JP4731919B2 - Film-like article - Google Patents

Description

The present invention relates to a film-like article on which a thin film integrated circuit is mounted and a manufacturing method thereof.

  In recent years, opportunities for seeing products mounted with chips formed from silicon wafers have increased. A chip formed from a silicon wafer can record various information and provide information to consumers and the like.

In addition, since chips formed from silicon wafers do not require manual input of information, it is expected to save input labor and errors. For example, when there is a need to send information, information on the contents of the business card is provided in order to prevent the reading error of the other party's destination number, and to provide a means for accurately sending without a dialing error with a simple system configuration. A business card with a memory function that includes a non-contact IC tag has been proposed as a memory function for storing (see Patent Document 1).
JP 2002-183893 A

However, in the above-mentioned Patent Document 1, since the chip formed from the silicon wafer is thick, the region where the chip is provided has a protrusion or a visible size, which reduces the design of the business card. It was.

  Therefore, an object of the present invention is to provide an integrated circuit having a configuration that does not impair designability unlike a chip formed from a silicon wafer, and a film-like article on which the integrated circuit is mounted, for example, a business card, a card, or a publication. To do.

In view of the above problems, the present invention is characterized in that a thin film integrated circuit (hereinafter also referred to as an IDF chip) is mounted on a film-like article such as a business card, card, or publication. The IDF chip of the present invention is characterized by having a semiconductor film of 0.2 μm or less, typically 40 nm to 170 nm, preferably 50 nm to 150 nm as an active region. Therefore, it is possible to achieve a thin film as compared with a chip formed from a silicon wafer.

Since the IDF chip of the present invention is very thin, it can be sandwiched between the materials of the film-like article and mounted inside the article. As a result, the design of the film-like article is not impaired.

A film-like article refers to a thin article such as a business card, card, or publication. Materials for these film-like articles are acrylic resins such as polypropylene, polyethylene, polystyrene, polycarbonate, polyethylene-terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polymetal acrylate, ABS, etc. Organic materials, or chemical pulps such as kraft pulp, pulps obtained from non-wood raw materials such as mechanical pulp, hemp and kenaf, paper materials such as waste paper pulp and synthetic pulp.

Further, according to the present invention, the IDF chip is translucent unlike a chip formed from a silicon wafer. Therefore, an IDF chip may be attached to the surface of the article, or a concave portion of the article may be mounted. Even when mounted on the surface or the like in this manner, the IDF chip has translucency and is thin so that the design is not impaired.

Preferably, the semiconductor film included in the IDF chip is formed so as to be sandwiched between an insulating film such as a silicon film containing nitrogen and a resin. Many film-like articles such as business cards are touched by hand, and there is a concern that alkali metal such as Na enters the semiconductor film. Therefore, it is expected that covering with an insulating film or a resin can prevent an alkali metal such as Na from entering the semiconductor film.

Below, the concrete structure of this invention is shown.

The film-like article of the present invention is characterized in that a thin film integrated circuit having a semiconductor film having a thickness of 0.2 μm or less is mounted inside the film-like article.

The film-like article of the present invention has a thin film integrated circuit capable of recording information described in the film-like article, and the thin film integrated circuit having a semiconductor film having a thickness of 0.2 μm or less is mounted inside the film-like article. It is characterized by being.

The film-like article of the present invention includes a thin film integrated circuit capable of recording information described in the film-like article and an antenna connected to the thin film integrated circuit, and a thin film having a semiconductor film having a thickness of 0.2 μm or less The integrated circuit and the antenna are mounted inside a film-like article.

The film-like article of the present invention includes a thin film integrated circuit capable of recording information described in the film-like article and an antenna connected to the thin film integrated circuit, and a thin film having a semiconductor film having a thickness of 0.2 μm or less The integrated circuit is mounted inside the film-shaped article, and the antenna is mounted on the surface of the film-shaped article.

In the film-like article of the present invention, the position X of the thin film integrated circuit satisfies (1/2) · D−30 μm <X <(½) · D + 30 μm, where D is the film thickness of the film-like article. Features.

The film-like article of the present invention includes a thin film integrated circuit capable of recording information described in the film-like article and an antenna connected to the thin film integrated circuit, and a thin film having a semiconductor film having a thickness of 0.2 μm or less The integrated circuit and the antenna are mounted on the surface of a film-like article.

The film-like article of the present invention includes a thin film integrated circuit capable of recording information described in the film-like article and an antenna connected to the thin film integrated circuit, and a thin film having a semiconductor film having a thickness of 0.2 μm or less The integrated circuit is mounted on the surface of the film-shaped article, and the antenna is mounted inside the film-shaped article.

The film-like article provided with the concave portion of the present invention has a thin film integrated circuit capable of recording information described in the film-like article, and the thin film integrated circuit having a semiconductor film having a thickness of 0.2 μm or less is mounted with an antenna. It is characterized by that.

The information described on the film-like article is information written on the film-like article, for example, printed characters, marks, symbols, and the like. These printed characters, marks, symbols, etc. may have a color. Information that can be understood by the five senses, such as sound, touch, uneven shape, and the like may also be used.

The film-like article of the present invention is characterized in that a slit-like opening is provided at a connecting portion between the thin film integrated circuit and the antenna.

The film-like article of the present invention is characterized in that the thin film integrated circuit and the antenna are connected via an anisotropic conductor, an ultrasonic adhesive, or an ultraviolet curable resin.

In the film-like article of the present invention, the thin film integrated circuit is translucent.

In the film-like article of the present invention, the thin film integrated circuit has an insulating film containing nitrogen.

In the film-like article of the present invention, the thickness of the thin film integrated circuit is 0.1 to 3 μm.

In the film-like article of the present invention, the thin film integrated circuit is 25 mm ² or less.

In the film-like article of the present invention, the thin film integrated circuit has a semiconductor film having a hydrogen concentration of 1 × 10 ^{19 to} 5 × 10 ²⁰ / cm ³ .

In the film-like article of the present invention, the semiconductor film has a source, a drain, and a channel formation region, and the source, the drain, and the channel formation region are provided so as to be perpendicular to the direction in which the film-like article is bent. It is characterized by being.

In the film-like article of the present invention, a plurality of thin film integrated circuits are mounted.

In the film-like article of the present invention, a plurality of thin film integrated circuits are mounted, and the plurality of thin film integrated circuits are thin film integrated circuits in which an antenna is integrally formed.

In the method for producing a film-like article of the present invention, a plurality of thin film integrated circuits having a semiconductor film having a thickness of 0.2 μm or less are formed on a first substrate, and the plurality of thin film integrated circuits are transferred to a second substrate. Then, by cutting the second substrate, each thin film integrated circuit is cut out, an antenna is connected to a connection terminal of the thin film integrated circuit, and the thin film integrated circuit and the antenna are sandwiched between base materials of a film-like article. And
More preferably, the thin film integrated circuit may be sandwiched between the base materials of the film-like article without the second substrate.

In the method for producing a film-like article of the present invention, a plurality of thin film integrated circuits having a semiconductor film having a thickness of 0.2 μm or less are formed on a first substrate, the thin film integrated circuits are transferred to a second substrate, Each thin film integrated circuit is cut out by cutting the second substrate, an antenna is connected to a connection terminal of the thin film integrated circuit, and the thin film integrated circuit and the antenna are mounted on the surface of the substrate of the film-like article. And
More preferably, the thin film integrated circuit may be mounted on the surface of the base material of the film-like article without the second substrate.

In the method for producing a film-like article of the present invention, a plurality of thin film integrated circuits having a semiconductor film having a thickness of 0.2 μm or less are formed on a first substrate, the thin film integrated circuits are transferred to a second substrate, By cutting the second substrate, each thin film integrated circuit is cut out, the antenna is connected to the connection terminal of the thin film integrated circuit, and the thin film integrated circuit and the antenna are mounted in the concave portion on the surface of the substrate of the film-like article It is characterized by.
More preferably, the thin film integrated circuit may be mounted in the concave portion on the surface of the base material of the film-like article without the second substrate.

In the method for producing a film-like article of the present invention, a plurality of thin film integrated circuits having a semiconductor film having a thickness of 0.2 μm or less are formed on a first substrate, the thin film integrated circuits are transferred to a second substrate, By cutting the second substrate, each thin film integrated circuit is cut out, the thin film integrated circuit is sandwiched by the base material of the film-like article, and the antenna is connected to the thin film integrated circuit through the slit-shaped opening formed in the base material. An antenna is formed on the surface of the substrate so as to connect the two.
More preferably, the thin film integrated circuit is sandwiched between the base materials of the film-like article without the second substrate.

In the method for producing a film-like article of the present invention, an antenna is formed on the surface of a substrate of the film-like article, and a thin film integrated circuit having a semiconductor film having a thickness of 0.2 μm or less is connected through the opening of the substrate A method of manufacturing a film-like article on which a thin film integrated circuit is mounted, wherein a plurality of thin film integrated circuits are formed on a first substrate, the plurality of thin film integrated circuits are transferred to a second substrate, and the second The plurality of thin film integrated circuits are cut out by cutting the substrate.
More preferably, a thin film integrated circuit is mounted on the surface of the base material without the second substrate.

In the method for producing a film-like article of the present invention, the antenna and the thin film integrated circuit are connected using an anisotropic conductor, an ultrasonic adhesive, or an ultraviolet curable resin.

In the method for producing a film-like article of the present invention, the second substrate includes polyethylene-terephthalate, polyethylene naphthalate, polyethersulfone, and acrylic.

In the method for producing a film-like article of the present invention, the antenna is formed by any one of a droplet discharge method, a sputtering method, a printing method, a plating method, a photolithography method, a vapor deposition method using a metal mask, or a combination thereof. It is characterized by forming.

Since the IDF chip of the present invention is thin and translucent, even if the IDF chip is mounted on a film-like article such as a business card or a card, the design is not impaired. In addition, since the IDF chip of the present invention is light and flexible, the durability of the IDF chip can be improved. As described above, the IDF chip can be mounted on a business card or a card without impairing the design.

Further, by applying such an IDF chip, security can be improved. Of course, information management can be simplified by mounting an IDF chip on a business card or card. In addition, errors due to manual input can be eliminated, and information can be exchanged in a short time. Thus, the convenience of business cards and cards can be improved by the IDF chip.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and it is easy for those skilled in the art to make various changes in form and details without departing from the spirit and scope of the present invention. Understood. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

Many of the following embodiments will be described using a business card as a film-like article, but the present invention is not limited to this.

(Embodiment 1)
In this embodiment, a structure of a business card mounted with an IDF chip and a mounting method on the business card will be described. Note that in this embodiment mode, a case where a non-contact type IDF chip is mounted on a business card is described, but the present invention is not limited to this. In particular, a non-contact type IDF chip is also referred to as a wireless chip.

As shown in FIG. 1A, an antenna substrate 102 on which an IDF chip 100 and an antenna 101 are formed is prepared. The IDF chip can be formed over a glass substrate and transferred to the antenna substrate 102 through a subsequent peeling step. Further, after the peeling step, the substrate may be mounted on the antenna substrate 102 after being transferred to the flexible substrate. Details of the antenna manufacturing process and the peeling process will be described later.

In this embodiment mode, the antenna is formed separately from the IDF chip. However, the antenna may be formed integrally in the manufacturing process of the IDF chip. When the communication distance is as short as several tens of centimeters, it is not necessary to lengthen the antenna so much that it can be formed integrally with the IDF chip. In the case of integral formation, it is described later.

An IDF chip has a semiconductor film of 0.2 μm or less, typically 40 nm to 170 nm, preferably 50 nm to 150 nm as an active region, so that it is thinner than a chip formed from a silicon wafer. can do. The total thickness including the semiconductor film can be 5 μm or less, preferably 0.1 μm to 3 μm. In addition, since the IDF chip can be transferred to a product itself or transferred to a flexible substrate, the weight can be reduced as compared with a chip formed from a silicon wafer. Such an IDF chip does not impair the design of film-like articles such as business cards.

Further, unlike a chip formed from a silicon wafer, a semiconductor film included in the IDF chip has 1 × 10 ^{19 to} 5 × 10 ²⁰ / cm ^{3 of} hydrogen. Hydrogen can provide a so-called defect termination effect that alleviates defects (dangling bonds) in the semiconductor film. In addition, the flexibility of the IDF chip can be increased. As a result, the IDF chip can be prevented from being damaged even when mounted on a highly flexible film-like article such as a business card. Alternatively, a halogen may be used instead of hydrogen.

FIG. 1B is a cross-sectional view taken along line ab of the antenna substrate 102. The IDF chip 100 is provided on one surface 102a of the antenna substrate, and the antennas 101a and 101b are provided on one surface 102a and the other surface 102b of the antenna substrate, respectively.

1C and 1D are enlarged views of a connection region between the antenna and the IDF chip.

The left figure of FIG.1 (C) has shown the area | region where antenna 101a, 101b cross | intersects. Since the antennas 101a and 101b are provided on both surfaces via the antenna substrate 102, there is a region where they intersect when viewed from above. At the intersection of the antennas, an insulator needs to be interposed so as not to cause a short circuit between the antennas. In this embodiment, the insulating property of the antenna substrate 102 is used as the insulator. Therefore, the antennas 101a and 101b provided on both surfaces of the antenna substrate 102 are connected through the openings of the antenna substrate. The opening is provided in a slit shape, for example, and the antenna 101a and the antenna 101b are connected by pressing the antenna 101a and the antenna 101b to push out the antenna material. By providing the opening in a slit shape, unnecessary antenna material is not pushed out, unnecessary pressure is not applied, and the antenna 101a can be prevented from peeling off. The opening is not limited to a slit shape.

1C shows a region where the IDF chip 100 and the antenna 101b are connected through the antenna substrate 102. FIG. Similarly to the antenna crossing region, the material of the antenna 101b is pushed out from the opening provided in the antenna substrate 102, thereby connecting to the connection wiring of the IDF chip. The opening may be provided in a slit shape as in the region where the antennas intersect. At this time, in order to facilitate the connection, the IDF chip may be provided with bumps 106 as regions to be connection terminals (hereinafter referred to as connection terminals). Such bumps can reduce the connection resistance.

FIG. 1D illustrates an example in which the antennas 101a and 101b are connected by a means different from that in FIG.

The left figure in FIG. 1D is a region where the antennas provided on both sides intersect with each other through the antenna substrate 102. Similarly to the right figure in FIG. 1C, a slit-like opening is provided. Yes. A different configuration is that an anisotropic conductor having a conductor 107 is used as means for connecting the antenna 101a and the antenna 101b. Thus, you may connect using conductors other than antenna material.

The right diagram in FIG. 1D is a region where the IDF chip and the antenna are connected, and an opening is provided as in the left diagram in FIG. A different configuration is that an anisotropic conductor having a conductor 107 is used instead of the bump as means for connecting the antenna and the IDF chip.

Note that the anisotropic conductor may be selectively provided in the connection region or may be provided over the entire antenna substrate 102. Even in the case where the anisotropic conductor is provided on the whole, the conductor 107 is compressed in the connection region, so that the antennas in the connection region and only the antenna and the IDF chip are connected. Therefore, antennas that do not need to be connected do not short-circuit.

In this embodiment mode, the case where the antennas 101a and 101b are formed on both surfaces of the antenna substrate has been described. However, an insulating film is formed over the first antenna provided on one surface, and a short circuit at the intersection is performed. In order to prevent this, an insulating film may be formed, a second antenna may be formed over the insulating film, and the first and second antennas may be connected through contact holes formed in the insulating film.

Such an antenna substrate is sandwiched between a business card base 105 and an IDF chip is mounted on the business card.

Thereafter, as shown in FIG. 2A, a predetermined description is printed on the surface of the business card 120. In this way, a business card mounted with an IDF chip is completed.

FIG. 2B is a cross-sectional view taken along line cd of the business card 120.

Thus, by sandwiching the IDF chip in a bag shape, the adhesive surface, specifically, the end portions that need to be bonded can be reduced to three sides. And the strength of the business card, that is, the durability can be improved.

In this embodiment, the example in which the IDF chip is mounted by being sandwiched in a bag shape has been described. However, the IDF chip may be mounted by being sandwiched between two paper-like substrates. In this case, there are four sides that need to be bonded.

Further, the adhesive surface is not limited to the end portion, but an opening may be provided in a predetermined region of the antenna substrate 102 to increase the adhesiveness.

As shown in FIG. 3, an IDF chip 100 in which an antenna 101 is integrally formed may be mounted. The IDF chip is formed so that the periphery thereof is covered with the business card substrate 105, and the IDF chip is preferably arranged at the center of the business card. As a result, the mechanical strength of the IDF chip can be increased. Specifically, the position where the IDF chip is sandwiched (center of the IDF chip): X is (1/2) · D−30 μm <X <(1/2) · D + 30 μm where D is the thickness of the business card Good. This position is preferably satisfied even when the antenna is formed separately.

As described above, the durability of the IDF chip and the business card can be improved by covering the IDF chip with the base material of the business card as in the present embodiment, that is, by mounting the IDF chip inside the business card.

The information input to the IDF chip includes information on business card printing, information on other companies such as a home page, or company advertisements. In particular, when handling information such as a telephone number and an e-mail address, when the business card receiving side accesses, for example, the e-mail address may be automatically input into e-mail software. Specifically, it may be automatically input to a personal computer or the like via a reader device that reads information of the IDF chip. As a result, manual input errors can be prevented.

In this embodiment, the case of mounting a non-contact type IDF chip has been described, but either a contact type IDF chip or a hybrid type IDF chip may be applied.

(Embodiment 2)
As described in Patent Document 1, since a chip formed from a silicon wafer is non-translucent, it is mounted on the back side of a business card, that is, the side without a printing surface. However, since the IDF chip of the present invention has translucency, it may be mounted on the printing surface, which is the surface of a business card. Therefore, in this embodiment, unlike the above embodiment, a case where an IDF chip is attached to the surface of a business card will be described.

FIG. 4A shows a business card 120 on which an IDF chip 100 and an antenna 101 are mounted. FIG. 4B is a cross-sectional view taken along line ef. The structure and manufacturing process of the IDF chip and antenna will be described later.

While the IDF chip has translucency, the antenna is often made of metal and is not translucent. Therefore, the antenna is preferably formed at the end of the business card, that is, around the business card. Further, a light-transmitting metal material such as indium tin oxide (ITO), indium oxide mixed with 2 to 20% zinc oxide (ZnO), indium oxide 2 If an antenna can be formed using ITO-SiOx (referred to as ITSO for convenience) mixed with 20% silicon oxide (SiO ₂ ) and organic indium, printing is not hindered.

In addition, the beauty of the business card may be enhanced by utilizing the non-translucency of the antenna. In other words, an antenna may be formed on a business card as a decoration.

In this way, after mounting the IDF chip, the entire business card can be covered with a resin 121 by sealing (lamination) to improve the durability of the IDF chip and the business card. When there is a concern about the intrusion of impurities into the IDF chip, a resin or the like is formed so as to cover at least the IDF chip.

Of course, the IDF chip and the antenna may be mounted on a non-printed surface such as the back side of a business card.

In this embodiment, the case of mounting a non-contact type IDF chip has been described, but either a contact type IDF chip or a hybrid type IDF chip may be applied.

(Embodiment 3)
In the present embodiment, unlike the above embodiment, a business card form in which an IDF chip is mounted in a recess will be described.

FIG. 5A shows a business card 120 on which an IDF chip 100 in which an antenna is integrally formed in a recess 122 is mounted. Even IDF chip formed integrally with the antenna, 5 mm square (25 mm ²⁾ or less, preferably may be a 0.3mm square (0.09 mm ²⁾ to 4 mm square (16 mm ^2), as a pattern of a business card It can be mounted in a recess as provided. FIG. 5B is a cross-sectional view taken along line gh. The structure and manufacturing process of the IDF chip and antenna will be described later.

The IDF chip 100 in which the antenna is integrally formed has a state in which the antenna 101 formed on the antenna substrate 102 and the IDF chip 100 are connected via the conductor 107 of the anisotropic conductor 123. A resin 125 or the like is provided so as to cover at least the IDF chip. The resin can improve the durability of the IDF chip, prevent damage during mounting, and improve portability.

When the concave portion is provided as described above, an IDF chip in which the antenna is integrally formed is preferable, but the antenna may be separately formed as in the above embodiment.

After mounting the IDF chip in this manner, the IDF chip may be covered with the resin 121 in order to improve the flatness of the recess. The resin can improve the durability of the IDF chip and prevent impurities from entering. Further, the business card may be sealed (laminated) so as to cover the entire business card, thereby improving the durability of the business card.

In this embodiment, the case of mounting a non-contact type IDF chip has been described, but either a contact type IDF chip or a hybrid type IDF chip may be applied.

(Embodiment 4)
In this embodiment, a form of a business card different from the above embodiment will be described.

As shown in FIG. 6A, the IDF chip 100 is mounted so as to be sandwiched between one base material 105a and the other base material 105b. The structure and manufacturing process of the IDF chip will be described later.

Thereafter, as shown in FIG. 6B, one substrate 105a and the other base material 105b are bonded. At this time, an opening is provided on the surface of one of the substrates, and the bump 106 of the IDF chip and the antenna 101 formed on the surface of the business card can be connected through the opening. At this time, since the antenna often has non-translucency, it is preferable to form the antenna at the end of the business card, that is, around the antenna. The structure and manufacturing process of the antenna will be described later.

FIG. 6C illustrates a top view of the business card 120, and a cross-sectional view taken along line mn corresponds to FIGS. 6A and 6B.

By thus forming the IDF chip and the antenna at different positions such as the inside and the surface of the business card, restrictions on the mounting position and size of the IDF chip and the antenna can be eliminated. For example, when an IDF chip having a CPU (Central Processing Unit) or the like is mounted, the size of the IDF chip is increased. In addition, it is necessary to increase the number of turns of the antenna. Note that the number of turns of the antenna is also limited by the communication distance. In such a case, there is a concern that it is difficult to mount the antenna and the IDF chip on the size of the business card. However, these mountings can be made possible by separating the mounting positions of the antenna and the IDF chip as in the present embodiment.

In this embodiment, the case of mounting a non-contact type IDF chip has been described, but either a contact type IDF chip or a hybrid type IDF chip may be applied.

(Embodiment 5)
In this embodiment, a form of a business card different from the above embodiment will be described.

Unlike a chip formed from a silicon wafer, an IDF chip can be formed on a light-transmitting substrate, and thus has a light-transmitting property. Therefore, as described above, even if the IDF chip is mounted on the print, the display is not hindered. However, since the antenna is made of metal, it is difficult to have translucency. Although there is room for studying a light-transmitting material, there are problems such as resistance. Therefore, in this embodiment, an embodiment in which an antenna is mounted inside a business card and an IDF chip is mounted on the surface of the business card will be described.

First, as shown in FIG. 7A, an antenna is formed over the other base material 105b as in the above embodiment. The structure and manufacturing process of the antenna will be described later. Then, as shown in FIG. 7B, the antenna is sandwiched between one base material 105a and the other base material 105b. At this time, one base material 105 a is provided with an opening, and can be connected to the bump 106 of the IDF chip 100. The opening is provided on the terminal region for connecting the antenna to the IDF chip. The structure and manufacturing process of the IDF chip will be described later.

FIG. 7C shows a top view of the business card 120, and a cross-sectional view taken along op corresponds to FIGS. 7A and 7B.

Thus, by mounting only the IDF chip having translucency on the surface of the business card, restrictions on the mounting position and size of the IDF chip can be eliminated. Further, since the antenna and the IDF chip are formed at different positions, restrictions on the mounting position and size of the antenna and the IDF chip can be eliminated as in the above embodiment. In particular, it is preferable to mount a translucent IDF chip on the surface of a business card without hindering display by printing.

In this embodiment, the case of mounting a non-contact type IDF chip has been described, but either a contact type IDF chip or a hybrid type IDF chip may be applied.

(Embodiment 6)
In this embodiment mode, a form of a business card on which a plurality of IDF chips are mounted will be described, unlike the above embodiment mode.

As shown in FIG. 10A, six IDF chips 100 (A), 100 (B), 100 (C), 100 (D), 100 (E), and 100 (F) are mounted on the business card 120. Of the plurality of IDF chips, the antenna 101 is connected only to the IDF chip 100 (A), and the others can be IDF chips in which the antenna is integrally formed. The structure and manufacturing process of the IDF chip and antenna will be described later.

By mounting a plurality of IDF chips, the amount of information input to the business card can be increased. Furthermore, unauthorized use of business cards can be prevented and security can be improved.

For example, the mutual relationship (for example, arrangement | positioning etc.) of each IDF chip | tip can be used, forgery of an IDF chip | tip can be prevented, and security property can be improved. By randomly arranging the IDF chips, forgery can be prevented even if coincidence / mismatch with the arrangement is used.

Further, information cannot be disclosed unless the unique data of each IDF chip matches. As unique data, a mask ROM can be used, or a serial number can be stamped when patterning a semiconductor film, an insulating film, or the like.

Further, as shown in FIG. 10B, all IDF chips can be formed as integrated IDF chips.

As described above, although a mode in which a plurality of IDF chips are mounted has been shown, information storage means such as a bar code or a magnetic tape may be used to increase the amount of information or improve security.

(Embodiment 7)
In this embodiment mode, a case where a plurality of IDF chips are formed from a large substrate will be described with reference to FIGS.

As shown in FIG. 8A, a metal-containing film (hereinafter referred to as a metal layer) 201 is formed over a substrate 200 having an insulating surface. Examples of the metal include an element selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, and Ir, or an alloy material or a compound material containing the element as a main component. A single layer or a stack of these can be used. For example, the metal layer may be formed by a sputtering method using a metal target. Note that the metal layer may be formed to have a thickness of 10 nm to 200 nm, preferably 50 nm to 75 nm.

Instead of the metal layer, a film including the metal nitride (eg, tungsten nitride or molybdenum nitride) may be used. Instead of the metal layer, a film having the above metal alloy (for example, an alloy of W and Mo: W _x Mo _1-X ) may be used. As the metal alloy, a plurality of targets such as a first metal (W) and a second metal (Mo) are used in the film forming chamber, or an alloy of the first metal (W) and the second metal (Mo). It can form by sputtering method using the target of. Furthermore, nitrogen or oxygen may be added to the metal layer. As a method for addition, nitrogen or oxygen may be ion-implanted into the metal layer, or a film formation chamber may be formed by sputtering in a nitrogen or oxygen atmosphere. At this time, a nitrided metal may be used as a target.

  The peeling process can be controlled by such a metal layer. That is, when a metal alloy is used, the peeling process can be controlled by controlling the composition ratio of each metal of the alloy. Specifically, it is possible to control the heating temperature for peeling and the necessity of heat treatment. As a result, the process margin can be expanded.

  Thereafter, a layer to be peeled is formed on the metal layer 201. This layer to be peeled has an oxide film containing silicon as the insulating film 202, and the oxide film also has a function as a base film. An insulating film formed on the metal layer and provided below the semiconductor film serving as an active element is referred to as a layer to be peeled. The layer to be peeled may have either a single layer structure or a laminated structure. In the case of a stacked structure, an insulating film 203 containing nitrogen such as a silicon nitride (SiN) film or a silicon nitride oxide (SiON or SiNO) film can be provided in order to prevent impurities and dust from entering from a metal layer or a substrate. An insulating film containing nitrogen also functions as a base film.

  As the oxide film containing silicon, silicon oxide, silicon oxynitride, or the like may be formed by a sputtering method or a CVD method. The thickness of the oxide film containing silicon is preferably about twice or more that of the metal layer. In this embodiment, the silicon oxide film is formed to a thickness of 150 to 200 nm by a sputtering method using a silicon target.

When the oxide film containing silicon is formed, an oxide containing the metal (hereinafter referred to as a metal oxide) is formed on the surface of the metal layer 201. The thickness of the metal oxide may be 0.1 nm to 1 μm, preferably 0.1 nm to 100 nm, and more preferably 0.1 nm to 5 nm. Thus, the metal oxide is very thin and may not be observed as a film, and is not shown. The metal oxide is an aqueous solution containing sulfuric acid, hydrochloric acid or nitric acid, an aqueous solution in which sulfuric acid, hydrochloric acid or nitric acid is mixed with hydrogen peroxide, or a thin metal oxide formed on the surface of the metal layer by treatment with ozone water. Can also be used. Further, as another method, plasma treatment in an oxygen atmosphere or oxidation treatment may be performed by generating ozone by irradiating ultraviolet rays in an oxygen-containing atmosphere, and heating to about 200 to 350 ° C. using a clean oven. May be formed.

Next, over the insulating film 203 containing nitrogen, a semiconductor film, an insulating film functioning as a gate insulating film (hereinafter referred to as a gate insulating film) 205, a conductive film functioning as a gate electrode (hereinafter referred to as a gate electrode) 206, a gate Impurity regions 207n and 207p are formed in the semiconductor film using the electrode as a mask, an insulating film 208 covering the gate electrode and the semiconductor film is formed, a wiring 210 connected to the impurity region is formed, an n-channel thin film transistor 230n, and p A channel-type thin film transistor 230p is completed. A thin film integrated circuit can be formed from such a thin film transistor.

Note that the hydrogen concentration of the semiconductor film can be set to 1 × 10 ^{19 to} 5 × 10 ²⁰ / cm ³ by hydrogen diffusion from the insulating film 208.

The semiconductor film can be an amorphous semiconductor, a semi-amorphous semiconductor in which an amorphous state and a crystalline state are mixed (also referred to as SAS), and crystal grains of 0.5 nm to 20 nm can be observed in the amorphous semiconductor. It may have any state selected from a microcrystalline semiconductor and a crystalline semiconductor. In particular, it may have a so-called microcrystal (μc) state in which a crystal of 0.5 nm to 20 nm can be observed.

In this embodiment, an amorphous semiconductor film is formed and a crystalline semiconductor film crystallized by heat treatment is formed. The heat treatment can be a heating furnace, laser irradiation, irradiation of light emitted from a lamp instead of laser light (hereinafter referred to as lamp annealing), or a combination thereof.

When laser irradiation is used, a continuous wave laser (CW laser) or a pulsed laser (pulse laser) can be used. Lasers include Ar laser, Kr laser, excimer laser, YAG laser, Y ₂ O ₃ laser, YVO ₄ laser, YLF laser, YAlO ₃ laser, glass laser, ruby laser, alexandride laser, Ti: sapphire laser, copper vapor One or a plurality of lasers or gold vapor lasers can be used. The beam shape of the laser is preferably linear, and the length of the long axis may be 200 to 350 μm. Further, the laser may have an incident angle θ (0 ° <θ <90 °) with respect to the semiconductor film.

The laser irradiation may be performed by irradiating a continuous wave fundamental laser beam and a continuous wave harmonic laser beam, or a continuous wave fundamental laser beam and a pulsed harmonic laser beam. You may make it irradiate with light.

  In addition, it is a pulse oscillation type laser that oscillates laser light at an oscillation frequency that can irradiate the laser light of the next pulse after the semiconductor film is melted by the laser light and solidifies in the scanning direction. Crystal grains grown continuously can be obtained. That is, a pulse beam that defines a lower limit of the oscillation frequency may be used so that the period of pulse oscillation is shorter than the time from when the semiconductor film is melted until it is completely solidified.

  The oscillation frequency of the pulse beam that can be actually used is 10 MHz or more, and a frequency band that is significantly higher than the frequency band of several tens to several hundreds Hz that is normally used is used.

  Note that laser light may be irradiated in an inert gas atmosphere such as a rare gas or nitrogen. Thereby, roughness of the semiconductor surface due to laser light irradiation can be suppressed, and variation in threshold value caused by variation in interface state density can be suppressed.

  As another heat treatment, when a heating furnace is used, the amorphous semiconductor film is heated at 500 to 550 ° C. for 2 to 20 hours. At this time, the temperature may be set in multiple stages in the range of 500 to 550 ° C. so that the temperature gradually increases. In the first low-temperature heating step, hydrogen or the like of the amorphous semiconductor film comes out, so that so-called hydrogen dipping that reduces film roughness during crystallization can be performed. Furthermore, it is preferable to form a metal element that promotes crystallization, such as Ni, on the amorphous semiconductor film because the heating temperature can be reduced.

  However, in the case of forming a metal element, there is a concern that the metal element may adversely affect the electrical characteristics of the semiconductor element. Therefore, it is necessary to perform a gettering step for reducing or removing the metal element. For example, a process may be performed so as to capture a metal element using an amorphous semiconductor film as a gettering sink.

Alternatively, a crystalline semiconductor film may be formed directly on the surface to be formed. In this case, a crystalline semiconductor film is directly formed on the surface to be formed using heat or plasma using a fluorine-based gas such as GeF ₄ or F ₂ and a silane-based gas such as SiH ₄ or Si ₂ H _6. Can be formed.

As described above, such a semiconductor film can be formed so as to have hydrogen of 1 × 10 ^{19 to} 5 × 10 ²⁰ / cm ³ unlike a chip formed from a silicon wafer. Hydrogen can provide a so-called defect termination effect that alleviates defects in the semiconductor film. In addition, the flexibility of the IDF chip can be increased by hydrogen.

Furthermore, the ratio of the area of the patterned semiconductor film to the area occupied on the IDF chip formation surface is set to 5 to 30%. Thereby, destruction and peeling of the thin film transistor due to bending stress can be prevented.

In order to improve flatness over the patterned semiconductor film, an interlayer insulating film 209 is preferably formed. An organic material or an inorganic material can be used for the interlayer insulating film. As the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, siloxane, or polysilazane can be used. Siloxane has a skeletal structure with a bond of silicon (Si) and oxygen (O), and the substituent contains at least hydrogen, or the substituent has at least one of fluorine, alkyl groups, and aromatic hydrocarbons. Is formed as a starting material. Polysilazane is formed using a liquid material containing a polymer material having a bond of silicon (Si) and nitrogen (N) as a starting material. As the inorganic material, silicon oxide or silicon nitride can be used.

More preferably, an insulating film 211 containing nitrogen is formed to cover the interlayer insulating film and the wiring. That is, the thin film transistor 230 is covered with the insulating films 203 and 211 containing nitrogen. In addition, it may be covered with a resin or the like. As a result, impurities can be prevented from entering the semiconductor film. In particular, when an IDF chip that can be directly touched by hand is mounted on a business card or the like, entry of an alkali metal such as Na can be prevented.

Thereafter, bumps 106 are formed as connection terminals on the interlayer insulating film. The bump can be formed by the same method or material as the antenna.

After the thin film transistor is formed as described above, heat treatment is performed after the metal oxide is formed, and the metal oxide is heated. Alternatively, heat treatment may be performed during formation of the thin film transistor and after formation of the metal oxide. As a result of the heat treatment, the metal oxide film is in a crystalline state. For example, when W (tungsten) is used for the metal layer, if heat treatment is performed at 380 to 410 ° C., for example, 400 ° C., the metal oxide of WO ₂ or WO ₃ becomes a crystalline state. What is necessary is just to determine the temperature and necessity of heat processing by the metal layer selected. As a result, if necessary, the metal oxide can be crystallized and peeled off easily.

The heat treatment for manufacturing the semiconductor element and the heating for crystallizing the metal oxide film can be combined. For example, the heat treatment for crystallization of the metal oxide film uses a so-called hydrogen extraction process heat treatment for preventing rapid hydrogen release from the semiconductor film, or a heating furnace or laser irradiation for forming a crystalline semiconductor film. be able to. As a result, manufacturing steps can be reduced.

Next, the substrate 200 is peeled off. At this time, a support substrate may be used for easy separation. For example, support substrates may be provided on the substrate 200 side and the side facing the substrate 200, respectively, and peeling may be performed using the support substrates. A quartz substrate can be used as the support substrate.

Furthermore, in order to perform peeling easily, it is good to form the part where the adhesiveness lowered | hung so that peeling may be started. For example, a cut is made in the substrate or the support substrate, or a region where peeling is performed from the end surface of the large substrate is scratched with a cutter or the like.

After such a process, the crystallized metal oxide layer or the boundary (interface) between both sides of the metal oxide, that is, the interface between the metal oxide and the metal layer or the interface between the metal oxide and the insulating film 202 Is peeled off and the substrate can be removed.

Moreover, a physical means or a chemical means can be used for the peeling means. As physical means, a force may be applied to the substrate or the support substrate. As a chemical means, an etchant that reacts with the metal layer as the release layer but does not react with other regions may be used. Etching agent can be gas or liquid,

Then, as shown in FIG. 8B, a thin film transistor or the like is transferred to and bonded to the flexible substrate 250 using an adhesive 251. Note that transposition refers to transferring an element (including an element being formed) formed on a certain substrate to another substrate. The material of the flexible substrate is as described above.

Moreover, you may transfer directly to the surface of the articles | goods which mount an IDF chip. In this case, it can be transposed without the flexible substrate, which can contribute to making the IDF chip thinner and lighter.

As the adhesive, an ultraviolet curable resin, specifically, an adhesive such as an epoxy resin adhesive or a resin additive, a double-sided tape, or the like can be used.

With such an IDF chip that can be peeled off the glass substrate that occupies the most thickness of the chip, and can be transferred to a thin film flexible substrate, a thin business card can be achieved.

  When the substrate is peeled off, the metal oxide may be completely removed on the thin film transistor side, or part or most of the metal oxide may be scattered (residual) on the thin film transistor side. If metal oxide remains, it may be removed by etching or the like. At this time, an oxide film containing silicon may be removed. By removing the residue and oxide and then transferring to a flexible substrate, improvement in adhesion can be expected.

When the support substrate is used after the transfer, the support substrate is peeled off. For such adhesion to the supporting substrate that needs to be peeled off, a peelable adhesive, for example, an ultraviolet peeling type that peels off by ultraviolet rays, a thermal peeling type that peels off by heat, or a water-soluble adhesive that peels off by water, Or it is good to use a double-sided tape etc. as an adhesive agent.

Thereafter, each IDF chip 100 is cut out by cutting the flexible substrate. At this time, by using a large-sized flexible substrate, it is possible to perform multi-cavity and reduce the cost of the IDF chip.

Next, as shown in FIG. 8C, the IDF chip 100 is mounted on the antenna substrate 102 on which the antenna 101 is formed.

As shown in the cross-sectional view, the antenna 101 provided on the antenna substrate and the bump 106 are connected by the conductor 107 included in the anisotropic conductor 123.

As described above, an IDF chip can be formed and mounted in a predetermined region.

In this embodiment mode, the peeling method using a metal layer or the like has been described. However, the substrate 200 may be peeled by another peeling method. For example, the substrate 200 can be peeled by irradiating the peeling layer with a laser, or the substrate 200 can be removed by etching.

Alternatively, an opening may be formed so that the peeling layer is exposed, and a fluorine-based or chlorine-based etching agent such as ClF ₃ may be introduced into the opening to peel off the substrate. At this time, a film containing silicon, for example, an amorphous silicon film, a SAS, or a crystalline silicon film is used for the peeling layer. In the case where HF is used as a fluorine-based etching agent, silicon oxide is used for the peeling layer.

Moreover, you may form an IDF chip | tip, without performing peeling transposition at all. In this case, it is necessary to consider the heating process of the thin film transistor and the heat resistant temperature of the substrate 200.
For example, when a SAS that does not have a heating step is used for a semiconductor film, a flexible substrate that does not have high heat resistance can be used.
In the case where a crystalline semiconductor film formed by heating is used for the semiconductor film, a glass substrate that can withstand the heat treatment needs to be used. Since the glass substrate is thicker than the flexible substrate, when it is desired to reduce the film thickness, the back surface of the glass substrate is polished by chemical and mechanical polishing (typically, CMP: Chemical-Mechanical Polishing method). be able to. In the case of directly forming a crystalline semiconductor film, a quartz substrate having a high heat resistance temperature can be used. Also in this case, it is possible to reduce the thickness of the quartz substrate by polishing using a CMP method or the like.

In this embodiment, the case where the thin film integrated circuit is mounted in a so-called face-down state in which the connection terminal portion exists below the IDF chip is described. However, in the so-called face-up state in which the connection terminal portion exists above the IDF chip. A thin film integrated circuit may be mounted. In the face-up state, a wire bonding method is preferably used for the conductive film of the connection terminal portion of the integrated circuit and the contact of the antenna or the like.

As described above, the mode in which the thin film transistor is formed over the substrate 200 and then transferred is described. However, the transfer destination corresponding to the flexible substrate, the timing of separation and transfer, or the number of times is not limited to this embodiment mode. For example, the timing of the transfer may be the transfer to the flexible substrate immediately after heating after forming the metal oxide, and then the thin film transistor may be completed on the flexible substrate. In this case, when a semiconductor film having an amorphous state is used, a thin film transistor can be formed even after being transferred to a flexible substrate because the semiconductor film can be formed at a low heating temperature or without heat treatment. It becomes possible. In addition to the flexible substrate, the tip of the transfer may be directly transferred to the surface of the article or transferred to a printed circuit board or the like. For example, when an IDF chip is mounted on a mobile phone or the like, it can be transferred to a printed circuit board. In addition, it is possible to determine whether the IDF chip is in a face-up state or a face-down state by the number of peeling and transposition.

The IDF chip formed in this way is characterized in that it has a semiconductor film of 0.2 μm or less, typically 40 nm to 170 nm, preferably 50 nm to 150 nm as an active region, unlike a silicon wafer chip. Even if formed on a glass substrate or a quartz substrate, the effects of the present invention can be obtained. Of course, in order to enhance the effect of the IDF chip, it is preferably provided on a flexible substrate, and therefore it is preferable to transpose as described above.

In addition, since the IDF chip is provided on a substrate having an insulating surface or does not have a substrate having an insulating surface, there is no fear of radio wave absorption and reception of a highly sensitive signal compared to a chip formed from a silicon wafer. It can be performed.

Examples of the substrate having an insulating surface include glass substrates such as barium borosilicate glass and alumino borosilicate glass, quartz substrates, and stainless steel substrates. In addition, a plastic substrate represented by polyethylene-terephthalate (PET), polyethylene naphthalate (PEN), or polyethersulfone (PES), or a substrate made of a synthetic resin such as acrylic is used.

In the case of forming an IDF chip on a substrate having such an insulating surface, there is no restriction on the shape of the base substrate as compared with a chip manufactured using a silicon wafer in which the chip is taken out from a circular silicon wafer. Therefore, productivity of the IDF chip can be increased and mass production can be performed. As a result, cost reduction of the IDF chip can be expected. An IDF chip with a very low unit price can generate very large profits by reducing unit cost.

The IDF chip of the present invention can be formed using a flexible substrate. Therefore, compared with the chip | tip formed from a silicon wafer, it has high flexibility and can achieve further weight reduction. The flexible substrate corresponds to a substrate made of plastic such as polyethylene-terephthalate (PET), polyethylene naphthalate (PEN), or polyethersulfone (PES), or a synthetic resin having flexibility such as acrylic.

Such a thin film, lightweight, and highly flexible IDF chip is less likely to be damaged than a chip formed from a silicon wafer.

More preferably, the IDF chip of the present invention is mounted on a film-like article without a substrate having an insulating surface and a flexible substrate. That is, the IDF chip may be directly transferred to the surface of the article. In this case, the flexible substrate can be omitted, and the IDF chip can be made thinner and lighter. As a result, the design of the film-like article is not impaired, which is preferable.

Although the case where the IDF chip and the antenna are separately formed has been described in this embodiment mode, separation and transposition can be performed even when they are formed integrally. For example, an antenna may be formed in the same layer as the wiring 210, and peeling and transposition may be performed in that state.

In the present embodiment, the non-contact type IDF chip has been described, but any of a contact type IDF chip and a hybrid type IDF chip may be used.

(Embodiment 8)
In this embodiment mode, a structure and a formation method of an antenna are described.

First, the shape and length of the antenna will be described. The number of turns of the antenna that restricts the shape, that is, the length is determined by the communication distance and the frequency of the radio wave. The shape of the antenna can be linear or wound. The antenna is wound in order to ensure the length. The wound antenna provided on the surface of the antenna substrate or article is provided so as to be wound in a rectangular shape or a circular shape from the center to the outside.

Connection terminals are provided at two locations of the antenna. Many connection terminals are provided at both ends of the antenna, but the connection terminals may be provided anywhere, and the arrangement of the connection terminals can be determined in accordance with the connection terminals of the IDF chip. At this time, the connection terminals may be provided so as to be close to each other or may be provided so as to be separated from each other.

Next, a method for manufacturing the antenna will be described with reference to FIGS. In FIG. 9, a case where an antenna wound in a rectangular shape on an antenna substrate is formed will be described. The substrate for the antenna is a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, polyethylene-terephthalate (PET), polyethylene naphthalate (PEN), plastic typified by polyethersulfone (PES), A substrate made of a synthetic resin having flexibility such as acrylic can be used. Since the antenna substrate is preferably thin, a film-like substrate is preferable.

As shown in FIG. 9A, the antenna 101a is formed on one surface 102a of the antenna substrate 102 by a droplet discharge method. The droplet discharge method is a method for selectively discharging (jetting) a droplet (also referred to as a dot) of a composition mixed with a material such as a conductive film or an insulating film. Depending on the method, an inkjet method is used. Also called. In addition to the droplet discharge method, the antenna can be formed by any one of a sputtering method, a printing method, a plating method, a photolithography method, a vapor deposition method using a metal mask, or a combination thereof. For example, the first antenna is formed by any one of a sputtering method, a droplet discharge method, a printing method, a photolithography method, and a vapor deposition method, and a second antenna is formed so as to cover the first antenna by a plating method, A stacked antenna can also be formed. In particular, in the case where an antenna is formed by a droplet discharge method or a printing method, it is not necessary to pattern a conductive film, so that a manufacturing process can be reduced.

As the antenna material, a conductive material such as Ag (silver), Al (aluminum), Au (gold), Cu (copper), or Pt (platinum) can be used. When using Al or Au having relatively high resistance, there is a concern about wiring resistance. However, when the antenna is thick or the antenna formation area is large, the wiring resistance can be reduced by increasing the width of the antenna. Alternatively, a stacked antenna may be used and covered with a low resistance material. For a conductive material such as Cu that is likely to be diffused, an insulating film that functions as a protective film may be formed so as to cover the surface where the antenna is formed or the periphery of Cu.

In this embodiment, Ag mixed in tetradecane as a solvent is dropped from the nozzle 260 to form an antenna. At this time, in order to improve the adhesion of Ag, a base film made of titanium oxide (TiOx) may be formed.

More preferably, pressure can be applied to the formed antenna to improve flatness. As a result, the antenna can be thinned. In addition to the pressurizing means, a heating means may be provided, and the pressurization process and the heat treatment can be performed simultaneously. In particular, when a droplet discharge method is used and heat treatment is required to remove the solvent, the heat treatment can be combined.

Further, an opening (also referred to as a groove) may be formed in the antenna substrate, and the antenna may be formed in the groove. Since the antenna can be formed in the groove, the antenna substrate can be thinned while the antenna can be thickened.

Thereafter, as shown in FIG. 9B, the remaining part of the antenna is formed on the other surface 102b of the antenna substrate by a droplet discharge method. The reason why the antenna is provided on the other surface as described above is that the antenna is provided so as to be wound, and therefore, it is necessary to provide an insulator so that the antennas are not short-circuited. Therefore, when the antenna is not formed on both surfaces of the antenna substrate, a part of the antenna may be formed through the opening provided in the insulator.

In this embodiment mode, an opening 262 is formed in the antenna substrate, and the antennas are connected to each other through the opening.

Next, as shown in FIG. 9C, an opening is formed in order to make the antenna 101b and the IDF chip 100 conductive. In the opening, the connection terminal of the antenna and the connection terminal of the IDF chip are connected.

This will be described in detail with reference to a cross-sectional view taken along line ij of the antenna substrate 102 shown in the right figure. In the area where the connection terminal of the antenna 101b formed on the other surface is provided, an opening 262 is provided in the antenna substrate. Then, the IDF chip 100 is mounted so as to be connected to the connection terminal of the antenna 101b in the opening.

At this time, the connection terminals of the IDF chip, that is, the bumps 106, and the connection terminals of the antennas 101a and 101b are connected by the anisotropic conductor 123. The anisotropic conductor is a resin in which the conductor 107 is dispersed and has an adhesion function. The conductor is crimped in a region where the connection terminal is provided, and the antennas 101a and 101b and the IDF chip 100 become conductive. In other regions, the conductor does not conduct because a sufficient interval is maintained.

In addition, the opening 262 is filled with the conductor to be conductive, but the opening may be filled with an antenna material, and when the antenna is formed on the other surface, the opening is filled with the antenna material. can do.

Although not shown, after the antenna and the IDF chip are connected, the IDF chip may be covered with an insulating film containing resin or nitrogen in order to protect the IDF chip. In addition, diffusion of impurities into the thin film transistor included in the IDF chip can be prevented by the insulating film.

In this embodiment mode, the case where the connection terminal of the IDF chip is mounted in a so-called face-down manner in which the connection terminal of the IDF chip exists below the IDF chip is described using an anisotropic conductor, but a wire bonding method may be used as a connection means. In this case, it is suitable for mounting with a so-called face-up in which the connection terminal of the IDF chip exists above the IDF chip.

As described above, in the present embodiment, the IDF chip and the antenna substrate are described as being thick for easy understanding, but in actuality, the shape is very thin.

(Embodiment 9)
Since an IDF chip has a certain area and is highly flexible as compared with a chip formed of a silicon wafer, it is necessary to consider a fracture due to bending stress. Therefore, in this embodiment, a state where a business card on which the IDF chip is mounted is bent will be described.

FIG. 11A shows the business card 120 bent in the direction 280 of the arrow. In general, since a thin film article is easily bent or bent in the long axis direction, a case of bending in the long axis direction will be described in this embodiment.

The state of the IDF chip 100 at this time is shown in FIG. The IDF chip includes a plurality of thin film transistors 230, and the thin film transistors are arranged so that a carrier moving direction 281 and an arrow direction (bending direction) 280 are perpendicular to each other. That is, the source region 230 (s), the channel formation region 230 (c), and the drain region 230 (d) of the thin film transistor are arranged so as to be perpendicular to the bending direction 280. As a result, destruction and peeling of the thin film transistor due to bending stress can be prevented.

Further, when a crystalline semiconductor film using laser irradiation is used as the semiconductor film, the laser scanning direction 283 is also set to be perpendicular to the bending direction 280. For example, as shown in FIG. 11C, when a laser irradiation region (spot) 282 is scanned in a rectangular shape to crystallize the entire surface, the laser scanning direction 283 is a direction perpendicular to the bending direction 280. .

By bending the IDF chip in such a direction, the IDF chip, particularly the thin film transistor, is not destroyed, and the crystal grain boundaries existing in the carrier moving direction can be reduced as much as possible. As a result, the electrical characteristics of the thin film transistor, in particular, mobility can be improved.

In addition, when the ratio of the area occupied by the patterned semiconductor film in the IDF chip is 5 to 30%, the thin film transistor can be prevented from being broken or peeled off due to bending stress.

In this embodiment, the case where a non-contact type IDF chip is mounted has been described, but either a contact type IDF chip or a hybrid type IDF chip may be used.

(Embodiment 10)
A usage pattern of a business card on which such an IDF chip is mounted will be described.

FIG. 12A shows the flow of information by the business card 120 on which the IDF chip 100 is mounted, the reader / writer device 301, the personal computer 302, and the like. Information on the IDF chip, particularly an e-mail address, can be input to the personal computer via the reader / rider device, and can be confirmed on the display unit 302a. At this time, if the e-mail software is activated, the e-mail can be sent immediately.

Further, the IDF chip information may be input via the reader / writer device while the business card management software is activated. Conventionally, it is possible to simplify management of time-consuming business cards.

In addition, corporate advertising information, such as a home page address, may be entered into the personal computer. At this time, the Internet software is activated.

Further, a telephone 303 may be used instead of the personal computer. In this case, the telephone number recorded on the business card 120 can be input to the telephone 303 via the reader / writer device 301 and can be confirmed on the display unit 303a.

Further, both the personal computer 302 and the telephone 303 can be connected to the reader / writer device 301.

Further, information on a business card can be read by a portable electronic device having a function of a reader / writer device, typically a cellular phone 304 or a PDA. For example, the coil functioning as the antenna 304b of the mobile phone 304 is designed so as to also serve as the antenna of the reader / writer device. In the mobile phone, the telephone number and the e-mail address recorded on the business card can be input and can be confirmed on the display unit 304a.

By reading the information recorded on the IDF chip, it is possible to prevent an input error compared to the case where the business card information is input manually. Moreover, management of a large number of business cards can be simplified.

FIG. 12B shows a circuit configuration of the IDF chip and the reader / writer device.

First, the IDF chip 100 includes an antenna coil 401 and a capacitor 402, and includes a demodulation circuit 403, a modulation circuit 404, a rectifier circuit 405, a microprocessor 406, a memory 407, and a switch 408 for supplying a load to the antenna coil 401. Have. These circuits and the microprocessor can be formed by a thin film integrated circuit. Note that the memory 407 is not limited to one, and may be a plurality.

Further, the reader / writer device 410 includes an antenna coil 411, a modulation circuit 412, and an oscillation means 413, which can create a transmission signal. The reader / writer device 410 has a detection / demodulation circuit 414 that detects, amplifies, and demodulates the received signal. Since the received signal from the IDF chip is very weak, it may be separated and amplified by a filter or the like. These received signals are sent to the gate ASIC 415.

Data input to the gate ASIC is sent to the microprocessor 416 for processing. Then, as necessary, signals are exchanged with the microprocessor 416 and the memory 417 to achieve predetermined arithmetic processing. The memory 417 stores programs and data used in the microprocessor 416, and can also be used as a work area during arithmetic processing. Thereafter, signals can be exchanged with the microprocessor 416 and the signal interface 419. A power supply unit 418 is provided for mutual exchange of these signals.

The microprocessor 416, the memory 417, and the signal interface 419 can be provided in a personal computer or the telephone itself.

An electronic device such as a mobile phone that also functions as a reader / writer device includes an antenna coil 411, a modulation circuit 412, an oscillation means 413, a detection demodulation circuit 414, a gate ASIC 415, a microprocessor 416, a memory 417, a power supply unit 418, a signal An interface 419 is included.

Of course, the above-described circuit or the like can be formed in a personal computer or a telephone so that it also functions as a reader / writer device.

In the IDF chip, a signal transmitted as a radio wave from the gate ASIC 415 via the modulation circuit 412 is converted into an AC electrical signal by electromagnetic induction in the antenna coil 401. The demodulation circuit 403 demodulates the alternating electrical signal and transmits it to the microprocessor 406. The rectifier circuit 405 generates a power supply voltage using an alternating electrical signal and supplies the power supply voltage to the microprocessor 406.

The microprocessor 406 performs various arithmetic processes according to the input signal. The memory 407 stores programs and data used in the microprocessor 406, and can also be used as a work area during arithmetic processing. The signal sent from the microprocessor 406 to the modulation circuit 404 is modulated into an alternating electrical signal. The switch 408 can apply a load to the antenna coil 401 in accordance with an AC electrical signal from the modulation circuit 404. The reader / writer device receives the load applied to the antenna coil 401 by radio waves, and as a result, can read a signal from the microprocessor 406.

Note that the circuit structure of the IDF chip and the reader / writer device illustrated in FIG. 12B is only one embodiment of the present invention, and the present invention is not limited to the above structure. The signal transmission method is not limited to the electromagnetic coupling method shown in this embodiment mode, and an electromagnetic induction method, a microwave method, and other transmission methods may be used. Further, for example, a function such as GPS may be mounted on the IDF chip of the present invention.

(Embodiment 11)
In this embodiment mode, a usage form of a publication in which an IDF chip is mounted, for example, a newspaper will be described.

An IDF chip on which newspaper information is written is mounted on a part of the newspaper. Information on the IDF chip is input to a portable electronic device such as a mobile phone. At this time, information may be input using a dedicated reader / writer device, or information may be input by the reader / writer function of the mobile phone as described above.

In this way, information input to the portable electronic device can read newspaper information on the display unit without spreading newspaper in a narrow vehicle such as a train. For example, information such as a novel or a magazine can be input to the portable electronic device.

Even when an IDF chip is mounted on a publication, the thin film, light weight, resistance to breakage, translucency, and the like are exhibited. Therefore, the durability of the IDF chip can be improved, and the design of the publication is not impaired.

As described above, by mounting an IDF chip on a publication or the like, it is easy to digitize written information, and high added value and high functionality can be achieved.

As described above, the IDF chip can develop various usage patterns.

It is the figure which showed the preparation process of the business card carrying IDF chip. It is the figure which showed the preparation process of the business card carrying IDF chip. It is sectional drawing of the business card carrying IDF chip. It is the figure which showed the business card carrying IDF chip. It is the figure which showed the business card carrying IDF chip. It is the figure which showed the business card carrying IDF chip. It is the figure which showed the business card carrying IDF chip. It is a figure showing a manufacturing process of an IDF chip. It is a figure showing a manufacturing process of an antenna. It is the figure which showed the business card carrying IDF chip. It is the figure which showed the state which bent the business card carrying IDF chip. It is the figure which showed the usage pattern etc. of the business card carrying IDF chip.

Claims (7)

A thin film integrated circuit provided on one surface of the substrate;
A first antenna provided on one surface of the substrate;
A second antenna provided on the other surface of the substrate,
In the thin film integrated circuit, information described in a film-like article is recorded,
The thin film integrated circuit and the first antenna are electrically connected on one surface of the substrate,
The thin film integrated circuit and the second antenna are electrically connected through an opening provided in the substrate,
The first antenna and the second antenna are electrically connected via a slit-like opening provided in the substrate in a region where the first antenna and the second antenna intersect when viewed from above. Connected,
The thin film integrated circuit has a semiconductor film having a thickness of 40 nm to 170 nm,
The semiconductor film has a source, a drain, and a channel formation region,
The source, drain, and channel forming region are provided so as to be perpendicular to a direction in which the film-like article is bent,
The film-like article, wherein the thin film integrated circuit and the first antenna are mounted inside the film-like article. A thin film integrated circuit provided on one surface of the substrate;
A first antenna provided on one surface of the substrate;
A second antenna provided on the other surface of the substrate,
In the thin film integrated circuit, information described in a film-like article is recorded,
The thin film integrated circuit and the first antenna are electrically connected on one surface of the substrate,
The thin film integrated circuit and the second antenna are electrically connected through an opening provided in the substrate,
The first antenna and the second antenna are electrically connected via a slit-like opening provided in the substrate in a region where the first antenna and the second antenna intersect when viewed from above. Connected,
The thin film integrated circuit has a semiconductor film having a thickness of 40 nm to 170 nm,
The semiconductor film has a source, a drain, and a channel formation region,
The source, drain, and channel forming region are provided so as to be perpendicular to a direction in which the film-like article is bent,
The film-like article, wherein the thin film integrated circuit is mounted inside the film-like article, and the first antenna is mounted on a surface of the film-like article. A thin film integrated circuit provided on one surface of the substrate;
A first antenna provided on one surface of the substrate;
A second antenna provided on the other surface of the substrate,
In the thin film integrated circuit, information described in a film-like article is recorded,
The thin film integrated circuit and the first antenna are electrically connected on one surface of the substrate,
The thin film integrated circuit and the second antenna are electrically connected through an opening provided in the substrate,
The first antenna and the second antenna are electrically connected via a slit-like opening provided in the substrate in a region where the first antenna and the second antenna intersect when viewed from above. Connected,
The thin film integrated circuit has a semiconductor film having a thickness of 40 nm to 170 nm,
The semiconductor film has a source, a drain, and a channel formation region,
The source, drain, and channel forming region are provided so as to be perpendicular to a direction in which the film-like article is bent,
The film-like article, wherein the thin film integrated circuit and the first antenna are mounted on a surface of the film-like article. A thin film integrated circuit provided on one surface of the substrate;
A first antenna provided on one surface of the substrate;
A second antenna provided on the other surface of the substrate,
In the thin film integrated circuit, information described in a film-like article is recorded,
The thin film integrated circuit and the first antenna are electrically connected on one surface of the substrate,
The thin film integrated circuit and the second antenna are electrically connected through an opening provided in the substrate,
The first antenna and the second antenna are electrically connected via a slit-like opening provided in the substrate in a region where the first antenna and the second antenna intersect when viewed from above. Connected,
The thin film integrated circuit has a semiconductor film having a thickness of 40 nm to 170 nm,
The semiconductor film has a source, a drain, and a channel formation region,
The source, drain, and channel forming region are provided so as to be perpendicular to a direction in which the film-like article is bent,
The film-shaped article, wherein the thin film integrated circuit is mounted on a surface of the film-shaped article, and the first antenna is mounted inside the film-shaped article. In any one of Claims 1 thru | or 4,
The film-like article, wherein a hydrogen concentration of the semiconductor film is 1 × 10 ^{19 to} 5 × 10 ²⁰ / cm ³ . In any one of Claims 1 thru | or 5,
The film-like article, wherein the thin film integrated circuit has translucency. In any one of Claims 1 thru | or 6 ,
In addition to the thin film integrated circuit, a plurality of second thin film integrated circuits are mounted,
Any one of the plurality of second thin film integrated circuits is characterized in that the second thin film integrated circuit and an antenna are integrally formed.

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