JP4746167B2 - Board loading / unloading method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide technique for horizontally retaining a substrate. SOLUTION: In a vacuum device 13, first and second adsorption members 26a and 26b having electrodes are provided at specific intervals in a vacuum tank 20. A plate-shaped substrate 5 is carried into the vacuum tank 20, an edge is horizontally brought into contact with the first and second adsorption members 26a and 26b, and a voltage is applied to the electrode, thus adsorbing the edge of the substrate 5 onto the surface of the electrostatic adsorption device 13. The substrate 5 is set horizontally, thus reducing the clearance between the substrates 5, and the height of the vacuum device 13.

Description

【００１０】
上記最大たわみ量ωmax(ｍｍ)は、
ωmax ＝ ５×ｗ×Ｌ⁴／(３８４×Ｅ×Ｉ)
で算出した。
【００１１】
上記表１から分かるように、例えば、青板ガラス基板１０５が１００×１００×０．０７（ｃｍ）の場合(０，０７ｃｍは厚み)、最大たわみ量ωmaxは約１４．６ｍｍになることが解る。
【００１２】
図７の符号１１３は、真空槽１２０の相対する二壁面に複数個の突起１２６a、１２６bが設けられた仕込取出室を示している。
【００１３】
この仕込取出室１１３の突起１２６a、１２６bに青板ガラスから成る基板１０５を掛け亘す場合には、上記最大たわみ量ωmaxに加え、基板搬送ロボットのピックアップ部の厚みや、搬送ストロークを考慮すると、突起１２６a、１２６bの上下方向の間隔は約３０ｍｍ以上必要となる。
【００１４】
この為、真空槽１２０の垂直方向の内形寸法は、１ロット２５枚の基板を真空槽１２０内に配置する場合には、３０ｍｍ×２５枚として、７５０ｍｍ以上必要となる。
【００１５】
近年では基板の更なる大口径化と薄型化が進んでいるため、最大たわみ量ωmaxは増々増加し、真空槽１２０の高さも増々高くなってしまう。
【００１６】
【発明が解決しようとする課題】
本発明は上記従来技術の不都合を解決するために創作されたものであり、その目的は、静電吸着力により基板を水平に保持する技術を提供することにある。
【００１７】
【課題を解決するための手段】
上記課題を解決するために、請求項１記載の発明は、四角形のガラス基板を一枚吸着する吸着装置が複数個内部に配置された真空槽と、前記真空槽の外部に配置された電源とを有する薄型ディスプレイ製造用の真空装置であって、前記吸着装置は第１、第２の吸着部材を有し、前記第１、第２の吸着部材は、少なくとも一表面が平らに成形された絶縁体を有し、前記一表面は、該一表面上に、前記ガラス基板の平行な二辺の縁部分が乗せられるように、所定間隔を開けて同じ高さで平行に水平配置され、複数の前記吸着装置は、前記真空槽内で鉛直方向に一定間隔で配置され、前記絶縁体には、複数の電極が一列に配置され、前記電極には、正電圧と負電圧が交互に印加されるように構成され、前記電極の印加電圧の極性は反転できるように構成され、一枚の前記ガラス基板が配置された前記吸着装置の前記電極に対する前記印加電圧を反転させるときに、他の前記ガラス基板が配置された他の前記吸着装置の前記電極に対する印加電圧は反転させないようにできる真空装置を用い、前記真空装置の前記吸着装置上に四角形の前記ガラス基板を搬出入する基板搬出入方法であって、前記吸着装置上に自重によって撓む前記ガラス基板を配置する際には、基板搬送ロボットのアームの先端に設けられたピックアップ部上に水平な状態で乗せた前記ガラス基板を前記吸着装置上に静止させ、前記ピックアップ部を降下させ、前記ガラス基板が前記第１、第２の吸着部材に接触した状態で前記電極に電圧を印加して前記ガラス基板を水平状態で吸着し、前記ガラス基板の縁部分を保持した後、前記ピックアップ部を前記ガラス基板から離して移動させ、前記ガラス基板を前記静電吸着装置上から移動させる際には、前記ピックアップ部を前記吸着装置上に配置された前記ガラス基板の裏面に当接させ、前記ピックアップ部が当接されていない前記ガラス基板を保持する前記静電吸着装置の電極には前記正電圧と前記負電圧を印加した状態で、前記ピックアップ部が当接された前記ガラス基板を保持する前記静電吸着装置の電極への印加電圧は極性を反転させ、次いで、前記ピックアップ部を上方に移動させて前記ガラス基板を前記ピックアップ部上に移し替え、前記ピックアップ部を引き抜く基板搬出入方法である。
【００１８】
本発明の静電吸着装置、真空装置、及び真空処理装置は上記のように構成されており、吸着部材内部の電極に電圧を印加することで、静電吸着力が発生するようになっている。
【００１９】
第１、第２の吸着部材の間は所定間隔を開けて平行に配置されており、一表面上には基板の縁部分だけが乗るようになっている。従って基板の縁部分から内側は露出した状態になるので、その部分に基板搬送ロボットのアーム先端を当接させ、基板を搬送することが可能になる。
【００２０】
第１、第２の吸着部材に水平に基板を亘し、第１、第２の吸着部材に静電吸着力を発生させると、基板は撓まずに第１、第２の吸着部材に保持されている。
【００２１】
複数の静電吸着装置を真空槽内に互いに平行に配置し、各静電吸着装置に基板を１枚ずつ保持させると、静電吸着力を用いない場合に比べて多数の基板を保持することができる。
【００２２】
本発明の第１、第２の吸着部材は、互いに分離していてもよいし、“コ”字形に結ばれていてもよい。
【００２３】
また、第１、第２の吸着部材は、真空槽の壁面に固定されていてもよいし、他の部材によって支持されていてもよい。
【００２４】
【発明の実施の形態】
図１の符号２は、本発明の真空処理装置の一実施例を示している。
この真空処理装置２は、スパッタリング装置であり、スパッタチャンバ１１と、搬送室１２と、本発明の真空装置の一例の仕込取出室１３とを有している。仕込取出室１３の内部正面図を図２(ａ)に示す。
【００２５】
図２(ａ)を参照し、仕込取出室１３は、真空槽２０と、該真空槽２０内に配置された複数の静電吸着装置２６とを有している。図２(ａ)では、１０個の静電吸着装置２６が示されている。各静電吸着装置２６は、２個一組になっている第１、第２の吸着部材２６a、２６bによって構成されている。
【００２６】
仕込取出室１３の真空槽２０は、４個の壁面を有しており、各壁面は鉛直に配置され、その２個ずつが平行に相対向している。
【００２７】
第１、第２の吸着部材２６a、２６bは、細長い形状をしており、１個の静電吸着装置２６を構成する第１、第２の吸着部材２６a、２６bは、真空槽２０の対向する二壁面２１、２２に、同じ高さで水平に取り付けられている。
【００２８】
第１、第２の吸着部材２６a、２６bは、鉛直方向に一定間隔を開けて配置されており、従って、各吸着装置２６は、鉛直方向に所定ピッチで列設されている。
【００２９】
１個の静電吸着装置２６を図３に示す。
第１、第２の吸着部材２６a、２６bは棒状に成形されたアルミナ材から成る絶縁体３２a、３２bを有している。
【００３０】
第１、第２の吸着部材２６a、２６bの絶縁体３２a、３２b内には、タングステン等の導電性の材料から成る複数の電極３１a₁〜３１a₆、３１b₁〜３１b₆がそれぞれ配置されている。
【００３１】
図２(ｂ)は、静電吸着装置２６を電極３１a₁〜３１a₆、３１b₁〜３１b₆を通る面で截断した場合の断面図である。
【００３２】
絶縁体３２a、３２bの上部は平らに成形されており載置面(電極部材の一表面)３３a、３３bが形成されている。１個の静電吸着装置２６を構成する第１、第２の吸着部材２６a、２６bの載置面３３a、３３bは、同じ高さで且つ水平に配置されている。
【００３３】
各電極３１a₁〜３１a₆、３１b₁〜３１b₆は板状になっており、その表面は、載置面３３a、３３bと平行になっており、各電極３１a₁〜３１a₆、３１b₁〜３１b₆は、絶縁体３２a、３２b内で長手方向に一列に配置されている。
【００３４】
真空処理装置２の外部には、直流電圧源３５と、リレー回路３６、３７が配置されている。
【００３５】
直流電圧源３５は、内部電圧源３８、３９により、二種類以上の異なる電圧を出力できるように構成されており、各静電吸着装置２６の第１、第２の静電吸着部材２６a、２６b内に配置された電極３１a₁〜３１a₆、３１b₁〜３１b₆は、それぞれリレー回路３６、３７を介して、直流電圧源５に接続されている。
【００３６】
図３に示した静電吸着装置２６では、各電極３１a₁〜３１a₆、３１b₁〜３１b₆は、直流電圧源５内の正電圧の出力部分３８と負電圧の出力部分３９に交互に接続されている。従って、各電極３１a₁〜３１a₆、３１b₁〜３１b₆には、正電圧と負電圧が交互に印加されるようになっている。
【００３７】
図１の符号２３は、仕切を示しており、仕込取出室１３は、この仕切２３を介して搬送室１２に接続されている。スパッタチャンバ１１と搬送室１２と仕込取出室１３には、それぞれ真空排気系が接続されており、仕切２３を閉じ、搬送室１２の内部を仕込取出室１３の内部から遮断した状態で、搬送室１２及びスパッタチャンバ１１内を予め真空排気しておく。
【００３８】
この状態から基板を真空装置内に搬入する手順を説明すると、真空処理装置２の外部には、図１に示すように基板搬送ロボット４１が配置されており、そのアーム４２先端のピックアップ部４３上にガラス製の基板を水平な状態で乗せると共に仕込取出室１３の扉を開け、仕込取出室１３内部を大気に開放し、基板搬送ロボット４１の駆動部４４の動作により、アーム４２を動かし、基板を仕込取出室１３内の静電吸着装置２６の間に挿入する。
【００３９】
次いで、基板裏面の高さが載置面３３a、３３bの高さと一致するまでピックアップ部４３を降下させると、水平な基板は、ピックアップ部４３に乗せられた状態で静電吸着装置２６に接触する。
【００４０】
図４(ａ)の符号５は、その状態の基板(ここでは１００×１００×０．０７ｃｍのガラス基板が用いられている。)を示しており、該基板５の相対する２辺は、図４(ｂ)に示すように、縁から１０ｍｍの長さだけ静電吸着装置２６表面と接触している。
【００４１】
この状態でリレー回路３６、３７を動作させ、基板５が乗せられた静電吸着装置２６の各電極３１a₁〜３１a₆、３１b₁〜３１b₆に、それぞれ正負の電圧を印加すると、１個の静電吸着部材２６a、２６b内の正電圧が印加された電極３１a₁、３１a₃、３１a₅、３１b₁、３１b₃、３１b₅と、負電圧が印加された電極３１a₂、３１a₄、３１a₅、３１b₂、３１b₄、３１b₅との間に静電界が形成され、基板５が載置面３３a、３３b上に静電吸着される。
【００４２】
この状態では、基板５の相対する縁部分が載置面３１に押しつけられ、基板５は、その縁部分で静電吸着装置２６に保持されている。次いで、アーム４２を降下させ、ピックアップ部４３を基板５の裏面から離すと、基板５は水平な状態で、第１、第２の吸着部材２６a、２６b上に掛け渡された状態になる。即ち、基板５は静電吸着装置２６上に水平な状態で保持されている。
【００４３】
この状態では、基板５の表面及び裏面は、静電吸着装置２６上に位置する部分を除き、露出している。
【００４４】
次いで、ピックアック部４３を仕込取出室１３から抜き出し、他の基板を乗せ、仕込取出室１３内に搬入し、空の静電吸着装置２６上に位置させ、基板を静電吸着装置２６の載置面３３a、３３bに接触させ、静電吸着力を発生させて基板を水平に保持させた後、ピックアップ部４３を基板の裏面から離し、仕込取出室１３から抜き出す。
【００４５】
リレー回路３６、３７は、複数の静電吸着装置２６のうち、所望の静電吸着装置２６だけを直流電圧源５に接続したり、直流電圧源５への接続を切り離せるようになっている。
【００４６】
従って、以上のように、空の静電吸着装置２６には電圧を印加しない状態にしておき、ピックアップ部４３によって支持された基板５が乗せられた静電吸着装置２６に電圧を印加し、その状態を保持させると、図５に示すように、各静電吸着装置２６上に基板５が１枚ずつ乗せられ、仕込取出室１３内は水平な基板５で満載される。
【００４７】
このように複数の基板５を互いに平行に配置する場合、基板５間の距離は、ピックアップ部４３を挿入でき、且つある程度上下方向に移動させられる距離が必要である。
【００４８】
図５の符号Ｌ₁は、静電吸着装置２６間の間隔を示しており、この真空処理装置２では、Ｌ₁は１５ｍｍになっている。各基板５は水平であるから、基板間の距離は静電吸着装置２６間の間隔Ｌ₁に等しい。最上段の静電吸着装置２６の載置面３３a、３３bから真空槽２０の天井までの距離と、最下段の静電吸着装置２６の載置面３３a、３３bから底壁面までの距離もＬ₁になっている。
【００４９】
仕込取出室１３内が基板５で満載されたら、大気との間の扉を閉じ、仕込取出室１３内を真空排気し、仕込取出室１３と搬送室１２との間の仕切２３を開ける。
【００５０】
搬送室１２内には、基板搬送ロボット５１が配置されており、その駆動部５４を動作させ、基板搬送ロボット５１のアーム５２を動かし、その先端のピックアップ部５３を仕込取出室１３内の基板５間に挿入する。
【００５１】
図６は、最下段に位置する基板５の裏面にピックアップ部５３が当接された状態を示している。
【００５２】
次いで、ピックアップ部５３を裏面に当接させた基板５が保持されている静電吸着装置２６のみ、印加電圧の極性を反転させる。即ち、その静電吸着装置２６の第１、第２の吸着部材２６a、２６b中の正電圧が印加されていた電極３１a₁、３１a₃、３１a₅、３１b₁、３１b₃、３１b₅には負電圧を印加し、負電圧が印加されていた電極３１a₂、３１a₄、３１a₆、３１b₂、３１b₄、３１b₆には正電圧を印加する。
【００５３】
このように、静電吸着時とは反転した電圧を所定時間印加し、第１、第２の吸着部材２６a、２６bと基板５との間に残留していた残留吸着力を消滅させた後、電圧印加を停止した状態で、ピックアップ部５３を上方に移動させると、基板５は静かに持ち上げられ、ピックアップ部５３上に移し替えられる。その後、各電極３１a₁〜３１a₆、３１b₁〜３１b₆をグラウンド電位に接続する。
【００５４】
この場合、基板５が載置されている状態の静電吸着装置２６には電圧を印加したままにし、静電吸着力によって基板５を保持させておく。
【００５５】
ピックアップ部５３上に基板５が移し替えられたら、ピックアップ部５３を基板５と共に仕込取出室１３内から抜き出し、スパッタチャンバ１１と搬送室１２との間の仕切２４を開け、スパッタチャンバ１１内に搬入し、基板５をスパッタチャンバ１１内に配置する。
【００５６】
ピックアップ部５３をスパッタチャンバ１１から抜き出した後、仕切２４を閉じ、スパッタチャンバ１１内で基板５の表面に薄膜を形成する。
【００５７】
薄膜形成終了後、仕切２４を開け、薄膜が形成された基板５をピックアップ部５３上に乗せ、仕込取出室１３内に搬入し、空の静電吸着装置２６上に静止させる。
【００５８】
次いで、基板５の裏面の高さと静電吸着装置２６の載置面３３a、３３bの高さが一致するまでピックアップ部５３を降下させ、基板５の裏面を静電吸着装置２６の載置面３３a、３３bに接触させた状態で、その静電吸着装置２６に電圧を印加すると、薄膜が形成された基板５は静電吸着され、静電吸着装置２６に水平に保持される。
【００５９】
次いで、ピックアップ部５３を降下させ基板５の下から抜き出した後、未成膜の基板５の裏面下に挿入し、上記と同様の手順によって基板５をピックアップ部５３上に乗せ、スパッタチャンバ１１内に搬入し、薄膜形成を行う。
【００６０】
以上のような手順により、仕込取出室１３内に配置された基板５全部に薄膜が形成されると、仕込取出室１３と搬送室１２との間の仕切２３を閉じ、仕込取出室１３の扉を開け、内部を大気に開放する。
【００６１】
次いで、真空装置２の外部に配置された基板搬送ロボット４１により、１枚ずつ基板５を取り出すと、薄膜形成作業が終了する。この場合も、ロボット４１のピックアップ部４３を基板５裏面に当接させた後、その基板５が載置されている静電吸着装置２６への印加電圧の極性を反転させ、静電吸着力を消滅させた後、ピックアップ部４３を上方に移動させ、基板５を静電吸着装置２６上から静かに持ち上げる。
【００６２】
上記の操作を繰り返し、仕込取出室１３内から基板５を搬出し、未処理の基板を搬入し、処理を続行する。
【００６３】
以上説明したように、本発明の静電吸着装置、真空装置、及び真空処理装置は板状の基板の平行な二辺の縁部分を静電吸着することで基板を保持しているので、従来技術のような基板の自重によるたわみが少ない。従って、基板を複数枚平行に配置する場合、ピックアップ部の厚み及び上下方向の移動距離だけ基板間の距離を開ければよい。表１に示した値と異なり、本発明では基板間は１５ｍｍだけ開ければよい。従って、搬出入室１３の高さも、基板を２５枚配置する場合でも、１５ｍｍ×２５枚の４００ｍｍで済む。
【００６４】
その結果、静電吸着せずに自由支持させる従来技術の場合に比較すると、高さを３５０ｍｍも低くすることができる。また、撓みが無いため、ピックアップ部の上下方向の移動距離も短縮させることが可能となる。
【００６５】
さらには、基板を撓ませずに保持した状態で複数枚配置できることにより、基板搬送位置精度の向上も期待される。
【００６６】
なお、上記の真空処理装置２はスパッタリング装置であったが、本発明の真空処理装置はこれに限らず、ＣＶＤ装置、エッチング装置、イオン注入装置なども含まれる。
【００６７】
また、上記のように枚葉式の装置に限定されるものではなく、基板を搬送しながら成膜を行うインライン式の装置についても実施可能である。
【００６８】
また、上記実施例は基板５を水平状態にして真空装置(仕込取出室１３)に配置した場合を説明したが、本発明の静電吸着装置、真空装置、及び真空処理装置は、基板を垂直方向に載置する場合も含まれる。基板を垂直に配置する場合、本発明によって静電吸着しない場合、水平に配置する場合よりも自重による撓みが大きくなり、基板が破損するおそれもあるため、本発明は特に有効である。
【００６９】
なお、上記(第１、第２の)吸着装置２６a、２６bでは、絶縁体３２a、３２b内に電極３１a₁〜３１a₆、３１b₁〜３１b₆が埋め込まれていたが、電極３１a₁〜３１a₆、３１b₁〜３１b₆の載置面３３a、３３b側が露出していてもよい。その場合、電極３１a₁〜３１a₆、３１b₁〜３１b₆の表面は載置面３３a、３３bと同じ高さであっても、同じ高さでなくてもよい。
【００７０】
電極３１a₁〜３１a₆、３１b₁〜３１b₆が基板５の裏面に接触する場合、電極３１a₁〜３１a₆、３１b₁〜３１b₆の表面には保護膜を形成しておくとよい。
【００７１】
【発明の効果】
基板の自重による撓みや反りを無くすことができる。
基板の縁部分よりも内側は静電吸着装置に接触しないので、傷が付いたりダストが発生することはない。
撓みが無いため、ピックアップ部の上下方向の移動距離も短縮させることが可能となる。真空装置の高さを低くすることが出来る。
基板を撓ませずに保持した状態で複数枚配置できることにより、基板搬送位置精度の向上も期待される。
【図面の簡単な説明】
【図１】本発明の一例の真空処理装置
【図２】(ａ)：本発明の真空装置を説明するための図(１)
(ｂ)：本発明の静電吸着装置を説明するための図(１)
【図３】本発明の静電吸着装置を説明するための図(２)
【図４】(ａ)：本発明の真空装置を説明するための図(２)
(ｂ)：本発明の静電吸着装置を説明するための図(３)
【図５】本発明の真空装置に基板が満載された状態を説明するための図
【図６】本発明の真空装置内からの基板の搬出を説明するための図
【図７】従来技術の真空装置の例
【図８】たわみ量の計算方法を説明するための図
【符号の説明】
２……真空処理装置
５……基板
１３……真空装置(仕込取出室)
２６……静電吸着装置
２６a、２６b……第１、第２の吸着部材
３１a₁〜３１a₆、３１b₁〜３１b₆……電極
３２a、３２b……絶縁体
３３a、３３b……載置面(一表面)[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electrostatic attraction apparatus configured to electrostatically attract an object to be held such as a substrate, and a vacuum apparatus and a vacuum processing apparatus using the electrostatic attraction apparatus.
[0002]
[Prior art]
In recent years, LCDs and PDP substrates typified by FPDs have been actively manufactured for thin display applications for personal computers. The substrate is mainly made of alkali-free glass or lead-free glass. However, with the aim of mass production of large and thin displays, glass substrates are becoming larger and thinner in manufacturing apparatuses. Along with this, clamping techniques such as vacuum chucks and electrostatic chucks are applied to the handling of substrates in the apparatus.
[0003]
In the loading / unloading chamber in which the substrate is temporarily stored in the apparatus, it is necessary to minimize the occurrence of damage and scratches on the substrate. In addition, in order to cause the substrate transfer robot to lift the substrate disposed in the preparation take-out chamber, it is necessary that nothing is in contact with the central portion of the substrate.
[0004]
Therefore, in the prior art, in order to minimize the contact area between the substrate and other members, there is a method of placing the substrate by freely supporting both ends of the substrate (in the range of about 10 to 30 mm from the end of the substrate). It was the subject.
[0005]
However, as the substrate has become larger and thinner in recent years, the deflection due to the weight of the substrate has increased. Therefore, in addition to the thickness of the pickup portion of the substrate transfer robot, the substrate must be separated by the distance of the deflection. In other words, the pitch between the substrates in the loading / unloading chamber is large.
[0006]
For this reason, if a large number of substrates are arranged in the preparation / extraction chamber, the preparation / extraction chamber must be enlarged.
[0007]
In addition, when the substrate is lifted by the pick-up unit of the transfer robot, the vertical movement distance increases by the amount of bending of the substrate, which causes various problems such as a review of the transfer capability of the substrate transfer robot. It was.
[0008]
Table 1 below shows various blue plate glass substrates 105 of different sizes and thicknesses when the substrate 105 is horizontally and freely supported at positions S and T 10 mm inside from the opposite edge portions as shown in FIG. This is a result of calculating the maximum deflection amount ωmax of the substrate 105.
[0009]
[Table 1]

[0010]
The maximum deflection ωmax (mm) is
ωmax = 5 × w × L ⁴ / (384 × E × I)
Calculated with
[0011]
As can be seen from Table 1, for example, when the soda glass substrate 105 is 100 × 100 × 0.07 (cm) (the thickness is 0.07 cm), the maximum deflection amount ωmax is about 14.6 mm.
[0012]
Reference numeral 113 in FIG. 7 indicates a preparation / extraction chamber in which a plurality of protrusions 126 a and 126 b are provided on two opposing wall surfaces of the vacuum chamber 120.
[0013]
When the substrate 105 made of soda-lime glass is stretched over the protrusions 126a and 126b of the charging / unloading chamber 113, in consideration of the thickness of the pickup section of the substrate transfer robot and the transfer stroke in addition to the maximum deflection amount ωmax, the protrusions The interval in the vertical direction of 126a and 126b is required to be about 30 mm or more.
[0014]
For this reason, the internal dimensions in the vertical direction of the vacuum chamber 120 are required to be 750 mm or more as 30 mm × 25 when 25 substrates per lot are arranged in the vacuum chamber 120.
[0015]
In recent years, since the substrate is further increased in diameter and thinned, the maximum deflection amount ωmax is increased and the height of the vacuum chamber 120 is also increased.
[0016]
[Problems to be solved by the invention]
The present invention was created to solve the above-described disadvantages of the prior art, and an object of the present invention is to provide a technique for holding a substrate horizontally by electrostatic attraction force.
[0017]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the invention according to claim 1 includes a vacuum chamber in which a plurality of suction devices for adsorbing a single square glass substrate are disposed, and a power source disposed outside the vacuum chamber. A vacuum device for manufacturing a thin display, wherein the suction device has first and second suction members, and the first and second suction members are insulated with at least one surface formed flat. The one surface is horizontally arranged in parallel at the same height at a predetermined interval so that two parallel edge portions of the glass substrate are placed on the one surface. The adsorption device is arranged at regular intervals in the vertical direction in the vacuum chamber, and a plurality of electrodes are arranged in a row on the insulator, and positive and negative voltages are alternately applied to the electrodes. The polarity of the voltage applied to the electrode can be reversed When the applied voltage to the electrode of the adsorption device in which one glass substrate is arranged is reversed, the applied voltage to the electrode of another adsorption device in which another glass substrate is arranged is using a vacuum device can be prevented by inverting the a substrate loading and unloading method for loading and unloading the glass substrate of the rectangle on the suction device of the true SoraSo location, the glass substrate which bends under its own weight on the suction device the in placing causes the stationary the glass substrate carrying in a horizontal state on the pickup portion provided at the tip of the arm of the base plate conveyance robot on the suction device, is lowered the pickup, the glass A voltage is applied to the electrodes while the substrate is in contact with the first and second adsorption members to adsorb the glass substrate in a horizontal state and hold the edge portion of the glass substrate. When the pickup unit is moved away from the glass substrate and the glass substrate is moved from above the electrostatic adsorption device, the pickup unit is brought into contact with the back surface of the glass substrate disposed on the adsorption device. The glass with which the pickup unit is in contact with the electrode of the electrostatic chuck that holds the glass substrate that is not in contact with the pickup unit while the positive voltage and the negative voltage are applied. The voltage applied to the electrode of the electrostatic chuck that holds the substrate is reversed in polarity, then the pickup unit is moved upward to move the glass substrate onto the pickup unit, and the pickup unit is pulled out It is a loading / unloading method.
[0018]
The electrostatic attraction apparatus, the vacuum apparatus, and the vacuum processing apparatus of the present invention are configured as described above, and an electrostatic attraction force is generated by applying a voltage to the electrode inside the attraction member. .
[0019]
The first and second adsorbing members are arranged in parallel at a predetermined interval, and only the edge portion of the substrate is placed on one surface. Accordingly, since the inner side is exposed from the edge portion of the substrate, the tip of the arm of the substrate transfer robot is brought into contact with that portion, and the substrate can be transferred.
[0020]
When the substrate is horizontally placed on the first and second attracting members and the electrostatic attracting force is generated on the first and second attracting members, the substrate is held by the first and second attracting members without being bent. ing.
[0021]
When multiple electrostatic chucks are placed in parallel in the vacuum chamber and each electrostatic chuck is held one by one, a larger number of substrates can be held than when no electrostatic chucking force is used. Can do.
[0022]
The first and second adsorbing members of the present invention may be separated from each other or may be connected in a “U” shape.
[0023]
Moreover, the 1st, 2nd adsorption | suction member may be fixed to the wall surface of a vacuum chamber, and may be supported by the other member.
[0024]
DETAILED DESCRIPTION OF THE INVENTION
Reference numeral 2 in FIG. 1 shows an embodiment of the vacuum processing apparatus of the present invention.
The vacuum processing apparatus 2 is a sputtering apparatus, and includes a sputtering chamber 11, a transfer chamber 12, and a preparation / extraction chamber 13 as an example of the vacuum apparatus of the present invention. An internal front view of the charging / unloading chamber 13 is shown in FIG.
[0025]
With reference to FIG. 2A, the preparation / extraction chamber 13 includes a vacuum chamber 20 and a plurality of electrostatic adsorption devices 26 arranged in the vacuum chamber 20. In FIG. 2A, ten electrostatic attracting devices 26 are shown. Each electrostatic adsorption device 26 is composed of a pair of first and second adsorption members 26a and 26b.
[0026]
The vacuum chamber 20 of the charging / unloading chamber 13 has four wall surfaces, each wall surface is arranged vertically, and two of them are opposed to each other in parallel.
[0027]
The first and second suction members 26 a and 26 b have an elongated shape, and the first and second suction members 26 a and 26 b constituting one electrostatic suction device 26 face the vacuum chamber 20. The two wall surfaces 21 and 22 are horizontally attached at the same height.
[0028]
The first and second suction members 26a and 26b are arranged at regular intervals in the vertical direction. Accordingly, the respective suction devices 26 are arranged at a predetermined pitch in the vertical direction.
[0029]
One electrostatic chuck 26 is shown in FIG.
The first and second adsorbing members 26a and 26b have insulators 32a and 32b made of an alumina material formed into a rod shape.
[0030]
First, second suction member 26a, 26b of the insulators 32a, Within 32b, a plurality of electrodes _{31a 1 ~31a 6, 31b 1 ~31b} 6 made of a conductive material such as tungsten is disposed, respectively .
[0031]
FIG. 2B is a cross-sectional view when the electrostatic chuck 26 is cut along a plane passing through the electrodes 31a ₁ to 31a ₆ and 31b _{1 to} 31b ₆ .
[0032]
Upper portions of the insulators 32a and 32b are formed flat, and mounting surfaces (one surface of electrode members) 33a and 33b are formed. The placement surfaces 33a and 33b of the first and second attracting members 26a and 26b constituting one electrostatic attracting device 26 are arranged at the same height and horizontally.
[0033]
Each electrode _{31a 1 ~31a 6, 31b 1 ~31b} 6 has become a plate shape, its surface is the mounting surface 33a, which is parallel to the 33b, the electrodes 31a ₁ ~31a _6, 31b ₁ ~31b ₆ are arranged in a row in the longitudinal direction in the insulators 32a and 32b.
[0034]
A DC voltage source 35 and relay circuits 36 and 37 are arranged outside the vacuum processing apparatus 2.
[0035]
The DC voltage source 35 is configured so that two or more different voltages can be output by the internal voltage sources 38 and 39, and the first and second electrostatic adsorption members 26 a and 26 b of each electrostatic adsorption device 26. electrodes 31a ₁ ~31a ₆ disposed within, 31b ₁ ~31b _6, respectively via the relay circuits 36 and 37 are connected to a DC voltage source 5.
[0036]
In the electrostatic attraction device 26 shown in FIG. 3, the electrodes 31 a _{1 to} 31 a ₆ and 31 b _{1 to} 31 b ₆ are alternately connected to a positive voltage output portion 38 and a negative voltage output portion 39 in the DC voltage source 5. Has been. Therefore, each electrode _{31a 1 ~31a 6, 31b 1 ~31b} 6, positive and negative voltages is adapted to be applied alternately.
[0037]
Reference numeral 23 in FIG. 1 denotes a partition, and the preparation / extraction chamber 13 is connected to the transfer chamber 12 through the partition 23. A vacuum exhaust system is connected to each of the sputter chamber 11, the transfer chamber 12, and the preparation / extraction chamber 13, the partition 23 is closed, and the transfer chamber 12 is shut off from the inside of the preparation / extraction chamber 13. 12 and the inside of the sputtering chamber 11 are evacuated in advance.
[0038]
The procedure for carrying the substrate into the vacuum apparatus from this state will be described. A substrate transfer robot 41 is arranged outside the vacuum processing apparatus 2 as shown in FIG. A glass substrate is placed in a horizontal state, the door of the loading / unloading chamber 13 is opened, the inside of the loading / unloading chamber 13 is opened to the atmosphere, and the arm 42 is moved by the operation of the drive unit 44 of the substrate transfer robot 41 to move the substrate. Is inserted between the electrostatic adsorption devices 26 in the preparation / extraction chamber 13.
[0039]
Next, when the pickup unit 43 is lowered until the height of the back surface of the substrate coincides with the height of the placement surfaces 33 a and 33 b, the horizontal substrate comes into contact with the electrostatic adsorption device 26 while being placed on the pickup unit 43. .
[0040]
Reference numeral 5 in FIG. 4A indicates a substrate in that state (here, a glass substrate of 100 × 100 × 0.07 cm is used), and two opposite sides of the substrate 5 are shown in FIG. As shown in FIG. 4B, the surface is in contact with the surface of the electrostatic adsorption device 26 by a length of 10 mm from the edge.
[0041]
It activates the relay circuit 36, 37 in this state, the respective electrodes _{31a 1 ~31a 6, 31b 1 ~31b} 6 of electrostatic chuck 26 on which the substrate 5 is entrained, when each is applied the positive and negative voltages, one Electrodes 31a ₁ , 31a ₃ , 31a ₅ , 31b ₁ , 31b ₃ , 31b ₅ to which positive voltages are applied in the electrostatic chuck members 26a, 26b, and electrodes 31a ₂ , 31a ₄ , 31a ₅ to which negative voltages are applied. , 31b ₂ , 31b ₄ , 31b ₅ are formed, and the substrate 5 is electrostatically adsorbed on the mounting surfaces 33a, 33b.
[0042]
In this state, the opposite edge portions of the substrate 5 are pressed against the placement surface 31, and the substrate 5 is held by the electrostatic chuck 26 at the edge portion. Next, when the arm 42 is lowered and the pickup unit 43 is separated from the back surface of the substrate 5, the substrate 5 is in a state of being stretched over the first and second suction members 26a and 26b in a horizontal state. That is, the substrate 5 is held in a horizontal state on the electrostatic adsorption device 26.
[0043]
In this state, the front surface and the back surface of the substrate 5 are exposed except for the portion located on the electrostatic adsorption device 26.
[0044]
Next, the pick-up unit 43 is extracted from the preparation / extraction chamber 13, another substrate is placed on the pick-up unit 43, loaded into the preparation / extraction chamber 13, placed on the empty electrostatic adsorption device 26, and the substrate is placed on the electrostatic adsorption device 26. After contacting the surfaces 33 a and 33 b and generating an electrostatic attraction force to hold the substrate horizontally, the pickup unit 43 is separated from the back surface of the substrate and extracted from the loading / unloading chamber 13.
[0045]
The relay circuits 36 and 37 can connect only a desired electrostatic adsorption device 26 to the DC voltage source 5 or disconnect the connection to the DC voltage source 5 among the plurality of electrostatic adsorption devices 26. .
[0046]
Therefore, as described above, a voltage is not applied to the empty electrostatic attraction device 26, and a voltage is applied to the electrostatic attraction device 26 on which the substrate 5 supported by the pickup unit 43 is placed. When the state is maintained, as shown in FIG. 5, one substrate 5 is placed on each electrostatic adsorption device 26, and the loading / unloading chamber 13 is filled with horizontal substrates 5.
[0047]
Thus, when the several board | substrate 5 is arrange | positioned mutually in parallel, the distance between the board | substrates 5 needs the distance which can insert the pick-up part 43 and can be moved to an up-down direction to some extent.
[0048]
A symbol L _{1 in} FIG. 5 indicates an interval between the electrostatic adsorption devices 26. In the vacuum processing device 2, L ₁ is 15 mm. Since each substrate 5 is horizontal, the distance between the substrates is equal to the interval L ₁ between the electrostatic adsorption devices 26. The distance from the mounting surfaces 33a and 33b of the uppermost electrostatic chuck 26 to the ceiling of the vacuum chamber 20, and the distance from the mounting surfaces 33a and 33b of the lowermost electrostatic chuck 26 to the bottom wall are also L _1. It has become.
[0049]
When the inside of the loading / unloading chamber 13 is filled with the substrate 5, the door to the atmosphere is closed, the inside of the loading / unloading chamber 13 is evacuated, and the partition 23 between the loading / unloading chamber 13 and the transfer chamber 12 is opened.
[0050]
A substrate transfer robot 51 is disposed in the transfer chamber 12, and the drive unit 54 is operated to move the arm 52 of the substrate transfer robot 51, and the pickup unit 53 at the tip of the substrate transfer robot 51 is moved to the substrate 5 in the loading / unloading chamber 13. Insert between.
[0051]
FIG. 6 shows a state in which the pickup unit 53 is in contact with the back surface of the substrate 5 located at the lowermost stage.
[0052]
Next, the polarity of the applied voltage is reversed only in the electrostatic attraction device 26 holding the substrate 5 with the pickup unit 53 in contact with the back surface. That is, the electrodes 31a ₁ , 31a ₃ , 31a ₅ , 31b ₁ , 31b ₃ , and 31b ₅ to which the positive voltage is applied in the first and second attracting members 26a and 26b of the electrostatic attraction device 26 are negative. A voltage is applied, and a positive voltage is applied to the electrodes 31a ₂ , 31a ₄ , 31a ₆ , 31b ₂ , 31b ₄ and 31b ₆ to which a negative voltage has been applied.
[0053]
As described above, after applying a voltage reversed from that at the time of electrostatic attraction for a predetermined time and extinguishing the residual attraction force remaining between the first and second attraction members 26a and 26b and the substrate 5, When the pickup unit 53 is moved upward in a state where the voltage application is stopped, the substrate 5 is gently lifted and transferred onto the pickup unit 53. Then, connect the respective electrodes _{31a 1 ~31a 6, 31b 1 ~31b} 6 to the ground potential.
[0054]
In this case, a voltage is kept applied to the electrostatic adsorption device 26 in a state where the substrate 5 is placed, and the substrate 5 is held by the electrostatic adsorption force.
[0055]
When the substrate 5 is transferred onto the pickup unit 53, the pickup unit 53 is taken out from the loading / unloading chamber 13 together with the substrate 5, the partition 24 between the sputtering chamber 11 and the transfer chamber 12 is opened, and the substrate 5 is loaded into the sputtering chamber 11. Then, the substrate 5 is placed in the sputtering chamber 11.
[0056]
After the pickup unit 53 is extracted from the sputtering chamber 11, the partition 24 is closed, and a thin film is formed on the surface of the substrate 5 in the sputtering chamber 11.
[0057]
After the formation of the thin film, the partition 24 is opened, the substrate 5 on which the thin film has been formed is placed on the pickup unit 53, carried into the loading / unloading chamber 13, and stopped on the empty electrostatic adsorption device 26.
[0058]
Next, the pickup unit 53 is lowered until the height of the back surface of the substrate 5 coincides with the height of the mounting surfaces 33a and 33b of the electrostatic chucking device 26, and the back surface of the substrate 5 is placed on the mounting surface 33a of the electrostatic chucking device 26. When the voltage is applied to the electrostatic adsorption device 26 in the state of being in contact with 33b, the substrate 5 on which the thin film is formed is electrostatically adsorbed and held horizontally by the electrostatic adsorption device 26.
[0059]
Next, after the pickup unit 53 is lowered and extracted from under the substrate 5, the substrate 5 is inserted under the back surface of the non-film-formed substrate 5, and the substrate 5 is placed on the pickup unit 53 by the same procedure as described above. Carry in and form a thin film.
[0060]
When the thin film is formed on all the substrates 5 arranged in the charging / unloading chamber 13 by the above procedure, the partition 23 between the charging / unloading chamber 13 and the transfer chamber 12 is closed, and the door of the charging / unloading chamber 13 is closed. To open the interior to the atmosphere.
[0061]
Next, when the substrates 5 are taken out one by one by the substrate transfer robot 41 arranged outside the vacuum apparatus 2, the thin film forming operation is completed. Also in this case, after the pickup unit 43 of the robot 41 is brought into contact with the back surface of the substrate 5, the polarity of the voltage applied to the electrostatic adsorption device 26 on which the substrate 5 is placed is reversed, and the electrostatic adsorption force is increased. After the disappearance, the pickup unit 43 is moved upward, and the substrate 5 is gently lifted from the electrostatic adsorption device 26.
[0062]
The above operation is repeated, the substrate 5 is unloaded from the preparation / unloading chamber 13, an unprocessed substrate is loaded, and the processing is continued.
[0063]
As described above, since the electrostatic adsorption device, the vacuum device, and the vacuum processing device of the present invention hold the substrate by electrostatically adsorbing the edge portions of two parallel sides of the plate-like substrate, There is little deflection due to the weight of the substrate like technology. Therefore, when a plurality of substrates are arranged in parallel, the distance between the substrates may be increased by the thickness of the pickup portion and the movement distance in the vertical direction. Unlike the values shown in Table 1, in the present invention, it is only necessary to open 15 mm between the substrates. Therefore, the height of the carry-in / out chamber 13 may be 15 mm × 25 400 mm even when 25 substrates are arranged.
[0064]
As a result, the height can be reduced by 350 mm as compared with the case of the prior art in which free support is performed without electrostatic attraction. Moreover, since there is no bending, it is possible to shorten the movement distance of the pickup unit in the vertical direction.
[0065]
Furthermore, since a plurality of substrates can be arranged in a state where the substrates are held without being bent, an improvement in substrate transfer position accuracy is also expected.
[0066]
The vacuum processing apparatus 2 is a sputtering apparatus, but the vacuum processing apparatus of the present invention is not limited to this, and includes a CVD apparatus, an etching apparatus, an ion implantation apparatus, and the like.
[0067]
In addition, the present invention is not limited to a single-wafer apparatus as described above, and can be implemented for an in-line apparatus that performs film formation while transporting a substrate.
[0068]
Moreover, although the said Example demonstrated the case where the board | substrate 5 was set to the horizontal state and arrange | positioned in the vacuum apparatus (preparation take-out chamber 13), the electrostatic adsorption apparatus of this invention, a vacuum apparatus, and a vacuum processing apparatus are perpendicular | vertical. It also includes the case of mounting in the direction. In the case where the substrate is arranged vertically, the present invention is particularly effective because when the substrate is not electrostatically adsorbed according to the present invention, the deflection due to its own weight becomes larger than in the case where the substrate is disposed horizontally and the substrate may be damaged.
[0069]
Incidentally, the (first, second) adsorbers 26a, in 26b, the insulator 32a, the electrode _{31a 1 ~31a 6, 31b 1 ~31b} 6 is embedded within 32b, electrodes 31a ₁ ~31a ₆ , 31b _{1 to} 31b ₆ may be exposed on the mounting surfaces 33a and 33b side. In that case, the surfaces of the electrodes 31a _{1 to} 31a ₆ and 31b _{1 to} 31b ₆ may or may not be the same height as the placement surfaces 33a and 33b.
[0070]
When the electrodes 31a _{1 to} 31a ₆ and 31b _{1 to} 31b ₆ are in contact with the back surface of the substrate 5, a protective film may be formed on the surfaces of the electrodes 31a _{1 to} 31a ₆ and 31b _{1 to} 31b ₆ .
[0071]
【The invention's effect】
It is possible to eliminate bending and warping due to the weight of the substrate.
Since the inside of the edge portion of the substrate does not come into contact with the electrostatic adsorption device, there is no damage or dust generation.
Since there is no bending, the moving distance in the vertical direction of the pickup unit can be shortened. The height of the vacuum device can be reduced.
Since a plurality of substrates can be arranged in a state where the substrate is held without being bent, an improvement in substrate transfer position accuracy is also expected.
[Brief description of the drawings]
FIG. 1 is an example of a vacuum processing apparatus of the present invention. FIG. 2 (a) is a diagram for explaining a vacuum apparatus of the present invention (1).
(b): Diagram for explaining the electrostatic adsorption device of the present invention (1)
FIG. 3 is a diagram (2) for explaining the electrostatic chuck of the present invention.
FIG. 4A is a diagram (2) for explaining the vacuum apparatus of the present invention.
(b): Diagram for explaining the electrostatic attraction apparatus of the present invention (3)
FIG. 5 is a diagram for explaining a state in which a substrate is fully loaded in the vacuum apparatus according to the present invention. FIG. 6 is a diagram for explaining unloading of the substrate from the vacuum apparatus according to the present invention. Example of vacuum device [Fig. 8] Diagram for explaining the calculation method of the deflection amount [Explanation of symbols]
2 ... Vacuum processing device 5 ... Substrate 13 ... Vacuum device (feeding and unloading chamber)
26... Electrostatic attracting devices 26 a and 26 b... 1st and 2nd attracting members 31 a _{1 to} 31 a ₆ , 31 b _{1 to} 31 b ₆ ... Electrodes 32 a and 32 b ... Insulators 33 a and 33 b. (One surface)

Claims (1)

A vacuum chamber in which a plurality of adsorption devices for adsorbing a single square glass substrate are disposed;
A vacuum device for manufacturing a thin display having a power source arranged outside the vacuum chamber,
The adsorption device has first and second adsorption members,
The first and second adsorbing members each include an insulator having at least one surface formed flat, and the one surface has the two parallel edge portions of the glass substrate placed on the one surface. Are arranged horizontally in parallel at the same height with a predetermined interval,
The plurality of adsorption devices are arranged at regular intervals in the vertical direction in the vacuum chamber,
A plurality of electrodes are arranged in a row on the insulator, and a positive voltage and a negative voltage are alternately applied to the electrodes,
The polarity of the applied voltage of the electrode is configured to be reversible,
When reversing the applied voltage to the electrode of the adsorption device on which one glass substrate is disposed, the applied voltage to the electrode of the other adsorption device on which another glass substrate is disposed is not reversed. Using a vacuum device that can
Wherein a substrate loading and unloading method for loading and unloading the glass substrate of the rectangle on the suction device of the true SoraSo location,
When placing the glass substrate bent by its own weight on the adsorption device,
Quiesce the glass substrate carrying in a horizontal state on the pickup portion provided at the tip of the arm of the base plate conveyance robot on the suction device,
The pickup unit is lowered, a voltage is applied to the electrodes while the glass substrate is in contact with the first and second adsorption members, and the glass substrate is adsorbed in a horizontal state, and an edge portion of the glass substrate is removed. After holding
Move the pickup unit away from the glass substrate,
When moving the glass substrate from the electrostatic adsorption device,
Contacting the pickup unit with the back surface of the glass substrate disposed on the suction device;
Holding the glass substrate in contact with the pickup unit in a state where the positive voltage and the negative voltage are applied to the electrodes of the electrostatic adsorption device that holds the glass substrate in which the pickup unit is not in contact The applied voltage to the electrode of the electrostatic adsorption device reverses the polarity,
Next, a substrate carrying-in / out method in which the pickup unit is moved upward to transfer the glass substrate onto the pickup unit, and the pickup unit is pulled out.

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