JP4649402B2 - 原子層蒸着による銅フィルムの蒸着のための揮発性銅（ｉ）錯体 - Google Patents

原子層蒸着による銅フィルムの蒸着のための揮発性銅（ｉ）錯体 Download PDF

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Publication number
JP4649402B2
JP4649402B2 JP2006510108A JP2006510108A JP4649402B2 JP 4649402 B2 JP4649402 B2 JP 4649402B2 JP 2006510108 A JP2006510108 A JP 2006510108A JP 2006510108 A JP2006510108 A JP 2006510108A JP 4649402 B2 JP4649402 B2 JP 4649402B2
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JP
Japan
Prior art keywords
copper
group
independently selected
substrate
phenyl
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Expired - Fee Related
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JP2006510108A
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English (en)
Japanese (ja)
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JP2006523778A5 (enExample
JP2006523778A (ja
Inventor
ブラドリー，アレクサンダー・ザク
トンプソン，ジエフリー・スコツト
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EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
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Publication date
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006510108A 2003-04-16 2004-04-16 原子層蒸着による銅フィルムの蒸着のための揮発性銅（ｉ）錯体 Expired - Fee Related JP4649402B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46317003P 2003-04-16 2003-04-16
PCT/US2004/011734 WO2004094689A2 (en) 2003-04-16 2004-04-16 Volatile copper(i) complexes for deposition of copper films by atomic layer deposition

Publications (3)

Publication Number Publication Date
JP2006523778A JP2006523778A (ja) 2006-10-19
JP2006523778A5 JP2006523778A5 (enExample) 2007-05-24
JP4649402B2 true JP4649402B2 (ja) 2011-03-09

Family

ID=33310754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006510108A Expired - Fee Related JP4649402B2 (ja) 2003-04-16 2004-04-16 原子層蒸着による銅フィルムの蒸着のための揮発性銅（ｉ）錯体

Country Status (8)

Country Link
US (2) US20040247905A1 (enExample)
EP (1) EP1613789B1 (enExample)
JP (1) JP4649402B2 (enExample)
KR (1) KR101132444B1 (enExample)
CN (1) CN1774523A (enExample)
DE (1) DE602004018627D1 (enExample)
TW (1) TWI343367B (enExample)
WO (1) WO2004094689A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040077733A (ko) * 2002-01-18 2004-09-06 이 아이 듀폰 디 네모아 앤드 캄파니 원자층 증착에 의한 구리막 증착용 휘발성 구리(ⅱ) 착물
US20050227007A1 (en) * 2004-04-08 2005-10-13 Bradley Alexander Z Volatile copper(I) complexes for deposition of copper films by atomic layer deposition
EP1771594A1 (en) * 2004-07-30 2007-04-11 E.I.Du pont de nemours and company Copper (i) complexes for deposition of copper films by atomic layer deposition
US7205422B2 (en) 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
US7034169B1 (en) 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US7572731B2 (en) * 2005-06-28 2009-08-11 Micron Technology, Inc. Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
US7439338B2 (en) 2005-06-28 2008-10-21 Micron Technology, Inc. Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
US7416994B2 (en) * 2005-06-28 2008-08-26 Micron Technology, Inc. Atomic layer deposition systems and methods including metal beta-diketiminate compounds
US7488435B2 (en) 2006-08-07 2009-02-10 E. I. Du Pont De Nemours And Company Copper(I) complexes and processes for deposition of copper films by atomic layer deposition
WO2008018861A1 (en) * 2006-08-07 2008-02-14 E. I. Du Pont De Nemours And Company Copper(i) complexes and processes for deposition of copper films by atomic layer deposition
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
US20090130466A1 (en) * 2007-11-16 2009-05-21 Air Products And Chemicals, Inc. Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
DE102007058571B4 (de) * 2007-12-05 2012-02-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat mit einer Kupfer enthaltenden Beschichtung und Verfahren zu deren Herstellung mittels Atomic Layer Deposition und Verwendung des Verfahrens
IL279915B2 (en) * 2018-07-12 2025-08-01 Basf Se Process for the generation of metal- or semimetal-containing films

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4202889C2 (de) * 1992-02-01 1994-12-15 Solvay Deutschland Verfahren zur Abscheidung von ein Metall der ersten Übergangsmetallreihe oder Aluminium enthaltenden Schichten und 1,3-Diketiminato-Metall-Verbindungen
US5464666A (en) * 1995-02-06 1995-11-07 Air Products And Chemicals, Inc. Process for chemical vapor codeposition of copper and aluminum alloys
KR100225686B1 (ko) * 1995-03-20 1999-10-15 모리시다 요이치치 막형성용 재료 및 배선형성방법
US6511936B1 (en) * 1998-02-12 2003-01-28 University Of Delaware Catalyst compounds with β-diminate anionic ligands and processes for polymerizing olefins
US6281124B1 (en) * 1998-09-02 2001-08-28 Micron Technology, Inc. Methods and systems for forming metal-containing films on substrates
EP1264817A1 (en) * 2000-03-14 2002-12-11 Nissan Chemical Industries, Ltd. $g(b)-DIKETONATOCOPPER(I) COMPLEX CONTAINING ALLENE COMPOUND AS LIGAND AND PROCESS FOR PRODUCING THE SAME
JP2001328953A (ja) * 2000-03-14 2001-11-27 Nissan Chem Ind Ltd アレン化合物を配位子としたβ−ジケトネート銅（Ｉ）錯体およびその製造法
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
US6464779B1 (en) * 2001-01-19 2002-10-15 Novellus Systems, Inc. Copper atomic layer chemical vapor desposition
WO2003044242A2 (en) * 2001-11-16 2003-05-30 Applied Materials, Inc. Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
KR20040077733A (ko) * 2002-01-18 2004-09-06 이 아이 듀폰 디 네모아 앤드 캄파니 원자층 증착에 의한 구리막 증착용 휘발성 구리(ⅱ) 착물
US20050227007A1 (en) * 2004-04-08 2005-10-13 Bradley Alexander Z Volatile copper(I) complexes for deposition of copper films by atomic layer deposition

Also Published As

Publication number Publication date
EP1613789B1 (en) 2008-12-24
DE602004018627D1 (de) 2009-02-05
US20040247905A1 (en) 2004-12-09
US20060182884A1 (en) 2006-08-17
KR20060010746A (ko) 2006-02-02
KR101132444B1 (ko) 2012-03-30
WO2004094689A2 (en) 2004-11-04
JP2006523778A (ja) 2006-10-19
TWI343367B (en) 2011-06-11
EP1613789A2 (en) 2006-01-11
TW200500327A (en) 2005-01-01
WO2004094689A3 (en) 2005-01-20
CN1774523A (zh) 2006-05-17

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