JP4737870B2 - Liquid crystal display - Google Patents
Liquid crystal display Download PDFInfo
- Publication number
- JP4737870B2 JP4737870B2 JP2001161781A JP2001161781A JP4737870B2 JP 4737870 B2 JP4737870 B2 JP 4737870B2 JP 2001161781 A JP2001161781 A JP 2001161781A JP 2001161781 A JP2001161781 A JP 2001161781A JP 4737870 B2 JP4737870 B2 JP 4737870B2
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- Prior art keywords
- power supply
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- liquid crystal
- circuit
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Description
【0001】
【発明の属する技術分野】
本発明は、多結晶シリコンTFTからなる集積回路を内蔵する構成を用いた液晶表示装置に関する。
【0002】
【従来の技術】
現在の液晶表示装置は、携帯電話やポケットPC(Personal Computer)などに代表されるように高精細・小型化が進んでおり、特に非表示領域のサイズの縮小化が進んでいる。図3に従来の多結晶シリコンTFT(Thin Film Transistor)からなる集積回路を内蔵した液晶表示装置の回路構成図を示す。1は電源配線A、2は電源配線B、3は電源配線C、4はシフトレジスタ回路、5はレベルシフタ回路、6はバッファー回路、7は表示領域である。電源配線A・B・Cは異なる電位である。低温多結晶シリコンTFTからなる集積回路を内蔵する液晶表示パネルでは、画素TFT駆動に低温多結晶シリコンTFTからなるシフトレジスタ回路及びレベルシフタ回路及びバッファー回路と駆動回路を動作させる電源配線を有している。
【0003】
【発明が解決しようとする課題】
低温多結晶シリコンTFTからなる集積回路を内蔵する液晶表示パネルでは、内蔵回路を駆動するための外部入力電源が必要であり、内蔵回路の間に内蔵回路の駆動用の電源配線が必要である。液晶表示パネルの非表示領域は内蔵駆動回路の領域によって決まる。内蔵駆動回路はパネルサイズ及び回路構成が大きくなると電源配線の抵抗を増加さないために電源配線の幅を太くすることになる。図2に多結晶シリコンTFTからなる集積回路を内蔵した液晶表示装置の回路構成図を示す。内蔵回路内の電源配線を太くすることで、内蔵回路に必要な領域が左右方向に多く必要になり、非表示領域が広くなる問題がある。
【0004】
そこで本発明の目的は、前記の問題点を解決するものであり、液晶表示装置の表示領域を確保し非表示領域の狭くすることにある。
【0005】
【課題を解決するための手段】
上記目的を達成するため、本発明は多結晶シリコンTFTからなる集積回路を内蔵する液晶表示装置で、多結晶シリコンTFTからなる内蔵集積回路の電源配線が同電位で複数本並列に有る場合、同電位の電源線を網状に接続する配線を配置し、電源配線の抵抗を減らすことで、電源配線の太さを細くすることを可能にする構造にしたものであり、液晶表示装置の表示領域を確保し非表示領域の狭くすることが得られる。
【0006】
すなわち、本発明の請求項1に記載の発明は、多結晶シリコンTFTからなる駆動回路を内蔵した液晶表示パネルを備え、前記多結晶シリコンTFTからなる内蔵集積回路内の電源配線が同電位で複数本並列に有する液晶表示装置において、これら複数の同電位の電源線間を架け渡す網状接続配線が設けられていることにより、電源配線の抵抗を減らすことで、電源配線の太さを細くすることを可能にする構造にしたものであり、液晶表示装置の表示領域を確保し非表示領域の狭くすることができるという作用を有するものである。
【0007】
また、請求項2に記載の発明は、多結晶シリコンTFTからなる集積回路を内蔵させ、なおかつ単結晶シリコンからなるICをCOG実装する構成のTFTを用いた液晶表示装置で、多結晶シリコンTFTからなる内蔵集積回路の電源配線が同電位で複数本並列に有る場合、同電位の電源線を網状に接続する配線を配置し、電源配線の抵抗を減らすことで、電源配線の太さを細くすることを可能にする構造にしたものであり、液晶表示装置の表示領域を確保し非表示領域の狭くすることができるという作用を有するものである。
【0008】
また、請求項3に記載の発明は、請求項1又は請求項2の多結晶シリコンTFTからなる内蔵集積回路の電源配線を電源配線と異なる層(レイヤー)の導電性膜で構成することを特徴とするもので、同電位の電源線を網状に接続する配線を配置し、電源配線の抵抗を減らすことで、電源配線の太さを細くすることを可能にする構造にしたものであり、液晶表示装置の表示領域を確保し非表示領域の狭くすることができるという作用を有するものである。
【0009】
【発明の実施の形態】
【0010】
以下、本発明の実施の形態について図面を参照にしながら説明する。
【0011】
(第1の実施の形態)
図1は本発明の実施の形態1における多結晶シリコンTFTからなる内蔵回路の構成図を示す。1は電源配線A、2は電源配線B、3は電源配線C、4a,4bはシフトレジスタ回路、5はレベルシフタ回路、6はバッファー回路、7は表示領域、8a,8bは電源配線A用の網状接続配線、9a,9bは電源配線B用の網状接続配線、10a,10bは電源配線C用の網状接続配線である。電源配線A・B・Cは異なる電位である。内蔵回路間に配線された同電位の電源配線を、電源配線と垂直に網状に接続する配線することで電源配線の抵抗を下げ、電源配線を細くする構造にしている。つまり、複数の同電位の電源線A・B・C間を架け渡す網状接続配線8a,8b,9a,9b,10a,10を設け、電源配線の抵抗を下げ、電源配線を細くする構造にし、内蔵回路に必要な非表示領域を横方向と縦方向に狭くすることを可能にする。
【0012】
(第2の実施の形態)
図2は本発明の第2の実施の形態における、前記液晶表示装置にて、電源配線と垂直に網状に接続する配線を電源配線と異なる層(レイヤー)の導電性膜で形成する構成図を示す。1は電源配線A、2は電源配線B、4a,4bはシフトレジスタ回路、8は電源配線A用の網状接続配線、11は絶縁膜である。内蔵駆動回路領域で電源配線と異なるレイヤー(層)の導電性膜にて同電位の電源配線を網上に接続する配線を形成させることで、異なる電位の電源配線および駆動回路をバイパスさせる。これによって電源配線の抵抗を下げ、電源配線を細くする構造にして、内蔵回路に必要な非表示領域を横方向縦方向に狭くすることを可能にする。
【0013】
【発明の効果】
以上説明したように本発明は、多結晶シリコンTFTからなる集積回路を内蔵した液晶表示パネルもしくは多結晶シリコンTFTからなる集積回路を内蔵させ、なおかつ単結晶シリコンからなるICをCOG(chip on glass)実装する構成のTFTを用いた液晶表示パネルで、前記多結晶シリコンTFTからなる内蔵集積回路内の電源配線が同電位で複数本並列に有る場合、同電位の電源線を網状に接続する配線を配置し、電源配線の抵抗を減らすことで、電源配線の太さを細くする構造にしたものであり、液晶表示装置の表示領域を確保し非表示領域の狭くすることを可能にする。非表示領域を狭くすることで、携帯電話やポケットPCでパネルサイズに制約が有る場合、表示領域を大きくとれ、また表示領域が同サイズである場合、非表示領域が狭くなることでパネルサイズが小さくなり、商品価値を高めることが可能である。また、表示領域が同サイズの場合非表示領域が狭くなることで、低温多結晶シリコンTFT基板での取れ数が多くなり、コストダウンをすることが可能である。
【0014】
【図面の簡単な説明】
【図1】本発明の第1の実施の形態における液晶表示装置の構成図
【図2】本発明の第2の実施の形態における液晶表示装置の構成図
【図3】従来の液晶表示装置の構成図
【符号の説明】
1 電源配線A
2 電源配線B
3 電源配線C
4a,4b シフトレジスタ回路
5 レベルシフタ回路
6 バッファー回路
7 表示領域
8,8a,8b 電源配線A用の網状接続配線
9a,9b 電源配線B用の網状接続配線
10a,10b 電源配線C用の網状接続配線
11 絶縁膜[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a liquid crystal display device using a configuration incorporating an integrated circuit made of polycrystalline silicon TFTs.
[0002]
[Prior art]
The current liquid crystal display devices have been advanced in high definition and miniaturization as typified by mobile phones and pocket PCs (Personal Computers), and in particular, the size of non-display areas has been reduced. FIG. 3 shows a circuit configuration diagram of a liquid crystal display device incorporating an integrated circuit made of a conventional polycrystalline silicon TFT (Thin Film Transistor). 1 is a power supply line A, 2 is a power supply line B, 3 is a power supply line C, 4 is a shift register circuit, 5 is a level shifter circuit, 6 is a buffer circuit, and 7 is a display area. The power supply lines A, B, and C are at different potentials. A liquid crystal display panel incorporating an integrated circuit made of low-temperature polycrystalline silicon TFT has a shift register circuit made of low-temperature polycrystalline silicon TFT, a level shifter circuit, a buffer circuit, and a power supply wiring for operating the drive circuit for driving the pixel TFT. .
[0003]
[Problems to be solved by the invention]
In a liquid crystal display panel incorporating an integrated circuit made of low-temperature polycrystalline silicon TFT, an external input power supply for driving the built-in circuit is required, and a power supply wiring for driving the built-in circuit is required between the built-in circuits. The non-display area of the liquid crystal display panel is determined by the area of the built-in drive circuit. When the panel size and circuit configuration of the built-in drive circuit are increased, the width of the power supply wiring is increased in order not to increase the resistance of the power supply wiring. FIG. 2 shows a circuit configuration diagram of a liquid crystal display device incorporating an integrated circuit made of polycrystalline silicon TFTs. By thickening the power supply wiring in the built-in circuit, there is a problem that a large area required for the built-in circuit is required in the left-right direction, and the non-display area is widened.
[0004]
Accordingly, an object of the present invention is to solve the above-mentioned problems, and is to secure a display area of a liquid crystal display device and to narrow a non-display area.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is a liquid crystal display device incorporating an integrated circuit made of polycrystalline silicon TFTs. When the power supply wirings of the built-in integrated circuit made of polycrystalline silicon TFTs are in parallel at the same potential, The wiring that connects the power supply lines of the potential to the network is arranged, and the resistance of the power supply wiring is reduced, so that the thickness of the power supply wiring can be reduced, and the display area of the liquid crystal display device is reduced. It is possible to secure and narrow the non-display area.
[0006]
That is, the invention according to
[0007]
The invention described in
[0008]
According to a third aspect of the present invention, the power supply wiring of the built-in integrated circuit comprising the polycrystalline silicon TFT according to the first or second aspect is constituted by a conductive film of a layer different from the power supply wiring. The wiring that connects the power lines of the same potential in a net pattern is arranged, and the resistance of the power wiring is reduced, so that the thickness of the power wiring can be reduced. The display device has a function of securing a display area and narrowing a non-display area.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
[0010]
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0011]
(First embodiment)
FIG. 1 shows a configuration diagram of a built-in circuit composed of a polycrystalline silicon TFT according to the first embodiment of the present invention. 1 is a power supply wiring A, 2 is a power supply wiring B, 3 is a power supply wiring C, 4a and 4b are shift register circuits, 5 is a level shifter circuit, 6 is a buffer circuit, 7 is a display area, 8a and 8b are for the power supply wiring A Reticulated connection wiring, 9a and 9b are reticulated connection wiring for power supply wiring B, and 10a and 10b are reticulated connection wiring for power supply wiring C. The power supply lines A, B, and C are at different potentials. The power supply wiring of the same potential wired between the built-in circuits is connected to the power supply wiring in a mesh pattern so that the resistance of the power supply wiring is lowered and the power supply wiring is thinned. In other words, a network connection wiring 8a, 8b, 9a, 9b, 10a, 10 that bridges a plurality of power lines A, B, and C of the same potential is provided, the resistance of the power wiring is lowered, and the power wiring is thinned. The non-display area necessary for the built-in circuit can be narrowed in the horizontal and vertical directions.
[0012]
(Second Embodiment)
FIG. 2 is a configuration diagram in which, in the liquid crystal display device according to the second embodiment of the present invention, wirings connected in a mesh pattern perpendicular to the power supply wirings are formed of a conductive film in a layer different from the power supply wirings. Show. 1 is a power supply wiring A, 2 is a power supply wiring B, 4a and 4b are shift register circuits, 8 is a network connection wiring for the power supply wiring A, and 11 is an insulating film. In the built-in drive circuit region, a power line having the same potential is connected to the net by a conductive film of a layer (layer) different from the power line, thereby bypassing the power line and the drive circuit having different potentials. As a result, the resistance of the power supply wiring is lowered and the power supply wiring is thinned, so that the non-display area necessary for the built-in circuit can be narrowed in the horizontal and vertical directions.
[0013]
【The invention's effect】
As described above, the present invention incorporates a liquid crystal display panel incorporating an integrated circuit made of polycrystalline silicon TFTs or an integrated circuit made of polycrystalline silicon TFTs, and an IC made of single crystal silicon is formed by COG (chip on glass). In a liquid crystal display panel using TFTs configured to be mounted, when there are a plurality of power supply wirings in the built-in integrated circuit composed of the polycrystalline silicon TFTs in parallel at the same potential, wiring for connecting the power supply lines of the same potential in a mesh pattern By arranging and reducing the resistance of the power supply wiring, the thickness of the power supply wiring is reduced, and the display area of the liquid crystal display device can be secured and the non-display area can be narrowed. By narrowing the non-display area, if the panel size is limited in mobile phones and pocket PCs, the display area can be made large. If the display area is the same size, the non-display area becomes narrow and the panel size is reduced. It is possible to reduce the product value. Further, when the display area is the same size, the non-display area is narrowed, so that the number of low-temperature polycrystalline silicon TFT substrates can be increased, and the cost can be reduced.
[0014]
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a liquid crystal display device according to a first embodiment of the present invention. FIG. 2 is a configuration diagram of a liquid crystal display device according to a second embodiment of the present invention. Configuration diagram [Explanation of symbols]
1 Power supply wiring A
2 Power supply wiring B
3 Power supply wiring C
4a, 4b
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2001161781A JP4737870B2 (en) | 2001-05-30 | 2001-05-30 | Liquid crystal display |
Applications Claiming Priority (1)
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JP2001161781A JP4737870B2 (en) | 2001-05-30 | 2001-05-30 | Liquid crystal display |
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JP2002350809A JP2002350809A (en) | 2002-12-04 |
JP4737870B2 true JP4737870B2 (en) | 2011-08-03 |
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JP2001161781A Expired - Fee Related JP4737870B2 (en) | 2001-05-30 | 2001-05-30 | Liquid crystal display |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4997867B2 (en) * | 2006-08-17 | 2012-08-08 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
EP2541533A1 (en) * | 2010-02-25 | 2013-01-02 | Sharp Kabushiki Kaisha | Display device |
KR102327085B1 (en) | 2014-10-20 | 2021-11-17 | 삼성디스플레이 주식회사 | Organic light-emitting display apparatus |
EP4020575A4 (en) * | 2019-08-23 | 2022-12-14 | BOE Technology Group Co., Ltd. | Display device and manufacturing method therefor |
CN111474785A (en) * | 2020-05-12 | 2020-07-31 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display panel |
CN115768205A (en) * | 2022-11-29 | 2023-03-07 | 京东方科技集团股份有限公司 | Display substrate and display device |
Citations (10)
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JPS61156751A (en) * | 1984-12-28 | 1986-07-16 | Fujitsu Ltd | Semiconductor integrated circuit |
JPH0282552A (en) * | 1988-09-19 | 1990-03-23 | Fujitsu Ltd | Semiconductor integrated circuit |
JPH05335484A (en) * | 1992-06-01 | 1993-12-17 | Hitachi Ltd | Power supply wiring for semiconductor integrated circuit |
JPH0613589A (en) * | 1992-06-25 | 1994-01-21 | Seiko Epson Corp | Master slice semiconductor device |
JPH08114817A (en) * | 1994-10-14 | 1996-05-07 | Toshiba Corp | Liquid crystal display device |
JPH10133218A (en) * | 1996-11-01 | 1998-05-22 | Hitachi Ltd | Equipment mounting tape carrier package and liquid crystal display device |
JPH1187510A (en) * | 1997-07-10 | 1999-03-30 | Kawasaki Steel Corp | Wiring structure, forming method thereof, and semiconductor integrated circuit applying thereof |
JP2000305527A (en) * | 1999-04-20 | 2000-11-02 | Seiko Epson Corp | Driving circuit of electrooptic device, electrooptic device and electronic equipment |
JP2001109435A (en) * | 1999-10-05 | 2001-04-20 | Toshiba Corp | Display device |
JP2001134238A (en) * | 1999-11-05 | 2001-05-18 | Toshiba Corp | Display device |
-
2001
- 2001-05-30 JP JP2001161781A patent/JP4737870B2/en not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61156751A (en) * | 1984-12-28 | 1986-07-16 | Fujitsu Ltd | Semiconductor integrated circuit |
JPH0282552A (en) * | 1988-09-19 | 1990-03-23 | Fujitsu Ltd | Semiconductor integrated circuit |
JPH05335484A (en) * | 1992-06-01 | 1993-12-17 | Hitachi Ltd | Power supply wiring for semiconductor integrated circuit |
JPH0613589A (en) * | 1992-06-25 | 1994-01-21 | Seiko Epson Corp | Master slice semiconductor device |
JPH08114817A (en) * | 1994-10-14 | 1996-05-07 | Toshiba Corp | Liquid crystal display device |
JPH10133218A (en) * | 1996-11-01 | 1998-05-22 | Hitachi Ltd | Equipment mounting tape carrier package and liquid crystal display device |
JPH1187510A (en) * | 1997-07-10 | 1999-03-30 | Kawasaki Steel Corp | Wiring structure, forming method thereof, and semiconductor integrated circuit applying thereof |
JP2000305527A (en) * | 1999-04-20 | 2000-11-02 | Seiko Epson Corp | Driving circuit of electrooptic device, electrooptic device and electronic equipment |
JP2001109435A (en) * | 1999-10-05 | 2001-04-20 | Toshiba Corp | Display device |
JP2001134238A (en) * | 1999-11-05 | 2001-05-18 | Toshiba Corp | Display device |
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