JP4703862B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4703862B2
JP4703862B2 JP2001020139A JP2001020139A JP4703862B2 JP 4703862 B2 JP4703862 B2 JP 4703862B2 JP 2001020139 A JP2001020139 A JP 2001020139A JP 2001020139 A JP2001020139 A JP 2001020139A JP 4703862 B2 JP4703862 B2 JP 4703862B2
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Japan
Prior art keywords
film
insulating film
tft
silicon oxynitride
plasma
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Expired - Fee Related
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JP2001020139A
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Japanese (ja)
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JP2001291872A (ja
JP2001291872A5 (enExample
Inventor
充弘 一條
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001020139A priority Critical patent/JP4703862B2/ja
Publication of JP2001291872A publication Critical patent/JP2001291872A/ja
Publication of JP2001291872A5 publication Critical patent/JP2001291872A5/ja
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Publication of JP4703862B2 publication Critical patent/JP4703862B2/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2001020139A 2000-02-03 2001-01-29 半導体装置の作製方法 Expired - Fee Related JP4703862B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001020139A JP4703862B2 (ja) 2000-02-03 2001-01-29 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-26878 2000-02-03
JP2000026878 2000-02-03
JP2000026878 2000-02-03
JP2001020139A JP4703862B2 (ja) 2000-02-03 2001-01-29 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001291872A JP2001291872A (ja) 2001-10-19
JP2001291872A5 JP2001291872A5 (enExample) 2008-01-31
JP4703862B2 true JP4703862B2 (ja) 2011-06-15

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ID=26584833

Family Applications (1)

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JP2001020139A Expired - Fee Related JP4703862B2 (ja) 2000-02-03 2001-01-29 半導体装置の作製方法

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JP (1) JP4703862B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200428470A (en) 2003-06-05 2004-12-16 Semiconductor Leading Edge Tec Method for manufacturing semiconductor device
US7855153B2 (en) 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2506539B2 (ja) * 1992-02-27 1996-06-12 株式会社ジーティシー 絶縁膜の形成方法

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Publication number Publication date
JP2001291872A (ja) 2001-10-19

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