JP4677044B2 - 非冷却ｌｗｉｒ検出器に組み合わされた可視すなわちｓｗｉｒ検出器を有するデュアル・バンド撮像装置 - Google Patents

非冷却ｌｗｉｒ検出器に組み合わされた可視すなわちｓｗｉｒ検出器を有するデュアル・バンド撮像装置 Download PDF

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JP4677044B2
JP4677044B2 JP2009534620A JP2009534620A JP4677044B2 JP 4677044 B2 JP4677044 B2 JP 4677044B2 JP 2009534620 A JP2009534620 A JP 2009534620A JP 2009534620 A JP2009534620 A JP 2009534620A JP 4677044 B2 JP4677044 B2 JP 4677044B2
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radiation
microbolometer
roic
dual band
detector
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JP2010507806A (ja
JP2010507806A5 (https=
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ホフマン、アラン、ダブリュー．
レイ、マイケル
ボーンフロイント、リチャード、イー．
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Raytheon Co
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Raytheon Co
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G59/00—De-stacking of articles
    • B65G59/08—De-stacking after preliminary tilting of the stack
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2201/00—Indexing codes relating to handling devices, e.g. conveyors, characterised by the type of product or load being conveyed or handled
    • B65G2201/02—Articles
    • B65G2201/0267—Pallets

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Specific Conveyance Elements (AREA)
JP2009534620A 2006-10-24 2007-10-23 非冷却ｌｗｉｒ検出器に組み合わされた可視すなわちｓｗｉｒ検出器を有するデュアル・バンド撮像装置 Active JP4677044B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/586,323 US7629582B2 (en) 2006-10-24 2006-10-24 Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors
PCT/US2007/022461 WO2008127297A2 (en) 2006-10-24 2007-10-23 Dual band imager with visible or swir detectors combined with uncooled lwir detectors

Publications (3)

Publication Number Publication Date
JP2010507806A JP2010507806A (ja) 2010-03-11
JP2010507806A5 JP2010507806A5 (https=) 2010-07-15
JP4677044B2 true JP4677044B2 (ja) 2011-04-27

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Country Link
US (1) US7629582B2 (https=)
EP (1) EP2084501B1 (https=)
JP (1) JP4677044B2 (https=)
IL (1) IL198218A (https=)
WO (1) WO2008127297A2 (https=)

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KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
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Publication number Publication date
JP2010507806A (ja) 2010-03-11
WO2008127297A3 (en) 2008-12-18
US20080093554A1 (en) 2008-04-24
IL198218A0 (en) 2009-12-24
EP2084501B1 (en) 2016-09-07
EP2084501A2 (en) 2009-08-05
IL198218A (en) 2012-06-28
WO2008127297A2 (en) 2008-10-23
US7629582B2 (en) 2009-12-08

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