JP4652830B2 - 収差調整方法、デバイス製造方法及び荷電粒子線露光装置 - Google Patents

収差調整方法、デバイス製造方法及び荷電粒子線露光装置 Download PDF

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Publication number
JP4652830B2
JP4652830B2 JP2005018284A JP2005018284A JP4652830B2 JP 4652830 B2 JP4652830 B2 JP 4652830B2 JP 2005018284 A JP2005018284 A JP 2005018284A JP 2005018284 A JP2005018284 A JP 2005018284A JP 4652830 B2 JP4652830 B2 JP 4652830B2
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Japan
Prior art keywords
aberration
charged particle
particle beam
amounts
exposure apparatus
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Expired - Lifetime
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JP2005018284A
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English (en)
Japanese (ja)
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JP2006210503A5 (enExample
JP2006210503A (ja
Inventor
真人 村木
洋也 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Canon Inc
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Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Canon Inc filed Critical Hitachi High Technologies Corp
Priority to JP2005018284A priority Critical patent/JP4652830B2/ja
Priority to US11/337,444 priority patent/US7230252B2/en
Priority to DE602006020797T priority patent/DE602006020797D1/de
Priority to EP06001640A priority patent/EP1686610B1/en
Publication of JP2006210503A publication Critical patent/JP2006210503A/ja
Publication of JP2006210503A5 publication Critical patent/JP2006210503A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005018284A 2005-01-26 2005-01-26 収差調整方法、デバイス製造方法及び荷電粒子線露光装置 Expired - Lifetime JP4652830B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005018284A JP4652830B2 (ja) 2005-01-26 2005-01-26 収差調整方法、デバイス製造方法及び荷電粒子線露光装置
US11/337,444 US7230252B2 (en) 2005-01-26 2006-01-24 Aberration adjusting method, device fabrication method, and charged particle beam lithography machine
DE602006020797T DE602006020797D1 (de) 2005-01-26 2006-01-26 Verfahren zur Einstellung der Aberrationen eines Apparats für die Teilchenstrahllithographie, Apparat für die Teilchenstrahllithographie, sowie Verfahren zur Herstellung von Produkten mit diesem Apparat
EP06001640A EP1686610B1 (en) 2005-01-26 2006-01-26 Aberration adjusting method, device fabrication method, and charged particle beam lithography machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005018284A JP4652830B2 (ja) 2005-01-26 2005-01-26 収差調整方法、デバイス製造方法及び荷電粒子線露光装置

Publications (3)

Publication Number Publication Date
JP2006210503A JP2006210503A (ja) 2006-08-10
JP2006210503A5 JP2006210503A5 (enExample) 2008-03-06
JP4652830B2 true JP4652830B2 (ja) 2011-03-16

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JP2005018284A Expired - Lifetime JP4652830B2 (ja) 2005-01-26 2005-01-26 収差調整方法、デバイス製造方法及び荷電粒子線露光装置

Country Status (4)

Country Link
US (1) US7230252B2 (enExample)
EP (1) EP1686610B1 (enExample)
JP (1) JP4652830B2 (enExample)
DE (1) DE602006020797D1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1463087B1 (en) * 2003-03-24 2010-06-02 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Charged particle beam device
US8027813B2 (en) * 2004-02-20 2011-09-27 Nikon Precision, Inc. Method and system for reconstructing aberrated image profiles through simulation
JP4657740B2 (ja) * 2005-01-26 2011-03-23 キヤノン株式会社 荷電粒子線光学系用収差測定装置、該収差測定装置を具備する荷電粒子線露光装置及び該装置を用いたデバイス製造方法
US8975599B2 (en) * 2007-05-03 2015-03-10 Asml Netherlands B.V. Image sensor, lithographic apparatus comprising an image sensor and use of an image sensor in a lithographic apparatus
TW201239943A (en) * 2011-03-25 2012-10-01 Canon Kk Drawing apparatus and method of manufacturing article
NL2008310A (en) * 2011-04-05 2012-10-08 Asml Netherlands Bv Lithographic method and assembly.
JP2013042114A (ja) * 2011-07-19 2013-02-28 Canon Inc 描画装置、及び、物品の製造方法
JP5859778B2 (ja) * 2011-09-01 2016-02-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP2013074088A (ja) * 2011-09-28 2013-04-22 Canon Inc 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法
JP2013165234A (ja) * 2012-02-13 2013-08-22 Canon Inc 荷電粒子光学系、荷電粒子線装置、および物品の製造方法
TWI476806B (zh) * 2012-03-29 2015-03-11 Nuflare Technology Inc Charging Particle Beam Mapping Device and Inspection Method for Drawing Data
JP6013089B2 (ja) * 2012-08-30 2016-10-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
US10324379B2 (en) 2015-06-23 2019-06-18 Asml Netherlands B.V. Lithographic apparatus and method
US10157723B2 (en) 2016-08-03 2018-12-18 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and method of adjusting the same
JP6834429B2 (ja) * 2016-08-03 2021-02-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
JP7167750B2 (ja) * 2019-02-08 2022-11-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US20240304413A1 (en) * 2023-03-08 2024-09-12 Ims Nanofabrication Gmbh Optimizing Image Distortion in a Multi Beam Charged Particle Processing Apparatus

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3647128B2 (ja) * 1996-03-04 2005-05-11 キヤノン株式会社 電子ビーム露光装置とその露光方法
DE69738276T2 (de) * 1996-03-04 2008-04-03 Canon K.K. Elektronenstrahl-Belichtungsgerät, Belichtungsverfahren und Verfahren zur Erzeugung eines Objekts
JPH10294255A (ja) * 1997-04-17 1998-11-04 Canon Inc 電子ビーム照明装置、および該電子ビーム照明装置を備えた露光装置
JP2002195913A (ja) * 2000-12-27 2002-07-10 Nikon Corp 収差測定装置及び方法、露光装置、並びにマイクロデバイスの製造方法
TWI220998B (en) 2001-02-13 2004-09-11 Nikon Corp Exposure method, exposure apparatus and manufacture method of the same
JP4436029B2 (ja) * 2001-02-13 2010-03-24 株式会社ニコン 投影光学系の製造方法及び調整方法、露光装置及びその製造方法、デバイス製造方法、並びにコンピュータシステム
JP2002319539A (ja) * 2001-02-13 2002-10-31 Nikon Corp 仕様決定方法及びコンピュータシステム
JP4689081B2 (ja) * 2001-06-06 2011-05-25 キヤノン株式会社 露光装置、調整方法、およびデバイス製造方法
WO2003032351A2 (en) * 2001-10-10 2003-04-17 Applied Materials Isreal Limited Method and device for aligning a charged particle beam column
DE60237952D1 (de) * 2001-10-10 2010-11-25 Applied Materials Israel Ltd Verfahren und Vorrichtung zur Ausrichtung einer Säule für Strahlen geladener Teilchen
JP2004153245A (ja) * 2002-10-07 2004-05-27 Nikon Corp 荷電粒子線露光装置における非点収差ボケの補正感度又は発生感度の決定方法、及び露光方法
JP4275441B2 (ja) * 2003-03-31 2009-06-10 株式会社日立ハイテクノロジーズ 収差補正器付電子線装置

Also Published As

Publication number Publication date
EP1686610A2 (en) 2006-08-02
US7230252B2 (en) 2007-06-12
US20060169927A1 (en) 2006-08-03
EP1686610A3 (en) 2009-01-21
JP2006210503A (ja) 2006-08-10
DE602006020797D1 (de) 2011-05-05
EP1686610B1 (en) 2011-03-23

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