JP4683761B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4683761B2
JP4683761B2 JP2001135737A JP2001135737A JP4683761B2 JP 4683761 B2 JP4683761 B2 JP 4683761B2 JP 2001135737 A JP2001135737 A JP 2001135737A JP 2001135737 A JP2001135737 A JP 2001135737A JP 4683761 B2 JP4683761 B2 JP 4683761B2
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JP
Japan
Prior art keywords
film
region
base insulating
thickness
insulating film
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Expired - Fee Related
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JP2001135737A
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English (en)
Japanese (ja)
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JP2002033330A (ja
JP2002033330A5 (enrdf_load_stackoverflow
Inventor
健司 笠原
律子 河崎
久 大谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001135737A priority Critical patent/JP4683761B2/ja
Publication of JP2002033330A publication Critical patent/JP2002033330A/ja
Publication of JP2002033330A5 publication Critical patent/JP2002033330A5/ja
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Publication of JP4683761B2 publication Critical patent/JP4683761B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001135737A 2000-05-12 2001-05-07 半導体装置の作製方法 Expired - Fee Related JP4683761B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001135737A JP4683761B2 (ja) 2000-05-12 2001-05-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000139844 2000-05-12
JP2000-139844 2000-05-12
JP2001135737A JP4683761B2 (ja) 2000-05-12 2001-05-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002033330A JP2002033330A (ja) 2002-01-31
JP2002033330A5 JP2002033330A5 (enrdf_load_stackoverflow) 2008-05-22
JP4683761B2 true JP4683761B2 (ja) 2011-05-18

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Family Applications (1)

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JP2001135737A Expired - Fee Related JP4683761B2 (ja) 2000-05-12 2001-05-07 半導体装置の作製方法

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JP (1) JP4683761B2 (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4627135B2 (ja) * 2001-12-28 2011-02-09 株式会社半導体エネルギー研究所 半導体装置の生産方法
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
TW200302511A (en) 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4312466B2 (ja) * 2002-01-28 2009-08-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI261358B (en) 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
CN100350617C (zh) 2002-03-05 2007-11-21 株式会社半导体能源研究所 半导体元件和使用半导体元件的半导体装置
JP4421202B2 (ja) * 2002-03-26 2010-02-24 株式会社半導体エネルギー研究所 表示装置の作製方法
US6906343B2 (en) 2002-03-26 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP4503246B2 (ja) * 2002-06-25 2010-07-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100507344B1 (ko) 2003-04-17 2005-08-08 삼성에스디아이 주식회사 박막 트랜지스터 및 그의 제조 방법
KR100731752B1 (ko) 2005-09-07 2007-06-22 삼성에스디아이 주식회사 박막트랜지스터
JP5143411B2 (ja) * 2006-12-14 2013-02-13 三菱電機株式会社 薄膜Ｓｉ素子の製造方法
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI567985B (zh) * 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN103493186A (zh) 2011-11-29 2014-01-01 松下电器产业株式会社 薄膜晶体管阵列的制造方法、薄膜晶体管阵列及显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6331108A (ja) * 1986-07-25 1988-02-09 Citizen Watch Co Ltd Ｓｏｉ素子の製造方法
JP3047424B2 (ja) * 1990-04-02 2000-05-29 セイコーエプソン株式会社 半導体装置の製造方法
JP3150840B2 (ja) * 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH08293464A (ja) * 1995-04-20 1996-11-05 Sharp Corp 半導体基板及び半導体装置の製造方法
JP4637333B2 (ja) * 1999-08-18 2011-02-23 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2002033330A (ja) 2002-01-31

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