JP4718717B2 - 携帯用情報機器 - Google Patents

携帯用情報機器 Download PDF

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Publication number
JP4718717B2
JP4718717B2 JP2001139282A JP2001139282A JP4718717B2 JP 4718717 B2 JP4718717 B2 JP 4718717B2 JP 2001139282 A JP2001139282 A JP 2001139282A JP 2001139282 A JP2001139282 A JP 2001139282A JP 4718717 B2 JP4718717 B2 JP 4718717B2
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JP
Japan
Prior art keywords
insulating film
region
portable information
gate
electrode
Prior art date
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Expired - Fee Related
Application number
JP2001139282A
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English (en)
Japanese (ja)
Other versions
JP2002082353A (ja
JP2002082353A5 (enExample
Inventor
舜平 山崎
英臣 須沢
幸治 小野
徹 高山
肇 木村
潤 小山
邦子 脇田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001139282A priority Critical patent/JP4718717B2/ja
Publication of JP2002082353A publication Critical patent/JP2002082353A/ja
Publication of JP2002082353A5 publication Critical patent/JP2002082353A5/ja
Application granted granted Critical
Publication of JP4718717B2 publication Critical patent/JP4718717B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Studio Devices (AREA)
JP2001139282A 2000-05-12 2001-05-09 携帯用情報機器 Expired - Fee Related JP4718717B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001139282A JP4718717B2 (ja) 2000-05-12 2001-05-09 携帯用情報機器

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000139329 2000-05-12
JP2000-139329 2000-05-12
JP2000139329 2000-05-12
JP2001139282A JP4718717B2 (ja) 2000-05-12 2001-05-09 携帯用情報機器

Publications (3)

Publication Number Publication Date
JP2002082353A JP2002082353A (ja) 2002-03-22
JP2002082353A5 JP2002082353A5 (enExample) 2008-05-01
JP4718717B2 true JP4718717B2 (ja) 2011-07-06

Family

ID=26591733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001139282A Expired - Fee Related JP4718717B2 (ja) 2000-05-12 2001-05-09 携帯用情報機器

Country Status (1)

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JP (1) JP4718717B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100862240B1 (ko) * 2002-07-31 2008-10-09 엘지디스플레이 주식회사 반사형 액정표시장치와 그 제조방법
JP2004258367A (ja) * 2003-02-26 2004-09-16 Seiko Epson Corp カラーフィルタ基板、電気光学装置及び電子機器
KR100796608B1 (ko) * 2006-08-11 2008-01-22 삼성에스디아이 주식회사 박막 트랜지스터 어레이 기판의 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2998255B2 (ja) * 1991-04-04 2000-01-11 セイコーエプソン株式会社 薄膜トランジスタ装置及びその製造方法
JP2791435B2 (ja) * 1996-12-24 1998-08-27 株式会社日立製作所 液晶ディスプレイ装置
JPH11274514A (ja) * 1998-01-30 1999-10-08 Samsung Electronics Co Ltd 薄膜トランジスタの製造方法
JP3310615B2 (ja) * 1998-04-17 2002-08-05 シャープ株式会社 アクティブマトリクス型液晶表示装置および画素欠陥修正方法
JP3282582B2 (ja) * 1998-04-21 2002-05-13 日本電気株式会社 トップゲート型薄膜トランジスタ及びその製造方法
JP3478528B2 (ja) * 1998-07-23 2003-12-15 シャープ株式会社 液晶表示装置およびその製造方法
JP2000047189A (ja) * 1998-07-28 2000-02-18 Sharp Corp 液晶表示素子
JP3107055B2 (ja) * 1998-09-03 2000-11-06 日本電気株式会社 アクティブマトリクス基板
JP4712198B2 (ja) * 2000-02-01 2011-06-29 株式会社半導体エネルギー研究所 表示装置の作製方法

Also Published As

Publication number Publication date
JP2002082353A (ja) 2002-03-22

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