JP2001291872A5 - - Google Patents
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- Publication number
- JP2001291872A5 JP2001291872A5 JP2001020139A JP2001020139A JP2001291872A5 JP 2001291872 A5 JP2001291872 A5 JP 2001291872A5 JP 2001020139 A JP2001020139 A JP 2001020139A JP 2001020139 A JP2001020139 A JP 2001020139A JP 2001291872 A5 JP2001291872 A5 JP 2001291872A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001020139A JP4703862B2 (ja) | 2000-02-03 | 2001-01-29 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-26878 | 2000-02-03 | ||
| JP2000026878 | 2000-02-03 | ||
| JP2000026878 | 2000-02-03 | ||
| JP2001020139A JP4703862B2 (ja) | 2000-02-03 | 2001-01-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001291872A JP2001291872A (ja) | 2001-10-19 |
| JP2001291872A5 true JP2001291872A5 (enExample) | 2008-01-31 |
| JP4703862B2 JP4703862B2 (ja) | 2011-06-15 |
Family
ID=26584833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001020139A Expired - Fee Related JP4703862B2 (ja) | 2000-02-03 | 2001-01-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4703862B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200428470A (en) | 2003-06-05 | 2004-12-16 | Semiconductor Leading Edge Tec | Method for manufacturing semiconductor device |
| US7855153B2 (en) | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2506539B2 (ja) * | 1992-02-27 | 1996-06-12 | 株式会社ジーティシー | 絶縁膜の形成方法 |
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2001
- 2001-01-29 JP JP2001020139A patent/JP4703862B2/ja not_active Expired - Fee Related