JP4664140B2 - レーザ加工方法 - Google Patents
レーザ加工方法 Download PDFInfo
- Publication number
- JP4664140B2 JP4664140B2 JP2005209073A JP2005209073A JP4664140B2 JP 4664140 B2 JP4664140 B2 JP 4664140B2 JP 2005209073 A JP2005209073 A JP 2005209073A JP 2005209073 A JP2005209073 A JP 2005209073A JP 4664140 B2 JP4664140 B2 JP 4664140B2
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- region
- laser
- crack
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005209073A JP4664140B2 (ja) | 2000-09-13 | 2005-07-19 | レーザ加工方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000278306 | 2000-09-13 | ||
| JP2005209073A JP4664140B2 (ja) | 2000-09-13 | 2005-07-19 | レーザ加工方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004318326A Division JP3751970B2 (ja) | 2000-09-13 | 2004-11-01 | レーザ加工装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006056671A Division JP3867108B2 (ja) | 2000-09-13 | 2006-03-02 | レーザ加工装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005313238A JP2005313238A (ja) | 2005-11-10 |
| JP2005313238A5 JP2005313238A5 (enExample) | 2009-02-19 |
| JP4664140B2 true JP4664140B2 (ja) | 2011-04-06 |
Family
ID=35441202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005209073A Expired - Lifetime JP4664140B2 (ja) | 2000-09-13 | 2005-07-19 | レーザ加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4664140B2 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165850A (ja) | 2005-11-16 | 2007-06-28 | Denso Corp | ウェハおよびウェハの分断方法 |
| JP4655915B2 (ja) * | 2005-12-15 | 2011-03-23 | セイコーエプソン株式会社 | 層状基板の分割方法 |
| JP5232375B2 (ja) * | 2006-10-13 | 2013-07-10 | アイシン精機株式会社 | 半導体発光素子の分離方法 |
| JP5269356B2 (ja) * | 2006-07-03 | 2013-08-21 | 浜松ホトニクス株式会社 | レーザ加工方法 |
| US7897487B2 (en) * | 2006-07-03 | 2011-03-01 | Hamamatsu Photonics K.K. | Laser processing method and chip |
| JP2011223041A (ja) * | 2011-08-05 | 2011-11-04 | Toyoda Gosei Co Ltd | 半導体発光素子の分離方法 |
| JP6189066B2 (ja) * | 2013-03-27 | 2017-08-30 | 株式会社ディスコ | ウエーハの加工方法 |
| JP7467208B2 (ja) * | 2020-04-06 | 2024-04-15 | 浜松ホトニクス株式会社 | レーザ加工装置、及び、レーザ加工方法 |
| CN112518141B (zh) * | 2020-11-24 | 2022-07-15 | 无锡光导精密科技有限公司 | 一种激光诱导切割方法及装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0688149B2 (ja) * | 1987-03-04 | 1994-11-09 | 株式会社半導体エネルギ−研究所 | 光加工方法 |
| JP3660741B2 (ja) * | 1996-03-22 | 2005-06-15 | 株式会社日立製作所 | 電子回路装置の製造方法 |
| JP3532100B2 (ja) * | 1997-12-03 | 2004-05-31 | 日本碍子株式会社 | レーザ割断方法 |
| JP3604550B2 (ja) * | 1997-12-16 | 2004-12-22 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
| JP2000015467A (ja) * | 1998-07-01 | 2000-01-18 | Shin Meiwa Ind Co Ltd | 光による被加工材の加工方法および加工装置 |
| JP2000219528A (ja) * | 1999-01-18 | 2000-08-08 | Samsung Sdi Co Ltd | ガラス基板の切断方法及びその装置 |
-
2005
- 2005-07-19 JP JP2005209073A patent/JP4664140B2/ja not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
| US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
| US11219966B1 (en) | 2018-12-29 | 2022-01-11 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
| US11826846B2 (en) | 2018-12-29 | 2023-11-28 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
| US11901181B2 (en) | 2018-12-29 | 2024-02-13 | Wolfspeed, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
| US11911842B2 (en) | 2018-12-29 | 2024-02-27 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
| US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| US11034056B2 (en) | 2019-05-17 | 2021-06-15 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
| US11654596B2 (en) | 2019-05-17 | 2023-05-23 | Wolfspeed, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005313238A (ja) | 2005-11-10 |
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