JP4613092B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP4613092B2 JP4613092B2 JP2005134206A JP2005134206A JP4613092B2 JP 4613092 B2 JP4613092 B2 JP 4613092B2 JP 2005134206 A JP2005134206 A JP 2005134206A JP 2005134206 A JP2005134206 A JP 2005134206A JP 4613092 B2 JP4613092 B2 JP 4613092B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- sputtering
- film
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005134206A JP4613092B2 (ja) | 2005-05-02 | 2005-05-02 | 成膜装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005134206A JP4613092B2 (ja) | 2005-05-02 | 2005-05-02 | 成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006307305A JP2006307305A (ja) | 2006-11-09 |
| JP2006307305A5 JP2006307305A5 (enExample) | 2008-06-26 |
| JP4613092B2 true JP4613092B2 (ja) | 2011-01-12 |
Family
ID=37474518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005134206A Expired - Lifetime JP4613092B2 (ja) | 2005-05-02 | 2005-05-02 | 成膜装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4613092B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100927621B1 (ko) | 2007-03-22 | 2009-11-20 | 삼성에스디아이 주식회사 | 보호막층을 증착시키는 장치와, 이를 이용한 증착 방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000017457A (ja) * | 1998-07-03 | 2000-01-18 | Shincron:Kk | 薄膜形成装置および薄膜形成方法 |
| JP2004277799A (ja) * | 2003-03-14 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 成膜装置およびそのクリーニング方法 |
| JP4664061B2 (ja) * | 2004-12-22 | 2011-04-06 | 株式会社アルバック | 成膜装置および成膜方法 |
| JP2006176823A (ja) * | 2004-12-22 | 2006-07-06 | Ulvac Japan Ltd | 成膜装置 |
-
2005
- 2005-05-02 JP JP2005134206A patent/JP4613092B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006307305A (ja) | 2006-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4879509B2 (ja) | 真空成膜装置 | |
| TWI506159B (zh) | 成膜裝置 | |
| US10475641B2 (en) | Substrate processing apparatus | |
| JP5195174B2 (ja) | 成膜装置及び成膜方法 | |
| JP4354908B2 (ja) | 処理装置 | |
| US9412582B2 (en) | Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device | |
| CN107974668B (zh) | 基座组件及处理室 | |
| JP4480516B2 (ja) | バリア膜の形成方法 | |
| KR20100027041A (ko) | 성막 장치, 성막 방법 및 기억 매체 | |
| JP2012004409A (ja) | 処理装置及び成膜方法 | |
| KR20040001036A (ko) | 박막 적층 방법 | |
| JP5093078B2 (ja) | 成膜装置 | |
| TWI742098B (zh) | 釕(Ru)配線及該釕配線的製造方法 | |
| JP6457307B2 (ja) | 半導体装置の製造方法、及び半導体製造装置 | |
| JP2022003169A (ja) | 薄膜封止処理システムおよびプロセスキット | |
| JP4613092B2 (ja) | 成膜装置 | |
| WO2004042112A1 (ja) | 金属カルボニルガスを使用するcvd方法 | |
| JP2009130288A (ja) | 薄膜形成方法 | |
| JP4783585B2 (ja) | 成膜装置 | |
| JP2006176823A (ja) | 成膜装置 | |
| JP4734020B2 (ja) | 成膜装置 | |
| JP7489786B2 (ja) | 半導体装置の製造方法 | |
| JP4664061B2 (ja) | 成膜装置および成膜方法 | |
| JP2010212430A (ja) | 原子層成長装置 | |
| JP4637556B2 (ja) | 成膜装置とこの成膜装置を含む複合型配線膜形成装置および薄膜製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080425 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080425 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100928 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101005 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101018 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131022 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4613092 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |