JP4634076B2 - 荷電粒子線露光装置及びデバイス製造方法 - Google Patents

荷電粒子線露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4634076B2
JP4634076B2 JP2004194771A JP2004194771A JP4634076B2 JP 4634076 B2 JP4634076 B2 JP 4634076B2 JP 2004194771 A JP2004194771 A JP 2004194771A JP 2004194771 A JP2004194771 A JP 2004194771A JP 4634076 B2 JP4634076 B2 JP 4634076B2
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column
pattern
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JP2004194771A
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Japanese (ja)
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JP2006019436A (ja
JP2006019436A5 (https=
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恭宏 染田
明佳 谷本
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Canon Inc
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Canon Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004194771A 2004-06-30 2004-06-30 荷電粒子線露光装置及びデバイス製造方法 Expired - Fee Related JP4634076B2 (ja)

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JP2004194771A JP4634076B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置及びデバイス製造方法

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JP2004194771A JP4634076B2 (ja) 2004-06-30 2004-06-30 荷電粒子線露光装置及びデバイス製造方法

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JP2006019436A JP2006019436A (ja) 2006-01-19
JP2006019436A5 JP2006019436A5 (https=) 2007-08-16
JP4634076B2 true JP4634076B2 (ja) 2011-02-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8772734B2 (en) 2011-12-27 2014-07-08 Canon Kabushiki Kaisha Charged particle beam lithography apparatus and method, and article manufacturing method

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JP5484808B2 (ja) * 2008-09-19 2014-05-07 株式会社ニューフレアテクノロジー 描画装置及び描画方法
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
CN102460631B (zh) * 2009-05-20 2015-03-25 迈普尔平版印刷Ip有限公司 两次扫描
JP5977941B2 (ja) * 2011-12-19 2016-08-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
EP2757571B1 (en) 2013-01-17 2017-09-20 IMS Nanofabrication AG High-voltage insulation device for charged-particle optical apparatus
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EP2830083B1 (en) 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
US20150069260A1 (en) * 2013-09-11 2015-03-12 Ims Nanofabrication Ag Charged-particle multi-beam apparatus having correction plate
EP2913838B1 (en) * 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
US9443699B2 (en) 2014-04-25 2016-09-13 Ims Nanofabrication Ag Multi-beam tool for cutting patterns
EP2950325B1 (en) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using overlapping exposure spots
JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
JP2016115946A (ja) * 2016-02-18 2016-06-23 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
JP7316127B2 (ja) * 2019-07-10 2023-07-27 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3145491B2 (ja) * 1992-01-31 2001-03-12 富士通株式会社 電子ビーム装置
JPH0574404A (ja) * 1991-09-10 1993-03-26 Hitachi Ltd 荷電粒子線露光装置
JPH10106931A (ja) * 1996-10-03 1998-04-24 Hitachi Ltd 電子ビーム露光方法およびそれを用いた半導体集積回路装置の製造方法
JP2000252198A (ja) * 1999-03-02 2000-09-14 Advantest Corp 荷電ビーム露光装置
JP3326419B2 (ja) * 2000-01-28 2002-09-24 株式会社日立製作所 電子ビーム描画方法
JP4647820B2 (ja) * 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8772734B2 (en) 2011-12-27 2014-07-08 Canon Kabushiki Kaisha Charged particle beam lithography apparatus and method, and article manufacturing method

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