JP4663981B2 - モノリシックフリップチップ内の複数の半導体素子 - Google Patents
モノリシックフリップチップ内の複数の半導体素子 Download PDFInfo
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- JP4663981B2 JP4663981B2 JP2003533348A JP2003533348A JP4663981B2 JP 4663981 B2 JP4663981 B2 JP 4663981B2 JP 2003533348 A JP2003533348 A JP 2003533348A JP 2003533348 A JP2003533348 A JP 2003533348A JP 4663981 B2 JP4663981 B2 JP 4663981B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 5
- 230000001360 synchronised effect Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- JCRJMSQFBRGSSX-UHFFFAOYSA-L copper;azane;carbonate Chemical compound N.[Cu+2].[O-]C([O-])=O JCRJMSQFBRGSSX-UHFFFAOYSA-L 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Description
Claims (9)
- 集積フリップチップ構造体であって、
1つの共通の半導体チップと、
前記半導体チップの基板片面の表面上に形成され、互いに横方向に離隔されると共に電気的に絶縁された、ソース領域、ドレイン領域、ゲート領域をそれぞれ有する第1および第2半導体素子と
前記第1半導体素子の前記ドレイン領域上に形成された、所定のパターン形状を有するドレイン接点と、
前記第2半導体素子の前記ソース領域上に形成された、所定のパターン形状を有するソース接点と、
前記第1半導体素子の前記ソース領域と前記第2半導体素子の前記ドレイン領域との両方に接続された、所定のパターン形状を有する接点と
を具え、
前記第1および第2半導体素子は、相互接続によって、少なくとも、
前記第1半導体素子の前記ドレイン接点上に形成された第1の端子と、
前記第2半導体素子の前記ソース接点上に形成された第2の端子と、
前記第1半導体素子と前記第2半導体素子との両方に接続された接点上に形成された第3の端子と
を有し、
前記第1の端子、前記第2の端子、および前記第3の端子は、前記半導体チップの基板
片面上で配線された
ことを特徴とする集積フリップチップ構造体。 - 前記第1および第2半導体素子は、前記半導体チップの基板表面に形成された分離トレンチによって、互いに横方向に離隔されると共に互いに電気的に絶縁されたことを特徴とする請求項1記載の集積フリップチップ構造体。
- 前記第1および第2半導体素子は、それぞれ、ソース、ドレイン、ゲート領域を有するMOSFET素子であり、
前記第1半導体素子の前記ドレイン領域に接続された第1の端子と、
前記第2半導体素子の前記ソース領域に接続された第2の端子と、
前記第1半導体素子のソース領域と前記第2半導体素子のドレイン領域との両方に接続された第3の端子と
前記第1および第2半導体素子のゲート領域にそれぞれ接続された第4および第5の端子と
の5つの端子を有することを特徴とする請求項1又は2記載の集積フリップチップ構造体。 - 前記各端子は、ボール接点を含むことを特徴とする請求項3記載の集積フリップチップ構造体。
- 前記各半導体素子は、同期バックコンバータ回路内で直接に接続できることを特徴とする請求項1記載の集積フリップチップ構造体。
- 前記各接続端子は、集積構造を受ける支持基板上に離隔されたメタライズパターンを含むことを特徴とする請求項1記載の集積フリップチップ構造体。
- 前記チップの表面とは反対側の面は、銅ヒートシンク層を有し、該ヒートシンク層は、
該チップが支持基板上に実装されるとき、該チップの冷却を改善するためのヒートシンクフィンを画定するようにパターン形成されていることを特徴とする請求項1記載の集積フリップチップ構造体。 - 前記チップの表面とは反対側の面は、銅ヒートシンク層を有し、該銅ヒートシンク層の外面上に高熱放射率層を有することを特徴とする請求項1記載の集積フリップチップ構造体。
- 前記高放射率層は、黒色酸化物であることを特徴とする請求項8記載の集積フリップチップ構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32666701P | 2001-10-03 | 2001-10-03 | |
US10/260,148 US6894397B2 (en) | 2001-10-03 | 2002-09-27 | Plural semiconductor devices in monolithic flip chip |
PCT/US2002/031466 WO2003030258A1 (en) | 2001-10-03 | 2002-10-02 | Plural semiconductor devices in monolithic flip chip |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005505924A JP2005505924A (ja) | 2005-02-24 |
JP4663981B2 true JP4663981B2 (ja) | 2011-04-06 |
Family
ID=26947756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003533348A Expired - Fee Related JP4663981B2 (ja) | 2001-10-03 | 2002-10-02 | モノリシックフリップチップ内の複数の半導体素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6894397B2 (ja) |
JP (1) | JP4663981B2 (ja) |
CN (1) | CN100365807C (ja) |
DE (1) | DE10297300B4 (ja) |
TW (1) | TWI223881B (ja) |
WO (1) | WO2003030258A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9520490B2 (en) | 2013-12-03 | 2016-12-13 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1723601A (zh) * | 2002-12-10 | 2006-01-18 | 皇家飞利浦电子股份有限公司 | 集成的半桥功率电路 |
US6989572B2 (en) * | 2003-07-09 | 2006-01-24 | Semiconductor Components Industries, L.L.C. | Symmetrical high frequency SCR structure |
KR100712837B1 (ko) * | 2004-04-29 | 2007-05-02 | 엘지전자 주식회사 | 히트 싱크 및 그 표면처리방법 |
US7501702B2 (en) * | 2004-06-24 | 2009-03-10 | Fairchild Semiconductor Corporation | Integrated transistor module and method of fabricating same |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
TWI275342B (en) * | 2005-07-29 | 2007-03-01 | Delta Electronics Inc | Method for increasing heat-dissipating efficiency of a heat-dissipating device and the structure thereof |
JP2008235788A (ja) * | 2007-03-23 | 2008-10-02 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
US7872350B2 (en) * | 2007-04-10 | 2011-01-18 | Qimonda Ag | Multi-chip module |
US9029866B2 (en) | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
CA2769940C (en) * | 2009-08-04 | 2016-04-26 | Gan Systems Inc. | Island matrixed gallium nitride microwave and power switching transistors |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
US9306056B2 (en) * | 2009-10-30 | 2016-04-05 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
US8604525B2 (en) | 2009-11-02 | 2013-12-10 | Vishay-Siliconix | Transistor structure with feed-through source-to-substrate contact |
CN102893392B (zh) * | 2010-04-13 | 2015-08-05 | Gan系统公司 | 采用孤岛拓扑结构的高密度氮化镓器件 |
US8487371B2 (en) | 2011-03-29 | 2013-07-16 | Fairchild Semiconductor Corporation | Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same |
US9012990B2 (en) * | 2012-10-17 | 2015-04-21 | International Rectifier Corporation | Surface mountable power components |
EP2871673A1 (en) * | 2013-11-06 | 2015-05-13 | Nxp B.V. | Semiconductor device |
EP2871672B1 (en) | 2013-11-06 | 2018-09-26 | Nxp B.V. | Semiconductor device |
EP2887387A1 (en) * | 2013-12-20 | 2015-06-24 | Nxp B.V. | Semiconductor device and associated method |
US9425304B2 (en) | 2014-08-21 | 2016-08-23 | Vishay-Siliconix | Transistor structure with improved unclamped inductive switching immunity |
KR101607259B1 (ko) | 2014-12-23 | 2016-03-29 | 전자부품연구원 | 수동소자 및 그 제조방법 |
EP3761357A1 (en) * | 2019-07-04 | 2021-01-06 | Infineon Technologies Austria AG | Semiconductor device |
CN116960078A (zh) * | 2023-09-21 | 2023-10-27 | 荣耀终端有限公司 | 芯片及电子设备 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US34158A (en) * | 1862-01-14 | Improvement in machines for filling wagon-ruts on highways | ||
US4631570A (en) * | 1984-07-03 | 1986-12-23 | Motorola, Inc. | Integrated circuit having buried oxide isolation and low resistivity substrate for power supply interconnection |
US4970579A (en) * | 1988-09-21 | 1990-11-13 | International Business Machines Corp. | Integrated circuit package with improved cooling means |
US5578869A (en) * | 1994-03-29 | 1996-11-26 | Olin Corporation | Components for housing an integrated circuit device |
US5753529A (en) * | 1994-05-05 | 1998-05-19 | Siliconix Incorporated | Surface mount and flip chip technology for total integrated circuit isolation |
US5629835A (en) * | 1994-07-19 | 1997-05-13 | Olin Corporation | Metal ball grid array package with improved thermal conductivity |
US5578841A (en) * | 1995-12-18 | 1996-11-26 | Motorola, Inc. | Vertical MOSFET device having frontside and backside contacts |
US5729052A (en) * | 1996-06-20 | 1998-03-17 | International Business Machines Corporation | Integrated ULSI heatsink |
US6075279A (en) * | 1996-06-26 | 2000-06-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
US5990552A (en) * | 1997-02-07 | 1999-11-23 | Intel Corporation | Apparatus for attaching a heat sink to the back side of a flip chip package |
US6215290B1 (en) * | 1999-11-15 | 2001-04-10 | Semtech Corporation | Multi-phase and multi-module power supplies with balanced current between phases and modules |
KR100699552B1 (ko) * | 2000-02-10 | 2007-03-26 | 인터내쇼널 렉티파이어 코포레이션 | 단일면 상에 돌출 접촉부를 갖는 수직 전도성의 플립칩디바이스 |
-
2002
- 2002-09-27 US US10/260,148 patent/US6894397B2/en not_active Expired - Lifetime
- 2002-10-02 JP JP2003533348A patent/JP4663981B2/ja not_active Expired - Fee Related
- 2002-10-02 DE DE10297300T patent/DE10297300B4/de not_active Expired - Fee Related
- 2002-10-02 CN CNB02819568XA patent/CN100365807C/zh not_active Expired - Fee Related
- 2002-10-02 TW TW091122727A patent/TWI223881B/zh not_active IP Right Cessation
- 2002-10-02 WO PCT/US2002/031466 patent/WO2003030258A1/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9520490B2 (en) | 2013-12-03 | 2016-12-13 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
CN1565057A (zh) | 2005-01-12 |
JP2005505924A (ja) | 2005-02-24 |
TWI223881B (en) | 2004-11-11 |
WO2003030258A1 (en) | 2003-04-10 |
DE10297300T5 (de) | 2004-11-04 |
US20030062622A1 (en) | 2003-04-03 |
US6894397B2 (en) | 2005-05-17 |
DE10297300B4 (de) | 2011-09-15 |
CN100365807C (zh) | 2008-01-30 |
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