is smaller than the thickness of the metal plate 13, and when the thickness of the circuit board 12 is a and the thickness of the metal plate 13 is b, a / b < The relationship of 1 is satisfied.

以上説明したように、本実施形態に係るパワーモジュール１０によれば、回路板１２および金属板１３が、純Ａｌ若しくはＡｌ合金により形成されるとともに、回路板１２の厚さ（ａ）が０．２ｍｍ以上０．８ｍｍ以下、金属板１３の厚さ（ｂ）が０．６ｍｍ以上１．５ｍｍ以下で、ａ／ｂ＜１とされているので、金属板１３を冷却シンク部３１の本体部３１ａに第２はんだ層１５を介して直接接合することにより、熱伝導性グリースを介在させず、しかも接合界面数を低減させて、積層方向におけるトータル熱抵抗の低減されたパワーモジュール１０を形成しても、半導体チップ３０と回路板１２との接合部ならびに金属板１３と冷却シンク部３１の本体部３１ａとの接合部に発生する応力を緩和させることが可能になる。 As described above, according to the power module 10 according to the present embodiment, the circuit board 12 and the metal plate 13 are formed of pure Al or an Al alloy, and the thickness (a) of the circuit board 12 is 0. Since the thickness (b) of the metal plate 13 is 2 mm or more and 0.8 mm or less, and the thickness (b) of the metal plate 13 is 0.6 mm or more and 1.5 mm or less, and a / b <1 , The power module 10 having a reduced total thermal resistance in the laminating direction is formed by directly bonding the first and second solder layers 15 to each other to reduce the number of bonding interfaces without interposing thermal conductive grease. In addition, it is possible to relieve stress generated at the joint between the semiconductor chip 30 and the circuit board 12 and at the joint between the metal plate 13 and the main body 31a of the cooling sink 31.

すなわち、金属板１３の厚さ（ｂ）が０．６ｍｍ以上１．５ｍｍ以下で、かつａ／ｂ＜１とされて、その厚さが厚くされているので、金属板１３の上面に熱膨張係数の小さい絶縁板１１が接合されて、この絶縁板１１により金属板１３の上面側における熱変形が拘束されたとしても、金属板１３の下面側における熱変形が絶縁板１１により拘束されることを抑制することが可能になる。また、回路板１２の厚さ（ａ）が０．２ｍｍ以上０．８ｍｍ以下で、かつａ／ｂ＜１とされて、その厚さが薄くされているので、この回路板１２の上下面に、熱膨張係数が小さい半導体チップ３０および絶縁板１１がそれぞれ接合されることにより、この回路板１２の熱変形を偏りなく均等に拘束することが可能になる。 That is, since the thickness (b) of the metal plate 13 is 0.6 mm or more and 1.5 mm or less and a / b <1, and the thickness is increased, thermal expansion is caused on the upper surface of the metal plate 13. Even if the insulating plate 11 having a small coefficient is joined and thermal deformation on the upper surface side of the metal plate 13 is restrained by the insulating plate 11, thermal deformation on the lower surface side of the metal plate 13 is restrained by the insulating plate 11. Can be suppressed. Further, since the thickness (a) of the circuit board 12 is 0.2 mm or more and 0.8 mm or less and a / b <1, and the thickness thereof is reduced, By joining the semiconductor chip 30 and the insulating plate 11 having a small thermal expansion coefficient, the thermal deformation of the circuit board 12 can be evenly restrained evenly.

以上により、パワーモジュール１０を構成する前記各構成要素同士の接合信頼性を低減させることなく、このパワーモジュール１０の積層方向におけるトータル熱抵抗を低減させることが可能になる絶縁回路基板２０を提供することができる。   As described above, there is provided an insulating circuit board 20 capable of reducing the total thermal resistance in the stacking direction of the power modules 10 without reducing the bonding reliability between the components constituting the power module 10. be able to.

ここで、回路板１２の厚さが０．２ｍｍより小さいと、該回路板１２に流せる電流量が制限され、また、この厚さが０．８ｍｍより大きいと、絶縁板１１により回路板１２の熱変形を偏りなく均等に拘束させることが困難になり、第１はんだ層１４における熱サイクル時の亀裂進展速度が大きくなって、接合信頼性を低下させるおそれがある。   Here, if the thickness of the circuit board 12 is smaller than 0.2 mm, the amount of current that can be passed through the circuit board 12 is limited. If the thickness is larger than 0.8 mm, the insulating board 11 causes the circuit board 12 to It becomes difficult to restrain thermal deformation evenly without bias, and the crack growth rate during the thermal cycle in the first solder layer 14 increases, which may reduce the bonding reliability.

金属板１３の厚さが０．６ｍｍより小さいと、この金属板１３の熱変形が、その上面側のみならず下面側も絶縁板１１により拘束されることになり、第２はんだ層１５における熱サイクル時の亀裂進展速度が大きくなって、接合信頼性が低下するおそれがあり、また、この厚さが１．５ｍｍより大きいと、金属板１３の熱変形により、絶縁板１１および回路板１２が変形させられることによって、第１はんだ層１４における熱サイクル時の亀裂進展速度が大きくなり、接合信頼性を低下させるおそれがある。   If the thickness of the metal plate 13 is smaller than 0.6 mm, the thermal deformation of the metal plate 13 is restricted not only on the upper surface side but also on the lower surface side by the insulating plate 11, and the heat in the second solder layer 15. There is a risk that the crack propagation rate during the cycle will increase, and the bonding reliability may be reduced. If the thickness is greater than 1.5 mm, the insulating plate 11 and the circuit board 12 will be deformed due to thermal deformation of the metal plate 13. By being deformed, the crack propagation rate during the thermal cycle in the first solder layer 14 is increased, and there is a concern that the joint reliability is lowered.

また、金属板１３と冷却シンク部３１の本体部３１ａとがＳｎを主成分とする第２はんだ層１５により接合されているので、本体部３１ａおよび絶縁板１１の熱膨張係数が異なることによって、パワーモジュール１０、特に接合界面に応力が生じようとした場合においても、この応力を第２はんだ層１５により吸収させることが可能になり、パワーモジュール１０の接合信頼性をさらに向上させることができる。   Further, since the metal plate 13 and the main body portion 31a of the cooling sink portion 31 are joined by the second solder layer 15 containing Sn as a main component, the thermal expansion coefficients of the main body portion 31a and the insulating plate 11 are different. Even when a stress is about to be generated in the power module 10, particularly the bonding interface, the stress can be absorbed by the second solder layer 15, and the bonding reliability of the power module 10 can be further improved.

ここで、以上の作用効果のうち、金属板１３の厚さを回路板１２の厚さよりも大きくしたことにより、第２はんだ層１５に生ずる応力を低減できることについて、実験により検証した。   Here, among the effects described above, it was verified by experiments that the stress generated in the second solder layer 15 can be reduced by making the thickness of the metal plate 13 larger than the thickness of the circuit board 12.

本実験に供する冷却シンク部付き絶縁回路基板として、ＡｌＮを主成分とする材質により形成された絶縁板１１の縦、横および厚さがそれぞれ５０ｍｍ、５０ｍｍおよび０．６３５ｍｍとされ、回路板１２および金属板１３の縦および横がそれぞれ４８ｍｍおよび４８ｍｍとされ、ＡＡ（Ａｌｍｉｎｕｍ Ａｓｓｏｃｉａｔｉｏｎ）６０６３系のＡｌ合金により形成された冷却シンク部３１は、その本体部３１ａの縦、横および厚さがそれぞれ１００ｍｍ、１００ｍｍおよび３ｍｍとされるとともに、冷却フィン３１ｄの厚さ（図１の紙面の左右方向の大きさ）、長さ（図１の紙面の上下方向の大きさ）およびピッチがそれぞれ１ｍｍ、８ｍｍおよび３ｍｍとされ、Ｓｎ３．５％Ａｇ０．７５％Ｃｕからなる第２はんだ層１５の厚さが０．３ｍｍとされた構成を採用した。この構成において、回路板１２および金属板１３の厚さを、０．２ｍｍから１．５ｍｍまでの範囲で種々異ならせた４９種類の冷却シンク部付き絶縁回路基板を形成した。以下、回路板１２の厚さ（ａ）が０．２ｍｍ以上０．８ｍｍ以下、金属板１３の厚さ（ｂ）が０．６ｍｍ以上１．５ｍｍ以下で、ａ／ｂ＜１の構成を実施例といい、これ以外の構成を比較例という。 As an insulating circuit board with a cooling sink portion used in this experiment, the length, width and thickness of the insulating plate 11 made of a material mainly composed of AlN are 50 mm, 50 mm and 0.635 mm, respectively. The vertical and horizontal dimensions of the metal plate 13 are 48 mm and 48 mm, respectively, and the cooling sink portion 31 formed of an AA (Alminum Association) 6063 series Al alloy has a vertical, horizontal and thickness of the main body portion 31a of 100 mm, respectively. The cooling fin 31d has a thickness (size in the horizontal direction of the paper surface in FIG. 1), a length (size in the vertical direction of the paper surface in FIG. 1), and a pitch of 1 mm, 8 mm, and 3 mm, respectively. The thickness of the second solder layer 15 made of Sn3.5% Ag0.75% Cu is 0.3 m. The configuration designated as m was adopted. In this configuration, 49 types of insulated circuit boards with cooling sink portions were formed in which the thicknesses of the circuit board 12 and the metal plate 13 were varied in a range from 0.2 mm to 1.5 mm. Hereinafter, the thickness of the circuit board 12 (a) is 0.2mm or more 0.8mm or less, the thickness of the metal plate 13 (b) is at 0.6mm or 1.5mm or less, carrying out the structure of a / b <1 It is called an example, and the other configuration is called a comparative example.

なお、回路板１２は純度９９．９９％のＡｌ合金、金属板１３は純度９９．５％のＡｌ合金によりそれぞれ形成した。また、金属板１３と冷却シンク部３１の本体部３１ａとの第２はんだ層１５を介した接合は、予め、金属板１３が接合される冷却シンク部の本体部３１ａの表面と、金属板１３の表面とに、前記Ｎｉメッキ層を無電解メッキにより形成しておき、その後、温度が３００℃とされた還元雰囲気下で実施した。また、この接合の際、同時に第２はんだ層１５と同じはんだ材料により、縦、横および厚さがそれぞれ１０ｍｍ、１０ｍｍおよび０．３ｍｍとされたＡｌＮを用いたヒーターチップを回路板１２に接合した。このヒータチップは、本検証試験の実施に際して半導体チップ３０に代えて採用したものである（以下、この構成を「パワーモジュール」という）。さらに、回路板１２および金属板１３と絶縁板１１とは、Ａｌ−Ｓｉろう箔を用いてあらかじめ真空ろう付けした。なお、このろう付けに際し予め、回路板１２および金属板１３の各表面に厚さ２μｍのＮｉメッキ層を無電解メッキにより形成した。   The circuit board 12 was formed of an Al alloy having a purity of 99.99%, and the metal plate 13 was formed of an Al alloy having a purity of 99.5%. In addition, the metal plate 13 and the main body portion 31a of the cooling sink portion 31 are joined via the second solder layer 15 in advance, the surface of the main body portion 31a of the cooling sink portion to which the metal plate 13 is joined, and the metal plate 13. The Ni plating layer was formed on the surface of the substrate by electroless plating, and then performed in a reducing atmosphere at a temperature of 300 ° C. At the same time, a heater chip using AlN having a length, width, and thickness of 10 mm, 10 mm, and 0.3 mm, respectively, was joined to the circuit board 12 by the same solder material as that of the second solder layer 15. . This heater chip is employed in place of the semiconductor chip 30 in carrying out this verification test (this configuration is hereinafter referred to as “power module”). Furthermore, the circuit board 12, the metal plate 13, and the insulating plate 11 were previously vacuum brazed using an Al—Si brazing foil. In this brazing, a Ni plating layer having a thickness of 2 μm was previously formed on each surface of the circuit board 12 and the metal plate 13 by electroless plating.

以上の各パワーモジュールをそれぞれ、フッ素系溶媒からなる液相雰囲気下に置いて、その雰囲気温度を−４０℃から１０５℃に１０分間で上昇させ、１０５℃から−４０℃に１０分間で下降させる温度履歴を１サイクルとした温度サイクルを前記各パワーモジュールに付与し、該付与前の熱抵抗値（以下、「初期熱抵抗値」という）と比べて１０％以上の上昇が確認されたときの熱サイクル数を、このパワーモジュールの熱サイクル寿命として測定した。ここで、第１、第２はんだ層１４、１５等の接合部等に亀裂が発生および進展したときに、熱抵抗値が上昇することになる。この熱サイクル寿命の測定は、５００サイクル経過するたびに熱抵抗値を測定することにより実施した。   Each of the above power modules is placed in a liquid phase atmosphere composed of a fluorinated solvent, and the ambient temperature is increased from −40 ° C. to 105 ° C. over 10 minutes and then decreased from 105 ° C. to −40 ° C. over 10 minutes. When a temperature cycle with a temperature history of 1 cycle is applied to each power module, and an increase of 10% or more is confirmed compared to the thermal resistance value before the application (hereinafter referred to as “initial thermal resistance value”). The number of thermal cycles was measured as the thermal cycle life of this power module. Here, when cracks are generated and propagated in the joints of the first and second solder layers 14 and 15, the thermal resistance value is increased. The measurement of the thermal cycle life was carried out by measuring the thermal resistance value after every 500 cycles.

なお、熱抵抗値の測定は、冷却シンク部３１の内部空間３１ｂに水温５０℃の冷却水を循環させて、冷却フィン３１ｄの外表面を一定温度に保った状態で、ヒーターチップに１００Ｗの電力を供給して発熱させる。このヒーターチップの温度が一定になった後に、そのヒーターチップの温度（Ｔｈ）および冷却水の温度（５０℃）により、熱抵抗値（ＨＲ）を、ＨＲ＝（Ｔｈ−５０）／１００（℃／Ｗ）から算出した。ここで、ヒーターチップ温度（Ｔｈ）はあらかじめヒーターチップのＴＣＲ（Ｔｅｍｐｅｒａｔｕｒｅ Ｃｏｅｆｆｉｃｉｅｎｔ ｏｆ Ｒｅｓｉｓｔａｎｃｅ）を測定しておき、発熱前後のヒーターチップの抵抗値の差（ΔＲ）を求めることによって、Ｔｈ=ΔＲ／ＴＣＲ＋Ｔｒ（℃）から算出した（Ｔｒは室温）。   The measurement of the thermal resistance value is performed by circulating cooling water having a water temperature of 50 ° C. in the internal space 31b of the cooling sink 31 and maintaining the outer surface of the cooling fin 31d at a constant temperature with 100 W of power to the heater chip. To generate heat. After the temperature of the heater chip becomes constant, the thermal resistance value (HR) is determined as HR = (Th−50) / 100 (° C.) according to the temperature (Th) of the heater chip and the temperature of cooling water (50 ° C.). / W). Here, the heater chip temperature (Th) is obtained by measuring the TCR (Temperature Coefficient of Resistance) of the heater chip in advance and obtaining the difference (ΔR) in the resistance value of the heater chip before and after the heat generation, thereby obtaining Th = ΔR / TCR + Tr Calculated from (° C.) (Tr is room temperature).

従来例として、前記パワーモジュールと同じヒーターチップ、絶縁板１１、回路板１２、金属板１３および冷却シンク部３１を採用するとともに、金属板１３と冷却シンク部３１との間に、縦、横および厚さがそれぞれ７０ｍｍ、７０ｍｍおよび３ｍｍとされたＣｕＭｏ合金からなる放熱板を配設した構成を採用した。なお、該従来例の構成は、まず、回路板１２および金属板１３と絶縁板１１とをＡｌ−Ｓｉろう箔を用いて真空ろう付けした後に、Ｐｂ５０％Ｓｎはんだ材料により、ヒーターチップと回路板１２とを接合するとともに、前記放熱板と金属板１３とを接合した。さらに、厚さが約０．１５ｍｍとされたシリコーングリース層を介して、前記放熱板と冷却シンク部３１とを接着させた。なお、前記実施例および比較例と全く同様にして、回路板１２等の各表面にＮｉメッキ層も形成した。   As a conventional example, the same heater chip as the power module, the insulating plate 11, the circuit board 12, the metal plate 13 and the cooling sink part 31 are adopted, and the vertical, horizontal and horizontal between the metal plate 13 and the cooling sink part 31 are adopted. A configuration in which a heat sink made of a CuMo alloy having thicknesses of 70 mm, 70 mm, and 3 mm, respectively, was provided. The configuration of the conventional example is that the circuit board 12, the metal plate 13, and the insulating plate 11 are first vacuum brazed using an Al—Si brazing foil, and then the heater chip and the circuit board are made of Pb50% Sn solder material. 12 and the heat radiating plate and the metal plate 13 were joined. Further, the heat radiating plate and the cooling sink portion 31 were bonded through a silicone grease layer having a thickness of about 0.15 mm. Note that a Ni plating layer was also formed on each surface of the circuit board 12 and the like in exactly the same manner as in the examples and comparative examples.

結果、従来例の初期熱抵抗値は０．７２（℃／Ｗ）であるのに対し、実施例の初期熱抵抗値は０．２８（℃／Ｗ）〜０．３０（℃／Ｗ）であり、従来例と比べて半分より小さくできることが確認された。また、図２に示すように、前記比較例では、前記熱サイクル寿命が３０００以下であるのに対し、実施例では３５００より大きいことが確認された。
以上より、回路板１２の厚さ（ａ）が０．２ｍｍ以上０．８ｍｍ以下、金属板１３の厚さ（ｂ）が０．６ｍｍ以上１．５ｍｍ以下で、ａ／ｂ＜１とされたパワーモジュール１０では、各構成要素１２等同士の接合信頼性を低減させることなく、積層方向におけるトータル熱抵抗を低減させることができることが確認された。 As a result, the initial thermal resistance value of the conventional example is 0.72 (° C / W), whereas the initial thermal resistance value of the example is 0.28 (° C / W) to 0.30 (° C / W). It was confirmed that it can be smaller than half compared with the conventional example. Further, as shown in FIG. 2, it was confirmed that the thermal cycle life was 3000 or less in the comparative example, whereas it was larger than 3500 in the example.
From the above, the thickness (a) of the circuit board 12 is 0.2 mm or more and 0.8 mm or less, and the thickness (b) of the metal board 13 is 0.6 mm or more and 1.5 mm or less, and a / b <1 . In the power module 10, it was confirmed that the total thermal resistance in the stacking direction can be reduced without reducing the bonding reliability between the components 12 and the like.

なお、本発明の技術的範囲は前記実施の形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。例えば、前記冷却シンク部３１に、絶縁板１１の熱膨張係数と冷却シンク部３１の本体部３１ａの熱膨張係数との中間の熱膨張係数を有するＣｕ等からなる応力緩衝部材を備えさせ、該応力緩衝部材を、金属板１３と冷却シンク部３１との間に配設するようにしてもよく、また、この応力緩衝部材に代えて、純度が９９％以上の純Ａｌからなるひずみ吸収部材を配設するようにしてもよい。
また、金属板１３と冷却シンク部３１の本体部３１ａとをろう付けにより接合してもよい。 The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, the cooling sink part 31 is provided with a stress buffer member made of Cu or the like having a thermal expansion coefficient intermediate between the thermal expansion coefficient of the insulating plate 11 and the thermal expansion coefficient of the main body part 31a of the cooling sink part 31, A stress buffering member may be disposed between the metal plate 13 and the cooling sink 31. Instead of the stress buffering member, a strain absorbing member made of pure Al having a purity of 99% or more is used. It may be arranged.
Moreover, you may join the metal plate 13 and the main-body part 31a of the cooling sink part 31 by brazing.

各構成要素同士の接合信頼性を低減させることなく、積層方向におけるトータル熱抵抗を低減させることが可能になる絶縁回路基板および冷却シンク部付き絶縁回路基板を提供する。   Provided are an insulating circuit board and an insulating circuit board with a cooling sink that can reduce the total thermal resistance in the stacking direction without reducing the bonding reliability between the components.

この発明の一実施形態に係る絶縁回路基板を用いたパワーモジュールを示す全体図である。1 is an overall view showing a power module using an insulated circuit board according to an embodiment of the present invention. この発明の一実施形態に係る絶縁回路基板を用いたパワーモジュールの作用効果を検証した試験結果を示す図である。It is a figure which shows the test result which verified the effect of the power module using the insulated circuit board concerning one Embodiment of this invention.

符号の説明Explanation of symbols

１０ パワーモジュール
１０ａ 冷却シンク部付き絶縁回路基板
１１ 絶縁板
１２ 回路板
１３ 金属板
１４ 第１はんだ層
１５ 第２はんだ層
２０ 絶縁回路基板
３０ 半導体チップ
３１ 冷却シンク部
DESCRIPTION OF SYMBOLS 10 Power module 10a Insulated circuit board with cooling sink part 11 Insulating board 12 Circuit board 13 Metal plate 14 1st solder layer 15 2nd solder layer 20 Insulated circuit board 30 Semiconductor chip 31 Cooling sink part

Claims (1)

ＡｌＮからなる絶縁板と、該絶縁板の一方の表面に接合された回路板と、前記絶縁板の他方の表面に接合された金属板とを備えた絶縁回路基板と、前記金属板の下面に接合された冷却シンク部とを備えた冷却シンク部付き絶縁回路基板であって、
前記回路板の表面に第１はんだ層を介して半導体チップが接合される構成とされ、
前記冷却シンク部は、純Ａｌ若しくはＡｌ合金により形成され、冷媒が循環する内部空間を有し、
前記金属板と前記冷却シンク部とは、厚さ０．０５ｍｍ〜０．５ｍｍからなるＳｎを主成分とする第２はんだ層を介して接合されており、
前記回路板および金属板は、純Ａｌ若しくはＡｌ合金により形成されるとともに、前記回路板の厚さ（ａ）が０．２ｍｍ以上０．８ｍｍ以下、前記金属板の厚さ（ｂ）が０．６ｍｍ以上１．５ｍｍ以下で、ａ／ｂ＜１であることを特徴とする冷却シンク部付き絶縁回路基板。 An insulating circuit board comprising an insulating plate made of AlN, a circuit board bonded to one surface of the insulating plate, a metal plate bonded to the other surface of the insulating plate, and a lower surface of the metal plate An insulated circuit board with a cooling sink portion comprising a bonded cooling sink portion,
The semiconductor chip is joined to the surface of the circuit board via a first solder layer,
The cooling sink part is formed of pure Al or Al alloy, and has an internal space in which the refrigerant circulates.
The metal plate and the cooling sink portion are joined via a second solder layer mainly composed of Sn having a thickness of 0.05 mm to 0.5 mm,
The circuit board and the metal plate are formed of pure Al or an Al alloy, the thickness (a) of the circuit board is 0.2 mm or more and 0.8 mm or less, and the thickness (b) of the metal plate is 0. An insulating circuit board with a cooling sink portion, wherein a / b <1 is 6 mm or more and 1.5 mm or less.
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US11/720,658 US20090229864A1 (en) 2005-09-15 2006-09-15 Insulating circuit board and insulating circuit board having cooling sink
EP06798058A EP1926142A1 (en) 2005-09-15 2006-09-15 Insulating circuit board and insulating circuit board provided with cooling sink section
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