JP4659301B2 - レーザ加工方法 - Google Patents

レーザ加工方法 Download PDF

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Publication number
JP4659301B2
JP4659301B2 JP2001277186A JP2001277186A JP4659301B2 JP 4659301 B2 JP4659301 B2 JP 4659301B2 JP 2001277186 A JP2001277186 A JP 2001277186A JP 2001277186 A JP2001277186 A JP 2001277186A JP 4659301 B2 JP4659301 B2 JP 4659301B2
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Japan
Prior art keywords
workpiece
region
laser
modified region
laser beam
Prior art date
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Expired - Lifetime
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JP2001277186A
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English (en)
Japanese (ja)
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JP2003088976A5 (enExample
JP2003088976A (ja
Inventor
文嗣 福世
憲志 福満
直己 内山
敏光 和久田
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2001277186A priority Critical patent/JP4659301B2/ja
Priority to TW092105294A priority patent/TWI296554B/zh
Publication of JP2003088976A publication Critical patent/JP2003088976A/ja
Publication of JP2003088976A5 publication Critical patent/JP2003088976A5/ja
Application granted granted Critical
Publication of JP4659301B2 publication Critical patent/JP4659301B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Thermal Sciences (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
JP2001277186A 2001-09-12 2001-09-12 レーザ加工方法 Expired - Lifetime JP4659301B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001277186A JP4659301B2 (ja) 2001-09-12 2001-09-12 レーザ加工方法
TW092105294A TWI296554B (en) 2001-09-12 2003-03-12 Laser processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001277186A JP4659301B2 (ja) 2001-09-12 2001-09-12 レーザ加工方法

Publications (3)

Publication Number Publication Date
JP2003088976A JP2003088976A (ja) 2003-03-25
JP2003088976A5 JP2003088976A5 (enExample) 2009-02-19
JP4659301B2 true JP4659301B2 (ja) 2011-03-30

Family

ID=19101756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001277186A Expired - Lifetime JP4659301B2 (ja) 2001-09-12 2001-09-12 レーザ加工方法

Country Status (2)

Country Link
JP (1) JP4659301B2 (enExample)
TW (1) TWI296554B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US20210233814A1 (en) * 2020-01-24 2021-07-29 Disco Corporation Wafer processing method and wafer processing apparatus

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004012402B3 (de) * 2004-03-13 2005-08-25 Schott Ag Verfahren zum Freiformschneiden von gewölbten Substraten aus sprödbrüchigem Material
DE102004014277A1 (de) * 2004-03-22 2005-10-20 Fraunhofer Ges Forschung Verfahren zum laserthermischen Trennen von Flachgläsern
JP4631044B2 (ja) * 2004-05-26 2011-02-16 国立大学法人北海道大学 レーザ加工方法および装置
US7662668B2 (en) * 2005-11-16 2010-02-16 Denso Corporation Method for separating a semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate
KR20120073249A (ko) 2009-08-28 2012-07-04 코닝 인코포레이티드 화학적으로 강화된 유리 기판으로부터 제품을 레이저 절단하기 위한 방법
JP5862088B2 (ja) * 2011-07-22 2016-02-16 アイシン精機株式会社 レーザによる割断方法、およびレーザ割断装置
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
US10357850B2 (en) 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
KR20150045957A (ko) * 2012-08-21 2015-04-29 아사히 가라스 가부시키가이샤 복합 시트의 절단 방법, 유리 시트의 절단 방법, 복합 시트의 절단편
JP6320261B2 (ja) * 2014-09-26 2018-05-09 株式会社ディスコ ウエーハの加工方法
JP2016129203A (ja) * 2015-01-09 2016-07-14 株式会社ディスコ ウエーハの加工方法
KR101812209B1 (ko) * 2016-02-16 2017-12-26 주식회사 이오테크닉스 레이저 마킹 장치 및 레이저 마킹 방법
JP7217585B2 (ja) * 2017-04-13 2023-02-03 株式会社ディスコ 分割方法
JP7210910B2 (ja) * 2017-08-22 2023-01-24 日本電気硝子株式会社 ガラス物品の製造方法及びガラス物品の製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2810151B2 (ja) * 1989-10-07 1998-10-15 ホーヤ株式会社 レーザマーキング方法
JPH04167985A (ja) * 1990-10-31 1992-06-16 Nagasaki Pref Gov ウェハの割断方法
JP3660741B2 (ja) * 1996-03-22 2005-06-15 株式会社日立製作所 電子回路装置の製造方法
JP3449201B2 (ja) * 1997-11-28 2003-09-22 日亜化学工業株式会社 窒化物半導体素子の製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11826846B2 (en) 2018-12-29 2023-11-28 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11911842B2 (en) 2018-12-29 2024-02-27 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11219966B1 (en) 2018-12-29 2022-01-11 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11901181B2 (en) 2018-12-29 2024-02-13 Wolfspeed, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11034056B2 (en) 2019-05-17 2021-06-15 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11654596B2 (en) 2019-05-17 2023-05-23 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods
KR20210095792A (ko) * 2020-01-24 2021-08-03 가부시기가이샤 디스코 웨이퍼 가공 방법, 및 웨이퍼 가공 장치
US11721584B2 (en) * 2020-01-24 2023-08-08 Disco Corporation Wafer processing method including crushed layer and wafer processing apparatus
US20210233814A1 (en) * 2020-01-24 2021-07-29 Disco Corporation Wafer processing method and wafer processing apparatus
KR102851088B1 (ko) 2020-01-24 2025-08-26 가부시기가이샤 디스코 웨이퍼 가공 방법, 및 웨이퍼 가공 장치

Also Published As

Publication number Publication date
TWI296554B (en) 2008-05-11
TW200417438A (en) 2004-09-16
JP2003088976A (ja) 2003-03-25

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