JP4740853B2 - Mbe成長によるアンチモン化アルカリ光電陰極 - Google Patents
Mbe成長によるアンチモン化アルカリ光電陰極 Download PDFInfo
- Publication number
- JP4740853B2 JP4740853B2 JP2006526441A JP2006526441A JP4740853B2 JP 4740853 B2 JP4740853 B2 JP 4740853B2 JP 2006526441 A JP2006526441 A JP 2006526441A JP 2006526441 A JP2006526441 A JP 2006526441A JP 4740853 B2 JP4740853 B2 JP 4740853B2
- Authority
- JP
- Japan
- Prior art keywords
- photocathode
- substrate
- alkali
- layer
- antimonide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003513 alkali Substances 0.000 title claims description 25
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 23
- 229910052596 spinel Inorganic materials 0.000 claims description 15
- 239000011029 spinel Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 60
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101000581125 Homo sapiens Rho-related GTP-binding protein RhoF Proteins 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 102100027608 Rho-related GTP-binding protein RhoF Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- -1 but not all Chemical class 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/02—Details
- H01J40/04—Electrodes
- H01J40/06—Photo-emissive cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Appl. Surf. Sci. 第175−6頁、101(2001年)
Claims (8)
- 光電陰極を作る中間物であって、
基板と、
該基板により支承される活性層と、
を有し、前記活性層は、前記基板上にエピタキシャル成長された、光電子放出性アンチモン化アルカリを含み、
前記アンチモン化アルカリの材料の格子定数が7.73から9.18オングストロームの範囲にある、
ところの中間物。 - 前記基板が尖晶石を含む、請求項1に記載の中間物。
- 前記尖晶石の格子定数が8.083オングストロームである、請求項2に記載の中間物。
- 前記アンチモン化アルカリの材料が立方晶をもつ、請求項1に記載の中間物。
- 光電陰極を作る中間物を製造する方法であって、
基板により支承される活性層を形成する工程を含み、
前記活性層は、前記基板上にエピタキシャル成長された、光電子放出性アンチモン化アルカリを含み、
前記アンチモン化アルカリの材料の格子定数が7.73から9.18オングストロームの範囲にある、
ところの方法。 - 前記基板が尖晶石を含む、請求項5に記載の方法。
- 前記尖晶石の格子定数が8.083オングストロームである、請求項6に記載の方法。
- 前記アンチモン化アルカリの材料が立方晶をもつ、請求項5に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48137303P | 2003-09-14 | 2003-09-14 | |
US60/481,373 | 2003-09-14 | ||
US10/711,354 US6992441B2 (en) | 2003-09-14 | 2004-09-13 | MBE grown alkali antimonide photocathodes |
US10/711,354 | 2004-09-13 | ||
PCT/US2004/031041 WO2005027171A2 (en) | 2003-09-14 | 2004-09-14 | Mbe grown alkali antimonide photocathodes |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007516572A JP2007516572A (ja) | 2007-06-21 |
JP4740853B2 true JP4740853B2 (ja) | 2011-08-03 |
Family
ID=34316260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006526441A Expired - Lifetime JP4740853B2 (ja) | 2003-09-14 | 2004-09-14 | Mbe成長によるアンチモン化アルカリ光電陰極 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6992441B2 (ja) |
EP (1) | EP1665325A4 (ja) |
JP (1) | JP4740853B2 (ja) |
RU (1) | RU2006106484A (ja) |
WO (1) | WO2005027171A2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100994528B1 (ko) * | 2008-07-22 | 2010-11-15 | 포테그라랩스 주식회사 | 태양전지 |
US9170162B2 (en) * | 2012-07-30 | 2015-10-27 | Optical Physics Company | Laser beam control system with bidirectional beam director |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5885244A (ja) * | 1981-11-04 | 1983-05-21 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 光電陰極 |
JPH05266857A (ja) * | 1991-12-20 | 1993-10-15 | Litton Syst Inc | 光電陰極装置とその製造方法及び光電陰極装置を適用した暗視システム用画像増幅管 |
JPH06119872A (ja) * | 1992-10-05 | 1994-04-28 | Hamamatsu Photonics Kk | 光電子または2次電子放射用陰極 |
JP2001202873A (ja) * | 2000-01-17 | 2001-07-27 | Hamamatsu Photonics Kk | 光電子又は二次電子放射用陰極、光電子増倍管及び電子増倍管 |
JP2001236877A (ja) * | 2000-02-24 | 2001-08-31 | Makoto Ishida | 光検出装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4368098A (en) | 1969-10-01 | 1983-01-11 | Rockwell International Corporation | Epitaxial composite and method of making |
US4896035A (en) * | 1987-08-06 | 1990-01-23 | Phrasor Scientific, Inc. | High mass ion detection system and method |
US5475227A (en) * | 1992-12-17 | 1995-12-12 | Intevac, Inc. | Hybrid photomultiplier tube with ion deflector |
US5977705A (en) | 1996-04-29 | 1999-11-02 | Litton Systems, Inc. | Photocathode and image intensifier tube having an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both |
US5962843A (en) | 1997-07-17 | 1999-10-05 | Sinor; Timothy Wayne | Night vision having an image intensifier tube, improved transmission mode photocathode for such a device, and method of making |
US6121612A (en) | 1997-10-22 | 2000-09-19 | Litton Systems, Inc. | Night vision device, image intensifier and photomultiplier tube, transfer-electron photocathode for such, and method of making |
JP2002150928A (ja) * | 2000-11-15 | 2002-05-24 | Hamamatsu Photonics Kk | 半導体光電陰極 |
-
2004
- 2004-09-13 US US10/711,354 patent/US6992441B2/en not_active Expired - Lifetime
- 2004-09-14 EP EP04784760A patent/EP1665325A4/en not_active Withdrawn
- 2004-09-14 JP JP2006526441A patent/JP4740853B2/ja not_active Expired - Lifetime
- 2004-09-14 RU RU2006106484/28A patent/RU2006106484A/ru not_active Application Discontinuation
- 2004-09-14 WO PCT/US2004/031041 patent/WO2005027171A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5885244A (ja) * | 1981-11-04 | 1983-05-21 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 光電陰極 |
JPH05266857A (ja) * | 1991-12-20 | 1993-10-15 | Litton Syst Inc | 光電陰極装置とその製造方法及び光電陰極装置を適用した暗視システム用画像増幅管 |
JPH06119872A (ja) * | 1992-10-05 | 1994-04-28 | Hamamatsu Photonics Kk | 光電子または2次電子放射用陰極 |
JP2001202873A (ja) * | 2000-01-17 | 2001-07-27 | Hamamatsu Photonics Kk | 光電子又は二次電子放射用陰極、光電子増倍管及び電子増倍管 |
JP2001236877A (ja) * | 2000-02-24 | 2001-08-31 | Makoto Ishida | 光検出装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1665325A4 (en) | 2010-12-01 |
EP1665325A2 (en) | 2006-06-07 |
RU2006106484A (ru) | 2006-08-27 |
WO2005027171A3 (en) | 2005-11-03 |
WO2005027171A2 (en) | 2005-03-24 |
US20050104517A1 (en) | 2005-05-19 |
JP2007516572A (ja) | 2007-06-21 |
US6992441B2 (en) | 2006-01-31 |
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